WO2005094404A2 - Semiconductor manufacturing gas flow divider system and method - Google Patents
Semiconductor manufacturing gas flow divider system and method Download PDFInfo
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- WO2005094404A2 WO2005094404A2 PCT/US2005/002783 US2005002783W WO2005094404A2 WO 2005094404 A2 WO2005094404 A2 WO 2005094404A2 US 2005002783 W US2005002783 W US 2005002783W WO 2005094404 A2 WO2005094404 A2 WO 2005094404A2
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- Prior art keywords
- flow
- ratio
- measurements
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
- G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
- G05D7/0664—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a plurality of diverging flows from a single flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0324—With control of flow by a condition or characteristic of a fluid
- Y10T137/0363—For producing proportionate flow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2514—Self-proportioning flow systems
- Y10T137/2521—Flow comparison or differential response
- Y10T137/2524—Flow dividers [e.g., reversely acting controls]
Definitions
- wafer manufacturing facilities are commonly organized to include areas in which chemical vapor deposition, plasma deposition, plasma etching, sputtering and other similar gas manufacturing processes are carried out.
- the processing tools such as chemical vapor deposition reactors, vacuum sputtering machines, plasma etchers or plasma enhanced chemical vapor deposition, must be supplied with various process gases. Pure gases must be supplied to the tools in precisely metered quantities.
- the gases are stored in tanks, which are connected via piping or conduit to a gas box.
- the gas box delivers precisely metered quantities of pure inert or reactant gases from the tanks of the manufacturing facility to a process tool.
- the gas box, or gas metering system includes a plurality of gas paths having gas metering units, such as valves, pressure regulators and transducers, mass flow controllers and filters/purifiers. Each gas path has its own inlet for connection to separate sources of gas, but all of the gas paths converge into a single outlet for connection to the process tool.
- Various semiconductor manufacturing processes such as low or atmospheric pressure chemical-vapor deposition, etching, epitaxy, utilize a showerhead within a process chamber for evenly distributing process gasses over a semiconductor wafer being processed within the process chamber.
- the showerhead may comprise a single zone, or may comprise two or more zones.
- Examples of multi-zone showerheads include, but are not limited to, those shown in U.S. patent number 5,453,124 to Moslehi et al., U.S. patent number 5,624,498 to Lee et al, U.S. patent number 5,976,261 to Moslehi et al., U.S. patent number 6,251,187 to Li et al., U.S. patent number 6,302,964 to Umotoy et al., and U.S. patent number 6,676,760 to ? ??holodenko et al.
- flow dividing systems are used. Examples of flow dividing systems include, but are not limited to, those shown in U.S. patent number 4,369,031 to Goldman et al, U.S. patent number 6,333,272 to McMillin et al., U.S. patent number 6,418,954 to Taylor et al., and published U.S. patent application number 2003/0130807.
- the flow dividing system and method will incorporate in-situ process (wafer uniformity) monitoring to instantly adjust, if necessary, the flow ratios produced by the flow dividing system and method, and correct semiconductor wafer non-uniformity in real time.
- in-situ process wafer uniformity
- the present disclosure provides a system for dividing a single mass flow into two or more secondary mass flows of desired ratios.
- the system includes an inlet for receiving the single mass flow and at least two secondary flow lines connected to the inlet.
- the system also includes an input device for receiving at least one desired ratio of flow (i.e., a set point), at least one in-situ process monitor providing measurements of products (e.g., thin film measurements of semiconductor wafers) produced by each of the flows lines, and a controller connected to the input device and the in-situ process monitor.
- the controller is programmed to receive the desired ratio of flow through the input device, receive the product measurements from the in-situ process monitor, and calculate a corrected ratio of flow based upon the desired ratio of flow and the product measurements.
- the system includes separate process chambers connected to each flow line, and each process chamber includes at least one of the in-situ process monitors for providing measurements of semiconductor wafers within each process chamber.
- the system includes a single process chamber connected to all of the flow lines, and a semiconductor wafer positioned in the process chamber is divided into zones corresponding to the flow lines.
