WO2005110915A1 - Reduction of etching charge damage in manufacture of microelectromechanical devices - Google Patents
Reduction of etching charge damage in manufacture of microelectromechanical devices Download PDFInfo
- Publication number
- WO2005110915A1 WO2005110915A1 PCT/US2005/013462 US2005013462W WO2005110915A1 WO 2005110915 A1 WO2005110915 A1 WO 2005110915A1 US 2005013462 W US2005013462 W US 2005013462W WO 2005110915 A1 WO2005110915 A1 WO 2005110915A1
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- WO
- WIPO (PCT)
- Prior art keywords
- conductive
- conductive layers
- layer
- layers together
- etch
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00563—Avoid or control over-etching
- B81C1/00579—Avoid charge built-up
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12542—More than one such component
Definitions
- MEMS Microelectromechanical system devices
- These processes may involve a series of thm films deposited in layers, the layers being patterned and etched to form the devices.
- one layer may be an isolation layer.
- An isolation layer is one that is used in forming the layers of the device acting as a structural member, but that may be removed when the device is complete. Removal of the isolation layers may involve an etching process, using a material as the etchant that only acts on the sacrificial layer mate ⁇ al. In some cases, the isolation layer may be an oxide that may be removed with a dry gas etch. Other forms of isolation layers are also possible, as are other methods of removal.
- MEMS devices typically actuate through the use of electrical signals that cause a voltage differential between a first conductive layer and a second conductive layer separated by the gap.
- an electrostatic charge may build up on the layers, causing the movable member to become attracted to the other conductive layer.
- the two layers may become stuck together and the device becomes inoperative.
- the movable element may become damaged or deformed and subsequently not operate correctly.
- Figure 1 shows an embodiment of a microelectromechanical device formed using an isolation layer.
- Figure 2 shows an embodiment of a microelectromechanical device rendered inoperable by a static charge buildup during an etch process.
- Figure 3 shows an embodiment of an apparatus to mitigate the effects of static charge buildup during an etch process.
- Figure 4 shows an alternative embodiment of an apparatus to mitigate the effects of static charge du ⁇ ng an etch process.
- Figure 5 shows a flowchart of an embodiment of a method to manufacture a microelectromechanical device.
- Figures 6a and 6b show embodiments of an alternative apparatus to mitigate the effects of static charge du ⁇ ng an etch process.
- FIG. 1 shows an example of a microelectromechanical device that is formed from thin film processes including an isolation layer.
- This particular example is of an interferometric modulator, but embodiments of the invention may be applicable to all kinds of MEMS devices that are formed from thm film processes with an isolation layer.
- the modulator is formed on a transparent substrate 10.
- An optical stack typically comp ⁇ smg layers of metal and oxides such as 12 and 14 is formed upon the substrate 10.
- a metal membrane 18 is formed upon a sac ⁇ ficial layer, not shown.
- the sacrificial layer may also be referred to as an isolation layer, as it acts to elect ⁇ cally isolate conductive layers from each other during processing.
- vias are patterned into the isolation layer to allow metal from the membrane to fill in the vias and form posts, such as 16.
- the isolation layer is removed. This allows portions of the membrane 18 to deflect towards the electrode layer 12 of the optical stack.
- the membrane 18 is attracted to the metal layer 12 by manipulation of the voltage differential between the membrane 18 and the electrode layer 12.
- the layer 12 and the membrane 18 may be metal, as discussed here, or any conductive mate ⁇ al.
- the cell formed by the portion of the membrane shown in Figure 1 is activated by applying a voltage to the conductive layer 14, which differs from the voltage of the membrane at 18.
- the conductive layers may be metal or any other conductive mate ⁇ al.
- the conductive layers may be metal or any other conductive mate ⁇ al.
- This condition is shown in Figure 2.
