WO2005076281A8 - Nonvolatile memory - Google Patents

Nonvolatile memory

Info

Publication number
WO2005076281A8
WO2005076281A8 PCT/JP2005/002108 JP2005002108W WO2005076281A8 WO 2005076281 A8 WO2005076281 A8 WO 2005076281A8 JP 2005002108 W JP2005002108 W JP 2005002108W WO 2005076281 A8 WO2005076281 A8 WO 2005076281A8
Authority
WO
WIPO (PCT)
Prior art keywords
memory
state
nonvolatile memory
transit
states
Prior art date
Application number
PCT/JP2005/002108
Other languages
French (fr)
Other versions
WO2005076281A1 (en
Inventor
Kiyoshi Kato
Original Assignee
Semiconductor Energy Lab
Kiyoshi Kato
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab, Kiyoshi Kato filed Critical Semiconductor Energy Lab
Priority to KR1020127002364A priority Critical patent/KR101264761B1/en
Priority to KR1020067018186A priority patent/KR101157409B1/en
Priority to US10/588,064 priority patent/US7663915B2/en
Priority to EP05710153.7A priority patent/EP1714294B1/en
Publication of WO2005076281A1 publication Critical patent/WO2005076281A1/en
Publication of WO2005076281A8 publication Critical patent/WO2005076281A8/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/702—Masking faults in memories by using spares or by reconfiguring by replacing auxiliary circuits, e.g. spare voltage generators, decoders or sense amplifiers, to be used instead of defective ones

Abstract

A memory cell for storing 1-bit data is formed by using at least two memory elements in the OTP type nonvolatile memory using a memory element that have two states and can transit only in one direction. In the OTP type nonvolatile memory using a memory element that has two states of an H state (a first state) and an L ( a second state) state (hereinafter simply referred to as H and L) and can electrically transit only in one direction from L to H, a memory cell for storing 1-bit data is formed by using two or more memory elements.
PCT/JP2005/002108 2004-02-10 2005-02-04 Nonvolatile memory WO2005076281A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020127002364A KR101264761B1 (en) 2004-02-10 2005-02-04 Nonvolatile memory and IC card, ID card and ID tag incorporated with the same
KR1020067018186A KR101157409B1 (en) 2004-02-10 2005-02-04 Nonvolatile memory and IC card, ID card and ID tag incorporated with the same
US10/588,064 US7663915B2 (en) 2004-02-10 2005-02-04 Nonvolatile memory
EP05710153.7A EP1714294B1 (en) 2004-02-10 2005-02-04 Nonvolatile memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004033075 2004-02-10
JP2004-033075 2004-02-10
JP2004-033081 2004-02-10
JP2004033081 2004-02-10

Publications (2)

Publication Number Publication Date
WO2005076281A1 WO2005076281A1 (en) 2005-08-18
WO2005076281A8 true WO2005076281A8 (en) 2006-10-19

Family

ID=34840175

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/002108 WO2005076281A1 (en) 2004-02-10 2005-02-04 Nonvolatile memory

Country Status (6)

Country Link
US (1) US7663915B2 (en)
EP (1) EP1714294B1 (en)
JP (1) JP4860160B2 (en)
KR (2) KR101264761B1 (en)
CN (1) CN100485816C (en)
WO (1) WO2005076281A1 (en)

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Also Published As

Publication number Publication date
KR101264761B1 (en) 2013-05-15
US20080144374A1 (en) 2008-06-19
EP1714294A4 (en) 2007-10-03
KR20120030572A (en) 2012-03-28
JP4860160B2 (en) 2012-01-25
CN1918663A (en) 2007-02-21
KR20070022654A (en) 2007-02-27
EP1714294A1 (en) 2006-10-25
CN100485816C (en) 2009-05-06
US7663915B2 (en) 2010-02-16
EP1714294B1 (en) 2016-04-20
JP2005259334A (en) 2005-09-22
WO2005076281A1 (en) 2005-08-18
KR101157409B1 (en) 2012-06-21

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