WO2005097396A1 - 接合方法及びその装置 - Google Patents

接合方法及びその装置 Download PDF

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Publication number
WO2005097396A1
WO2005097396A1 PCT/JP2005/006740 JP2005006740W WO2005097396A1 WO 2005097396 A1 WO2005097396 A1 WO 2005097396A1 JP 2005006740 W JP2005006740 W JP 2005006740W WO 2005097396 A1 WO2005097396 A1 WO 2005097396A1
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WO
WIPO (PCT)
Prior art keywords
bonding
joining
roughness
surface treatment
atmospheric pressure
Prior art date
Application number
PCT/JP2005/006740
Other languages
English (en)
French (fr)
Inventor
Tatsuo Sasaoka
Satoshi Horie
Isamu Aokura
Yoshihiko Yagi
Kazuki Fukada
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Priority to JP2006512095A priority Critical patent/JP4870557B2/ja
Priority to US10/599,638 priority patent/US7659148B2/en
Publication of WO2005097396A1 publication Critical patent/WO2005097396A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/203—Fluxing, i.e. applying flux onto surfaces
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0373—Conductors having a fine structure, e.g. providing a plurality of contact points with a structured tool
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1007—Running or continuous length work
    • Y10T156/1023—Surface deformation only [e.g., embossing]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/14—Surface bonding means and/or assembly means with shaping, scarifying, or cleaning joining surface only

Definitions

  • the present invention relates to a bonding method and an apparatus applied when, for example, an electronic component is mounted on a substrate by directly bonding an electrode of an electronic component to an electrode formed on the substrate.
  • each workpiece is arranged in a vacuum chamber, and the surface of the workpiece is irradiated with energy waves in a reduced-pressure gas atmosphere for cleaning.
  • a method is known in which a vacuum or an inert gas or a gas which does not react with a material to be bonded is faced to each other and pressure-bonded in a sealed chamber (see Patent Document 1).
  • Patent Document 1 JP 2001-351892 A
  • Patent Document 2 JP 2003-197673
  • the bonding method according to the related art requires at least one vacuum chamber or one chamber for creating an inert gas atmosphere in the transfer and bonding steps from the cleaning step.
  • a series of vacuum equipment such as vacuum pump, valve, control system Equipment is required, and there is a problem that the equipment cost is higher than the joining method using ultrasonic heating bonding or paste curing.
  • the equipment cost is higher than the joining method using ultrasonic heating bonding or paste curing.
  • an object of the present invention is to provide a bonding method and a bonding apparatus capable of performing a process up to a bonding process at a room temperature in the air at room temperature and a surface treatment force for removing at least bonding harmful substances.
  • a first invention of the present application for achieving the above object is a bonding method of bonding a plurality of objects between respective bonding surfaces after performing surface treatment on a bonding surface of the plurality of objects.
  • the surface of one of the bonding surfaces to be bonded is processed to a predetermined roughness in the surface roughness control step, so that fine peaks are formed at fine intervals on the one of the bonding surfaces.
  • the layer of bonding inhibitory substances such as oxides and adsorbents present on the surface of the bonding surface is sheared due to the peak, and almost The evenly distributed or regularly arranged peaks and the other joint surface are metal-joined, and the joint surfaces are joined.
  • the required joint strength depends on the total joint area of the joints, which is the sum of the areas where the fine peaks formed on one of the joint surfaces join the other joint surface in a point-like manner.
  • Shape the roughness of one joint surface By optimally selecting the shape and size of the peak to be formed and the amount of indentation when one of the bonding surfaces formed to a predetermined roughness in the bonding process is brought into contact with the other bonding surface, the desired bonding can be achieved. Strength is obtained.
  • a surface treatment step for removing the bonding inhibitor and adhering the effective bonding substance to the bonding surface is performed, the bonding is performed in the presence of the bonding effective substance without the bonding inhibitor, so that the peak is obtained.
  • the bonding between the and the other bonding surface is performed more reliably by the function of a bonding effective substance without disturbing the bonding inhibitor.
  • each step can be performed in a state where the surface is cleaned, and the surface after the surface cleaning step can be bonded in an atmospheric pressure atmosphere by a modification in which a bonding effective substance adheres in the presence of the re-adsorbed substance.
  • the processing is controlled to the corresponding surface roughness. It is possible to apply a method of transferring irregularities to one joining surface joined by the formed concavo-convex forming member, a method of atmospheric pressure plasma treatment, or a method of blast treatment for spraying fine particles.
  • the bonding step a method of irradiating the bonding surface with energetic particles or energy waves at atmospheric pressure is preferable, and the bonding step can be performed under atmospheric pressure and at room temperature. Specifically, irradiation of ultraviolet rays or irradiation of a product by atmospheric pressure plasma can be applied.
  • This surface treatment step is performed in parallel with the bonding step, thereby removing a bonding inhibitor and removing a bonding effective substance. Bonding can be performed immediately after the adhesion is made.
  • the bonding apparatus is a bonding apparatus for bonding a plurality of workpieces between respective bonding surfaces after surface-treating the bonding surfaces of the plurality of workpieces.
  • a surface treatment means for removing a bonding inhibitor and attaching an effective bonding material to a bonding surface controlled to a predetermined roughness on one side, and bonding a plurality of workpieces by bringing the respective bonding surfaces into contact with each other
  • joining means for performing the above is a bonding apparatus for bonding a plurality of workpieces between respective bonding surfaces after surface-treating the bonding surfaces of the plurality of workpieces.
  • a surface treatment means for removing a bonding inhibitor and attaching an effective bonding material to a bonding surface controlled to a predetermined roughness on one side, and bonding a plurality of workpieces by bringing the respective bonding surfaces into contact with each other
  • joining means for performing the above.
  • the surface of one of the bonding surfaces is controlled to a predetermined roughness, A state in which fine peaks are formed at fine intervals on one bonding surface is obtained, and when this bonding surface is pressed against the other bonding surface in the bonding process, oxides and adsorption existing on the surface of the bonding surface due to the peaks
  • the layer of the bonding inhibitor such as an object is sheared, and the regularly arranged peaks and the other bonding surface are metal-bonded, and the bonding surfaces are bonded.