- This is normally the activated state of the interferometric modulator, but the difference is that the membrane does not release from the oxide layer 12 upon changing of the voltage potential
- the membrane has assumed the activated state permanently This may be caused by a combination sticking and friction, often referred to as stiction, aggravated by the electrostatic forces between the conductive layer 12 and the conductive membrane 18. Removal of the isolation layer may be achieved in many different ways.
- a dry, gas etch such as a xenon-difluo ⁇ ne (XeF ) etch.
- XeF xenon-difluo ⁇ ne
- any etch process may be used. It may be the dry environment that contributes to the build up of the electrostatic charge. However, it would be better to not have to change the materials or basis of the processes used to manufacture the MEMS devices, but instead to adapt the process to eliminate the electrostatic charge build up.
- grounding the conductive layers dunng wet etch processes as well. There may be effects on the device electrochemistry that are either enabled, if desirable, or mitigated, if undesirable, by grounding.
- the layers are grounded together, the isolation layers are removed and the grounding left in place so the devices can be safely transported without fear of electrostatic discharge. This would be helpful if the etch were a wet etch or a dry etch.
- the grounding process may be an external grounding, by an apparatus or mechanism external to the structure of the device. Alternatively, the grounding may be as part of the internal structure of the device enabled during manufacture. Initially, external grounding will be discussed.
- An apparatus for mitigating the build up of electrostatic charge during etching processes is shown in Figure 3.
- An alternative embodiment is shown in Figure 4. In Figure 3, a conductive wire 22 has been attached to the first and second conductive layers 14 and 18 to hold them at the same potential.
- the equivalent to the second conductive layer 18 in Figures 1 and 3 is actually two conductive layers 18a and 18b. They are generally deposited as two separate layers but are in physical or electrical connection with each other. This will typically result in the combination of the flex layer and the mirror layer only requiring one connection to be connecting with the other conductive layers.
- This particular formation may require two isolation layers as the equivalent of the first isolation layer, because an isolation layer may be formed between the layers 18a and 18b in addition to the one formed between layer 18a and the electrode layer 12.
- the connection between layers 18a and 18b may be formed by a via in the second portion of the first isolation layer.
- this isolation layer is not of interest in that the conductive layer deposited upon does not generally need a conductive wire to connect it to the other conductive layers.
- a second isolation layer 25 may be formed on the flex layer 18b, to provide a separation between the conductive layer 18b and a third conductive layer 26.
- the third conductive layer in this example is the bus layer, used to form a signaling bus above the flex and mirror layers to aid in addressing of the cells of the modulator. Regardless of the application or the MEMS device in which embodiments of the invention may be employed, this is just intended as an example of multiple conductive layers being electrically coupled to mitigate or eliminate the electrostatic charge build up during the etch process. Also shown in Figure 4 is an alternative to a connection between the two layers alone.
- the conductive wire 22 is attached to a ground plane, in this example the frame of the etch chamber 30. This may be more desirable than having the two or more layers electrically connected together, as they will be to a 'known' potential, that is ground. Alternatively, the conductive wires 22 and 24 could be attached to other structures. As long as the two or more layers are held at the same potential, the build up of electrostatic charge should not cause the membrane to be attracted to the conductive layer on the substrate. As mentioned previously, it is probably more desirable to use a means of avoiding or mitigating electrostatic charge build up that does not interfere with current process flows for manufacturing of MEMS devices.
- FIG. 5 An example of a method of manufacturing a MEMS device, in this case the interferometric modulator mentioned previously, is shown in flowchart form in Figure 5. It must be noted that the process flow given as a particular example in this discussion is for an interferometric modulator. However, embodiments of this invention may be applied to any MEMS device manufacturing flow having isolation layers removed by dry, gas etching.
- the interferometric modulator is built upon a transparent substrate such as glass.
- An electrode layer is deposited, patterned and etched at 32 to form electrodes for addressing the cells of the modulator.
- the optical layer is then deposited and etched at 34.
- the first isolation layer is deposited at 36, then the mirror layer at 38. In this example, the first conductive layer will be the mirror layer.