- the flow lines are connected to a showerhead of the process chamber, and the process chamber includes at least one of the in-situ process monitors for providing measurements of each of the zones of the semiconductor wafer within the process chamber.
- the system provides real time corrections for semiconductor wafer processing inconsistencies.
- the system can divide a single flow of process gases among separate process chambers or among separate portions of a single process chamber, and incorporates in-situ process (wafer uniformity) monitoring to instantly adjust, if necessary, the flow ratios produced by the flow dividing system to correct semiconductor wafer non-uniformity in real time.
- the in-situ process monitor comprises a differential sensor.
- the present disclosure therefore, utilizes sensors that require only relative calibration and avoids a need for absolute calibration, which is tedious, expensive and often unreliable.
- FIG. 1 is a schematic illustration of a flow dividing system constructed in accordance with the present disclosure, and shown connected between a gas metering box and a showerhead of a single process chamber;
- Fig. 2 is a flow chart of a method for dividing flow for the system of Fig. 1;
- FIG. 3 is a schematic illustration of the flow divider system of Fig. 1 shown connected between a gas metering box and two process chambers.
- the present disclosure provides a flow divider system 10 and method 12 for dividing a single flow of gas (also referred to as mass flow) into a desired ratio of two or more flows.
- the system 10 and method 12 are particularly intended for use with gas metering systems for delivering contaminant-free, precisely metered quantities of process gases to semiconductor process chambers.
- the presently disclosed system 10 and method 12 incorporate in-situ process (wafer uniforaiity) monitoring to instantly adjust, if necessary, the flow ratios to correct semiconductor wafer non-uniformity in real time.
- FIG. 1 is a schematic illustration of an exemplary embodiment of the flow dividing system 10 shown comiected between an exemplary embodiment of a gas metering box 110 and an exemplary embodiment of a showerhead 107 of a single process chamber 106, which is shown holding a semiconductor wafer 200 for processing.
- the gas metering box 110 receives multiple gases, including for example both process gases and a purge gas, from gas supplies (e.g., gas tanks) 104a, 104b, 104c, 104d (while four tanks are shown, the system can include more or less than four tanks, as desired), for example, and then combines and precisely meters the gases to the flow dividing system 10.
- gas supplies e.g., gas tanks
- 104a, 104b, 104c, 104d while four tanks are shown, the system can include more or less than four tanks, as desired
- the gas box 110 has a plurality of gas sticks 112a, 112b, 112c, 112d (while four sticks are shown, the gas box can include more or less than four).
- Each stick includes, for example, a mass flow controller (MFC) 114, a valve 116 positioned before the MFC and a valve 118 positioned after the MFC.
- MFC mass flow controller
- the gas sticks 112a, 112b, 112c, 112d are separately connected to the gas sources 104a, 104b, 104c, 104d and provide controllable gas passageways so that a contaminant-free, precisely metered amount of a gas, or combination of gases, can be supplied from the gas box 110 to the flow divider system 10.
- the sticks 112a, 112b, 112c, 112d can also each be provided with other components for monitoring or controlling gases, such as filters, purifiers, and pressure transducers and controllers.
- the sticks 112a, 112b, 112c, 112d connect together, in an outlet manifold 128 for example, to allow the gas flows from each stick to be mixed if desired prior to leaving the gas box.
- a vacuum pump 120 is connected to the process chamber 106 through a gate valves 122.
- the vacuum pump 120 draws gas from the gas sources 104a, 104b, 104c, 104d, through the gas box 110 and the flow divider system 10 and into the process chamber 106, so that the gases can be used to process the semiconductor wafer 200.
- the processes carried out by the gases in the process chamber 106 can include, but are not limited to, chemical vapor deposition, plasma deposition, plasma etching, and sputtering.
- the processes may cause layers of material to be deposited or removed from a top surface of the wafer 200, or may cause properties (e.g., porosity) of the top surface of the wafer 200 to be changed. These changes to the wafer 200 can be monitored to determine the progress of the desired process or processes caused by the gases.