  • the required joint strength depends on the total joint area of the joints, which is the sum of the areas where the fine peaks formed on one of the joint surfaces join the other joint surface in a point-like manner.
  • Optimum shape and dimensions of peaks that form roughness on one joint surface, and the amount of indentation when one joint surface formed to a predetermined roughness by the joining means is brought into contact with the other joint surface By selection, a desired bonding strength can be obtained.
  • the joining is performed in the presence of the joining effective substance without the joining inhibiting substance, so that the peak and the other joining substance are joined. Bonding to the surface is made more reliably by the effect of the bonding effective substance without disturbing the bonding inhibitor.
  • a surface treatment means of the above-mentioned bonding apparatus it is more preferable to provide an initial surface cleaning means for removing a bonding inhibitor present on the bonding surface prior to a treatment step by each means, more preferably in a more purified state.
  • Each step can be carried out, and the surface after the surface cleaning step can be bonded in an atmospheric pressure atmosphere by modification in which an effective bonding substance adheres in the presence of the re-adsorbed substance.
  • a surface roughness processing control means for performing processing control to a surface roughness corresponding to a material of a bonding surface
  • the surface roughness processing control means includes a projection and a depression having a predetermined roughness.
  • the surface treatment means preferably irradiates the bonding surface with energetic particles or energy waves at atmospheric pressure, and the bonding can be performed at atmospheric pressure and at room temperature. Specifically, irradiation of ultraviolet rays or irradiation of a product by atmospheric pressure plasma can be applied.
  • the surface cleaning step is performed in parallel with the bonding step to remove or modify the bonding inhibitor. After joining, it can be joined quickly.
  • FIG. 1 is a flowchart showing a procedure of a bonding method according to an embodiment.
  • FIG. 2A to FIG. 2C are schematic diagrams showing a procedure of a surface roughness control step.
  • FIG. 3A to FIG. 3C are schematic diagrams showing a joining step and a surface cleaning step.
  • FIG. 4 is a schematic diagram illustrating surface roughness.
  • FIG. 5A to FIG. 5C are schematic diagrams illustrating joining by a joining surface with controlled surface roughness.
  • FIG. 6A to FIG. 6B are graphs showing the increase and decrease of the bonding inhibitory substance and the graphs of the increase and decrease of the effective bonding substance before and after the main surface treatment.
  • the present embodiment shows an example in which a bump electrode formed on an electrode land formed on an electronic component is bonded to an electrode land formed on a substrate and the electronic component is mounted on the substrate. is there.
  • the bump electrodes may be formed on the electrode lands of the substrate, or may be formed on the electrode lands of the substrate and the electronic components. Since bump electrodes generally have an electrode land thickness of 1 ⁇ m or less, they absorb the warpage of electronic components and substrates, and reliably achieve conduction by bonding multiple electrode lands formed on both sides. For that purpose, it is indispensable as a cushioning material with a height of several to several tens of meters.
  • FIG. 1 shows the procedure of each step of the bonding method according to the present embodiment.
  • Sl shown in FIG. 1, is a step number indicating a process procedure, and corresponds to a number added in the text.
  • an initial cleaning process is performed on the bump electrode lb of the electronic component 1 and the electrode land 2a of the substrate 2 (S1).
  • Initial cleaning is performed in air or vacuum.
  • energy etching by plasma and ion etching by ion beam or Iridaku chemicals are performed.
  • the initial cleaning step it is possible to remove oxidizing substances and adsorbed substances that inhibit the bonding existing on the surfaces of the bump electrode lb and the electrode land 2a, and the metal forming the bump electrode lb and the electrode land 2a can be removed.
  • the initial cleaning step may be omitted in the case where a bonding inhibitor such as Si is not adhered or almost not, and the surface is a bonding surface, and only the main surface treatment described later may be performed.
  • the initially cleaned electronic component 1 is conveyed to a surface treatment stage 4 for performing a surface roughness control step, and the substrate 2 is conveyed to a bonding stage 7 (S2).
  • the surface roughness control step the surface of the bump electrode lb is roughened to a predetermined roughness (S3).
  • the surface roughness control step includes the steps of forming a bumpy plate (roughness forming member) 3 having a roughened surface 3a on the surface thereof at a predetermined roughness, and bump electrodes of an electronic component 1 held on a stage 4.
  • the bump electrode lb is pressed at a predetermined pressure as shown in FIG.
  • the electronic component 1 whose surface roughness has been controlled on the bump electrode lb in the above-described surface roughness processing control step is transported toward the bonding step (S4), and as shown in FIG.
  • the position of the joining tool 6 is controlled so that the bump electrode lb and the electrode land 2a coincide with each other above the bonding stage 7 held by the holding means 6 and holding the substrate 2.
  • a first ultraviolet irradiation device (surface treatment means) 5a irradiates the electronic component 1 with ultraviolet light
  • a second ultraviolet irradiation device (surface treatment means) 5b The force is also applied to the substrate 2 by irradiating ultraviolet rays to remove the bonding inhibitor adhering to the bump electrode lb and the electrode land 2a after the initial cleaning, and to remove the bonding effective substance in the presence of the adsorbed substance adsorbed again.
  • a main surface treatment step (surface treatment step) for adhesion is performed (S5).
  • the bonding tool 6 After performing the main surface treatment step for a predetermined time, the bonding tool 6 is moved down so that the bump electrode lb of the electronic component 1 is pressed against the electrode land 2a of the substrate 2 as shown in FIG. 3B. Then, the bump electrode lb is joined to the electrode land 2a at the convex portion formed on the surface thereof (S6). The details of the joining mechanism will be described later.
  • the bonding tool 6 releases the holding of the electronic component 1 and rises. Therefore, as shown in FIG. 3C, the bump electrode lb is connected to the electrode land 2a.
  • the electronic component 1 is mounted on the board 2 by bonding.
  • the second cleaning step is continued until the bonding step is completed (S7).
  • 02 blowing can be performed to promote removal of the adsorbate from the dissociation due to ultraviolet rays.