- the first conductive layer is then patterned and etched at 40.
- a second isolation layer is deposited at 42. Again, this is specific to the example of Figure 4, in which the second conductive layer is actually formed from two conductive layers, the flex layer and the mirror layer.
- the first and second isolation layers may be treated as one isolation layer, as the electrostatic charge buildup between the conductive layers on either side of the second isolation layer is not a concern.
- the flex layer is then deposited at 44, and patterned and etched at 46.
- the typical process flow is altered to include the grounding of the first and second conductive layers, in this case the electrode layer and the mirror/flex layer. For a device having two conductive layers and one effective isolation layer, the process may end at 50, with the isolation layer being removed with an etch.
- the process may instead continue at 52.
- a third isolation layer is deposited at 52 in this particular example. As discussed above, this may actually be only a second, effective isolation layer.
- the bus layer, or third conductive layer is deposited at 54, patterned and etched at 56.
- the conductive layers in this example there are three, are grounded or electrically coupled together at 58, and the isolation layers are removed at 60.
- the conductive layers may be decoupled at 62.
- the wire coupling is an example of an external process of coupling the conductive layers.
- Other external examples include using test probe structures to provide coupling between the layers, and the use of an ionized gas, where the molecules of the gas itself provides coupling between the layers.
- the process of connecting the layers together, or connecting them all to the same potential is referred to as coupling the layers. This is intended to cover the situations in which the layers are just connected together, connected together to a common potential where that potential includes ground, or connected individually to a common or same potential.
- FIG. 6a and 6b An example of an internal grounding apparatus is shown in Figures 6a and 6b.
- leads may be provided from the various layers, such as the electrode layer 12, the mechanical or mirror layer 18, and the bussing layer 26, of the device to test pads or tabs such as 76. It is possible to couple these pads together, such as by connection 74 that ties all of the pads together, as part of the conductive layer patterning and etching processes of manufacturing the devices. This would couple the conductive layers together for further processing.
Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007511399A JP4603039B2 (en) | 2004-05-04 | 2005-04-20 | Reduction of etching charge damage in the manufacture of microelectromechanical elements |
KR1020067023026A KR101162192B1 (en) | 2004-05-04 | 2005-04-20 | Reduction of etching charge damage in manufacture of microelectromechanical devices |
CN2005800139140A CN1950291B (en) | 2004-05-04 | 2005-04-20 | Reduction of etching charge damage in manufacture of microelectromechanical devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/839,329 | 2004-05-04 | ||
US10/839,329 US7476327B2 (en) | 2004-05-04 | 2004-05-04 | Method of manufacture for microelectromechanical devices |
Publications (1)
Publication Number | Publication Date |
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WO2005110915A1 true WO2005110915A1 (en) | 2005-11-24 |
Family
ID=34966567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2005/013462 WO2005110915A1 (en) | 2004-05-04 | 2005-04-20 | Reduction of etching charge damage in manufacture of microelectromechanical devices |
Country Status (6)
Country | Link |
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US (2) | US7476327B2 (en) |
JP (1) | JP4603039B2 (en) |
KR (1) | KR101162192B1 (en) |
CN (1) | CN1950291B (en) |
TW (1) | TWI286124B (en) |
WO (1) | WO2005110915A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009527371A (en) * | 2006-02-22 | 2009-07-30 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Electrical adjustment of MEMS device and its insulating layer |
JP2010521318A (en) * | 2007-02-20 | 2010-06-24 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Apparatus and method for performing MEMS etching |
