WO2005081788A3 - High throughput surface treatment on coiled flexible substrates - Google Patents
High throughput surface treatment on coiled flexible substrates Download PDFInfo
- Publication number
- WO2005081788A3 WO2005081788A3 PCT/US2005/003691 US2005003691W WO2005081788A3 WO 2005081788 A3 WO2005081788 A3 WO 2005081788A3 US 2005003691 W US2005003691 W US 2005003691W WO 2005081788 A3 WO2005081788 A3 WO 2005081788A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coiled
- surface treatment
- high throughput
- flexible substrates
- substrates
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000004381 surface treatment Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05712939A EP1723265A4 (en) | 2004-02-19 | 2005-02-07 | High throughput surface treatment on coiled flexible substrates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/782,545 US7115304B2 (en) | 2004-02-19 | 2004-02-19 | High throughput surface treatment on coiled flexible substrates |
US10/782,545 | 2004-02-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005081788A2 WO2005081788A2 (en) | 2005-09-09 |
WO2005081788A3 true WO2005081788A3 (en) | 2006-05-04 |
Family
ID=34861045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/003691 WO2005081788A2 (en) | 2004-02-19 | 2005-02-07 | High throughput surface treatment on coiled flexible substrates |
Country Status (3)
Country | Link |
---|---|
US (6) | US7115304B2 (en) |
EP (1) | EP1723265A4 (en) |
WO (1) | WO2005081788A2 (en) |
Families Citing this family (150)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1629543B1 (en) * | 2003-05-16 | 2013-08-07 | E.I. Du Pont De Nemours And Company | Barrier films for flexible polymer substrates fabricated by atomic layer deposition |
US7641937B2 (en) * | 2003-07-26 | 2010-01-05 | In-Solar Tech Co., Ltd. | Method for manufacturing absorber layers for solar cell |
WO2005017963A2 (en) | 2003-08-04 | 2005-02-24 | Asm America, Inc. | Surface preparation prior to deposition on germanium |
US20070163639A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from microflake particles |
US8372734B2 (en) | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
US20070163640A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides |
US20070163642A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles |
US8623448B2 (en) | 2004-02-19 | 2014-01-07 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles |
US7605328B2 (en) * | 2004-02-19 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic thin-film cell produced from metallic blend using high-temperature printing |
US7700464B2 (en) * | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US7604843B1 (en) * | 2005-03-16 | 2009-10-20 | Nanosolar, Inc. | Metallic dispersion |
US8329501B1 (en) | 2004-02-19 | 2012-12-11 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles |
US20070169809A1 (en) * | 2004-02-19 | 2007-07-26 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides |
US7306823B2 (en) | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US20070163641A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
US8846141B1 (en) | 2004-02-19 | 2014-09-30 | Aeris Capital Sustainable Ip Ltd. | High-throughput printing of semiconductor precursor layer from microflake particles |
US8309163B2 (en) | 2004-02-19 | 2012-11-13 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
US7115304B2 (en) | 2004-02-19 | 2006-10-03 | Nanosolar, Inc. | High throughput surface treatment on coiled flexible substrates |
US20060060237A1 (en) * | 2004-09-18 | 2006-03-23 | Nanosolar, Inc. | Formation of solar cells on foil substrates |
KR20060060731A (en) * | 2004-03-31 | 2006-06-05 | 가부시키가이샤 히다치 고쿠사이 덴키 | Semiconductor device manufacturing method |
US7838868B2 (en) | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
US8541048B1 (en) | 2004-09-18 | 2013-09-24 | Nanosolar, Inc. | Formation of photovoltaic absorber layers on foil substrates |
US20090032108A1 (en) * | 2007-03-30 | 2009-02-05 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
US20060073276A1 (en) * | 2004-10-04 | 2006-04-06 | Eric Antonissen | Multi-zone atomic layer deposition apparatus and method |
SE527733C2 (en) * | 2004-10-08 | 2006-05-23 | Midsummer Ab | Device and method for producing solar cells |
WO2006047207A2 (en) * | 2004-10-21 | 2006-05-04 | University Of Delaware | Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates |
TW200634170A (en) * | 2004-11-10 | 2006-10-01 | Daystar Technologies Inc | Pressure control system in a photovoltaic substrate deposition apparatus |