  • the bump electrode lb is mainly formed by electrolysis or electroless plating or by a stud bump bonding method. Its surface has ten-point average roughness of micrometer-order undulations, and each undulation has nanometer-order undulations.
  • micrometer-order undulation ten-point average roughness
  • nanometer-order undulation ten-point average roughness
  • large roughness can be measured using a roughness measuring instrument or laser measurement.
  • small roughness is at a level that can be measured with the resolution of an atomic force microscope. As shown in Fig.
  • the peak value when performing a large roughness triangular wave approximation is hi
  • the waveform pitch is bl
  • the small roughness peak value is h2
  • the waveform pitch is b2
  • a general In the case of a bump electrode lb made of a gold (Au) sputtered film, the peak value hi of the large roughness is about submicrometer, and the peak value h2 of the small roughness is about lOnm. In the case of lb, the peak value hi of the large roughness is several micrometers, and the peak value h2 of the small roughness is about 5 Onm.
  • the surface of the bump electrode lb and the surface of the electrode land 2a are adsorbed with oxidized substances or organic substances in the air. Since there is an inhibitory substance G that inhibits bonding, such as the above, bonding does not occur because the metal surfaces do not come into direct contact with each other. When the initial cleaning is performed, the inhibitor G is removed from the metal surface, so that the metal surface easily reacts with other substances. Therefore, when metals are brought into contact with each other, bonding by metal bonding becomes possible.
  • the present invention applies the above-mentioned joining mechanism, and the roughened surface portion 3a of the uneven plate 3 is standardized by large roughness parameters hi and bl so that a stable joined state can be obtained even in a mass production process.
  • Form irregularities As shown in FIG. 2, on the surface of the bump electrode lb against which the rough surface 3a having the irregularities formed at the peak interval bp and the peak height hp is pressed on the uneven plate 3, as shown in FIG. Irregularities are formed in which the number of joints E to the electrode lands 2a is controlled.
  • the ratio of the area (bp) 2 of a square with a side length bp with unit area 1 and E as four vertices is the joint area Sc per unit area and the joint area s (the four vertices of joint area sZ4 per vertex As a minute, the ratio becomes equal to 4 X s Z4), and the following expression (1) holds.
  • the area to be joined of the joint is the net effective joining area s at the joint E.
  • S is the net effective joining area s at the joint E.
  • it includes the effective joint and the non-joint, and apparently means the actual projected total area recognized as the joint.
  • the total joint area So required to obtain a predetermined joint strength can be obtained. What is necessary is just to determine the joint area s or the dimension bp between the joints necessary to obtain the joint.
  • the bonding area s can be determined by selecting numerical values such as the shape and size of one bonding portion of the rough surface portion 3a formed on the uneven plate 3 and the amount of indentation.
  • the rough surface portion 3a of the uneven plate 3 is formed by dry etching, sand blasting, or the like so that the roughness becomes constant.
  • the determination of the peak height hp and the peak interval bp depends on the surface condition, size, and material of the bump electrode lb.
  • the main surface treatment step is provided, and for the purpose of controlling and controlling the chemical state of the metal surface in the atmosphere, the removal of the joining inhibitory substance in the re-adsorbed material F and the effective joining are performed.
  • the substance is attached.
  • ultraviolet light is irradiated from the first ultraviolet irradiation device 5a toward the bump electrode lb forming surface of the electronic component 1, and the second ultraviolet irradiation device is used.
  • Ultraviolet rays are applied from the device 5b to the surface of the substrate 2 on which the electrode lands 2a are formed, and the main surface treatment for removing the bonding inhibitor in the resorbed material F and attaching the bonding effective material is performed by ultraviolet light.
  • the effect of the residual adsorbate mitigates or eliminates the influence of the residual adsorbate, and the bonding is successfully achieved.
  • the effective bonding substance promotes shearing at the joint of the residual adsorbent layer.
  • the surface state of the bonding surface has been modified by the bonding effective material so that the residual adsorbent layer does not disturb the bonding.
  • the electronic component 1 that has been subjected to the initial cleaning step as the preliminary surface treatment is transported onto the surface treatment stage 4 to transfer the irregular shape.
  • the completed electronic component 1 is held by the joining tool 6 and the joining tool 6 is lowered onto the uneven plate 3 with the rough surface 3a facing upward, and the bump electrode lb of the held electronic component 1 is put on the rough surface 3a. Pressing, it is easy to transfer the unevenness to the surface of the bump electrode lb.
  • the concavo-convex shape that is, the rough surface can be directly formed by plasma treatment or blasting. It is also possible to irradiate products such as ions generated by atmospheric pressure plasma described as a means for performing the main surface treatment step.
  • the diffusion rate of the metal can be accelerated, so that the bonding force can be further enhanced.
  • the bump electrode lb formed on the electronic component 1 is subjected to a surface roughness control step! / However, a rough surface is formed on the electrode land 2a on the substrate 2 side. Similar effects can be obtained by performing the processing.
  • the surface of the roughened Au bumps on the electronic component 1 and the Au sputtered electrode on the electronic component 2 are simultaneously treated with a UV lamp to remove bonding inhibitors and adhere effective bonding materials (low-pressure mercury lamp wavelength 185 ⁇ 254Nm, illuminance 20mWZcm 2, irradiation time 90s)
  • the peak of carbon C is low as shown in FIG. 6A, and the peak of oxygen O is high as shown in FIG. 6B.
  • the removal of the fragment C and the increase in the amount of calories due to the attachment of oxygen O allowed the surface state to be improved to be advantageous for bonding, and the above-described good results were obtained.
  • C is a bonding hazardous substance
  • O is a bonding effective substance.
  • the surface roughness is reduced.
  • the control step forms irregularities of a predetermined roughness on one joint surface
  • the second cleaning step removes the re-adsorbed substances adhering to the joint surface, and the irregularities formed joint surface is formed on the other joint surface. Pressing and joining enables bonding at room temperature and in the air, so it is effective for application to electronic component mounting by the flip-chip method.