- the presently disclosed flow divider system 10 includes an inlet line or manifold 13 for receiving the single gas flow from the outlet manifold 128 of the gas box 110, and first and second flow lines 14a, 14b connected to the inlet 13.
- Each line 14a, 14b is provided with a mass flow meter 18a, 18b measuring mass flow t-hrough the line and providing a signal indicative of the measured flow, and a valve 20a, 20b controlling flow through the line based on a signal indicative of a desired flow rate.
- the ratio system 10 also has a input device 22 for receiving a desired flow ratio (either directly from a human operator or indirectly through a wafer processing computer controller), and a controller 24 connected to the flow meters 18a, 18b, the valves 20a, 20b and the input device 22.
- the flow ratio ⁇ is defined herein as the flow Q 2 through the second line 14b divided by the flow Qi through the first line 14a.
- the flow divider system 10 also includes an in-situ process monitor 100 providing measurements of products produced by each of the flows lines 14a, 14b.
- the in-situ process monitor 100 may, for example, provide a measurement of the thickness of a layer of film being deposited or removed from the top surface of the wafer 200.
- the in-situ process monitor 100 may alternatively, for example, provide measurements of properties (e.g., porosity) of the top surface of the wafer 200.
- the measurements provided by the in-situ process monitor 100 are used to determine the progress of the desired process or processes caused by the gases on the wafer 200 within the process chamber 106.
- In-situ process monitors use advanced thin film metrology such as ellipsometry, optical emission spectroscopy (OES) and interferometry to determine properties, such as deposition film thickness of semiconductor wafers.
- the in-situ process monitor 100 used as part of the system 10 of the present disclosure comprises a differential sensor that obtains measurements by monitoring a ratio of reflected light and emitted light from a light source.
- In-situ process monitors are shown, for example, in U.S. Patent No. 5,387,309 to Bobel et al., U.S. Patent No. 6,113,733 to Eriguchi et al., U.S. Patent No. 6,117,348 to Peng et al., U.S. Patent No. 6,278,809 to Johnson et al., U.S. Patent No. 6,563,578 to Halliyal et al, and U.S. Patent No. 6,633,391 to Oluseyi et al., all of which are incorporated herein by reference. In-situ process monitors are presently available, for example, from Jobin Yvon, hie.
- the flow lines 14a, 14b of the system 10 are both feed into the showerhead 107 of the process chamber 106.
- the flow Q through the second line 14b therefore affects an outer portion or zone of the wafer 200
- the flow Qi through the first line 14a affects an inner portion or zone of the wafer 200.
- the inner zone of the wafer 200 therefore, corresponds to the first flow line 14a and the outer zone of the wafer 200 corresponds to the second flow line 14b.
- the in-situ process monitor 100 provides at least one measurement Mi from the inner zone of the wafer 200, to indicate the process results of the gas flow through the first flow line 14a.
- the in-situ process monitor 100 also provides at least one measurement M from the outer zone of the wafer 200, to indicate the process results of the gas flow through the second flow line 14b.
- the controller 24 is programmed to receive the desired ratio of flow through the input device 22, as shown at 30, receive the signals indicative of measured flow from the flow meters 18a, 18b, as shown at 32, calculate an actual ratio of flow through the flow lines 14a, 14b based upon the measured flow, as shown at 34, and compare the actual ratio to a "corrected" ratio of flow, as shown at 36.
- the controller 24 is also programmed to calculate the desired flow through at least one of the flow lines 14a, 14b if the actual ratio is unequal to the corrected ratio, as shown at 38, and provide an "adjustment" signal indicative of the desired flow to at least one of the valves 20a, 20b, as shown at 40.
- the controller 24, therefore, adjusts flow through at least one of the flow lines 14a, 14b until the actual ratio of flow through the lines equals the corrected ratio of flow.
- the controller 24 is also programmed to receive the measurements Mi and M 2 from the in-situ process monitor 100, as shown at 50 of Fig. 2, and compare the measurements Mi and M 2 as shown at 52. If the measurements Mi and M 2 are equal, indicating that the flows Qi and Q 2 are producing equal process results on the inner and the out zones of the wafer 200, then the controller 24 is programmed to calculate a corrected ratio of flow equal to the desired ratio of flow, as shown at 54. In other words,' no corrections are required since the flows Qi and Q 2 are not producing unequal process results (e.g., unequal film thicl iess on the inner and the out zones of the wafer 200) and the system 10 is operating as desired.