JP2008520102A (en) * | 2004-11-10 | 2008-06-12 | デイスター テクノロジーズ,インコーポレイティド | Method and photovoltaic device using alkali-containing layer |
US7704896B2 (en) * | 2005-01-21 | 2010-04-27 | Asm International, N.V. | Atomic layer deposition of thin films on germanium |
US8084685B2 (en) * | 2006-01-12 | 2011-12-27 | Heliovolt Corporation | Apparatus for making controlled segregated phase domain structures |
US20070160763A1 (en) | 2006-01-12 | 2007-07-12 | Stanbery Billy J | Methods of making controlled segregated phase domain structures |
US7767904B2 (en) * | 2006-01-12 | 2010-08-03 | Heliovolt Corporation | Compositions including controlled segregated phase domain structures |
US8389852B2 (en) * | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
JP2009531535A (en) * | 2006-03-03 | 2009-09-03 | ガードギール,プラサード | Apparatus and method for chemical vapor deposition processing of a wide range of multilayer atomic layers of thin films |
US7632701B2 (en) * | 2006-05-08 | 2009-12-15 | University Of Central Florida Research Foundation, Inc. | Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor |
KR100810730B1 (en) * | 2006-06-19 | 2008-03-07 | (주)인솔라텍 | Manufacturing method of the optical absorber layer for solar cells |
US20090291293A1 (en) * | 2006-07-14 | 2009-11-26 | Dai Nippon Printing Co., Ltd. | Film with transparent electroconductive membrane and its use |
US7964418B2 (en) * | 2006-08-18 | 2011-06-21 | Solyndra Llc | Real time process monitoring and control for semiconductor junctions |
MY148287A (en) * | 2006-08-29 | 2013-03-29 | Pilkington Group Ltd | Method of making a low-resistivity, doped zinc oxide coated glass article and the coated glass article made thereby |
ATE528420T1 (en) * | 2006-09-08 | 2011-10-15 | Pilkington Group Ltd | LOW TEMPERATURE PROCESS FOR PRODUCING A ZINC OXIDE COATED OBJECT |
US8187904B2 (en) * | 2008-07-21 | 2012-05-29 | Solopower, Inc. | Methods of forming thin layers of photovoltaic absorbers |
US8323735B2 (en) * | 2006-10-13 | 2012-12-04 | Solopower, Inc. | Method and apparatus to form solar cell absorber layers with planar surface |
WO2008057119A1 (en) * | 2006-11-09 | 2008-05-15 | Midwest Research Institue | Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors |
WO2008063190A2 (en) | 2006-11-09 | 2008-05-29 | Midwest Research Institute | Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films |
WO2008151067A2 (en) * | 2007-05-30 | 2008-12-11 | University Of Florida Research Foundation, Inc. | CHEMICAL VAPOR DEPOSITION OF CuInXGa1- X(SeyS1-y)2 THIN FILMS AND USES THEREOF |
US8034317B2 (en) | 2007-06-18 | 2011-10-11 | Heliovolt Corporation | Assemblies of anisotropic nanoparticles |
US7947128B2 (en) * | 2007-06-28 | 2011-05-24 | Siemens Energy, Inc. | Atomic layer epitaxy processed insulation |
US20170236710A1 (en) * | 2007-09-05 | 2017-08-17 | Ascent Solar Technologies, Inc. | Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers |
WO2009076322A2 (en) * | 2007-12-06 | 2009-06-18 | Craig Leidholm | Methods and devices for processing a precursor layer in a group via environment |
WO2009094622A2 (en) * | 2008-01-24 | 2009-07-30 | Microcontinuum, Inc. | Vacuum coating techniques |
AU2009220188A1 (en) * | 2008-03-04 | 2009-09-11 | Solexant Corp. | Process for making solar cells |
CN101978101B (en) * | 2008-03-18 | 2013-09-04 | 索莱克山特公司 | Improved back contact in thin solar cells |
US8410357B2 (en) * | 2008-03-18 | 2013-04-02 | Solexant Corp. | Back contact for thin film solar cells |
EP2274456A1 (en) * | 2008-03-26 | 2011-01-19 | Solexant Corp. | Improved junctions in substrate solar cells |
KR101580575B1 (en) | 2008-04-25 | 2015-12-28 | 에이에스엠 인터내셔널 엔.브이. | Synthesis and use of precursors for ALD of tellurium and selenium thin films |
US10041169B2 (en) * | 2008-05-27 | 2018-08-07 | Picosun Oy | System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor |
US20100226629A1 (en) * | 2008-07-21 | 2010-09-09 | Solopower, Inc. | Roll-to-roll processing and tools for thin film solar cell manufacturing |
FR2934611B1 (en) * | 2008-08-01 | 2011-03-11 | Electricite De France | CONSTRUCTION OF TRANSPARENT AND CONDUCTIVE OXIDE LAYER FOR USE IN PHOTOVOLTAIC STRUCTURE |
US8282334B2 (en) * | 2008-08-01 | 2012-10-09 | Picosun Oy | Atomic layer deposition apparatus and loading methods |
US20120090176A1 (en) * | 2008-11-06 | 2012-04-19 | Robert Stancel | Tensioned mounting of solar panels |
