WO2005077025A3 - Secured phase-change devices - Google Patents
Secured phase-change devices Download PDFInfo
- Publication number
- WO2005077025A3 WO2005077025A3 PCT/US2005/003925 US2005003925W WO2005077025A3 WO 2005077025 A3 WO2005077025 A3 WO 2005077025A3 US 2005003925 W US2005003925 W US 2005003925W WO 2005077025 A3 WO2005077025 A3 WO 2005077025A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase
- change
- resistance
- change element
- state
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0059—Security or protection circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05713091A EP1714288A4 (en) | 2004-02-10 | 2005-02-08 | Secured phase-change devices |
CA002553130A CA2553130A1 (en) | 2004-02-10 | 2005-02-08 | Secured phase-change devices |
JP2006553183A JP2007522676A (en) | 2004-02-10 | 2005-02-08 | Secure phase change device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/775,431 US7085155B2 (en) | 2003-03-10 | 2004-02-10 | Secured phase-change devices |
US10/775,431 | 2004-02-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005077025A2 WO2005077025A2 (en) | 2005-08-25 |
WO2005077025A3 true WO2005077025A3 (en) | 2006-03-23 |
Family
ID=34860834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/003925 WO2005077025A2 (en) | 2004-02-10 | 2005-02-08 | Secured phase-change devices |
Country Status (8)
Country | Link |
---|---|
US (1) | US7085155B2 (en) |
EP (1) | EP1714288A4 (en) |
JP (1) | JP2007522676A (en) |
KR (1) | KR20070003857A (en) |
CN (1) | CN1918661A (en) |
CA (1) | CA2553130A1 (en) |
TW (1) | TW200605070A (en) |
WO (1) | WO2005077025A2 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7646630B2 (en) * | 2004-11-08 | 2010-01-12 | Ovonyx, Inc. | Programmable matrix array with chalcogenide material |
US8183551B2 (en) * | 2005-11-03 | 2012-05-22 | Agale Logic, Inc. | Multi-terminal phase change devices |
US8222917B2 (en) * | 2005-11-03 | 2012-07-17 | Agate Logic, Inc. | Impedance matching and trimming apparatuses and methods using programmable resistance devices |
US7511532B2 (en) * | 2005-11-03 | 2009-03-31 | Cswitch Corp. | Reconfigurable logic structures |
JP4621897B2 (en) | 2007-08-31 | 2011-01-26 | 独立行政法人産業技術総合研究所 | Solid memory |
JP4595125B2 (en) | 2007-08-31 | 2010-12-08 | 独立行政法人産業技術総合研究所 | Solid memory |
US7709401B2 (en) * | 2008-02-22 | 2010-05-04 | International Business Machines Corporation | Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature |
US7916526B2 (en) * | 2008-12-30 | 2011-03-29 | Stmicroelectronics S.R.L. | Protection register for a phase-change memory |
EP2249352A1 (en) * | 2009-05-05 | 2010-11-10 | Nxp B.V. | Phase change memory |
US8447714B2 (en) * | 2009-05-21 | 2013-05-21 | International Business Machines Corporation | System for electronic learning synapse with spike-timing dependent plasticity using phase change memory |
US8250010B2 (en) | 2009-05-21 | 2012-08-21 | International Business Machines Corporation | Electronic learning synapse with spike-timing dependent plasticity using unipolar memory-switching elements |
JP5178637B2 (en) * | 2009-06-18 | 2013-04-10 | 株式会社東芝 | Nonvolatile semiconductor memory device |
US7965538B2 (en) * | 2009-07-13 | 2011-06-21 | Seagate Technology Llc | Active protection device for resistive random access memory (RRAM) formation |
US8012790B2 (en) * | 2009-08-28 | 2011-09-06 | International Business Machines Corporation | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell |
US8283202B2 (en) | 2009-08-28 | 2012-10-09 | International Business Machines Corporation | Single mask adder phase change memory element |
US8283650B2 (en) | 2009-08-28 | 2012-10-09 | International Business Machines Corporation | Flat lower bottom electrode for phase change memory cell |
US8233317B2 (en) * | 2009-11-16 | 2012-07-31 | International Business Machines Corporation | Phase change memory device suitable for high temperature operation |
US8129268B2 (en) | 2009-11-16 | 2012-03-06 | International Business Machines Corporation | Self-aligned lower bottom electrode |