- the controller 24 is programmed to calculate a corrected ratio of flow, as shown at 56.
- the corrected ratio of flow is equal to the desired ratio of flow multiplied by the process uniformity error ⁇ m .
- the corrected ratio of flow can be calculated ( ⁇ m ), wherein/is a function that is determined using a model-based approach based upon the actual physical system used.
- the controller 24 is programmed to provide an "initial" signal to the valve 20a of the first line 14a indicative of a first desired flow, calculate a second desired flow if the actual flow ratio is unequal to the desired flow ratio, and provide an "adjustment" signal to the valve 20b of the second flow line 14b indicative of the second desired flow.
- the adjustment signal N c2 is calculated using the following equation:
- Nc2 K pa ( ⁇ - ⁇ sp ) + K ( ⁇ - ⁇ sp ) dt
- N c is the command from the controller 24 to the second valve 20b
- K pa is a proportional gain for the ratio control
- Kj a is an integral gain for the ratio control
- ⁇ is the measured flow ratio
- ⁇ sp is the ratio set point or desired flow ratio.
- the valve 20a of the first line 14a acts as a fixed orifice
- the valve 20b of the second line 14b acts as a variable control valve.
- the controller 24 is programmed to cause the valve 20a of the first line 14a to fully open, such that the overall pressure drop across the system 10 is minimized.
- Examples of suitable mass flow meters 18a, 18b for use with the ratio system 10 of the present disclosure are thermally based Mass-Flo ® brand controllers available from the assignee of the present disclosure, ?MKS histruments of Andover, MA (http://www.mksinst.com).
- Suitable valves 20a, 20b are also available from the assignee.
- the valves 20a, 20b are non-linear and have a narrow controllable range.
- the thermal flow meters 18a, 18b are the limiting factor in determining a control range provided by the system 10, since the flow meters are not nonnally reliable below five percent of the maximum sensor range (e.g., a 2,000 seem thermal flow meter is not reliable below 100 seem).
- the mass flow ratio system 10 can be provided with more than two flow lines 14, with each additional flow line having a valve 20 and a flow meter 18 connected to the controller 24.
- a mass flow controller can be used as the mass flow meter and the valve of each line.
- the disclosed ratio system 10 can be provided as a modular unit for quick and easy assembly between a gas box and a process chamber(s). In such a case, a shut-off valve or suitable comiector 150 might be provided between the inlet manifold 13 of the ratio system 10 and the outlet manifold 128 of the gas box 110, as shown in Fig. 1. '
- Embodiments of a system and a method for dividing flow according to the present invention can further include a pressure sensor for the inlet 13 and/or outlets of the system 10.
- the inlet pressure and or the outlet pressure measurement provided by the pressure sensor(s) is used by the controller 24 to not only control the ratio ⁇ of the flows, but also control the inlet pressure and/or the outlet pressures.
- Adding a pressure control feature has a number of ancillary benefits, including improving the system 10 performance and reducing disturbances to devices upstream or downstream of the system 10. By operating the system 10 at the maximum allowable pressures, the need for factors of safety in the ratio control system can be removed or reduced. In addition, controlling the pressure drop across the valves 20a, 20b improves valve performance and makes valve setup, matching, and tuning more simple.
- the present disclosure is intended, therefore, to include a system and a method for dividing flow, with any added pressure control features.
- the present disclosure is intended to include the flow divider system 10 plus a pressure sensor(s) in the inlet and/or the outlets of the system.
- the present disclosure is also intended to include a method 12 of dividing flow plus measuring pressure(s) in the inlet and/or the outlets. In effect, the present application is meant to include any control methodologies using pressure measurements for the claimed flow dividing system and method.
- the controller 24 is programmed to take three inputs: the flow Q 2 through the second line 14b; the flow Qi through the first line 14a; and a measured pressure Pj n at the inlet 13 as provided by the pressure sensor.