Families Citing this family (123)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7532377B2 (en) * | 1998-04-08 | 2009-05-12 | Idc, Llc | Movable micro-electromechanical device |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
KR100703140B1 (en) | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | Interferometric modulation and its manufacturing method |
WO2003007049A1 (en) | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
US6574033B1 (en) | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
US7417782B2 (en) | 2005-02-23 | 2008-08-26 | Pixtronix, Incorporated | Methods and apparatus for spatial light modulation |
US7476327B2 (en) * | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
US7719500B2 (en) | 2004-09-27 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Reflective display pixels arranged in non-rectangular arrays |
US7130104B2 (en) * | 2004-09-27 | 2006-10-31 | Idc, Llc | Methods and devices for inhibiting tilting of a mirror in an interferometric modulator |
US7373026B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | MEMS device fabricated on a pre-patterned substrate |
US7564612B2 (en) * | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US7630119B2 (en) * | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US7936497B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US7369296B2 (en) | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US20060176487A1 (en) * | 2004-09-27 | 2006-08-10 | William Cummings | Process control monitors for interferometric modulators |
US7527995B2 (en) | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
US7453579B2 (en) * | 2004-09-27 | 2008-11-18 | Idc, Llc | Measurement of the dynamic characteristics of interferometric modulators |
US7343080B2 (en) * | 2004-09-27 | 2008-03-11 | Idc, Llc | System and method of testing humidity in a sealed MEMS device |
US7893919B2 (en) | 2004-09-27 | 2011-02-22 | Qualcomm Mems Technologies, Inc. | Display region architectures |
US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7289259B2 (en) * | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US7302157B2 (en) * | 2004-09-27 | 2007-11-27 | Idc, Llc | System and method for multi-level brightness in interferometric modulation |
US7417783B2 (en) | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
US7372613B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US7304784B2 (en) | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
US7999994B2 (en) | 2005-02-23 | 2011-08-16 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
US9261694B2 (en) | 2005-02-23 | 2016-02-16 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
US8482496B2 (en) | 2006-01-06 | 2013-07-09 | Pixtronix, Inc. | Circuits for controlling MEMS display apparatus on a transparent substrate |
US20070205969A1 (en) | 2005-02-23 | 2007-09-06 | Pixtronix, Incorporated | Direct-view MEMS display devices and methods for generating images thereon |
US9158106B2 (en) | 2005-02-23 | 2015-10-13 | Pixtronix, Inc. | Display methods and apparatus |
US7746529B2 (en) | 2005-02-23 | 2010-06-29 | Pixtronix, Inc. | MEMS display apparatus |
US8519945B2 (en) | 2006-01-06 | 2013-08-27 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US9082353B2 (en) | 2010-01-05 | 2015-07-14 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US8159428B2 (en) | 2005-02-23 | 2012-04-17 | Pixtronix, Inc. | Display methods and apparatus |
US9229222B2 (en) | 2005-02-23 | 2016-01-05 | Pixtronix, Inc. | Alignment methods in fluid-filled MEMS displays |
US8310442B2 (en) | 2005-02-23 | 2012-11-13 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US7884989B2 (en) | 2005-05-27 | 2011-02-08 | Qualcomm Mems Technologies, Inc. | White interferometric modulators and methods for forming the same |
US7460292B2 (en) * | 2005-06-03 | 2008-12-02 | Qualcomm Mems Technologies, Inc. | Interferometric modulator with internal polarization and drive method |
EP2495212A3 (en) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
EP1949009B8 (en) | 2005-10-27 | 2020-06-03 | LG Electronics Inc. | Refrigerator |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7382515B2 (en) | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
US7652814B2 (en) | 2006-01-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | MEMS device with integrated optical element |
US8526096B2 (en) | 2006-02-23 | 2013-09-03 | Pixtronix, Inc. | Mechanical light modulators with stressed beams |
