WO2005083159A3 - Apparatus adapted for membrane mediated electropolishing - Google Patents

Apparatus adapted for membrane mediated electropolishing Download PDF

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Publication number
WO2005083159A3
WO2005083159A3 PCT/US2004/037746 US2004037746W WO2005083159A3 WO 2005083159 A3 WO2005083159 A3 WO 2005083159A3 US 2004037746 W US2004037746 W US 2004037746W WO 2005083159 A3 WO2005083159 A3 WO 2005083159A3
Authority
WO
WIPO (PCT)
Prior art keywords
work
piece
membrane
electrode
enclosed volume
Prior art date
Application number
PCT/US2004/037746
Other languages
French (fr)
Other versions
WO2005083159A2 (en
Inventor
Stephen Mazur
Charles E Jackson Jr
Gary W Foggin
Original Assignee
Du Pont
Stephen Mazur
Charles E Jackson Jr
Gary W Foggin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont, Stephen Mazur, Charles E Jackson Jr, Gary W Foggin filed Critical Du Pont
Priority to EP04810803A priority Critical patent/EP1718787A2/en
Priority to JP2007500747A priority patent/JP2007523264A/en
Publication of WO2005083159A2 publication Critical patent/WO2005083159A2/en
Publication of WO2005083159A3 publication Critical patent/WO2005083159A3/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00Combined machining
    • B23H5/06Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08Electrolytic grinding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684Smoothing; Planarisation

Abstract

This invention provides a membrane-mediated electropolishing apparatus for polishing and/or planarizing metal work-pieces. The work-piece is wetted with a low-conductivity fluid. The wetted work-piece is contacted with a first side of a charge-selective ion-conducting membrane, wherein the second side contacts a conductive electrolyte solution in electrical contact with a electrode. Current flow between the electrode and the work-piece electropolishes metal from the work-piece. This invention also provides a half-cell adapted for use in membrane-mediated electropolishing having a fully or partially enclosed volume, a conductive electrolyte which partially or essentially fills the enclosed volume, an electrode which is in contact with the electrolyte, and a charge-selective ion-conducting membrane which seals one surface of the enclosed volume, cavity or vessel in such a way that the internal surface of said membrane contacts the electrolyte solution or gel and the external surface is accessible to contact the work-piece.
PCT/US2004/037746 2004-02-23 2004-11-12 Apparatus adapted for membrane mediated electropolishing WO2005083159A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04810803A EP1718787A2 (en) 2004-02-23 2004-11-12 Apparatus adapted for membrane mediated electropolishing
JP2007500747A JP2007523264A (en) 2004-02-23 2004-11-12 Membrane electrolytic polishing equipment

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US54619204P 2004-02-23 2004-02-23
US54619804P 2004-02-23 2004-02-23
US60/546,192 2004-02-23
US60/546,198 2004-02-23
US57096704P 2004-05-14 2004-05-14
US60/570,967 2004-05-14
US61169904P 2004-09-22 2004-09-22
US60/611,699 2004-09-22

Publications (2)

Publication Number Publication Date
WO2005083159A2 WO2005083159A2 (en) 2005-09-09
WO2005083159A3 true WO2005083159A3 (en) 2005-11-10

Family

ID=34916517

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/037746 WO2005083159A2 (en) 2004-02-23 2004-11-12 Apparatus adapted for membrane mediated electropolishing

Country Status (5)

Country Link
US (1) US7566385B2 (en)
EP (1) EP1718787A2 (en)
JP (1) JP2007523264A (en)
TW (1) TW200528587A (en)
WO (1) WO2005083159A2 (en)

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Also Published As

Publication number Publication date
US20070051619A1 (en) 2007-03-08
JP2007523264A (en) 2007-08-16
US7566385B2 (en) 2009-07-28
WO2005083159A2 (en) 2005-09-09
TW200528587A (en) 2005-09-01
EP1718787A2 (en) 2006-11-08

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