WO2005081313A3 - A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same - Google Patents

A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same Download PDF

Info

Publication number
WO2005081313A3
WO2005081313A3 PCT/US2005/003440 US2005003440W WO2005081313A3 WO 2005081313 A3 WO2005081313 A3 WO 2005081313A3 US 2005003440 W US2005003440 W US 2005003440W WO 2005081313 A3 WO2005081313 A3 WO 2005081313A3
Authority
WO
WIPO (PCT)
Prior art keywords
die
thermoelectric elements
microelectronic assembly
cool
making
Prior art date
Application number
PCT/US2005/003440
Other languages
French (fr)
Other versions
WO2005081313A2 (en
Inventor
Shriram Ramanathan
Gregory Chrysler
Steven Towle
Original Assignee
Intel Corp
Shriram Ramanathan
Gregory Chrysler
Steven Towle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp, Shriram Ramanathan, Gregory Chrysler, Steven Towle filed Critical Intel Corp
Priority to CN2005800039104A priority Critical patent/CN1914725B/en
Priority to JP2006553163A priority patent/JP4464974B2/en
Publication of WO2005081313A2 publication Critical patent/WO2005081313A2/en
Publication of WO2005081313A3 publication Critical patent/WO2005081313A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38Cooling arrangements using the Peltier effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4882Assembly of heatsink parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/0502Disposition
    • H01L2224/05022Disposition the internal layer being at least partially embedded in the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05075Plural internal layers
    • H01L2224/0508Plural internal layers being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05567Disposition the external layer being at least partially embedded in the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73257Bump and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor

Abstract

A microelectronic assembly is provided, having thermoelectric elements formed on a die so as to pump heat away from the die when current flows through the thermoelectric elements. In one embodiment, the thermoelectric elements are integrated between conductive interconnection elements on an active side of the die. In another embodiment, the thermoelectric elements are on a backside of the die and electrically connected to a carrier substrate on a front side of the die. In a further embodiment, the thermoelectric elements are formed on a secondary substrate and transferred to the die.
PCT/US2005/003440 2004-02-12 2005-02-02 A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same WO2005081313A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2005800039104A CN1914725B (en) 2004-02-12 2005-02-02 Microelectronic assembly having thermoelectric elements to cool a die and a method of making the same
JP2006553163A JP4464974B2 (en) 2004-02-12 2005-02-02 Microelectronic assembly having a thermoelectric element for cooling a die and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/778,514 US7589417B2 (en) 2004-02-12 2004-02-12 Microelectronic assembly having thermoelectric elements to cool a die and a method of making the same
US10/778,514 2004-02-12

Publications (2)

Publication Number Publication Date
WO2005081313A2 WO2005081313A2 (en) 2005-09-01
WO2005081313A3 true WO2005081313A3 (en) 2005-11-24

Family

ID=34838194

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/003440 WO2005081313A2 (en) 2004-02-12 2005-02-02 A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same

Country Status (5)