US7943420B1 (en) * | 2009-11-25 | 2011-05-17 | International Business Machines Corporation | Single mask adder phase change memory element |
FR2977077B1 (en) * | 2011-06-27 | 2013-08-02 | Commissariat Energie Atomique | DELAY GENERATOR USING PROGRAMMABLE RESISTANCE BASED ON PHASE CHANGE MATERIAL |
KR20160039195A (en) * | 2013-07-31 | 2016-04-08 | 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 | Voltage control for crosspoint memory structures |
US9543014B2 (en) | 2015-04-14 | 2017-01-10 | Bertrand F. Cambou | Memory circuits using a blocking state |
KR101678619B1 (en) * | 2015-04-27 | 2016-11-22 | 한국과학기술원 | Hardware based security apparatus and securiy method using the same |
EP3295331A4 (en) | 2015-05-11 | 2019-04-17 | Cambou, Bertrand, F. | Memory circuit using dynamic random access memory arrays |
US9588908B2 (en) | 2015-06-02 | 2017-03-07 | Bertrand F. Cambou | Memory circuit using resistive random access memory arrays in a secure element |
CN108110026B (en) * | 2017-12-20 | 2020-10-20 | 中国科学院上海微系统与信息技术研究所 | Ge-Te-Al-As threshold switch material, threshold switch device unit and preparation method thereof |
Citations (9)
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US3876985A (en) * | 1971-04-30 | 1975-04-08 | Energy Conversion Devices Inc | Matrix of amorphous electronic control device |
US5388096A (en) * | 1992-06-24 | 1995-02-07 | Telefonaktiebolaget L M Ericsson | Distributed circuit switch having switch memory and control memory |
US5523970A (en) * | 1993-12-29 | 1996-06-04 | International Business Machines Incorporated | Non-volatile memory utilizing a thin film, floating gate, amorphous transistor |
US5825046A (en) * | 1996-10-28 | 1998-10-20 | Energy Conversion Devices, Inc. | Composite memory material comprising a mixture of phase-change memory material and dielectric material |
US6545903B1 (en) * | 2001-12-17 | 2003-04-08 | Texas Instruments Incorporated | Self-aligned resistive plugs for forming memory cell with phase change material |
US6570784B2 (en) * | 2001-06-29 | 2003-05-27 | Ovonyx, Inc. | Programming a phase-change material memory |
US20040170053A1 (en) * | 2003-02-28 | 2004-09-02 | Keun-Ho Lee | Phase change memory array |
US6813177B2 (en) * | 2002-12-13 | 2004-11-02 | Ovoynx, Inc. | Method and system to store information |
US6820203B1 (en) * | 1999-04-07 | 2004-11-16 | Sony Corporation | Security unit for use in memory card |
Family Cites Families (27)
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US5596522A (en) * | 1991-01-18 | 1997-01-21 | Energy Conversion Devices, Inc. | Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
US5536947A (en) * | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
US5296716A (en) * | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5534711A (en) * | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5414271A (en) * | 1991-01-18 | 1995-05-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having improved set resistance stability |
US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
JPH05129561A (en) * | 1991-10-31 | 1993-05-25 | Nippon Steel Corp | Semiconductor memory device |
US5694146A (en) * | 1994-10-14 | 1997-12-02 | Energy Conversion Devices, Inc. | Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels |
US5757446A (en) * | 1994-10-14 | 1998-05-26 | Energy Conversion Devices, Inc. | Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels |
US5543737A (en) * | 1995-02-10 | 1996-08-06 | Energy Conversion Devices, Inc. | Logical operation circuit employing two-terminal chalcogenide switches |
US5714768A (en) * | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US6087674A (en) * | 1996-10-28 | 2000-07-11 | Energy Conversion Devices, Inc. | Memory element with memory material comprising phase-change material and dielectric material |
DE19731406C2 (en) * | 1997-07-22 | 2001-12-06 | Philips Corp Intellectual Pty | Programmable locking circuit |
US6141241A (en) * | 1998-06-23 | 2000-10-31 | Energy Conversion Devices, Inc. | Universal memory element with systems employing same and apparatus and method for reading, writing and programming same |