Abstract

　初期洗浄工程（Ｓ１）により被接合物（１ｂ，２ａ）の表面を洗浄して酸化物や吸着物等の接合阻害物質（Ｇ）の除去を行った後、表面粗さ制御工程（Ｓ３）により一方の接合面（１ｂ）を所定粗さの凹凸を形成し、表面処理工程（Ｓ５）により接合面（１ｂ，２ａ）に付着した再吸着物（Ｆ）の除去を行って凹凸形成した接合面（１ｂ）を他方の接合面（２ａ）に押し付けて接合することにより、大気圧条件下での常温金属接合を可能にする接合方法及びその装置を実現する。

Description

明 細 書
接合方法及びその装置
技術分野
[0001] 本発明は、電子部品の電極と基板に形成された電極との間を直接接合して電子部 品を基板に実装する場合などに適用する接合方法及びその装置に関するものであ る。
背景技術
[0002] 複数の被接合物どうしを直接接合する実装方法として、各被接合物を真空チャン バー内に配して、減圧ガス雰囲気中で接合物の表面にエネルギー波を照射して洗 浄し、真空もしくは不活性ガス又は被接合物と反応しな ヽガスを密封したチャンバ一 内で被接合物どうしを対面させて加圧接合する方法が知られて ヽる（特許文献 1参照
) o
[0003] また、電子部品の Auバンプと基板の接続端子表面の Au膜とを金属接合で接合す るに際し、電子部品及び基板をチャンバ一内に収容して真空雰囲気とし、高速原子 線やイオンビームなど一方向に加速されたエネルギー粒子により電子部品の Auバン プと基板の接続端子表面の Au膜を洗浄し、真空雰囲気又はガス雰囲気を保ち、洗 浄により活性化されたバンプと接続端子とを接触させ、加圧することにより常温で両 者を接合する接合方法が知られて ヽる (特許文献 2参照)。本従来技術にお!ヽては、 大気中での接合も可能であるとし、洗浄工程によって得られた活性ィ匕状態が維持で きる時間を 10分以内として、室温から 150°Cに加熱して接合する。
特許文献 1 :特開 2001— 351892号公報
特許文献 2 :特開 2003— 197673号公報
発明の開示
発明が解決しょうとする課題
[0004] しカゝしながら、従来技術に係る接合方法においては、洗浄工程からの搬送及び接 合工程内に少なくとも 1つの真空チャンバ一又は不活性ガス雰囲気を作り出すため のチャンバ一が必要であり、加えて真空ポンプ、バルブ、制御系など一連の真空設 備が必要となり、超音波加熱接合やペースト硬化による接合方法に比して設備コスト が高くなる課題がある。また、電子部品や基板をチャンバ一に搬入、搬出するために
、減圧またはガス封入 Z大気開放を行うことに時間を要するため、生産タクトが低下 する課題がある。
[0005] 上記課題を解決するために、特許文献 2に示す従来技術中に開示されて ヽるよう に、洗浄工程からの搬送及び接合を大気中で行い得るようにすると、接合のために 真空設備等を設ける必要がなぐ接合のための設備コスト及び生産タ外を改善する ことができる。しかし、接合のために加熱が必要になるため、接合面に生じる酸化物 や吸着物などの接合を阻害する物質の除去、更には再吸着の防止、吸着量の管理 が課題となる。
[0006] そこで本発明は、少なくとも接合有害物質を除去する表面処理力も接合工程まで の工程を大気中且つ常温で行い得るようにした接合方法及びその装置を提供するこ とを目的とする。
課題を解決するための手段
[0007] 上記目的を達成するための本願第 1発明は、複数の被接合物の接合面につき表 面処理した後、複数の被接合物をそれぞれの接合面間で接合する接合方法であつ て、接合する少なくとも一方の接合面を所定粗さに加工する表面粗さ制御工程と、接 合面につき接合阻害物質の除去、接合有効物質の付着を図る表面処理工程と、複 数の被接合物をそれぞれの接合面を当接させて接合する接合工程とを有することを 特徴とする。
[0008] 上記接合方法によれば、表面粗さ制御工程により接合する一方の接合面の表面が 所定粗さに処理されるので、一方の接合面には微細なピークが微細な間隔で形成さ れた状態が得られ、この接合面を接合工程において他方の接合面に押し付けると、 ピークにより接合面の表面に存在する酸ィ匕物や吸着物などの接合阻害物質の層が せん断され、ほぼ均等な分布で、あるいは規則的に並ぶピークと他方の接合面が金 属接合して接合面間は接合される。所要の接合強度は接合面の一方に形成された 微細なピーク部分が他方の接合面と点状に接合する面積の総和である接合箇所の 総接合面積に依存するので、表面粗さ制御工程における一方の接合面の粗さを形 成するピークの形状や寸法、更には接合工程において所定粗さに形成された一方 の接合面を他方の接合面に当接させるときの押し込み量等を最適に選択することに より、所望の接合強度が得られる。このとき、接合面につき接合阻害物質の除去、接 合有効物質の付着を図る表面処理工程が実施されていることにより、接合阻害物質 がなく接合有効物質の存在下で接合が行われるので、ピークと他方の接合面との接 合は接合阻害物質の邪魔なく接合有効物質の働きを得てより確実になされる。
[0009] 上記接合方法の表面処理工程の一部として、各工程に先立って接合面に存在す る接合阻害物質を除去する初期表面洗浄工程を実施するのがより好ましぐより清浄 ィ匕された状態で各工程が実施でき、表面洗浄工程後の表面は再吸着した物質の存 在下で接合有効物質が付着する改質によって、大気圧雰囲気中で接合を実施する ことができる。
[0010] また、表面粗さ加工制御工程は、表面粗さが接合面の材質に対応しな 、範囲であ る場合、対応する表面粗さに加工制御するもので、所定粗さの凹凸が形成された凹 凸形成部材により接合する一方の接合面に凹凸を転写する方法、あるいは、大気圧 プラズマ処理による方法、あるいは、微細粒子を吹き付けるブラスト処理による方法を 適用することができる。
[0011] また、表面処理工程は、大気圧下でエネルギー粒子又はエネルギー波を接合面に 照射する方法が好適で、接合工程を大気圧及び室温雰囲気下で実施することがで きる。具体的には、紫外線の照射あるいは大気圧プラズマによる生成物の照射を適 用することができ、この表面処理工程は、接合工程と並行して実施することにより接合 阻害物質の除去、接合有効物質の付着がなされた後、速やかに接合することができ る。
[0012] また、本願第 2発明に係る接合装置は、複数の被接合物の接合面を表面処理した 後、複数の被接合物をそれぞれの接合面間で接合する接合装置であって、少なくと も一方が所定粗さに管理された接合面につき、接合阻害物質の除去、接合有効物 質の付着を図る表面処理手段と、複数の被接合物をそれぞれの接合面を当接させ て接合する接合手段とを備えてなることを特徴とする。
[0013] 上記接合装置によれば、一方の接合面の表面が所定粗さに管理されているので、 一方の接合面には微細なピークが微細な間隔で形成された状態が得られ、この接合 面を接合工程において他方の接合面に押し付けると、ピークにより接合面の表面に 存在する酸化物や吸着物などの接合阻害物質の層がせん断され、規則的に並ぶピ ークと他方の接合面が金属接合して接合面間は接合される。所要の接合強度は接 合面の一方に形成された微細なピーク部分が他方の接合面と点状に接合する面積 の総和である接合箇所の総接合面積に依存するので、表面粗さの管理により一方の 接合面に粗さを形成するピークの形状や寸法、更には接合手段において所定粗さ に形成された一方の接合面を他方の接合面に当接させるときの押し込み量等を最適 に選択することにより、所望の接合強度が得られる。このとき、表面処理手段により接 合面につき接合阻害物質の除去、接合有効物質の付着を図ることにより、接合阻害 物質がなく接合有効物質の存在下で接合が行われるので、ピークと他方の接合面と の接合は接合阻害物質の邪魔なく接合有効物質の働きを得てより確実になされる。
[0014] 上記接合装置の表面処理手段として、各手段による処理工程に先立って接合面に 存在する接合阻害物質を除去する初期表面洗浄手段を設けることがより好ましぐよ り清浄化された状態で各工程が実施でき、表面洗浄工程後の表面は再吸着した物 質の存在下で接合有効物質が付着する改質によって、大気圧雰囲気中で接合を実 施することができる。
[0015] また、上記接合装置において、接合面の材質に対応する表面粗さに加工制御する 表面粗さ加工制御手段を備えるのが好適で、それには、所定粗さの凹凸が形成され た凹凸形成部材により接合する一方の接合面に凹凸を転写する方法、あるいは、大 気圧プラズマ処理による方法、あるいは、微細粒子を吹き付けるブラスト処理による 方法を適用することができる。
[0016] また、表面処理手段は、大気圧下でエネルギー粒子又はエネルギー波を接合面に 照射する方法が好適で、接合を大気圧及び室温雰囲気下で実施することができる。 具体的には、紫外線の照射あるいは大気圧プラズマによる生成物の照射を適用する ことができ、この表面洗浄工程は、接合工程と平行して実施することにより接合阻害 物質の除去又は改質がなされた後、速やかに接合することができる。
[0017] なお、本発明の接合方法は、複数の被接合物の接合面につき表面処理した後、複 数の接合物をそれぞれの接合面間で接合する接合方法であって、接合する少なくと も一方の接合面を所定粗さに管理し、接合阻害物質のないまたは除去した接合面に つき大気雰囲気中の吸着物質の存在下で接合有効物質を付着させて改質する表面 処理工程と、複数の被接合物をそれぞれの接合面を前記改質下で当接させて、接 合する接合工程とを有することをも特徴として、大気雰囲気中での常温接合が確実 に行える。
図面の簡単な説明
[0018] [図 1]図 1は、実施形態に係る接合方法の工程手順を示すフローチャートである。
[図 2]図 2A〜図 2Cは、表面粗さ制御工程の手順を示す模式図である。
[図 3]図 3A〜図 3Cは、接合工程及び表面洗浄工程を示す模式図である。
[図 4]図 4は、表面粗さを説明する模式図である。
[図 5]図 5A〜図 5Cは、表面粗さ制御された接合面による接合を説明する模式図で ある。
[図 6]図 6A〜図 6Bは、主表面処理前と処理後との、接合阻害物質の増減を示すグ ラフおよび接合有効物質の増減を示すグラフである。
発明を実施するための最良の形態
[0019] 本実施の形態は、電子部品に形成された電極ランドに形成したバンプ電極を基板 に形成された電極ランドに接合して電子部品を基板に実装する場合に適用した例を 示すものである。尚、バンプ電極は基板の電極ランド上に形成してもよぐ基板及び 電子部品それぞれの電極ランドにバンプ電極を形成してもよい。バンプ電極は、一 般に電極ランドの厚さは 1 μ m以下であるため、電子部品及び基板の反りを吸収し、 双方に形成されている複数の電極ランドの接合による導通を確実に達成するために は、高さ数〜数十 m程度の緩衝材として不可欠である。
[0020] 図 1は、本実施の形態に係る接合方法の各工程手順を示すもので、以下、各工程 について図 2A〜図 4を参照して説明する。尚、図 1に示す Sl、 は、工程手順を 示すステップ番号であって、本文中に添記する番号に一致する。
[0021] まず、予備の表面処理工程として、電子部品 1のバンプ電極 lb及び基板 2の電極 ランド 2aの初期洗浄処理を行う（Sl)。初期洗浄処理は、大気中、真空中のいずれ であってもよぐプラズマによるエネルギー粒子、イオンビームやィ匕学薬品によるゥェ ットエッチングなどを実施する。この初期洗浄工程により、バンプ電極 lb及び電極ラ ンド 2aの表面に存在する接合を阻害する酸ィ匕物や吸着物を除去することができ、バ ンプ電極 lb及び電極ランド 2aを形成する金属が表面に露出する。もっとも、初期洗 浄工程は Siなど接合阻害物質の付着がな 、か、ほとんどな 、接合面であるような場 合は省略し、後述する主表面処理だけ実施してもよい。
[0022] 初期洗浄された電子部品 1は、表面粗さ制御工程を実施する表面処理ステージ 4 上に搬送され、基板 2はボンディングステージ 7上に搬送される（S2)。表面粗さ制御 工程において、バンプ電極 lbの表面が所定粗さに粗面化される（S3)。この表面粗 さ制御工程は、図 2Aに示すように、表面に所定粗さに粗面部 3aが形成された凹凸 プレート（凹凸形成部材） 3をステージ 4上に保持された電子部品 1のバンプ電極 lb に向けて下降させ、図 2Bに示すように、バンプ電極 lbを所定圧力で加圧した後、凹 凸プレート 3をバンプ電極 lb力も離反上昇させると、図 2Cに示すように、バンプ電極 lbの表面に凹凸形状が形成される。この凹凸形状を形成することの作用効果につい ての詳細は後述する。
[0023] 上記表面粗さ加工制御工程によりバンプ電極 lbに表面粗さの加工制御がなされた 電子部品 1は接合工程に向けて搬送され (S4)、図 3Aに示すように、接合ツール (接 合手段） 6に保持され、基板 2を保持するボンディングステージ 7の上方に、バンプ電 極 lbと電極ランド 2aとが一致するように接合ツール 6の位置が制御される。
[0024] 図 3Aに示す状態で、図示するように第 1の紫外線照射装置 (表面処理手段） 5aか ら電子部品 1に向けて紫外線を照射し、第 2の紫外線照射装置 (表面処理手段) 5b 力も基板 2に向けて紫外線を照射して、バンプ電極 lb及び電極ランド 2aに初期洗浄 後に付着している接合阻害物質の除去、再吸着している吸着物存在下での接合有 効物質の付着を図る主表面処理工程 (表面処理工程)を実施する（S5)。
[0025] 所定時間の主表面処理工程を実施した後、接合ツール 6を下降動作させ、図 3Bに 示すように、電子部品 1のバンプ電極 lbが基板 2の電極ランド 2aに加圧されるように 当接させると、バンプ電極 lbはその表面に形成された凸部分で電極ランド 2aに接合 する（S6)。この接合のメカニズムの詳細については後述する。 [0026] バンプ電極 lbと電極ランド 2aとの間が接合すると、接合ツール 6は電子部品 1の保 持を解除して上昇するので、図 3Cに示すように、バンプ電極 lbを電極ランド 2aに接 合して電子部品 1は基板 2に実装される。
[0027] 上記第 2の洗浄工程は接合工程が終了するまで継続するのがより好ま 、 (S7)。
また、紫外線による吸着物の解離から除去を促進するため、 02ブローを行うこともで きる。
[0028] 上記表面粗さ制御工程によるバンプ電極 lbの表面処理の作用効果及び表面処理 されたバンプ電極 lbと電極ランド 2aとの間の接合メカニズムについて以下に詳細を 説明する。
[0029] バンプ電極 lbは、電解、無電解メツキによるものや、スタッドバンプボンディングェ 法によるものが主流である。その表面には十点平均粗さでマイクロメートルオーダー のうねりがあり、更に、うねりの 1つ 1つにはナノメートルオーダーのうねりがある。前記 マイクロメートルオーダーのうねり（十点平均粗さ）を大粗さ、ナノメートルオーダーのう ねり（十点平均粗さ）を小粗さと定義すると、大粗さは、粗さ測定器やレーザー測定が 可能であるが、小粗さは原子間力顕微鏡ほどの分解能によって測定できるレベルと なる。図 4に示すように、大粗さの三角波近似を行ったときのピーク値を hi、波形のピ ツチを blとし、小粗さのピーク値を h2、波形のピッチを b2とすると、一般的に、金 (Au )スパッタ膜によるバンプ電極 lbの場合では、大粗さのピーク値 hiはサブマイクロメ 一トル程度であり、小粗さのピーク値 h2は lOnm程度であり、メツキによるバンプ電極 lbの場合では、大粗さのピーク値 hiは数マイクロメートル、小粗さのピーク値 h2は 5 Onm程度である。
[0030] 表面処理の予備洗浄も主表面処理も何も施さな 、場合、図 5Aに示すように、大気 中ではバンプ電極 lb及び電極ランド 2aの表面には酸ィ匕物や有機物の吸着物などの 接合を阻害する阻害物質 Gが存在するため、金属の表面どうしが直接接触する状態 にはならないので接合に失敗する。初期洗浄を行うと、阻害物質 Gが金属表面から 除去されるので、金属表面が他の物質と反応しやすい状態となるため、金属どうしを 接触させると、金属結合による接合が可能となる。しかし、大気中での接合や 1 X 10— 4 Pa程度の真空度では、阻害物質 Gが除去された後も再吸着があり、やはり接合に失 敗する。このとき、接合が可能となる場合は、図 5Bに示すように、前述したように金属 表面、ここではバンプ電極 lb及び電極ランド 2aの表面には大小のうねりがあり、うね りの頂上部分の位置が互いに一致しているような場合に、バンプ電極 lbが電極ラン ド 2aに押し付けられると、再吸着物 Fの層がせん断し、金属の新生面など、の反応の 高い活性面が界面に生成され、その部分で金属結合による接合箇所 Eにより接合が なされる。しかし、このような接合箇所 Eは全くのランダムに生じるため、確実な接合状 態が得られる保証はなぐ接合強度にもばらつきが生じる。
[0031] 本発明は上記接合メカニズムを応用し、量産工程下においても安定した接合状態 が得られるように、凹凸プレート 3の粗面部 3aには大粗さのパラメータ hi, blで規格 化された凹凸を形成する。図 2に示すように、この凹凸プレート 3にピーク間隔 bp、ピ ーク高さ hpで凹凸が形成された粗面部 3aが押し付けられたバンプ電極 lbの表面に は、図 5Cに示すように、電極ランド 2aに対する接合箇所 Eの数が管理された凹凸が 形成される。この表面粗さ制御工程における粗さの管理により、再吸着物を確実にせ ん断する部分を発生させることができ、接合強度品質を量産工程内で管理することが できる。
〇接合箇所: E
〇接合箇所間の寸法: bp (凹凸プレート 3に形成された凹凸のピーク間隔であり、 設計により決定される寸法）
〇接合箇所における接合面積: s (接合箇所 Eの形状、寸法、押し込み量によって 決定される理論値）
〇単位面積当りの接合面積: Sc
〇接合物の被接合面積： S (実測可能な値）
〇総接合面積: So、とすると、
単位面積 1と Eを 4頂点とする 1辺長さ bpの正方形の面積 (bp)2との比は、単位面積 当りの接合面積 Scと接合面積 s (1頂点当りの接合面積 sZ4の 4頂点分として、 4 X s Z4)との比に等しくなり、下式（1)が成り立つ。
[0032] 1 : (bp) 2 = Sc : s- -- (l)
ここで、接合物の被接合面積: Sとは、接合箇所 Eにおける正味の有効接合面積 sと は異なり、図 5Cに示すように、有効接合部と非接合部とを含み、外見上は接合部と 認識される実測上の投影総面積を意味する。
[0033] 上記（1)式力も単位面積当りの接合面積 Scは、下式（2)として得られ、接合部の正 味の総接合面積 Soは、外見上の接合面積である被接合面積 Sに単位面積当りの接 合面積 Scを乗じたものとなるので、下式（3)として表すことができる。この式（3)に式（ 4)を代入すると、下式 (4)が得られる。
[0034] Sc = s/ (bp) 2- -- (2)
So = S X Sc- -- (3)
So = S X s/ (bp) 2- -- (4)
上記総接合面積 Soと接合強度との相関関係を把握しておけば、所定の接合強度 を得るために必要な総接合面積 Soを求めることができるので、式 (4)から総接合面 積 Soを得るために必要な接合面積 s、あるいは接合箇所間の寸法 bpを決定すれば よい。そのとき、接合面積 sは、凹凸プレート 3に形成された粗面部 3aの 1接合箇所の 形状や寸法、押し込み量等の数値を選択することにより決定することができる。
[0035] 凹凸プレート 3の粗面部 3aはドライエッチングあるいはサンドブラスト等により一定の 粗さが周期性のある状態になるように形成される。そのピーク高さ hp及びピーク間隔 bpの決定は、バンプ電極 lbの表面状態、サイズ、材質に依存する。本実施の形態に おいては、バンプ電極 lbの材質は金とし、電極 1つ当たりの接合しょうとする表面積 力 S30 m2程度の微小なものを考慮して、 hp = 2〜5マイクロメートル、より良くは 3マ イク口メートル前後、 bp = 1〜3マイクロメートル、より良くは 1. 7マイクロメートル前後と している。しかし、これは接合材料によって異なり、潰れにくい Siどうしの接合ではより 細力べして対応する。
[0036] 上記粗面化により規格化された接合箇所 Eを設けても再吸着物 Fの大小により各接 合箇所 Eでの接合達成度にバラツキが生じることが懸念されるし、実際に接合を失敗 することがある。これを解消するために、前記主表面処理工程が設けられており、大 気中での金属表面の化学状態を管理し制御する目的で再吸着物 F中の接合阻害物 質の除去、接合有効物質の付着が図られる。ここでは、第 1の紫外線照射装置 5aか ら電子部品 1のバンプ電極 lb形成面に向けて紫外線を照射し、第 2の紫外線照射装 置 5bから基板 2の電極ランド 2a形成面に向けて紫外線を照射し、紫外光により再吸 着物 Fにおける接合阻害物質の除去、接合有効物質の付着を図る主表面処理がな される。この結果、残余吸着物の存在下でも接合有効物質の働きによって残余吸着 物の影響を緩和ないしは無くして接合が首尾よく達成される。これは、接合有効物質 が残余吸着物層の接合部での剪断を促進しているものと思われる。つまり、残余吸 着物層が接合を邪魔しないように接合面の表面状態が接合有効物質によって改質し たものといえる。
[0037] 以上説明した構成においては、予備表面処理としての初期洗浄工程が終了した電 子部品 1を表面処理ステージ 4上に搬送して凹凸形状を転写するようにして 、るが、 初期洗浄工程が終了した電子部品 1を接合ツール 6により保持し、粗面部 3aを上向 き配置した凹凸プレート 3上に接合ツール 6を下降させ、保持した電子部品 1のバン プ電極 lbを粗面部 3aに押し付け、バンプ電極 lbの表面に凹凸を転写するように構 成することちでさる。
[0038] また、表面粗さ加工制御工程を実施する手段として説明した凹凸プレート 3による 凹凸形状の転写の他、プラズマ処理やブラスト処理によって凹凸形状即ち粗面を直 接形成することもできる。また、主表面処理工程を実施する手段として説明した大気 圧プラズマにより生成されるイオン等の生成物の照射によっても可能である。
[0039] また、接合工程において電子部品 1及び基板 2を 50〜250°C程度に加熱すること により、金属の拡散速度を加速させることができるので、接合力を更に強化することが できる。
[0040] 尚、以上説明した構成においては、電子部品 1に形成されたバンプ電極 lbに表面 粗さ制御工程を施すようにして!/、るが、基板 2側の電極ランド 2aに粗面形成処理を行 つても同様の効果が得られる。
[0041] 次に、最良の形態における参考工程と実施の結果について、以下 1〜4の工程に つき説明する。
[0042] 1. Auスタッドバンプ lbを電子部品 1上に形成
2.電子部品 1の接合部である Au表面を、 Si基板をエッチング加工して作成した型 で規則的な凹凸をつけてる粗面化工程を表面粗さ加工制御工程として実施 (傾斜角 54. 7° 、異方性エッチング 1. 7 111高さ、ピッチ3 111)
3.粗面化された電子部品 1上の Auバンプと、電子部品 2上の Auスパッタ電極を U Vランプにて同時に表面処理し、接合阻害物質の除去、接合有効物質の付着を図る (低圧水銀ランプ 波長 185〜254nm、照度 20mWZcm2、照射時間 90s)
4.接合面温度 100°Cになるよう、電子部品 1、電子部品 2の両方、もしくは一方を 加熱し、下圧することにより、凝着またはおよび拡散接合を起こし、接合させる
[0043] 以上の工程によって、 Au— Au接合強度としては、接合面積 φ 50 m (1963 μ in )にて、均一な剪断破壊強度 200mNを得た。また、初期洗浄工程として、 Arプラズ マ洗浄（200W、 30s)を行うと、より接合強度が上昇し、同接合においてせん断破壊 強度が 300mN以上となった。ただし、この場合、せん断破壊部位が接合界面以外 で発生したため、接合強度の定量ィ匕はできていないが、接合強度を保証する上では 十分な隔靴をえることができた。
[0044] なお、接合温度は室温からみて、高ければ高 ヽほど良好な接合結果を得て 、る。
また、前記主表面処理の前後において、図 6Aの通り炭素 Cのピークが低くなつてい て、図 6Bに示す通り酸素 Oのピークが高くなつている。ここに、断素 Cが除去され、酸 素 O付着して増カロしたことで、接合に有利な表面状態に改質でき、上記好結果を得 たものといえる。そして、 Cは接合有害物質であり、 Oは接合有効物質であるといえる 産業上の利用可能性
[0045] 以上説明したとおり本発明によれば、第 1の洗浄工程により被接合物の表面を洗浄 して酸ィ匕物や吸着物等の接合阻害物質の除去を行った後、表面粗さ制御工程によ り一方の接合面に所定粗さの凹凸を形成し、第 2の洗浄工程により接合面に付着し た再吸着物の除去を行って凹凸形成した接合面を他方の接合面に押し付けて接合 することにより、常温で且つ大気中での接合が可能となることから、フリップチップ方 式による電子部品実装に適用することに有効である。

Claims

請求の範囲
[I] 複数の被接合物（1, 2)の接合面（lb, 2a)にっき表面処理をした後、複数の被接 合物をそれぞれの接合面間で接合する接合方法であって、接合する少なくとも一方 の接合面（lb)を所定粗さに管理し、接合面につき接合阻害物質 (G)の除去、接合 有効物質の付着を図る表面処理工程と、複数の被接合物をそれぞれの接合面を当 接させて接合する接合工程 (S6)とを有する接合方法。
[2] 表面処理工程は、接合面（lb, 2a)に存在する接合阻害物質 (G)を除去する初期 表面洗浄工程 (S1)を含む請求の範囲第 1項に記載の接合方法。
[3] 各工程を大気圧雰囲気中で実施する請求の範囲第 1項に記載の接合方法。
[4] 表面粗さの管理は、表面粗さが接合面（lb)の材質に対応しない範囲である場合、 対応する表面粗さに加工制御する工程を含む請求の範囲第 1項に記載の接合方法
[5] 表面粗さ加工制御工程は、所定粗さの凹凸が形成された凹凸形成部材 (3)により 接合する少なくとも一方の接合面（lb)に凹凸を転写する請求の範囲第 4項に記載 の接合方法。
[6] 表面粗さ加工制御工程は、大気圧プラズマ処理である請求の範囲第 4項に記載の 接合方法。
[7] 表面粗さ加工制御工程は、微細粒子を吹き付けるブラスト処理である請求の範囲 第 4項に記載の接合方法。
[8] 表面処理工程は、大気圧下でエネルギー粒子又はエネルギー波を接合面に照射 する請求の範囲第 1項に記載の接合方法。
[9] 表面処理工程は、接合工程 (S6)と並行して実施する請求の範囲第 1項に記載の 接合方法。
[10] 表面処理工程は、紫外線の照射である請求の範囲第 1、第 8及び第 9項の何れか 1 項に記載の接合方法。
[II] 表面処理工程は、大気圧プラズマによる生成物の照射である請求の範囲第 1、第 8 及び第 9項の何れか 1項に記載の接合方法。
[12] 接合工程 (S6)は、室温雰囲気下で実施する請求の範囲第 1又は第 9項に記載の 接合方法。
[13] 複数の被接合物（1, 2)の接合面（lb, 2a)を表面処理した後、複数の被接合物を それぞれの接合面間で接合する接合装置であって、少なくとも一方が所定粗さに管 理された接合面につき接合阻害物質 (G)の除去、接合有効物質の付着を図る表面 処理手段と、複数の被接合物をそれぞれの接合面を当接させて接合する接合手段（ 6)とを備えてなる接合装置。
[14] 表面処理手段は、接合面（lb、 2a)の接合阻害物質 (G)を除去する初期表面洗浄 手段が設けられている請求の範囲第 13項に記載の接合装置。
[15] 表面処理手段は大気圧中で処理動作を実行する請求の範囲第 13項に記載の接 合装置。
[16] 接合面（lb)をその材質に対応する表面粗さに加工制御する表面粗さ加工制御手 段を備える請求の範囲第 13項に記載の接合装置。
[17] 表面粗さ加工制御手段は、接合面（lb)に、所定粗さの凹凸が形成された凹凸形 成部材 (3)により凹凸を転写する請求の範囲第 16項に記載の接合装置。
[18] 表面粗さ加工制御手段は、大気圧プラズマ処理により接合面を所定粗さに処理す る請求の範囲第 16項に記載の接合装置。
[19] 表面粗さ加工制御手段は、接合する一方の接合面（lb)に微細粒子を吹き付けて 所定粗さに処理する微粒子ブラスト処理装置である請求の範囲第 16項に記載の接 合装置。
[20] 表面処理手段は、紫外線照射装置である請求の範囲第 13又は第 16項に記載の 接合装置。
[21] 表面処理手段は、大気圧プラズマによる生成物を照射する大気圧プラズマ処理装 置である請求の範囲第 13又は第 16項に記載の接合装置。
[22] 複数の被接合物（1, 2)の接合面（lb, 2a)にっき表面処理した後、複数の接合物 をそれぞれの接合面間で接合する接合方法であって、接合する少なくとも一方の接 合面（lb)を所定粗さに管理し、接合阻害物質 (G)のな 、または除去した接合面に つき大気雰囲気中の吸着物質の存在下で接合有効物質を付着させて改質する表面 処理工程と、複数の被接合物をそれぞれの接合面を前記改質下で当接させて、接 合する接合工程 (S6)とを有する接合方法。
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WO2023152961A1 (ja) * 2022-02-14 2023-08-17 富士通株式会社 電子装置及び電子装置の製造方法

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US7659148B2 (en) 2010-02-09

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