Country Link
US (1) US7589417B2 (en)
JP (1) JP4464974B2 (en)
CN (1) CN1914725B (en)
TW (1) TWI324818B (en)
WO (1) WO2005081313A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100257871A1 (en) * 2003-12-11 2010-10-14 Rama Venkatasubramanian Thin film thermoelectric devices for power conversion and cooling
US7638705B2 (en) * 2003-12-11 2009-12-29 Nextreme Thermal Solutions, Inc. Thermoelectric generators for solar conversion and related systems and methods
US7523617B2 (en) * 2004-10-22 2009-04-28 Nextreme Thermal Solutions, Inc. Thin film thermoelectric devices for hot-spot thermal management in microprocessors and other electronics
US8063298B2 (en) * 2004-10-22 2011-11-22 Nextreme Thermal Solutions, Inc. Methods of forming embedded thermoelectric coolers with adjacent thermally conductive fields
US20060243315A1 (en) * 2005-04-29 2006-11-02 Chrysler Gregory M Gap-filling in electronic assemblies including a TEC structure
SG139573A1 (en) * 2006-07-17 2008-02-29 Micron Technology Inc Microelectronic packages with leadframes, including leadframes configured for stacked die packages, and associated systems and methods
JP5522943B2 (en) * 2008-01-29 2014-06-18 京セラ株式会社 Thermoelectric module
TWI405361B (en) * 2008-12-31 2013-08-11 Ind Tech Res Inst Thermoelectric device and process thereof and stacked structure of chips and chip package structure
US8035218B2 (en) * 2009-11-03 2011-10-11 Intel Corporation Microelectronic package and method of manufacturing same
US20110132000A1 (en) * 2009-12-09 2011-06-09 Deane Philip A Thermoelectric Heating/Cooling Structures Including a Plurality of Spaced Apart Thermoelectric Components
CN102194811B (en) * 2010-03-05 2012-12-05 中芯国际集成电路制造(上海)有限公司 Thermoelectric device
FR2963165A1 (en) * 2010-07-22 2012-01-27 St Microelectronics Crolles 2 METHOD FOR GENERATING ELECTRIC ENERGY IN A SEMICONDUCTOR DEVICE, AND CORRESPONDING DEVICE
US8492788B2 (en) * 2010-10-08 2013-07-23 Guardian Industries Corp. Insulating glass (IG) or vacuum insulating glass (VIG) unit including light source, and/or methods of making the same
FR2966268B1 (en) 2010-10-18 2013-08-16 St Microelectronics Rousset METHOD COMPRISING DETECTION OF INTEGRATED CIRCUIT BOX RETRIEVAL AFTER INITIAL SET-UP, AND CORRESPONDING INTEGRATED CIRCUIT.
US8816494B2 (en) 2012-07-12 2014-08-26 Micron Technology, Inc. Semiconductor device packages including thermally insulating materials and methods of making and using such semiconductor packages
CN102800636B (en) * 2012-08-28 2015-02-18 中国科学院微电子研究所 Electronic component package and manufacturing method thereof
DE102012110021A1 (en) * 2012-10-19 2014-04-24 Bpe E.K. Multifunction microelectronic device and manufacturing method therefor
WO2014159572A1 (en) * 2013-03-14 2014-10-02 Gmz Energy Inc. Thermoelectric device fabrication using direct bonding
US9559283B2 (en) 2015-03-30 2017-01-31 International Business Machines Corporation Integrated circuit cooling using embedded peltier micro-vias in substrate
US9941458B2 (en) * 2015-03-30 2018-04-10 International Business Machines Corporation Integrated circuit cooling using embedded peltier micro-vias in substrate
US10068875B2 (en) 2015-10-22 2018-09-04 Micron Technology, Inc. Apparatuses and methods for heat transfer from packaged semiconductor die
US11152279B2 (en) * 2018-03-26 2021-10-19 Raytheon Company Monolithic microwave integrated circuit (MMIC) cooling structure
US20230268244A1 (en) * 2022-02-21 2023-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal dissipation in power ic using pyroelectric materials

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020024154A1 (en) * 2000-07-03 2002-02-28 Reiko Hara Thermoelectric module
US6424533B1 (en) * 2000-06-29 2002-07-23 International Business Machines Corporation Thermoelectric-enhanced heat spreader for heat generating component of an electronic device
US20020113289A1 (en) * 2000-02-04 2002-08-22 Cordes Michael James Method and apparatus for thermal management of integrated circuits
US20030122245A1 (en) * 2000-11-30 2003-07-03 International Business Machines Corporation Electronic module with integrated programmable thermoelectric cooling assembly and method of fabrication

