WO2005083792A3 - Composite quantum dot structures - Google Patents

Composite quantum dot structures Download PDF

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Publication number
WO2005083792A3
WO2005083792A3 PCT/EP2005/050840 EP2005050840W WO2005083792A3 WO 2005083792 A3 WO2005083792 A3 WO 2005083792A3 EP 2005050840 W EP2005050840 W EP 2005050840W WO 2005083792 A3 WO2005083792 A3 WO 2005083792A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive layer
dimensions
quantum dot
region
structures
Prior art date
Application number
PCT/EP2005/050840
Other languages
French (fr)
Other versions
WO2005083792A2 (en
Inventor
Michael G Burt
Original Assignee
Trackdale Ltd
Michael G Burt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trackdale Ltd, Michael G Burt filed Critical Trackdale Ltd
Priority to US10/589,756 priority Critical patent/US20080230764A1/en
Priority to EP05716828A priority patent/EP1719182A2/en
Priority to BRPI0508290-0A priority patent/BRPI0508290A/en
Priority to AU2005217530A priority patent/AU2005217530A1/en
Priority to JP2007500228A priority patent/JP2007525031A/en
Priority to RU2006134277/09A priority patent/RU2006134277A/en
Priority to CA002557494A priority patent/CA2557494A1/en
Publication of WO2005083792A2 publication Critical patent/WO2005083792A2/en
Publication of WO2005083792A3 publication Critical patent/WO2005083792A3/en
Priority to IL177364A priority patent/IL177364A0/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

A composite quantum dot structure (4) comprises a charge carrier confinement region, such as a quantum dot (2), a barrier (5) and an electrically conductive layer (3). This structure allows the dimensions of the conductive layer (3) to be substantially independent of the size of the region (2), so that the dimensions of the region (2) can thus be selected in order to achieve desired optical properties, while the electrically conductive layer (3) can be of sufficient thickness to ensure that it can be reliably deposited. The structure may also include a cladding layer (7) (Figure 4) to compensate for any lack of chemical affinity between the barrier (5) and conductive layer (3). An ensemble of such structures be provided in which the quantum dots (1) have various radii but the dimensions of the conductive layers (3) and the overall dimensions of the structures are substantially uniform, e.g. for use in an amplifier configured to amplify light of various wavelengths.
PCT/EP2005/050840 2004-02-27 2005-02-28 Composite quantum dot structures WO2005083792A2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US10/589,756 US20080230764A1 (en) 2004-02-27 2005-02-28 Composite Quantum Dot Structures
EP05716828A EP1719182A2 (en) 2004-02-27 2005-02-28 Composite quantum dot structures
BRPI0508290-0A BRPI0508290A (en) 2004-02-27 2005-02-28 composite point quantum structures
AU2005217530A AU2005217530A1 (en) 2004-02-27 2005-02-28 Composite quantum dot structures
JP2007500228A JP2007525031A (en) 2004-02-27 2005-02-28 Synthetic quantum dot structure
RU2006134277/09A RU2006134277A (en) 2004-02-27 2005-02-28 COMPOSITE QUANTUM DOT STRUCTURE
CA002557494A CA2557494A1 (en) 2004-02-27 2005-02-28 Composite quantum dot structures
IL177364A IL177364A0 (en) 2004-02-27 2006-08-08 Composite quantum dot structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0404442.6 2004-02-27
GBGB0404442.6A GB0404442D0 (en) 2004-02-27 2004-02-27 Composite quantum dot structures

Publications (2)

Publication Number Publication Date
WO2005083792A2 WO2005083792A2 (en) 2005-09-09
WO2005083792A3 true WO2005083792A3 (en) 2005-10-27

Family

ID=32051030

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/050840 WO2005083792A2 (en) 2004-02-27 2005-02-28 Composite quantum dot structures

Country Status (12)