US5912839A (en) * | 1998-06-23 | 1999-06-15 | Energy Conversion Devices, Inc. | Universal memory element and method of programming same |
EP1326254B1 (en) * | 2001-12-27 | 2009-02-25 | STMicroelectronics S.r.l. | Architecture of a phase-change nonvolatile memory array |
US6671710B2 (en) * | 2002-05-10 | 2003-12-30 | Energy Conversion Devices, Inc. | Methods of computing with digital multistate phase change materials |
US6999953B2 (en) * | 2002-07-03 | 2006-02-14 | Energy Conversion Devices, Inc. | Analog neurons and neurosynaptic networks |
US6791867B2 (en) * | 2002-11-18 | 2004-09-14 | Hewlett-Packard Development Company, L.P. | Selection of memory cells in data storage devices |
KR100479810B1 (en) * | 2002-12-30 | 2005-03-31 | 주식회사 하이닉스반도체 | Non-volatile memory device |
US7186998B2 (en) * | 2003-03-10 | 2007-03-06 | Energy Conversion Devices, Inc. | Multi-terminal device having logic functional |
US6967344B2 (en) * | 2003-03-10 | 2005-11-22 | Energy Conversion Devices, Inc. | Multi-terminal chalcogenide switching devices |
US6969867B2 (en) * | 2003-03-10 | 2005-11-29 | Energy Conversion Devices, Inc. | Field effect chalcogenide devices |
US7227170B2 (en) * | 2003-03-10 | 2007-06-05 | Energy Conversion Devices, Inc. | Multiple bit chalcogenide storage device |
KR100647218B1 (en) * | 2004-06-04 | 2006-11-23 | 비욘드마이크로 주식회사 | High density memory cell array and semiconductor devices comprising the same |
JP2006031795A (en) * | 2004-07-14 | 2006-02-02 | Renesas Technology Corp | Nonvolatile semiconductor memory |
US7646630B2 (en) * | 2004-11-08 | 2010-01-12 | Ovonyx, Inc. | Programmable matrix array with chalcogenide material |
-
2004
- 2004-02-10 US US10/775,431 patent/US7085155B2/en not_active Expired - Lifetime
-
2005
- 2005-02-08 EP EP05713091A patent/EP1714288A4/en not_active Withdrawn
- 2005-02-08 WO PCT/US2005/003925 patent/WO2005077025A2/en active Search and Examination
- 2005-02-08 CA CA002553130A patent/CA2553130A1/en not_active Abandoned
- 2005-02-08 CN CNA2005800042107A patent/CN1918661A/en active Pending
- 2005-02-08 JP JP2006553183A patent/JP2007522676A/en active Pending
- 2005-02-08 KR KR1020067016160A patent/KR20070003857A/en not_active Application Discontinuation
- 2005-02-14 TW TW094104260A patent/TW200605070A/en unknown
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3876985A (en) * | 1971-04-30 | 1975-04-08 | Energy Conversion Devices Inc | Matrix of amorphous electronic control device |
US5388096A (en) * | 1992-06-24 | 1995-02-07 | Telefonaktiebolaget L M Ericsson | Distributed circuit switch having switch memory and control memory |
US5523970A (en) * | 1993-12-29 | 1996-06-04 | International Business Machines Incorporated | Non-volatile memory utilizing a thin film, floating gate, amorphous transistor |
US5825046A (en) * | 1996-10-28 | 1998-10-20 | Energy Conversion Devices, Inc. | Composite memory material comprising a mixture of phase-change memory material and dielectric material |
US6820203B1 (en) * | 1999-04-07 | 2004-11-16 | Sony Corporation | Security unit for use in memory card |
US6570784B2 (en) * | 2001-06-29 | 2003-05-27 | Ovonyx, Inc. | Programming a phase-change material memory |
US6545903B1 (en) * | 2001-12-17 | 2003-04-08 | Texas Instruments Incorporated | Self-aligned resistive plugs for forming memory cell with phase change material |
US6813177B2 (en) * | 2002-12-13 | 2004-11-02 | Ovoynx, Inc. | Method and system to store information |
US20040170053A1 (en) * | 2003-02-28 | 2004-09-02 | Keun-Ho Lee | Phase change memory array |
Also Published As
Publication number | Publication date |
---|---|
CA2553130A1 (en) | 2005-08-25 |
CN1918661A (en) | 2007-02-21 |
EP1714288A4 (en) | 2007-08-08 |
US20040179394A1 (en) | 2004-09-16 |
EP1714288A2 (en) | 2006-10-25 |
TW200605070A (en) | 2006-02-01 |
US7085155B2 (en) | 2006-08-01 |
KR20070003857A (en) | 2007-01-05 |
WO2005077025A2 (en) | 2005-08-25 |
JP2007522676A (en) | 2007-08-09 |
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