- the controller 24 is programmed to issue commands to both of the first and the second valves 20a, 20b dynamically, instead of just controlling one valve at a time.
- the "fixed valve” is mostly open, while the ratio is determined by controlling the other valve between 10% and 50% of a control range of the valve.
- the fixed valve is set to control the inlet pressure, and the other valve is used to control the flow ratio.
- N c ⁇ Kp P (P in - P t ) + K ip - P t )dt
- Nc2 K p ⁇ ( ⁇ - ⁇ sp ) + Ki J( ⁇ - sp ) ',dt
- N c ⁇ is the command from the controller 24 to the first valve 20a
- N c2 is the command to the second valve 20b
- K pp is a proportional gain for pressure control
- Ki P is an integral gain for the pressure control
- K p ⁇ is a proportional gain for the ratio control
- Ki ⁇ is an integral gain for the ratio control
- ⁇ is the measured flow ratio
- ⁇ sp is the ratio set point or desired flow ratio
- Pi n is the measured inlet pressure
- P t is an operating pressure threshold (or a desired pressure).
- control system and method is described as a proportional-plus- integral (PI) type control system and method, it should be appreciated that other types of control systems and methods can be used, such as proportional, integral, proportional- plus-derivative (PD), and proportional-plus-integral-plus-derivative (PID) types of control systems and methods.
- PI proportional-plus- integral
- PD proportional-plus-derivative
- PID proportional-plus-integral-plus-derivative
- the system 10 includes separate process chambers 106, 108 connected to each flow line 14a, 14b, respectively, and each process chamber 106, 108 includes at least one of the in-situ process monitors 100 for providing measurements of semiconductor wafers 200 within each process chamber.
- the system 10 provides real time corrections for semiconductor wafer processing inconsistencies.
- the system 10 can divide a single flow of process gases among separate process chambers 106, 108 or among separate portions of a single process chamber 106, and incorporates in-situ process (wafer uniformity) monitoring to instantly adjust, if necessary, the flow ratios produced by the flow dividing system 10 to correct semiconductor wafer non-uniformity in real time. Since the in-situ process monitor 100 comprises a differential sensor, in-situ process monitor requires only relative calibration and avoids a need for absolute calibration, which is tedious, expensive and often unreliable.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020067020209A KR101113776B1 (en) | 2004-03-09 | 2005-02-01 | Semiconductor manufacturing gas flow divider system and method |
JP2007502806A JP5300261B2 (en) | 2004-03-09 | 2005-02-01 | Gas flow splitting system and method for semiconductor manufacturing |
DE112005000485T DE112005000485T5 (en) | 2004-03-09 | 2005-02-01 | System and method for dividing a gas flow in semiconductor manufacturing |
GB0618943A GB2428823B (en) | 2004-03-09 | 2005-02-01 | Semiconductor manufacturing gas flow divider system and method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/796,693 | 2004-03-09 | ||
US10/796,693 US7072743B2 (en) | 2004-03-09 | 2004-03-09 | Semiconductor manufacturing gas flow divider system and method |
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WO2005094404A2 true WO2005094404A2 (en) | 2005-10-13 |
WO2005094404A3 WO2005094404A3 (en) | 2006-09-21 |
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PCT/US2005/002783 WO2005094404A2 (en) | 2004-03-09 | 2005-02-01 | Semiconductor manufacturing gas flow divider system and method |
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US (1) | US7072743B2 (en) |
JP (2) | JP5300261B2 (en) |
KR (1) | KR101113776B1 (en) |
CN (1) | CN1938661A (en) |
DE (1) | DE112005000485T5 (en) |
GB (1) | GB2428823B (en) |
WO (1) | WO2005094404A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9127361B2 (en) | 2009-12-07 | 2015-09-08 | Mks Instruments, Inc. | Methods of and apparatus for controlling pressure in multiple zones of a process tool |
Families Citing this family (268)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3985899B2 (en) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | Substrate processing equipment |
US7628861B2 (en) * | 2004-12-17 | 2009-12-08 | Mks Instruments, Inc. | Pulsed mass flow delivery system and method |