Country Link
US (1) US20080230764A1 (en)
EP (1) EP1719182A2 (en)
JP (1) JP2007525031A (en)
KR (1) KR20070007791A (en)
CN (1) CN1922736A (en)
AU (1) AU2005217530A1 (en)
BR (1) BRPI0508290A (en)
CA (1) CA2557494A1 (en)
GB (2) GB0404442D0 (en)
IL (1) IL177364A0 (en)
RU (1) RU2006134277A (en)
WO (1) WO2005083792A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687349B2 (en) * 2006-10-30 2010-03-30 Atmel Corporation Growth of silicon nanodots having a metallic coating using gaseous precursors
FR2927176B1 (en) * 2008-02-01 2010-05-14 Alcatel Lucent OPTICAL GUIDE DOPED BY RARE EARTH IONS AND OPTICAL DEVICE COMPRISING SAME.
JP4538516B2 (en) * 2008-08-08 2010-09-08 防衛省技術研究本部長 Optical semiconductor device
US8965208B2 (en) * 2009-05-22 2015-02-24 Kotura, Inc. Multi-channel optical device
US20110081109A1 (en) * 2009-10-05 2011-04-07 Thylen Lars H Nanoparticle array photonic waveguide
EP2636069B1 (en) * 2010-11-03 2021-07-07 L. Pierre De Rochemont Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof
JP6101977B2 (en) * 2013-03-13 2017-03-29 学校法人沖縄科学技術大学院大学学園 Metal-induced nanocrystallization of amorphous semiconductor quantum dots
CN105511150A (en) 2016-02-01 2016-04-20 京东方科技集团股份有限公司 Quantum bar, manufacturing method for quantum bar and display panel
CN108962984B (en) * 2018-06-11 2021-05-11 东南大学 Insulated gate bipolar transistor with quantum dot structure
EP4012003B1 (en) 2020-12-09 2024-02-28 Samsung Electronics Co., Ltd. Color filters and devices including the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991006035A1 (en) * 1989-10-18 1991-05-02 Research Corporation Technologies, Inc. Light-sensitive recording media
US5023139A (en) * 1989-04-04 1991-06-11 Research Corporation Technologies, Inc. Nonlinear optical materials
US6344272B1 (en) * 1997-03-12 2002-02-05 Wm. Marsh Rice University Metal nanoshells
US20020187347A1 (en) * 1997-03-12 2002-12-12 Wm. Marsh Rice University Multi-layer nanoshells
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US20030127659A1 (en) * 1998-04-01 2003-07-10 Bawendi Moungi G. Quantum dot white and colored light emitting diodes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7319709B2 (en) * 2002-07-23 2008-01-15 Massachusetts Institute Of Technology Creating photon atoms

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023139A (en) * 1989-04-04 1991-06-11 Research Corporation Technologies, Inc. Nonlinear optical materials
WO1991006035A1 (en) * 1989-10-18 1991-05-02 Research Corporation Technologies, Inc. Light-sensitive recording media
US6344272B1 (en) * 1997-03-12 2002-02-05 Wm. Marsh Rice University Metal nanoshells
US20020187347A1 (en) * 1997-03-12 2002-12-12 Wm. Marsh Rice University Multi-layer nanoshells
US20030127659A1 (en) * 1998-04-01 2003-07-10 Bawendi Moungi G. Quantum dot white and colored light emitting diodes
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BURLAK G N: "Optical radiation from coated microsphere with active core", PHYSICS LETTERS A, NORTH-HOLLAND PUBLISHING CO., AMSTERDAM, NL, vol. 299, no. 1, 24 June 2002 (2002-06-24), pages 94 - 101, XP004367563, ISSN: 0375-9601 *
E.PRODAN, C. RADLOFF, N.J. HALAS, P. NORDLANDER: "A Hybridization Model for the Plasmon Response of Complex Nanostructures", SCIENCE, vol. 302, 17 October 2003 (2003-10-17), pages 419 - 422, XP002342495 *

Also Published As

Publication number Publication date
CN1922736A (en) 2007-02-28
AU2005217530A1 (en) 2005-09-09
KR20070007791A (en) 2007-01-16
WO2005083792A2 (en) 2005-09-09
IL177364A0 (en) 2006-12-10
GB0504082D0 (en) 2005-04-06
EP1719182A2 (en) 2006-11-08
JP2007525031A (en) 2007-08-30
RU2006134277A (en) 2008-04-10
CA2557494A1 (en) 2005-09-09
GB0404442D0 (en) 2004-03-31
US20080230764A1 (en) 2008-09-25
BRPI0508290A (en) 2007-08-07

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