WO2005065144A3 - Planarization method of manufacturing a superjunction device - Google Patents
Planarization method of manufacturing a superjunction device Download PDFInfo
- Publication number
- WO2005065144A3 WO2005065144A3 PCT/US2004/041375 US2004041375W WO2005065144A3 WO 2005065144 A3 WO2005065144 A3 WO 2005065144A3 US 2004041375 W US2004041375 W US 2004041375W WO 2005065144 A3 WO2005065144 A3 WO 2005065144A3
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- WIPO (PCT)
- Prior art keywords
- mesa
- conductivity
- substrate
- oxide layer
- manufacturing
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002019 doping agent Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006545758A JP4417962B2 (en) | 2003-12-19 | 2004-12-10 | Planarization method in the manufacture of superjunction devices |
EP04813671A EP1706899A4 (en) | 2003-12-19 | 2004-12-10 | Planarization method of manufacturing a superjunction device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53146703P | 2003-12-19 | 2003-12-19 | |
US60/531,467 | 2003-12-19 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2005065144A2 WO2005065144A2 (en) | 2005-07-21 |
WO2005065144A3 true WO2005065144A3 (en) | 2006-03-02 |
WO2005065144B1 WO2005065144B1 (en) | 2006-04-20 |
Family
ID=34748767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/041375 WO2005065144A2 (en) | 2003-12-19 | 2004-12-10 | Planarization method of manufacturing a superjunction device |
Country Status (6)
Country | Link |
---|---|
US (1) | US7199006B2 (en) |
EP (1) | EP1706899A4 (en) |
JP (1) | JP4417962B2 (en) |
KR (1) | KR100879588B1 (en) |
TW (1) | TWI353621B (en) |
WO (1) | WO2005065144A2 (en) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20080100265A (en) * | 2003-12-19 | 2008-11-14 | 써드 디멘존 세미컨덕터, 인코포레이티드 | Method of manufacturing a superjunction device with conventional terminations |
US7023069B2 (en) * | 2003-12-19 | 2006-04-04 | Third Dimension (3D) Semiconductor, Inc. | Method for forming thick dielectric regions using etched trenches |
JP4417962B2 (en) * | 2003-12-19 | 2010-02-17 | サード ディメンジョン (スリーディ) セミコンダクタ インコーポレイテッド | Planarization method in the manufacture of superjunction devices |
TWI401749B (en) | 2004-12-27 | 2013-07-11 | Third Dimension 3D Sc Inc | Process for high voltage superjunction termination |
US7439583B2 (en) * | 2004-12-27 | 2008-10-21 | Third Dimension (3D) Semiconductor, Inc. | Tungsten plug drain extension |
EP1710843B1 (en) * | 2005-04-04 | 2012-09-19 | STMicroelectronics Srl | Integrated power device |
KR20080028858A (en) * | 2005-04-22 | 2008-04-02 | 아이스모스 테크날러지 코포레이션 | Superjunction device having oxide lined trenches and method for manufacturing a superjunction device having oxide lined trenches |
US7446018B2 (en) | 2005-08-22 | 2008-11-04 | Icemos Technology Corporation | Bonded-wafer superjunction semiconductor device |
US7429772B2 (en) | 2006-04-27 | 2008-09-30 | Icemos Technology Corporation | Technique for stable processing of thin/fragile substrates |
US7723172B2 (en) | 2007-04-23 | 2010-05-25 | Icemos Technology Ltd. | Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material |
US8580651B2 (en) * | 2007-04-23 | 2013-11-12 | Icemos Technology Ltd. | Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material |
US20090085148A1 (en) * | 2007-09-28 | 2009-04-02 | Icemos Technology Corporation | Multi-directional trenching of a plurality of dies in manufacturing superjunction devices |
US8159039B2 (en) | 2008-01-11 | 2012-04-17 | Icemos Technology Ltd. | Superjunction device having a dielectric termination and methods for manufacturing the device |
US7846821B2 (en) | 2008-02-13 | 2010-12-07 | Icemos Technology Ltd. | Multi-angle rotation for ion implantation of trenches in superjunction devices |
US7795045B2 (en) * | 2008-02-13 | 2010-09-14 | Icemos Technology Ltd. | Trench depth monitor for semiconductor manufacturing |
US8030133B2 (en) | 2008-03-28 | 2011-10-04 | Icemos Technology Ltd. | Method of fabricating a bonded wafer substrate for use in MEMS structures |
US7807576B2 (en) * | 2008-06-20 | 2010-10-05 | Fairchild Semiconductor Corporation | Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices |
US20110198689A1 (en) * | 2010-02-17 | 2011-08-18 | Suku Kim | Semiconductor devices containing trench mosfets with superjunctions |
US9490372B2 (en) * | 2011-01-21 | 2016-11-08 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device termination and structure therefor |
US8598654B2 (en) | 2011-03-16 | 2013-12-03 | Fairchild Semiconductor Corporation | MOSFET device with thick trench bottom oxide |
JP2013175655A (en) * | 2012-02-27 | 2013-09-05 | Toshiba Corp | Power semiconductor device and method of manufacturing the same |
US8946814B2 (en) | 2012-04-05 | 2015-02-03 | Icemos Technology Ltd. | Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates |
US9576842B2 (en) | 2012-12-10 | 2017-02-21 | Icemos Technology, Ltd. | Grass removal in patterned cavity etching |
US9391135B1 (en) | 2015-03-23 | 2016-07-12 | Semiconductor Components Industries, Llc | Semiconductor device |
CN106158955A (en) | 2015-03-30 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | Power semiconductor and forming method thereof |
US10115790B2 (en) | 2015-09-17 | 2018-10-30 | Semiconductor Components Industries, Llc | Electronic device including an insulating structure |
US10497602B2 (en) | 2016-08-01 | 2019-12-03 | Semiconductor Components Industries, Llc | Process of forming an electronic device including forming an electronic component and removing a portion of a substrate |
FR3061357B1 (en) * | 2016-12-27 | 2019-05-24 | Aledia | METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE COMPRISING AN ENGRAVING STEP ON THE REAR SIDE OF THE GROWTH SUBSTRATE |
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- 2004-12-10 WO PCT/US2004/041375 patent/WO2005065144A2/en active Application Filing
- 2004-12-10 EP EP04813671A patent/EP1706899A4/en not_active Withdrawn
- 2004-12-10 US US11/009,616 patent/US7199006B2/en not_active Expired - Fee Related
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TW200535913A (en) | 2005-11-01 |
EP1706899A2 (en) | 2006-10-04 |
EP1706899A4 (en) | 2008-11-26 |
WO2005065144A2 (en) | 2005-07-21 |
JP2007515080A (en) | 2007-06-07 |
KR100879588B1 (en) | 2009-01-21 |
KR20070029656A (en) | 2007-03-14 |
US20050176192A1 (en) | 2005-08-11 |
US7199006B2 (en) | 2007-04-03 |
TWI353621B (en) | 2011-12-01 |
JP4417962B2 (en) | 2010-02-17 |
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