WO2005089165A3 - Nano-enabled memory devices and anisotropic charge carrying arrays - Google Patents
Nano-enabled memory devices and anisotropic charge carrying arrays Download PDFInfo
- Publication number
- WO2005089165A3 WO2005089165A3 PCT/US2005/007709 US2005007709W WO2005089165A3 WO 2005089165 A3 WO2005089165 A3 WO 2005089165A3 US 2005007709 W US2005007709 W US 2005007709W WO 2005089165 A3 WO2005089165 A3 WO 2005089165A3
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- WIPO (PCT)
- Prior art keywords
- substrate
- memory device
- nanoelements
- discrete energy
- memory devices
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- 238000003491 array Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000002096 quantum dot Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
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- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05758741A EP1723676A4 (en) | 2004-03-10 | 2005-03-09 | Nano-enabled memory devices and anisotropic charge carrying arrays |
JP2007502948A JP4871255B2 (en) | 2004-03-10 | 2005-03-09 | Nano-capable memory devices and anisotropic charge transport arrays |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/796,413 US20050202615A1 (en) | 2004-03-10 | 2004-03-10 | Nano-enabled memory devices and anisotropic charge carrying arrays |
US10/796,413 | 2004-03-10 | ||
US96297204A | 2004-10-12 | 2004-10-12 | |
US10/962,972 | 2004-10-12 | ||
US11/018,572 | 2004-12-21 | ||
US11/018,572 US7595528B2 (en) | 2004-03-10 | 2004-12-21 | Nano-enabled memory devices and anisotropic charge carrying arrays |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005089165A2 WO2005089165A2 (en) | 2005-09-29 |
WO2005089165A3 true WO2005089165A3 (en) | 2006-05-04 |
Family
ID=34994177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/007709 WO2005089165A2 (en) | 2004-03-10 | 2005-03-09 | Nano-enabled memory devices and anisotropic charge carrying arrays |
Country Status (3)
Country | Link |
---|---|
US (3) | US7382017B2 (en) |
EP (1) | EP1723676A4 (en) |
WO (1) | WO2005089165A2 (en) |
Cited By (4)
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US9102521B2 (en) | 2006-06-12 | 2015-08-11 | President And Fellows Of Harvard College | Nanosensors and related technologies |
US9297796B2 (en) | 2009-09-24 | 2016-03-29 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
US9390951B2 (en) | 2009-05-26 | 2016-07-12 | Sharp Kabushiki Kaisha | Methods and systems for electric field deposition of nanowires and other devices |
US9535063B2 (en) | 2006-11-22 | 2017-01-03 | President And Fellows Of Harvard College | High-sensitivity nanoscale wire sensors |
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TWI292583B (en) | 2000-08-22 | 2008-01-11 | Harvard College | Doped elongated semiconductor articles, growing such articles, devices including such articles and fabicating such devices |
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US8518304B1 (en) | 2003-03-31 | 2013-08-27 | The Research Foundation Of State University Of New York | Nano-structure enhancements for anisotropic conductive material and thermal interposers |
KR100558003B1 (en) * | 2003-09-26 | 2006-03-06 | 삼성전자주식회사 | Nonvolatile memory cell employing a plurality of dielectric nanoclusters and method of fabricating the same |
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US9196615B2 (en) | 2005-05-09 | 2015-11-24 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7782650B2 (en) | 2005-05-09 | 2010-08-24 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US9911743B2 (en) | 2005-05-09 | 2018-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8013363B2 (en) | 2005-05-09 | 2011-09-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8217490B2 (en) | 2005-05-09 | 2012-07-10 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8513768B2 (en) | 2005-05-09 | 2013-08-20 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US20100227382A1 (en) | 2005-05-25 | 2010-09-09 | President And Fellows Of Harvard College | Nanoscale sensors |
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US7790560B2 (en) * | 2007-03-12 | 2010-09-07 | Board Of Regents Of The Nevada System Of Higher Education | Construction of flash memory chips and circuits from ordered nanoparticles |
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US8298890B1 (en) | 2009-09-03 | 2012-10-30 | Intermolecular, Inc. | Charge blocking layers for nonvolatile memories |
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Also Published As
Publication number | Publication date |
---|---|
US20070247904A1 (en) | 2007-10-25 |
WO2005089165A2 (en) | 2005-09-29 |
EP1723676A4 (en) | 2009-04-15 |
US7382017B2 (en) | 2008-06-03 |
US20080026532A1 (en) | 2008-01-31 |
US20070187768A1 (en) | 2007-08-16 |
EP1723676A2 (en) | 2006-11-22 |
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