US8163341B2 (en) | 2008-11-19 | 2012-04-24 | Micron Technology, Inc. | Methods of forming metal-containing structures, and methods of forming germanium-containing structures |
KR20100073717A (en) * | 2008-12-23 | 2010-07-01 | 삼성전자주식회사 | Solar cell and method of fabricating the same |
KR101071545B1 (en) * | 2008-12-30 | 2011-10-11 | 주식회사 메카로닉스 | Method for fabricating cigs thin layer |
KR101071544B1 (en) * | 2009-01-12 | 2011-10-10 | 주식회사 메카로닉스 | Method for fabricating cigs thin layer by ald |
CA2740363A1 (en) * | 2009-02-04 | 2010-08-12 | Heliovolt Corporation | Method of forming an indium-containing transparent conductive oxide film, metal targets used in the method and photovoltaic devices utilizing said films |
US8115095B2 (en) * | 2009-02-20 | 2012-02-14 | Miasole | Protective layer for large-scale production of thin-film solar cells |
US8110738B2 (en) | 2009-02-20 | 2012-02-07 | Miasole | Protective layer for large-scale production of thin-film solar cells |
US8134069B2 (en) | 2009-04-13 | 2012-03-13 | Miasole | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
US7785921B1 (en) * | 2009-04-13 | 2010-08-31 | Miasole | Barrier for doped molybdenum targets |
US7897020B2 (en) * | 2009-04-13 | 2011-03-01 | Miasole | Method for alkali doping of thin film photovoltaic materials |
US8418418B2 (en) | 2009-04-29 | 2013-04-16 | 3Form, Inc. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
US8624105B2 (en) * | 2009-05-01 | 2014-01-07 | Synkera Technologies, Inc. | Energy conversion device with support member having pore channels |
WO2010132871A1 (en) | 2009-05-15 | 2010-11-18 | Wayne State University | Thermally stable volatile film precursors |
US8247243B2 (en) | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
US9040113B2 (en) * | 2009-05-26 | 2015-05-26 | Uchicago Argonne, Llc | Atomic layer deposition of metal sulfide thin films using non-halogenated precursors |
KR20130122693A (en) * | 2009-06-05 | 2013-11-07 | 헬리오볼트 코오퍼레이션 | Process for synthesizing a thin film or composition layer via non-contact pressure containment |
US8277894B2 (en) * | 2009-07-16 | 2012-10-02 | Rohm And Haas Electronic Materials Llc | Selenium ink and methods of making and using same |
US8308973B2 (en) * | 2009-07-27 | 2012-11-13 | Rohm And Haas Electronic Materials Llc | Dichalcogenide selenium ink and methods of making and using same |
US9284639B2 (en) * | 2009-07-30 | 2016-03-15 | Apollo Precision Kunming Yuanhong Limited | Method for alkali doping of thin film photovoltaic materials |
US8585936B2 (en) * | 2009-08-04 | 2013-11-19 | Precursor Energetics, Inc. | Methods for photovoltaic absorbers with controlled group 11 stoichiometry |
EP2462150A2 (en) * | 2009-08-04 | 2012-06-13 | Precursor Energetics, Inc. | Polymeric precursors for caigs and aigs silver-containing photovoltaics |
KR20120055588A (en) * | 2009-08-05 | 2012-05-31 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Barrier-coated thin-film photovoltaic cells |
US9322939B2 (en) | 2009-09-08 | 2016-04-26 | Koninklijke Philips N.V. | Imaging measurement system with a printed photodetector array |
US8256621B2 (en) * | 2009-09-11 | 2012-09-04 | Pro-Pak Industries, Inc. | Load tray and method for unitizing a palletized load |
US20110067998A1 (en) * | 2009-09-20 | 2011-03-24 | Miasole | Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing |
US20110076798A1 (en) * | 2009-09-28 | 2011-03-31 | Rohm And Haas Electronic Materials Llc | Dichalcogenide ink containing selenium and methods of making and using same |
US8709548B1 (en) | 2009-10-20 | 2014-04-29 | Hanergy Holding Group Ltd. | Method of making a CIG target by spray forming |
US8709335B1 (en) | 2009-10-20 | 2014-04-29 | Hanergy Holding Group Ltd. | Method of making a CIG target by cold spraying |
CN105304479B (en) * | 2009-10-23 | 2018-06-01 | 哈佛大学校长及研究员协会 | For the self-aligned barrier layers and capping layer of interconnection |
KR101829380B1 (en) | 2009-10-26 | 2018-02-19 | 에이에스엠 인터내셔널 엔.브이. | Synthesis and use of precursors for ALD of group VA element containing thin films |
KR101687219B1 (en) | 2009-11-05 | 2016-12-16 | 다우 글로벌 테크놀로지스 엘엘씨 | Manufacture of n-type chalcogenide compositions and their uses in photovoltaic devices |
DE102009054973A1 (en) * | 2009-12-18 | 2011-06-22 | SULFURCELL Solartechnik GmbH, 12487 | Chalcopyrite thin film solar cell with CdS / (Zn (S, O) buffer layer and associated manufacturing process |
US8889469B2 (en) | 2009-12-28 | 2014-11-18 | Aeris Capital Sustainable Ip Ltd. | Multi-nary group IB and VIA based semiconductor |