US7628860B2 (en) * | 2004-04-12 | 2009-12-08 | Mks Instruments, Inc. | Pulsed mass flow delivery system and method |
US7621290B2 (en) * | 2005-04-21 | 2009-11-24 | Mks Instruments, Inc. | Gas delivery method and system including a flow ratio controller using antisymmetric optimal control |
US9405298B2 (en) * | 2006-11-20 | 2016-08-02 | Applied Materials, Inc. | System and method to divide fluid flow in a predetermined ratio |
US7706925B2 (en) * | 2007-01-10 | 2010-04-27 | Mks Instruments, Inc. | Integrated pressure and flow ratio control system |
US7846497B2 (en) * | 2007-02-26 | 2010-12-07 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
US8074677B2 (en) * | 2007-02-26 | 2011-12-13 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
US7775236B2 (en) * | 2007-02-26 | 2010-08-17 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
US20100084023A1 (en) * | 2008-10-07 | 2010-04-08 | Chris Melcer | Flow control module for a fluid delivery system |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8771537B2 (en) * | 2009-08-20 | 2014-07-08 | Tokyo Electron Limited | Plasma treatment device and plasma treatment method |
CN102053617B (en) * | 2009-10-28 | 2013-11-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | On-line calibrating method for FRC (Flow Ratio Controller), system and plasma treatment equipment |
WO2011085064A2 (en) * | 2010-01-08 | 2011-07-14 | Applied Materials, Inc. | N-channel flow ratio controller calibration |
JP5562712B2 (en) * | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | Gas supply equipment for semiconductor manufacturing equipment |
CN103003924B (en) * | 2010-06-28 | 2015-07-08 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
JP5696931B2 (en) * | 2010-08-06 | 2015-04-08 | 日立金属株式会社 | Shunt control device |
JP5528374B2 (en) * | 2011-03-03 | 2014-06-25 | 東京エレクトロン株式会社 | Gas decompression supply device, cylinder cabinet including the same, valve box, and substrate processing apparatus |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
JP5739261B2 (en) * | 2011-07-28 | 2015-06-24 | 株式会社堀場エステック | Gas supply system |
US8849466B2 (en) | 2011-10-04 | 2014-09-30 | Mks Instruments, Inc. | Method of and apparatus for multiple channel flow ratio controller system |
US9004107B2 (en) * | 2012-08-21 | 2015-04-14 | Applied Materials, Inc. | Methods and apparatus for enhanced gas flow rate control |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
JP5616416B2 (en) * | 2012-11-02 | 2014-10-29 | 株式会社フジキン | Integrated gas supply device |
KR102064552B1 (en) | 2013-03-26 | 2020-01-10 | 삼성전자주식회사 | Substrate treating apparatus |
US9632516B2 (en) * | 2013-12-19 | 2017-04-25 | Tawan Semiconductor Manufacturing Co., Ltd | Gas-supply system and method |
US10161060B2 (en) | 2013-12-19 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas-supply system and method |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9724663B2 (en) | 2014-08-05 | 2017-08-08 | Board Of Regents, The University Of Texas System | Systems and methods of continuously producing encapsulated liquid water |
US20160041089A1 (en) * | 2014-08-08 | 2016-02-11 | Minna Hovinen | Systems and methods utilizing long wavelength electromagnetic radiation for feature definition |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
JP6417999B2 (en) * | 2015-02-19 | 2018-11-07 | 東京エレクトロン株式会社 | Treatment liquid supply apparatus, treatment liquid supply method, and storage medium |
KR101652469B1 (en) | 2015-02-27 | 2016-08-30 | 주식회사 유진테크 | Method for multi-supplying gas and apparatus for multi-supplying gas |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10957561B2 (en) * | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
US9620376B2 (en) * | 2015-08-19 | 2017-04-11 | Lam Research Corporation | Self limiting lateral atomic layer etch |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US20180046206A1 (en) * | 2016-08-13 | 2018-02-15 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a process chamber |
US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
KR102597978B1 (en) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | Storage device for storing wafer cassettes for use with batch furnaces |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (en) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | Method for depositing ruthenium-containing films on substrates by cyclical deposition processes |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
TW202344708A (en) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TWI816783B (en) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
TW202013553A (en) | 2018-06-04 | 2020-04-01 | 荷蘭商Asm 智慧財產控股公司 | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
JP2021529254A (en) | 2018-06-27 | 2021-10-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
KR20210027265A (en) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | Periodic deposition method for forming metal-containing material and film and structure comprising metal-containing material |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) * | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
CN111276421A (en) * | 2018-12-05 | 2020-06-12 | 北京七星华创流量计有限公司 | Flow distribution device, air inlet system and reaction chamber |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (en) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming device structure using selective deposition of gallium nitride, and system for the same |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
JP2020136677A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic accumulation method for filing concave part formed inside front surface of base material, and device |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200108248A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system including a gas detector |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
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JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
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KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
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CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
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USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202128273A (en) * | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
JP7296854B2 (en) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | Gas supply method and substrate processing apparatus |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
CN112992667A (en) | 2019-12-17 | 2021-06-18 | Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210117157A (en) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for Fabricating Layer Structure Having Target Topological Profile |
US11486927B2 (en) * | 2020-04-02 | 2022-11-01 | Applied Materials, Inc. | Bode fingerprinting for characterizations and failure detections in processing chamber |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
TW202219628A (en) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
TW202235675A (en) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Injector, and substrate processing apparatus |
CN114639631A (en) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | Fixing device for measuring jumping and swinging |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
US11940307B2 (en) * | 2021-06-08 | 2024-03-26 | Mks Instruments, Inc. | Methods and apparatus for pressure based mass flow ratio control |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN113944876B (en) * | 2021-10-31 | 2023-05-05 | 东风商用车有限公司 | Multi-gas cylinder gas supply system |
US11940819B1 (en) * | 2023-01-20 | 2024-03-26 | Applied Materials, Inc. | Mass flow controller based fast gas exchange |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5040470A (en) * | 1988-03-25 | 1991-08-20 | Shell Western E&P Inc. | Steam generating system with NOx reduction |
US5289678A (en) * | 1992-11-25 | 1994-03-01 | Ford Motor Company | Apparatus and method of on-board catalytic converter efficiency monitoring |
US5719495A (en) * | 1990-12-31 | 1998-02-17 | Texas Instruments Incorporated | Apparatus for semiconductor device fabrication diagnosis and prognosis |
US6813534B2 (en) * | 1998-07-10 | 2004-11-02 | Zhifeng Sui | Endpoint detection in substrate fabrication processes |
US6829056B1 (en) * | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4369031A (en) * | 1981-09-15 | 1983-01-18 | Thermco Products Corporation | Gas control system for chemical vapor deposition system |
JPH02229788A (en) * | 1989-02-28 | 1990-09-12 | Sumitomo Metal Ind Ltd | Vapor phase growth device |
JPH03281780A (en) * | 1990-03-30 | 1991-12-12 | Hitachi Ltd | Cvd device |
DE4017440C2 (en) * | 1990-05-30 | 1994-02-10 | Fraunhofer Ges Forschung | Method for measuring the layer thickness and the refractive index of a thin layer on a substrate and device for carrying out the method |
US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
KR950020993A (en) * | 1993-12-22 | 1995-07-26 | 김광호 | Semiconductor manufacturing device |
JPH08203694A (en) * | 1995-01-30 | 1996-08-09 | Hitachi Ltd | Plasma treatment device |
JP3624476B2 (en) * | 1995-07-17 | 2005-03-02 | セイコーエプソン株式会社 | Manufacturing method of semiconductor laser device |
KR100201386B1 (en) * | 1995-10-28 | 1999-06-15 | 구본준 | Reaction gas injecting apparatus of chemical vapor deposition apparatus |
US5772771A (en) * | 1995-12-13 | 1998-06-30 | Applied Materials, Inc. | Deposition chamber for improved deposition thickness uniformity |
US5976261A (en) * | 1996-07-11 | 1999-11-02 | Cvc Products, Inc. | Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment |
US6113733A (en) * | 1996-11-08 | 2000-09-05 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device |
US6278809B1 (en) * | 1997-05-30 | 2001-08-21 | Ion Optics, Inc. | Fiber optic reflectance apparatus for in situ characterization of thin films |
US6117348A (en) * | 1998-06-03 | 2000-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd | Real time monitoring of plasma etching process |
US6302964B1 (en) * | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
JP3787444B2 (en) * | 1998-10-28 | 2006-06-21 | キヤノン株式会社 | Method and apparatus for forming semiconductor thin film |
US6333272B1 (en) * | 2000-10-06 | 2001-12-25 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6633391B1 (en) * | 2000-11-07 | 2003-10-14 | Applied Materials, Inc | Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy |
US6563578B2 (en) * | 2001-04-02 | 2003-05-13 | Advanced Micro Devices, Inc. | In-situ thickness measurement for use in semiconductor processing |
US6418954B1 (en) * | 2001-04-17 | 2002-07-16 | Mks Instruments, Inc. | System and method for dividing flow |
US6676760B2 (en) * | 2001-08-16 | 2004-01-13 | Appiled Materials, Inc. | Process chamber having multiple gas distributors and method |
US6766260B2 (en) * | 2002-01-04 | 2004-07-20 | Mks Instruments, Inc. | Mass flow ratio system and method |
US6829456B2 (en) * | 2002-05-10 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Printer calibration system and method |
JP3856730B2 (en) * | 2002-06-03 | 2006-12-13 | 東京エレクトロン株式会社 | A gas diversion supply method to a chamber from a gas supply facility provided with a flow rate control device. |
-
2004
- 2004-03-09 US US10/796,693 patent/US7072743B2/en active Active
-
2005
- 2005-02-01 DE DE112005000485T patent/DE112005000485T5/en not_active Ceased
- 2005-02-01 WO PCT/US2005/002783 patent/WO2005094404A2/en active Application Filing
- 2005-02-01 KR KR1020067020209A patent/KR101113776B1/en active IP Right Grant
- 2005-02-01 GB GB0618943A patent/GB2428823B/en not_active Expired - Fee Related
- 2005-02-01 JP JP2007502806A patent/JP5300261B2/en not_active Expired - Fee Related
- 2005-02-01 CN CNA2005800102004A patent/CN1938661A/en active Pending
-
2012
- 2012-04-16 JP JP2012092861A patent/JP2012169651A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5040470A (en) * | 1988-03-25 | 1991-08-20 | Shell Western E&P Inc. | Steam generating system with NOx reduction |
US5719495A (en) * | 1990-12-31 | 1998-02-17 | Texas Instruments Incorporated | Apparatus for semiconductor device fabrication diagnosis and prognosis |
US5289678A (en) * | 1992-11-25 | 1994-03-01 | Ford Motor Company | Apparatus and method of on-board catalytic converter efficiency monitoring |
US6813534B2 (en) * | 1998-07-10 | 2004-11-02 | Zhifeng Sui | Endpoint detection in substrate fabrication processes |
US6829056B1 (en) * | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9127361B2 (en) | 2009-12-07 | 2015-09-08 | Mks Instruments, Inc. | Methods of and apparatus for controlling pressure in multiple zones of a process tool |
Also Published As
Publication number | Publication date |
---|---|
CN1938661A (en) | 2007-03-28 |
KR20070011342A (en) | 2007-01-24 |
WO2005094404A3 (en) | 2006-09-21 |
JP2007528603A (en) | 2007-10-11 |
GB0618943D0 (en) | 2006-11-08 |
US7072743B2 (en) | 2006-07-04 |
JP2012169651A (en) | 2012-09-06 |
KR101113776B1 (en) | 2012-02-27 |
JP5300261B2 (en) | 2013-09-25 |
GB2428823A (en) | 2007-02-07 |
US20050199342A1 (en) | 2005-09-15 |
DE112005000485T5 (en) | 2007-01-25 |
GB2428823B (en) | 2008-08-06 |
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