US7643203B2 (en) | 2006-04-10 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Interferometric optical display system with broadband characteristics |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US7369292B2 (en) | 2006-05-03 | 2008-05-06 | Qualcomm Mems Technologies, Inc. | Electrode and interconnect materials for MEMS devices |
US20070268201A1 (en) * | 2006-05-22 | 2007-11-22 | Sampsell Jeffrey B | Back-to-back displays |
US7649671B2 (en) * | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7876489B2 (en) | 2006-06-05 | 2011-01-25 | Pixtronix, Inc. | Display apparatus with optical cavities |
US7835061B2 (en) | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7629197B2 (en) * | 2006-10-18 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Spatial light modulator |
WO2008051362A1 (en) | 2006-10-20 | 2008-05-02 | Pixtronix, Inc. | Light guides and backlight systems incorporating light redirectors at varying densities |
US7684106B2 (en) * | 2006-11-02 | 2010-03-23 | Qualcomm Mems Technologies, Inc. | Compatible MEMS switch architecture |
US7706042B2 (en) | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US7852546B2 (en) | 2007-10-19 | 2010-12-14 | Pixtronix, Inc. | Spacers for maintaining display apparatus alignment |
US9176318B2 (en) | 2007-05-18 | 2015-11-03 | Pixtronix, Inc. | Methods for manufacturing fluid-filled MEMS displays |
US8115987B2 (en) | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
US7733552B2 (en) | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
US7742220B2 (en) | 2007-03-28 | 2010-06-22 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing conducting layers separated by stops |
US7643202B2 (en) | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US7715085B2 (en) | 2007-05-09 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | Electromechanical system having a dielectric movable membrane and a mirror |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7643199B2 (en) * | 2007-06-19 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | High aperture-ratio top-reflective AM-iMod displays |
US7782517B2 (en) | 2007-06-21 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Infrared and dual mode displays |
US7630121B2 (en) * | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US8068268B2 (en) | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
JP2010538306A (en) * | 2007-07-31 | 2010-12-09 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Device for increasing the color shift of interferometric modulators |
US8072402B2 (en) | 2007-08-29 | 2011-12-06 | Qualcomm Mems Technologies, Inc. | Interferometric optical modulator with broadband reflection characteristics |
US7718458B2 (en) * | 2007-09-11 | 2010-05-18 | Xerox Corporation | Electric field concentration minimization for MEMS |
US7773286B2 (en) | 2007-09-14 | 2010-08-10 | Qualcomm Mems Technologies, Inc. | Periodic dimple array |
US7847999B2 (en) | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
US8058549B2 (en) * | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
KR20100090257A (en) * | 2007-10-19 | 2010-08-13 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Display with integrated photovoltaic device |
US8054527B2 (en) * | 2007-10-23 | 2011-11-08 | Qualcomm Mems Technologies, Inc. | Adjustably transmissive MEMS-based devices |
US20090293955A1 (en) * | 2007-11-07 | 2009-12-03 | Qualcomm Incorporated | Photovoltaics with interferometric masks |
US8941631B2 (en) * | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US7715079B2 (en) | 2007-12-07 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | MEMS devices requiring no mechanical support |
RU2485626C2 (en) * | 2007-12-21 | 2013-06-20 | Квалкомм Мемс Текнолоджис, Инк. | Multijunction photovoltaic cells |
US7863079B2 (en) | 2008-02-05 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Methods of reducing CD loss in a microelectromechanical device |
US8164821B2 (en) | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
US7944604B2 (en) | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7612933B2 (en) * | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
US7898723B2 (en) | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
US7969638B2 (en) | 2008-04-10 | 2011-06-28 | Qualcomm Mems Technologies, Inc. | Device having thin black mask and method of fabricating the same |