US8729543B2 (en) * | 2011-01-05 | 2014-05-20 | Aeris Capital Sustainable Ip Ltd. | Multi-nary group IB and VIA based semiconductor |
CN102117701B (en) * | 2009-12-31 | 2014-08-20 | 鸿富锦精密工业(深圳)有限公司 | Dye-sensitization solar battery electrode manufacturing equipment and solar battery manufacturing method |
US20110162696A1 (en) * | 2010-01-05 | 2011-07-07 | Miasole | Photovoltaic materials with controllable zinc and sodium content and method of making thereof |
US8021641B2 (en) * | 2010-02-04 | 2011-09-20 | Alliance For Sustainable Energy, Llc | Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom |
TWI460067B (en) * | 2010-02-24 | 2014-11-11 | Hon Hai Prec Ind Co Ltd | Surface activating process device |
CN102189617B (en) * | 2010-03-03 | 2014-02-19 | 鸿富锦精密工业(深圳)有限公司 | Surface activation treatment device |
TWI411121B (en) * | 2010-03-11 | 2013-10-01 | Ind Tech Res Inst | Method of forming light absorption layer and solar cell structure using the same |
US9284643B2 (en) * | 2010-03-23 | 2016-03-15 | Pneumaticoat Technologies Llc | Semi-continuous vapor deposition process for the manufacture of coated particles |
WO2011146115A1 (en) | 2010-05-21 | 2011-11-24 | Heliovolt Corporation | Liquid precursor for deposition of copper selenide and method of preparing the same |
CN102294642B (en) * | 2010-06-25 | 2014-03-26 | 鸿富锦精密工业(深圳)有限公司 | Polishing device |
TWI422045B (en) * | 2010-07-08 | 2014-01-01 | Gcsol Tech Co Ltd | Cigs thin-film solar cell manufacturing apparatus and method |
WO2012015989A2 (en) * | 2010-07-27 | 2012-02-02 | Indiana University Research & Technology Corporation | Layer-by-layer nanoassembled nanoparticles based thin films for solar cell and other applications |
US20120034734A1 (en) * | 2010-08-05 | 2012-02-09 | Aventa Technologies Llc | System and method for fabricating thin-film photovoltaic devices |
US9142408B2 (en) | 2010-08-16 | 2015-09-22 | Alliance For Sustainable Energy, Llc | Liquid precursor for deposition of indium selenide and method of preparing the same |
US9822446B2 (en) | 2010-08-24 | 2017-11-21 | Wayne State University | Thermally stable volatile precursors |
US9255327B2 (en) * | 2010-08-24 | 2016-02-09 | Wayne State University | Thermally stable volatile precursors |
US8282995B2 (en) | 2010-09-30 | 2012-10-09 | Rohm And Haas Electronic Materials Llc | Selenium/group 1b/group 3a ink and methods of making and using same |
US8048707B1 (en) | 2010-10-19 | 2011-11-01 | Miasole | Sulfur salt containing CIG targets, methods of making and methods of use thereof |
US7935558B1 (en) | 2010-10-19 | 2011-05-03 | Miasole | Sodium salt containing CIG targets, methods of making and methods of use thereof |
US9169548B1 (en) | 2010-10-19 | 2015-10-27 | Apollo Precision Fujian Limited | Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof |
US8119513B1 (en) | 2010-11-22 | 2012-02-21 | General Electric Company | Method for making cadmium sulfide layer |
US8950470B2 (en) | 2010-12-30 | 2015-02-10 | Poole Ventura, Inc. | Thermal diffusion chamber control device and method |
US8097085B2 (en) * | 2011-01-28 | 2012-01-17 | Poole Ventura, Inc. | Thermal diffusion chamber |
US8372687B2 (en) * | 2011-02-16 | 2013-02-12 | Ahbee1, Lp | System, method and apparatus for forming multiple layers in a single process chamber |
US20140224333A1 (en) * | 2011-07-29 | 2014-08-14 | Kyocera Corporation | Photoelectric conversion device |
ITMI20111559A1 (en) | 2011-08-30 | 2013-03-01 | St Microelectronics Srl | LAYER TCO OF FRONTAL CONTACT OF A SOLAR FILM WITH A THIN FILM WITH LAYER REFRACTORY METAL BARRIER AND MANUFACTURING PROCESS |
US8551802B2 (en) * | 2011-09-12 | 2013-10-08 | Intermolecular, Inc. | Laser annealing for thin film solar cells |
US9243322B2 (en) | 2011-10-31 | 2016-01-26 | 3M Innovative Properties Company | Methods for applying a coating to a substrate in rolled form |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
EP2834853A4 (en) | 2012-02-29 | 2015-12-09 | Alliance Sustainable Energy | SYSTEMS AND METHODS FOR FORMING SOLAR CELLS WITH CuInSe2 AND Cu(In,Ga)Se2 FILMS |
US9105797B2 (en) | 2012-05-31 | 2015-08-11 | Alliance For Sustainable Energy, Llc | Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se |
CN103545112A (en) * | 2012-07-13 | 2014-01-29 | 中国科学院大连化学物理研究所 | Solar cell photo-anode using semiconductor thin film as sensitizing agent and preparation method of solar cell photo-anode |