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4483341A (en) * 1982-12-09 1984-11-20 Atlantic Richfield Company Therapeutic hypothermia instrument
US5284287A (en) * 1992-08-31 1994-02-08 Motorola, Inc. Method for attaching conductive balls to a substrate
US5291062A (en) * 1993-03-01 1994-03-01 Motorola, Inc. Area array semiconductor device having a lid with functional contacts
US5435482A (en) * 1994-02-04 1995-07-25 Lsi Logic Corporation Integrated circuit having a coplanar solder ball contact array
US5543661A (en) * 1994-05-31 1996-08-06 Sumitomo Metal Ceramics Inc. Semiconductor ceramic package with terminal vias
JP2937791B2 (en) * 1995-03-14 1999-08-23 日本電気株式会社 Peltier Eclair
US5712448A (en) * 1996-02-07 1998-01-27 California Institute Of Technology Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices
JPH10200208A (en) * 1997-01-09 1998-07-31 Nec Corp Semiconductor laser module
US5821168A (en) * 1997-07-16 1998-10-13 Motorola, Inc. Process for forming a semiconductor device
SE515158C2 (en) 1999-02-10 2001-06-18 Ericsson Telefon Ab L M Semiconductor device with ground connection via a non-through plug
US6230497B1 (en) 1999-12-06 2001-05-15 Motorola, Inc. Semiconductor circuit temperature monitoring and controlling apparatus and method
US6455930B1 (en) * 1999-12-13 2002-09-24 Lamina Ceramics, Inc. Integrated heat sinking packages using low temperature co-fired ceramic metal circuit board technology
US6528907B2 (en) * 2000-04-07 2003-03-04 Mirae Corporation Linear motor
US6512291B2 (en) * 2001-02-23 2003-01-28 Agere Systems Inc. Flexible semiconductor device support with integrated thermoelectric cooler and method for making same
US6634770B2 (en) * 2001-08-24 2003-10-21 Densen Cao Light source using semiconductor devices mounted on a heat sink
DE10238843B8 (en) * 2002-08-20 2008-01-03 Infineon Technologies Ag Semiconductor component
US7034394B2 (en) * 2003-10-08 2006-04-25 Intel Corporation Microelectronic assembly having thermoelectric elements to cool a die and a method of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020113289A1 (en) * 2000-02-04 2002-08-22 Cordes Michael James Method and apparatus for thermal management of integrated circuits
US6424533B1 (en) * 2000-06-29 2002-07-23 International Business Machines Corporation Thermoelectric-enhanced heat spreader for heat generating component of an electronic device
US20020024154A1 (en) * 2000-07-03 2002-02-28 Reiko Hara Thermoelectric module
US20030122245A1 (en) * 2000-11-30 2003-07-03 International Business Machines Corporation Electronic module with integrated programmable thermoelectric cooling assembly and method of fabrication

Also Published As

Publication number Publication date
TW200529398A (en) 2005-09-01
US20050178423A1 (en) 2005-08-18
JP2007523478A (en) 2007-08-16
WO2005081313A2 (en) 2005-09-01
JP4464974B2 (en) 2010-05-19
CN1914725A (en) 2007-02-14
TWI324818B (en) 2010-05-11
US7589417B2 (en) 2009-09-15
CN1914725B (en) 2011-11-23

Similar Documents

Publication Publication Date Title
WO2005081313A3 (en) A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same
WO2005036642A3 (en) A microelectronic assembly having thermoelectric elements to cool a die and a method of making the same
WO2007027417A3 (en) Microfeature assemblies including interconnect structures and methods for forming such interconnect structures
WO2007000697A3 (en) Method of manufacturing an assembly and assembly
WO2003063248A8 (en) Semiconductor die package with semiconductor die having side electrical connection
WO2007089723A3 (en) Thermal enhanced package
WO2008005614A3 (en) Chip module for complete power train
TW200725825A (en) Embedded semiconductor chip structure and method for fabricating the same
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
WO2012006063A3 (en) Microelectronic package and method of manufacturing same
WO2009025961A3 (en) Semiconductor component and method of manufacture
TW200746357A (en) Semiconductor device manufacturing method and semiconductor device
TW200701854A (en) Communication circuit module
TW200627563A (en) Bump-less chip package
WO2005038910A3 (en) Three-dimensional integrated circuit with integrated heat sinks
WO2007016492A3 (en) Architecture for high temperature superconductor wire
WO2007004137A3 (en) Electronic device
WO2004042851A3 (en) Structured silicon anode
HK1093381A1 (en) Method and apparatus for a dual substrate package
WO2006036358A3 (en) Power led package
EP1701380A3 (en) Semiconductor power module
WO2007041155A3 (en) Microelectronic package having multiple conductive paths through an opening in a support substrate
WO2006084028A3 (en) Interdiffusion bonded stacked die device
TW200746330A (en) Microelectronic assembly with back side metallization and method for forming the same
EP1458024A3 (en) Interposer and semiconductor device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 200580003910.4

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2006553163

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase