WO2005104253A8 - Laser patterning of light emitting devices and patterned light emitting devices - Google Patents

Laser patterning of light emitting devices and patterned light emitting devices

Info

Publication number
WO2005104253A8
WO2005104253A8 PCT/US2005/001933 US2005001933W WO2005104253A8 WO 2005104253 A8 WO2005104253 A8 WO 2005104253A8 US 2005001933 W US2005001933 W US 2005001933W WO 2005104253 A8 WO2005104253 A8 WO 2005104253A8
Authority
WO
WIPO (PCT)
Prior art keywords
layer
semiconductor material
light emitting
emitting devices
substrate
Prior art date
Application number
PCT/US2005/001933
Other languages
French (fr)
Other versions
WO2005104253A1 (en
Inventor
Matthew Donofrio
Original Assignee
Cree Inc
Matthew Donofrio
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc, Matthew Donofrio filed Critical Cree Inc
Priority to JP2007506145A priority Critical patent/JP2007537581A/en
Priority to EP05711773A priority patent/EP1733438B1/en
Priority to AT05711773T priority patent/ATE532218T1/en
Publication of WO2005104253A1 publication Critical patent/WO2005104253A1/en
Publication of WO2005104253A8 publication Critical patent/WO2005104253A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Abstract

Light extraction features are provided for a light emitting device having a substrate and a semiconductor light emitting element on the substrate by shaping a surface of a layer of semiconductor material utilizing a laser to define three dimensional patterns in the layer of semiconductor material. The layer of semiconductor material may be the substrate. In particular embodiments of the present invention, the surface of the layer of semiconductor material is shaped by applying laser light to the layer of semiconductor material at an energy sufficient to remove material from the layer of semiconductor material. The laser light may also by applied in a blanket manner at a level below the ablation threshold. The application of laser light to the layer of semiconductor material may be followed by etching the substrate. The layer of semiconductor material may be anisotropically etched. A mask could also be patterned utilizing laser light and the layer of semiconductor material etched using the mask. Light emitting devices have three dimensional patterns in a layer of semiconductor material of the device are also provided.
PCT/US2005/001933 2004-04-01 2005-01-24 Laser patterning of light emitting devices and patterned light emitting devices WO2005104253A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007506145A JP2007537581A (en) 2004-04-01 2005-01-24 Laser patterning of light emitting device and patterned light emitting device
EP05711773A EP1733438B1 (en) 2004-04-01 2005-01-24 Laser patterning of light emitting devices and patterned light emitting devices
AT05711773T ATE532218T1 (en) 2004-04-01 2005-01-24 LASER STRUCTURING OF LIGHT-EMITTING COMPONENTS AND STRUCTURED LIGHT-EMITTING COMPONENTS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/815,293 US7419912B2 (en) 2004-04-01 2004-04-01 Laser patterning of light emitting devices
US10/815,293 2004-04-01

Publications (2)

Publication Number Publication Date
WO2005104253A1 WO2005104253A1 (en) 2005-11-03
WO2005104253A8 true WO2005104253A8 (en) 2006-11-02

Family

ID=34960469

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/001933 WO2005104253A1 (en) 2004-04-01 2005-01-24 Laser patterning of light emitting devices and patterned light emitting devices

Country Status (7)

Country Link
US (4) US7419912B2 (en)
EP (1) EP1733438B1 (en)
JP (1) JP2007537581A (en)
KR (1) KR20070013292A (en)
AT (1) ATE532218T1 (en)
TW (1) TW200534510A (en)
WO (1) WO2005104253A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US8264138B2 (en) 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
US8310143B2 (en) 2006-08-23 2012-11-13 Cree, Inc. Lighting device and lighting method
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation

Families Citing this family (150)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101148332B1 (en) 2003-04-30 2012-05-25 크리, 인코포레이티드 High powered light emitter packages with compact optics
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
KR100664988B1 (en) * 2004-11-04 2007-01-09 삼성전기주식회사 Light extraction efficiency-improved semiconductor light emitting device
US7563625B2 (en) * 2005-01-11 2009-07-21 SemiLEDs Optoelectronics Co., Ltd. Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
US7682981B2 (en) * 2005-01-27 2010-03-23 Contour Semiconductor, Inc. Topography transfer method with aspect ratio scaling
JP4244953B2 (en) * 2005-04-26 2009-03-25 住友電気工業株式会社 Light emitting device and manufacturing method thereof
JP2006324324A (en) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd Light emitting device, method of manufacturing same, and semiconductor substrate
KR20060131327A (en) * 2005-06-16 2006-12-20 엘지전자 주식회사 Method of manufacturing light emitting diode
FI20060358L (en) * 2006-04-12 2007-10-13 Picodeon Ltd Oy Procedure for regulating the ablation threshold
US20070040182A1 (en) * 2005-08-16 2007-02-22 Julian Lee Light emitting diode packaging structure
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
EP1830422A3 (en) * 2006-03-03 2012-03-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
KR101198763B1 (en) * 2006-03-23 2012-11-12 엘지이노텍 주식회사 Post structure and LED using the structure and method of making the same
KR100736623B1 (en) * 2006-05-08 2007-07-09 엘지전자 주식회사 Led having vertical structure and method for making the same
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
SG140481A1 (en) * 2006-08-22 2008-03-28 Agency Science Tech & Res A method for fabricating micro and nano structures
US7910938B2 (en) * 2006-09-01 2011-03-22 Cree, Inc. Encapsulant profile for light emitting diodes
US8425271B2 (en) 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
JP2008130799A (en) * 2006-11-21 2008-06-05 Sharp Corp Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element
US9318327B2 (en) * 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
EP2095011A1 (en) 2006-12-04 2009-09-02 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
CN101622493A (en) * 2006-12-04 2010-01-06 科锐Led照明科技公司 Lighting device and lighting method
JP5082752B2 (en) 2006-12-21 2012-11-28 日亜化学工業株式会社 Manufacturing method of substrate for semiconductor light emitting device and semiconductor light emitting device using the same
US7663148B2 (en) * 2006-12-22 2010-02-16 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced strain light emitting layer
EP3848970A1 (en) 2007-01-22 2021-07-14 Cree, Inc. Multiple light emitting diode emitter
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8212262B2 (en) * 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
US20080197378A1 (en) * 2007-02-20 2008-08-21 Hua-Shuang Kong Group III Nitride Diodes on Low Index Carrier Substrates
KR101382677B1 (en) * 2007-04-16 2014-04-07 엘지이노텍 주식회사 Wafer substrate, semiconductor light emitting device and manufacturing method of semiconductor light emitting device using the wafer substrate
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
TWI343663B (en) * 2007-05-15 2011-06-11 Epistar Corp Light emitting diode device and manufacturing method therof
TWI354382B (en) * 2007-06-01 2011-12-11 Huga Optotech Inc Semiconductor substrate with electromagnetic-wave-
US9401461B2 (en) * 2007-07-11 2016-07-26 Cree, Inc. LED chip design for white conversion
WO2009012287A1 (en) 2007-07-17 2009-01-22 Cree Led Lighting Solutions, Inc. Optical elements with internal optical features and methods of fabricating same
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
KR101525274B1 (en) * 2007-10-26 2015-06-02 크리, 인코포레이티드 Illumination device having one or more lumiphors, and methods of fabricating same
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
JP5092740B2 (en) * 2007-12-28 2012-12-05 住友電気工業株式会社 Manufacturing method of semiconductor device
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP2011512037A (en) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド System and method for emitter layer shaping
WO2009128946A1 (en) * 2008-04-18 2009-10-22 Massachusetts Institute Of Technology Wedge imprint patterning of irregular surface
DE102008021658A1 (en) * 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh Light emitting device for e.g. traffic signal application, has LED, and partially transparent material e.g. silicon and organic polymer e.g. polymethyl methacrylate or polyimide, surrounding LED in direction of light emitted by LED
KR101533296B1 (en) * 2008-07-08 2015-07-02 삼성전자주식회사 Semiconductor Light Emitting Device Comprising Uneven Substrate and Manufacturing Method thereof
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
KR101051140B1 (en) * 2009-01-08 2011-07-22 주식회사 아이엠티 LED encapsulant etching method and etching pattern accordingly
DE102009008223A1 (en) * 2009-02-10 2010-08-12 Osram Opto Semiconductors Gmbh Method for structuring a semiconductor surface and semiconductor chip
KR20100093872A (en) * 2009-02-17 2010-08-26 삼성엘이디 주식회사 Nitride semiconductor light emitting device and manufacturing method thereof
US8096671B1 (en) 2009-04-06 2012-01-17 Nmera, Llc Light emitting diode illumination system
US8187983B2 (en) 2009-04-16 2012-05-29 Micron Technology, Inc. Methods for fabricating semiconductor components using thinning and back side laser processing
DE102009018286A1 (en) * 2009-04-21 2010-10-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip manufacturing method, involves applying structuring process on structured surface of photoresist, and partially transferring structure attached to photoresist to outer surface of uncoupling layer
DE102009023355A1 (en) * 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US20110006163A1 (en) * 2009-07-13 2011-01-13 David Wait Segmented parabolic concentrator for space electric power
US8507304B2 (en) * 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
KR100965904B1 (en) * 2009-09-02 2010-06-24 한국기계연구원 Patterning method of metal oxide thin film using nanoimprint and manufacturing method of light emitting diode
US8435415B2 (en) * 2009-11-24 2013-05-07 The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards and Technology Nanofabrication process and nanodevice
US8981397B2 (en) * 2010-02-12 2015-03-17 Tsmc Solid State Lighting Ltd. Light-emitting devices on textured substrates
US8299479B2 (en) * 2010-03-09 2012-10-30 Tsmc Solid State Lighting Ltd. Light-emitting devices with textured active layer
JP2011211075A (en) * 2010-03-30 2011-10-20 Toyoda Gosei Co Ltd Method for producing group-iii nitride semiconductor light-emitting element
US8538224B2 (en) 2010-04-22 2013-09-17 3M Innovative Properties Company OLED light extraction films having internal nanostructures and external microstructures
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
KR101130363B1 (en) 2010-06-09 2012-03-27 고려대학교 산학협력단 Light Emitting Diode Device And The Fabrication Method Of The Same
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US9389408B2 (en) 2010-07-23 2016-07-12 Zeta Instruments, Inc. 3D microscope and methods of measuring patterned substrates
JP5222916B2 (en) * 2010-09-17 2013-06-26 シャープ株式会社 Semiconductor substrate manufacturing method, semiconductor device, and electrical apparatus
US9293653B2 (en) * 2010-10-08 2016-03-22 Guardian Industries Corp. Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same
JP5758116B2 (en) * 2010-12-16 2015-08-05 株式会社ディスコ Split method
TWI429110B (en) 2011-01-07 2014-03-01 Nat Univ Tsing Hua Light emitting device with autocloning photonic crystals and manufacturing method thereof
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US20120242814A1 (en) * 2011-03-25 2012-09-27 Kenneth Kubala Miniature Wafer-Level Camera Modules
KR20120112004A (en) * 2011-03-31 2012-10-11 모저 베어 인디아 엘티디 Method for patterning a lacquer layer to hold electrical gridlines
US8718432B1 (en) * 2011-04-21 2014-05-06 Octrolix Bv Method for forming a spotsize converter
US9268089B2 (en) * 2011-04-21 2016-02-23 Octrolix Bv Layer having a non-linear taper and method of fabrication
TWI470829B (en) * 2011-04-27 2015-01-21 Sino American Silicon Prod Inc A method to fabrication an epitaxial substrate, a light emitting diode and the method to fabrication said light emitting diode
US9263636B2 (en) 2011-05-04 2016-02-16 Cree, Inc. Light-emitting diode (LED) for achieving an asymmetric light output
KR101240168B1 (en) * 2011-06-07 2013-03-11 삼성코닝정밀소재 주식회사 Method of manufacturing nitride film
US9324560B2 (en) * 2011-09-06 2016-04-26 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
US10032956B2 (en) 2011-09-06 2018-07-24 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
WO2013033841A1 (en) * 2011-09-06 2013-03-14 Trilogy Environmental Systems Inc. Hybrid desalination system
JP5535164B2 (en) * 2011-09-22 2014-07-02 株式会社東芝 Imprint method and imprint apparatus
TWI447955B (en) 2011-11-23 2014-08-01 Ind Tech Res Inst Light-emitting diode element, manufacturing method of light guide structure thereof and equipment of forming the same
CN103137798B (en) * 2011-12-03 2015-09-30 清华大学 The preparation method of light-emitting diode
CN103137796B (en) * 2011-12-03 2015-07-29 清华大学 The preparation method of light-emitting diode
CN103137797B (en) * 2011-12-03 2015-09-30 清华大学 The preparation method of light-emitting diode
CN102522465A (en) * 2011-12-28 2012-06-27 厦门市三安光电科技有限公司 Method for manufacturing light emitting diode
CN103258716B (en) * 2012-02-16 2016-03-09 财团法人工业技术研究院 Method for producing semiconductor layer with textured surface, method for producing solar cell
DE112012006015T5 (en) * 2012-03-12 2014-12-11 Mitsubishi Electric Corporation Production process for solar cell
TWI515929B (en) * 2012-04-24 2016-01-01 新世紀光電股份有限公司 Patterned?base material?and light emitting diode component for lightemitting angle of convergence
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
US9780335B2 (en) 2012-07-20 2017-10-03 3M Innovative Properties Company Structured lamination transfer films and methods
CN104903776A (en) * 2012-11-29 2015-09-09 新加坡科技研究局 Method of forming a film with a lenticular lens array
US9711744B2 (en) * 2012-12-21 2017-07-18 3M Innovative Properties Company Patterned structured transfer tape
US20140175707A1 (en) 2012-12-21 2014-06-26 3M Innovative Properties Company Methods of using nanostructured transfer tape and articles made therefrom
US20150049511A1 (en) * 2013-03-15 2015-02-19 Cree, Inc. Waveguide Having Unidirectional Illuminance
KR20140134420A (en) * 2013-05-14 2014-11-24 삼성전자주식회사 Method for manufacturing semiconductor light emitting device package
US9245573B2 (en) 2013-06-24 2016-01-26 Seagate Technology Llc Methods of forming materials for at least a portion of a NFT and NFTs formed using the same
US10537027B2 (en) 2013-08-02 2020-01-14 Orbotech Ltd. Method producing a conductive path on a substrate
WO2015030391A1 (en) * 2013-09-02 2015-03-05 엘지이노텍(주) Light-emitting element
TWI597863B (en) * 2013-10-22 2017-09-01 晶元光電股份有限公司 Light-emitting device and manufacturing method thereof
WO2015069283A1 (en) * 2013-11-08 2015-05-14 Empire Technology Development Llc Printed ball lens and methods for their fabrication
WO2015069444A1 (en) * 2013-11-11 2015-05-14 3M Innovative Properties Company Nanostructures for oled devices
US9246134B2 (en) 2014-01-20 2016-01-26 3M Innovative Properties Company Lamination transfer films for forming articles with engineered voids
EP3096945B1 (en) * 2014-01-20 2019-08-14 3M Innovative Properties Company Lamination transfer films for forming reentrant structures
US20150202834A1 (en) * 2014-01-20 2015-07-23 3M Innovative Properties Company Lamination transfer films for forming antireflective structures
JP2017508641A (en) 2014-01-22 2017-03-30 スリーエム イノベイティブ プロパティズ カンパニー Micro-optics for glazing
TW201539736A (en) 2014-03-19 2015-10-16 3M Innovative Properties Co Nanostructures for color-by-white OLED devices
KR20150121306A (en) * 2014-04-18 2015-10-29 포항공과대학교 산학협력단 Nitride semiconductor light emitting device and producing method of the same
US9472788B2 (en) 2014-08-27 2016-10-18 3M Innovative Properties Company Thermally-assisted self-assembly method of nanoparticles and nanowires within engineered periodic structures
US9786845B1 (en) * 2014-08-29 2017-10-10 Northwestern University Optical discs as low-cost, quasi-random nanoimprinting templates for photon management
EP3209841B1 (en) 2014-10-20 2021-04-07 3M Innovative Properties Company Insulated glazing units and microoptical layer comprising microstructured diffuser and methods
KR20160096741A (en) 2015-02-05 2016-08-17 (주)제이엠솔루션 Optical device
US10518512B2 (en) 2015-03-31 2019-12-31 3M Innovative Properties Company Method of forming dual-cure nanostructure transfer film
US10106643B2 (en) 2015-03-31 2018-10-23 3M Innovative Properties Company Dual-cure nanostructure transfer film
KR20220078733A (en) * 2015-08-22 2022-06-10 도쿄엘렉트론가부시키가이샤 Substrate backside texturing
CN113345988A (en) 2015-10-01 2021-09-03 克利公司 Light emitting device comprising flip chip light emitting diode
CN105702825B (en) * 2016-04-01 2018-01-30 陕西新光源科技有限责任公司 A kind of preparation method of micron order size graphical sapphire substrate
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
US11164600B1 (en) 2016-08-26 2021-11-02 Seagate Technology Llc Methods of forming materials
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
EP3662514A1 (en) 2017-08-03 2020-06-10 Cree, Inc. High density pixelated-led chips and chip array devices, and fabrication methods
US20190164945A1 (en) * 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US11923481B2 (en) 2018-01-29 2024-03-05 Creeled, Inc. Reflective layers for light-emitting diodes
US11387389B2 (en) 2018-01-29 2022-07-12 Creeled, Inc. Reflective layers for light-emitting diodes
US11031527B2 (en) 2018-01-29 2021-06-08 Creeled, Inc. Reflective layers for light-emitting diodes
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
US10862002B2 (en) * 2018-04-27 2020-12-08 Facebook Technologies, Llc LED surface modification with ultraviolet laser
CN109166952B (en) * 2018-09-04 2021-06-29 孙逊运 Graphical sapphire substrate and preparation method thereof
US10879441B2 (en) 2018-12-17 2020-12-29 Cree, Inc. Interconnects for light emitting diode chips
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
US10985294B2 (en) 2019-03-19 2021-04-20 Creeled, Inc. Contact structures for light emitting diode chips
US11094848B2 (en) 2019-08-16 2021-08-17 Creeled, Inc. Light-emitting diode chip structures
US11817526B2 (en) 2019-10-29 2023-11-14 Creeled, Inc. Texturing for high density pixelated-LED chips and chip array devices
CN110814515B (en) * 2019-11-15 2021-08-17 中南大学 Hollow microstructure of LED and manufacturing method thereof
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
WO2022240752A1 (en) * 2021-05-10 2022-11-17 Applied Materials, Inc. Methods of greytone imprint lithography to fabricate optical devices

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3954534A (en) * 1974-10-29 1976-05-04 Xerox Corporation Method of forming light emitting diode array with dome geometry
US4545366A (en) * 1984-09-24 1985-10-08 Entech, Inc. Bi-focussed solar energy concentrator
US4672949A (en) * 1985-02-13 1987-06-16 Entech, Inc. Solar energy collector having an improved thermal receiver
US4719904A (en) * 1985-02-13 1988-01-19 Entech, Inc. Solar thermal receiver
US4711972A (en) * 1985-07-05 1987-12-08 Entech, Inc. Photovoltaic cell cover for use with a primary optical concentrator in a solar energy collector
CA1313792C (en) * 1986-02-28 1993-02-23 Junji Hirokane Method of manufacturing photo-mask and photo-mask manufactured thereby
US4865685A (en) 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
CA1318722C (en) * 1988-08-09 1993-06-01 Donald Barry Carlin Surface emitting lasers with combined output
US4915981A (en) * 1988-08-12 1990-04-10 Rogers Corporation Method of laser drilling fluoropolymer materials
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
EP0442002B1 (en) * 1990-02-13 1994-01-12 Siemens Aktiengesellschaft Radiation producing semiconductor device
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5210766A (en) * 1990-12-27 1993-05-11 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
JPH04329801A (en) * 1991-04-30 1992-11-18 Sumitomo Electric Ind Ltd Production of sintered parts
US5505789A (en) * 1993-04-19 1996-04-09 Entech, Inc. Line-focus photovoltaic module using solid optical secondaries for improved radiation resistance
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5604135A (en) * 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5498297A (en) * 1994-09-15 1996-03-12 Entech, Inc. Photovoltaic receiver
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
DE19629920B4 (en) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Light-emitting diode with a non-absorbing distributed Bragg reflector
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US6031179A (en) * 1997-05-09 2000-02-29 Entech, Inc. Color-mixing lens for solar concentrator system and methods of manufacture and operation thereof
GB9709949D0 (en) * 1997-05-17 1997-07-09 Dowd Philip Vertical-cavity surface-emitting laser polarisation control
US6393685B1 (en) * 1997-06-10 2002-05-28 The Regents Of The University Of California Microjoinery methods and devices
US5791119A (en) * 1997-08-26 1998-08-11 Automatic Handling, Inc. Wrapping machine
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US5837576A (en) 1997-10-31 1998-11-17 Vanguard International Semiconductor Corporation Method for forming a capacitor using a silicon oxynitride etching stop layer
US6111190A (en) * 1998-03-18 2000-08-29 Entech, Inc. Inflatable fresnel lens solar concentrator for space power
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
JP3592553B2 (en) * 1998-10-15 2004-11-24 株式会社東芝 Gallium nitride based semiconductor device
US6177688B1 (en) * 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6075200A (en) * 1999-06-30 2000-06-13 Entech, Inc. Stretched Fresnel lens solar concentrator for space power
US6307243B1 (en) * 1999-07-19 2001-10-23 Micron Technology, Inc. Microlens array with improved fill factor
US6531719B2 (en) * 1999-09-29 2003-03-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
US6521324B1 (en) * 1999-11-30 2003-02-18 3M Innovative Properties Company Thermal transfer of microstructured layers
US6657236B1 (en) * 1999-12-03 2003-12-02 Cree Lighting Company Enhanced light extraction in LEDs through the use of internal and external optical elements
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6483196B1 (en) * 2000-04-03 2002-11-19 General Electric Company Flip chip led apparatus
TW445507B (en) * 2000-07-20 2001-07-11 United Epitaxy Co Ltd Roughened interface of light emitting device
AU2001292151B2 (en) 2000-08-17 2006-05-04 Tripep Ab Vaccines containing ribavirin and methods of use thereof
AU2002235132A1 (en) * 2000-11-16 2002-05-27 Emcore Corporation Led packages having improved light extraction
WO2002041362A2 (en) 2000-11-17 2002-05-23 Emcore Corporation Laser separated die with tapered sidewalls for improved light extraction
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
DE10111501B4 (en) 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component and method for its production
JP2002289904A (en) * 2001-03-23 2002-10-04 Sumitomo Electric Ind Ltd Semiconductor light-receiving element and its manufacturing method
EP1263058B1 (en) 2001-05-29 2012-04-18 Toyoda Gosei Co., Ltd. Light-emitting element
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US20030006527A1 (en) 2001-06-22 2003-01-09 Rabolt John F. Method of fabricating micron-and submicron-scale elastomeric templates for surface patterning
US7211833B2 (en) 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6747298B2 (en) 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
DE10139723A1 (en) 2001-08-13 2003-03-13 Osram Opto Semiconductors Gmbh Radiation-emitting chip and radiation-emitting component
US6804062B2 (en) 2001-10-09 2004-10-12 California Institute Of Technology Nonimaging concentrator lens arrays and microfabrication of the same
FR2844135A1 (en) 2002-09-03 2004-03-05 Corning Inc Organic light emitting diode with a stacked structure incorporates an inorganic layer with an imprinted periodic structure scaled to the wavelength of the emitting layer, for use in display screens
CA2495149A1 (en) * 2002-09-19 2004-04-01 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
US7147973B2 (en) * 2003-03-19 2006-12-12 Micron Technology, Inc. Method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect
EP1606834B1 (en) * 2003-03-27 2013-06-05 Korea Institute Of Machinery & Materials Uv nanoimprint lithography process using elementwise embossed stamp
TW200520240A (en) * 2003-10-14 2005-06-16 Showa Denko Kk Gallium nitride-based compound semiconductor light-emitting device, positive electrode for the device, light-emitting diode and lamp using the device
EP1690301B1 (en) * 2003-11-12 2012-08-15 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting diodes (leds) thereon
US20050194584A1 (en) 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7250635B2 (en) 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
KR20090005194A (en) * 2006-04-18 2009-01-12 라미나 라이팅, 인크. Optical devices for controlled color mixing

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8264138B2 (en) 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
US8310143B2 (en) 2006-08-23 2012-11-13 Cree, Inc. Lighting device and lighting method
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation

Also Published As

Publication number Publication date
US7829906B2 (en) 2010-11-09
EP1733438A1 (en) 2006-12-20
WO2005104253A1 (en) 2005-11-03
US7384809B2 (en) 2008-06-10
US7419912B2 (en) 2008-09-02
US20050227379A1 (en) 2005-10-13
US20070037307A1 (en) 2007-02-15
US8263995B2 (en) 2012-09-11
KR20070013292A (en) 2007-01-30
US20080135866A1 (en) 2008-06-12
ATE532218T1 (en) 2011-11-15
TW200534510A (en) 2005-10-16
JP2007537581A (en) 2007-12-20
US20110068351A1 (en) 2011-03-24
EP1733438B1 (en) 2011-11-02

Similar Documents

Publication Publication Date Title
WO2005104253A8 (en) Laser patterning of light emitting devices and patterned light emitting devices
WO2008091279A3 (en) Etching and hole arrays
WO2007142788A3 (en) Laser ablation resist
WO2002071150A3 (en) Lithographic template
WO2009018059A3 (en) Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures
WO2002071918A3 (en) Method for producing undercut surface recesses
WO2010042290A3 (en) Methods of utilizing block copolymer to form patterns
EP2040521A3 (en) Method of manufacturing substrate
WO2008146869A3 (en) Pattern forming method, pattern or mold formed thereby
WO2006065474A3 (en) Method for patterning by surface modification
WO2005103828A3 (en) System and method for fabricating contact holes
WO2009140094A3 (en) Method for critical dimension shrink using conformal pecvd films
WO2007068714A3 (en) Method of making a contact in a semiconductor device
TW200629412A (en) Method for defining a feature on a substrate
WO2007001855A3 (en) A method of making a metal gate semiconductor device
WO2005050700A3 (en) Line edge roughness reduction for trench etch
TW200733225A (en) Method for forming fine pattern of semiconductor device
WO2007147075A3 (en) Patterning 3d features in a substrate
TW200732828A (en) Mask blank and mask
WO2011011142A3 (en) Method and materials for reverse patterning
WO2003036686A3 (en) Method of patterning electrically conductive polymers
WO2008097278A3 (en) Etch-enhanced technique for lift-off patterning
WO2008139745A1 (en) Manufacturing method for display device and display device
TW200708886A (en) Method of forming high etch resistant resist patterns
JP4572645B2 (en) Method for manufacturing light emitting device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

DPEN Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007506145

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

WWE Wipo information: entry into national phase

Ref document number: 2005711773

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020067022764

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2005711773

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067022764

Country of ref document: KR