KR101327536B1 (en) * | 2012-07-17 | 2013-11-08 | 한국과학기술연구원 | Method for preparing cis based film, the cis based film prepared therefrom, and film solar cell including the cis based film |
DE102012221080A1 (en) * | 2012-11-19 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Method for producing a layer on a surface region of an electronic component |
US10112836B2 (en) * | 2012-11-26 | 2018-10-30 | The Regents Of The University Of Michigan | Continuous nanosynthesis apparatus and process |
US8907115B2 (en) | 2012-12-10 | 2014-12-09 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition |
US9698285B2 (en) | 2013-02-01 | 2017-07-04 | First Solar, Inc. | Photovoltaic device including a P-N junction and method of manufacturing |
US9758866B2 (en) | 2013-02-13 | 2017-09-12 | Wayne State University | Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films |
US11876140B2 (en) | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
CN104183663B (en) | 2013-05-21 | 2017-04-12 | 第一太阳能马来西亚有限公司 | Photovoltaic device and manufacturing method thereof |
US10062800B2 (en) * | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
US9157149B2 (en) | 2013-06-28 | 2015-10-13 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
US9249505B2 (en) | 2013-06-28 | 2016-02-02 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
WO2015009779A1 (en) * | 2013-07-16 | 2015-01-22 | 3M Innovative Properties Company | Roll processing of film |
KR20150031889A (en) * | 2013-09-17 | 2015-03-25 | 엘지이노텍 주식회사 | Solar cell |
DE102013219213A1 (en) * | 2013-09-24 | 2015-03-26 | Osram Gmbh | Process chamber for a chemical reaction coating process and method for coating an optical object by means of a chemical reaction coating process |
US10529883B2 (en) | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
US9929305B2 (en) | 2015-04-28 | 2018-03-27 | International Business Machines Corporation | Surface treatment for photovoltaic device |
CN105742389B (en) * | 2016-04-13 | 2017-05-10 | 电子科技大学 | Synthesis method of copper-indium-gallium-sulphur material, thin-film solar cell and preparation method of thin-film solar cell |
JP6696003B2 (en) | 2016-05-09 | 2020-05-20 | セイジ・エレクトロクロミクス,インコーポレイテッド | Electrochromic device including means for preventing ion migration and process of forming same |
US10573522B2 (en) * | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US20180127875A1 (en) * | 2016-11-04 | 2018-05-10 | National Chung Shan Institute Of Science And Technology | Apparatus for performing selenization and sulfurization process on glass substrate |
US11821071B2 (en) | 2019-03-11 | 2023-11-21 | Lam Research Corporation | Precursors for deposition of molybdenum-containing films |
KR20210046566A (en) * | 2019-10-17 | 2021-04-28 | 에이에스엠 아이피 홀딩 비.브이. | Atomic layer deposition of indium gallium zinc oxide |
FR3112796B1 (en) | 2020-07-21 | 2022-11-25 | Inst Polytechnique Grenoble | Process for functionalizing a substrate based on a polymer by chemical deposition of a thin layer |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3923556A (en) * | 1973-12-03 | 1975-12-02 | Wilson Eng Co Inc Lee | Formation of open coil with spacer band |
US5614273A (en) * | 1993-10-27 | 1997-03-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. | Process and apparatus for plasma-activated electron beam vaporization |
US6353205B1 (en) * | 1998-05-06 | 2002-03-05 | Click Clack Limited | Laser cut saw blades |
US20040001922A1 (en) * | 2002-06-27 | 2004-01-01 | Wacker-Chemie Gmbh | Method for the batch coating of saw wire |
US6875667B2 (en) * | 2002-10-10 | 2005-04-05 | Nec Electronics Corporation | Method for forming capacitor |
Family Cites Families (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2224997A (en) * | 1937-04-22 | 1940-12-17 | Walther H Duisberg | Coiling means for metal bands for the purpose of heat treating the same |
US3114539A (en) * | 1957-02-13 | 1963-12-17 | Wilson | Method of and apparatus for annealing strip metal |
US3109877A (en) * | 1960-07-01 | 1963-11-05 | Wilson Lee | Apparatus for modifying the composition of strip metal |
US3185185A (en) * | 1961-01-04 | 1965-05-25 | Sobel Metal Products Inc | Wire shaping apparatus |
FR1302506A (en) * | 1961-07-06 | 1962-08-31 | Heurtey & Cie | Process for forming expanded coils of products in strips and apparatus allowing the implementation of such a process |
US3379803A (en) * | 1964-05-04 | 1968-04-23 | Union Carbide Corp | Coating method and apparatus for deposition of polymer-forming vapor under vacuum |
US4013539A (en) * | 1973-01-12 | 1977-03-22 | Coulter Information Systems, Inc. | Thin film deposition apparatus |
US4048953A (en) * | 1974-06-19 | 1977-09-20 | Pfizer Inc. | Apparatus for vapor depositing pyrolytic carbon on porous sheets of carbon material |
SE393967B (en) | 1974-11-29 | 1977-05-31 | Sateko Oy | PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE |
US4058030A (en) * | 1976-03-11 | 1977-11-15 | Simmons Willis H | Water faucet tool means |
US4057439A (en) * | 1976-08-25 | 1977-11-08 | Solarex Corporation | Solar panel |
US4416912A (en) * | 1979-10-13 | 1983-11-22 | The Gillette Company | Formation of coatings on cutting edges |
GB2091236B (en) * | 1981-01-16 | 1984-10-17 | Pa Management Consult | Thin films of compounds and alloy compounds of group 111 and group v elements |
US4492181A (en) * | 1982-03-19 | 1985-01-08 | Sovonics Solar Systems | Apparatus for continuously producing tandem amorphous photovoltaic cells |
US4438724A (en) * | 1982-08-13 | 1984-03-27 | Energy Conversion Devices, Inc. | Grooved gas gate |
US4803947A (en) * | 1986-01-15 | 1989-02-14 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
JPS6464369A (en) * | 1987-09-04 | 1989-03-10 | Matsushita Electric Ind Co Ltd | Manufacture of indium copper selenide |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
US5016562A (en) | 1988-04-27 | 1991-05-21 | Glasstech Solar, Inc. | Modular continuous vapor deposition system |
US5401587A (en) | 1990-03-27 | 1995-03-28 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Anisotropic nanophase composite material and method of producing same |
US5092939A (en) * | 1990-11-30 | 1992-03-03 | United Solar Systems Corporation | Photovoltaic roof and method of making same |
US5273911A (en) | 1991-03-07 | 1993-12-28 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a thin-film solar cell |
DE4207659A1 (en) | 1992-03-11 | 1993-09-16 | Abb Patent Gmbh | METHOD FOR PRODUCING A PHOTOELECTROCHEMICAL CELL AND A CLEARLY PRODUCED CELL |
DE4324320B4 (en) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Method and device for producing a thin-film photovoltaic conversion device |
FR2694451B1 (en) | 1992-07-29 | 1994-09-30 | Asulab Sa | Photovoltaic cell. |
EP0662247B1 (en) * | 1992-09-22 | 1999-03-10 | Siemens Aktiengesellschaft | Process for rapidly generating a chalkopyrite semiconductor on a substrate |
JP3064701B2 (en) * | 1992-10-30 | 2000-07-12 | 松下電器産業株式会社 | Method for producing chalcopyrite-type compound thin film |
EP0609104B1 (en) * | 1993-01-29 | 1998-05-20 | Canon Kabushiki Kaisha | Process for the formation of functional deposited films |
US5436204A (en) * | 1993-04-12 | 1995-07-25 | Midwest Research Institute | Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications |
AUPM996094A0 (en) | 1994-12-08 | 1995-01-05 | Pacific Solar Pty Limited | Multilayer solar cells with bypass diode protection |
JP3354747B2 (en) | 1995-05-22 | 2002-12-09 | 株式会社フジクラ | CVD reactor and method for producing oxide superconductor |
US5674325A (en) | 1995-06-07 | 1997-10-07 | Photon Energy, Inc. | Thin film photovoltaic device and process of manufacture |
US5986206A (en) | 1997-12-10 | 1999-11-16 | Nanogram Corporation | Solar cell |
GB9806066D0 (en) | 1998-03-20 | 1998-05-20 | Cambridge Display Tech Ltd | Multilayer photovoltaic or photoconductive devices |
US6107562A (en) * | 1998-03-24 | 2000-08-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method for manufacturing the same, and solar cell using the same |
US6075203A (en) | 1998-05-18 | 2000-06-13 | E. I. Du Pont Nemours And Company | Photovoltaic cells |
JP2997773B1 (en) | 1998-07-15 | 2000-01-11 | 工業技術院長 | Metal complexes, oxide semiconductor electrodes and solar cells useful as sensitizers |
EP1028475A1 (en) | 1999-02-09 | 2000-08-16 | Sony International (Europe) GmbH | Electronic device comprising a columnar discotic phase |
US6186090B1 (en) | 1999-03-04 | 2001-02-13 | Energy Conversion Devices, Inc. | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor |
US6291763B1 (en) | 1999-04-06 | 2001-09-18 | Fuji Photo Film Co., Ltd. | Photoelectric conversion device and photo cell |
US6649824B1 (en) | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
WO2001037324A1 (en) * | 1999-11-16 | 2001-05-25 | Midwest Research Institute | A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2? |
DE10006778C2 (en) | 2000-02-09 | 2003-09-11 | Cis Solartechnik Gmbh | Process and furnace for the heat treatment of flexible, ribbon-shaped CIS solar cells |
US6270846B1 (en) | 2000-03-02 | 2001-08-07 | Sandia Corporation | Method for making surfactant-templated, high-porosity thin films |
US20020013487A1 (en) * | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
TW496907B (en) * | 2000-04-14 | 2002-08-01 | Asm Microchemistry Oy | Method and apparatus of growing a thin film onto a substrate |
US6919119B2 (en) | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
EP1176646A1 (en) | 2000-07-28 | 2002-01-30 | Ecole Polytechnique Féderale de Lausanne (EPFL) | Solid state heterojunction and solid state sensitized photovoltaic cell |
JP4662616B2 (en) * | 2000-10-18 | 2011-03-30 | パナソニック株式会社 | Solar cell |
FI118014B (en) | 2000-10-23 | 2007-05-31 | Asm Int | Process for making alumina thin films at low temperatures |
US6677516B2 (en) | 2001-01-29 | 2004-01-13 | Sharp Kabushiki Kaisha | Photovoltaic cell and process for producing the same |
US7091136B2 (en) | 2001-04-16 | 2006-08-15 | Basol Bulent M | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
US20030064153A1 (en) * | 2001-10-01 | 2003-04-03 | Rajendra Solanki | Method of depositing a metallic film on a substrate |
US7777303B2 (en) | 2002-03-19 | 2010-08-17 | The Regents Of The University Of California | Semiconductor-nanocrystal/conjugated polymer thin films |
JP4003163B2 (en) * | 2002-01-15 | 2007-11-07 | 富士フイルム株式会社 | Multi-layer coating film manufacturing equipment |
US6861094B2 (en) * | 2002-04-25 | 2005-03-01 | Micron Technology, Inc. | Methods for forming thin layers of materials on micro-device workpieces |
US6838114B2 (en) * | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US6852920B2 (en) | 2002-06-22 | 2005-02-08 | Nanosolar, Inc. | Nano-architected/assembled solar electricity cell |
US6946597B2 (en) | 2002-06-22 | 2005-09-20 | Nanosular, Inc. | Photovoltaic devices fabricated by growth from porous template |
US7291782B2 (en) | 2002-06-22 | 2007-11-06 | Nanosolar, Inc. | Optoelectronic device and fabrication method |
US20050084610A1 (en) | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
US6830983B2 (en) * | 2002-08-29 | 2004-12-14 | Micron Technology, Inc. | Method of making an oxygen diffusion barrier for semiconductor devices using platinum, rhodium, or iridium stuffed with silicon oxide |
WO2004023527A2 (en) | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
US6974976B2 (en) * | 2002-09-30 | 2005-12-13 | Miasole | Thin-film solar cells |
US6878207B2 (en) | 2003-02-19 | 2005-04-12 | Energy Conversion Devices, Inc. | Gas gate for isolating regions of differing gaseous pressure |
US6716693B1 (en) * | 2003-03-27 | 2004-04-06 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a surface coating layer within an opening within a body by atomic layer deposition |
US6888172B2 (en) | 2003-04-11 | 2005-05-03 | Eastman Kodak Company | Apparatus and method for encapsulating an OLED formed on a flexible substrate |
US7258895B2 (en) * | 2003-08-06 | 2007-08-21 | Micron Technology, Inc. | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate |
US6891191B2 (en) | 2003-09-02 | 2005-05-10 | Organic Vision Inc. | Organic semiconductor devices and methods of fabrication |
US20050172897A1 (en) * | 2004-02-09 | 2005-08-11 | Frank Jansen | Barrier layer process and arrangement |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
WO2005081789A2 (en) | 2004-02-19 | 2005-09-09 | Nanosolar, Inc. | Formation of CIGS Absorber Layer by Atomic Layer Deposition |
US7045205B1 (en) | 2004-02-19 | 2006-05-16 | Nanosolar, Inc. | Device based on coated nanoporous structure |
US7115304B2 (en) * | 2004-02-19 | 2006-10-03 | Nanosolar, Inc. | High throughput surface treatment on coiled flexible substrates |
US7781034B2 (en) * | 2004-05-04 | 2010-08-24 | Sigma Laboratories Of Arizona, Llc | Composite modular barrier structures and packages |
JP2008514006A (en) | 2004-09-18 | 2008-05-01 | ナノソーラー インコーポレイテッド | Formation of solar cells on foil substrates |
KR100850000B1 (en) * | 2005-09-06 | 2008-08-01 | 주식회사 엘지화학 | Process for Preparation of Absorption Layer of Solar Cell |
US20070111367A1 (en) | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
US7867551B2 (en) * | 2006-09-21 | 2011-01-11 | Solopower, Inc. | Processing method for group IBIIIAVIA semiconductor layer growth |
US20080175993A1 (en) | 2006-10-13 | 2008-07-24 | Jalal Ashjaee | Reel-to-reel reaction of a precursor film to form solar cell absorber |
US9103033B2 (en) | 2006-10-13 | 2015-08-11 | Solopower Systems, Inc. | Reel-to-reel reaction of precursor film to form solar cell absorber |
-
2004
- 2004-02-19 US US10/782,545 patent/US7115304B2/en not_active Expired - Fee Related
- 2004-09-18 US US10/943,658 patent/US7858151B2/en not_active Expired - Fee Related
-
2005
- 2005-02-07 WO PCT/US2005/003691 patent/WO2005081788A2/en not_active Application Discontinuation
- 2005-02-07 EP EP05712939A patent/EP1723265A4/en not_active Withdrawn
-
2006
- 2006-03-13 US US11/374,716 patent/US20060153985A1/en not_active Abandoned
-
2008
- 2008-03-07 US US12/044,899 patent/US20080305269A1/en not_active Abandoned
- 2008-04-25 US US12/110,252 patent/US20090025640A1/en not_active Abandoned
-
2010
- 2010-12-27 US US12/978,801 patent/US20110189815A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3923556A (en) * | 1973-12-03 | 1975-12-02 | Wilson Eng Co Inc Lee | Formation of open coil with spacer band |
US5614273A (en) * | 1993-10-27 | 1997-03-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. | Process and apparatus for plasma-activated electron beam vaporization |
US6353205B1 (en) * | 1998-05-06 | 2002-03-05 | Click Clack Limited | Laser cut saw blades |
US20040001922A1 (en) * | 2002-06-27 | 2004-01-01 | Wacker-Chemie Gmbh | Method for the batch coating of saw wire |
US6875667B2 (en) * | 2002-10-10 | 2005-04-05 | Nec Electronics Corporation | Method for forming capacitor |
Also Published As
Publication number | Publication date |
---|---|
US20110189815A1 (en) | 2011-08-04 |
EP1723265A2 (en) | 2006-11-22 |
EP1723265A4 (en) | 2008-12-24 |
US20090025640A1 (en) | 2009-01-29 |
US20050186342A1 (en) | 2005-08-25 |
US7115304B2 (en) | 2006-10-03 |
WO2005081788A2 (en) | 2005-09-09 |
US20080305269A1 (en) | 2008-12-11 |
US7858151B2 (en) | 2010-12-28 |
US20050186338A1 (en) | 2005-08-25 |
US20060153985A1 (en) | 2006-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005081788A3 (en) | High throughput surface treatment on coiled flexible substrates | |
WO2005081333A3 (en) | Diffusion barrier layer and method for manufacturing a diffusion barrier layer | |
IL192072A0 (en) | Device, system and method for the surface treatment of substrates | |
TWI365480B (en) | Apparatus and method for treating substrate | |
WO2001099173A3 (en) | Method of treating a substrate | |
TWI347151B (en) | Flexible substrate having interlaminar junctions, and process for producing the same | |
WO2002083981A1 (en) | Device and method for electroless plating | |
AU2003292678A1 (en) | Plasma generator, ozone generator, substrate processing apparatus, and method for manufacturing semiconductor device | |
AU2003264456A1 (en) | Input device and process for manufacturing the same, portable electronic apparatus comprising input device | |
EP1469509A4 (en) | Method and device for processing substrate, and apparatus for manufacturing semiconductor device | |
AU2003234287A1 (en) | Method and apparatus for treating a substrate with an ozone-solvent solution iii | |
WO2007050500A3 (en) | Chemical wipes | |
TW200722543A (en) | Improving adhesion and minimizing oxidation on electroless Co alloy films for integration with low k inter-metal dielectric and etch stop | |
WO2007038427A3 (en) | Method and apparatus for electronic device manufacture using shadow masks | |
TWI370503B (en) | Apparatus and method for treating substrate | |
WO2005101522A3 (en) | Process and device for cleaning and etching a substrate with a transparent conductive oxide layer | |
TWI265349B (en) | Substrate for electro-optical device, method of manufacturing substrate for electro-optical device, electro-optical device and electronic apparatus | |
SG116564A1 (en) | Substrate contact and method of forming the same. | |
TW200801217A (en) | Sputtering apparatus, method of driving the same, and method of manufacturing substrate using the same | |
WO2008078500A1 (en) | Film deposition apparatus and film deposition method | |
EP1898456A4 (en) | Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatus | |
TW200516700A (en) | Metho for forming intermetal dielectric | |
SG113456A1 (en) | Method and apparatus for manufacturing a display, such as, for instance, a polymer oled display, a display and a substrate for use in the method | |
TW200643517A (en) | Photoresist coating method and apparatus | |
SG156622A1 (en) | Ultraviolet (uv) radiation treatment methods for subatmospheric chemical vapor deposition (sacvd) of ozone-tetraethoxysilane (o3-teos) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005712939 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2005712939 Country of ref document: EP |