US8248560B2 (en) | 2008-04-18 | 2012-08-21 | Pixtronix, Inc. | Light guides and backlight systems incorporating prismatic structures and light redirectors |
US8853797B2 (en) * | 2008-05-12 | 2014-10-07 | Nxp, B.V | MEMS devices and fabrication thereof |
US7795056B2 (en) * | 2008-06-03 | 2010-09-14 | United Microelectronics Corp. | Semiconductor device and method of fabricating the same |
US7768690B2 (en) | 2008-06-25 | 2010-08-03 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7746539B2 (en) | 2008-06-25 | 2010-06-29 | Qualcomm Mems Technologies, Inc. | Method for packing a display device and the device obtained thereof |
US8023167B2 (en) | 2008-06-25 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7859740B2 (en) * | 2008-07-11 | 2010-12-28 | Qualcomm Mems Technologies, Inc. | Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control |
US7855826B2 (en) | 2008-08-12 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices |
US8358266B2 (en) * | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
US20100096006A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | Monolithic imod color enhanced photovoltaic cell |
US20100096011A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | High efficiency interferometric color filters for photovoltaic modules |
US8169679B2 (en) | 2008-10-27 | 2012-05-01 | Pixtronix, Inc. | MEMS anchors |
US8270056B2 (en) * | 2009-03-23 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with openings between sub-pixels and method of making same |
WO2010138763A1 (en) * | 2009-05-29 | 2010-12-02 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
US8270062B2 (en) * | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
US8488228B2 (en) * | 2009-09-28 | 2013-07-16 | Qualcomm Mems Technologies, Inc. | Interferometric display with interferometric reflector |
JP2013519121A (en) | 2010-02-02 | 2013-05-23 | ピクストロニックス・インコーポレーテッド | Method for manufacturing a cold sealed fluid filled display device |
CN102834859B (en) | 2010-02-02 | 2015-06-03 | 皮克斯特罗尼克斯公司 | Circuits for controlling display apparatus |
JP5463961B2 (en) * | 2010-03-04 | 2014-04-09 | 富士通株式会社 | Method for manufacturing MEMS device and MEMS device |
US8547626B2 (en) * | 2010-03-25 | 2013-10-01 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of shaping the same |
CN102834761A (en) | 2010-04-09 | 2012-12-19 | 高通Mems科技公司 | Mechanical layer and methods of forming the same |
CN103038568A (en) | 2010-04-16 | 2013-04-10 | 弗莱克斯照明第二有限责任公司 | Front illumination device comprising a film-based lightguide |
JP2013525955A (en) | 2010-04-16 | 2013-06-20 | フレックス ライティング 2,エルエルシー | Lighting device with film-based light guide |
WO2012024238A1 (en) | 2010-08-17 | 2012-02-23 | Qualcomm Mems Technologies, Inc. | Actuation and calibration of a charge neutral electrode in an interferometric display device |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
US9001031B2 (en) * | 2012-07-30 | 2015-04-07 | Qualcomm Mems Technologies, Inc. | Complex passive design with special via implementation |
US10046964B2 (en) | 2013-03-07 | 2018-08-14 | MCube Inc. | MEMS structure with improved shielding and method |
US9134552B2 (en) | 2013-03-13 | 2015-09-15 | Pixtronix, Inc. | Display apparatus with narrow gap electrostatic actuators |
TWI508914B (en) * | 2013-10-11 | 2015-11-21 | Pixart Imaging Inc | Micro-electro-mechanical device with enhanced structural strength |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5096279A (en) * | 1984-08-31 | 1992-03-17 | Texas Instruments Incorporated | Spatial light modulator and method |
US20020111031A1 (en) * | 2001-02-14 | 2002-08-15 | Chase Troy A. | Deep reactive ion etching process and microelectromechanical devices formed thereby |
US20020158348A1 (en) * | 2001-04-27 | 2002-10-31 | Motorola, Inc. | Semiconductor structure and method for reducing charge damage |
US20040008402A1 (en) * | 2000-08-11 | 2004-01-15 | Patel Satyadev R. | Micromirrors with mechanisms for enhancing coupling of the micromirrors with electrostatic fields |
Family Cites Families (298)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US441791A (en) * | 1890-12-02 | davis | ||
US2534846A (en) | 1946-06-20 | 1950-12-19 | Emi Ltd | Color filter |
US3296530A (en) | 1962-09-28 | 1967-01-03 | Lockheed Aircraft Corp | Voltage controlled electroluminescent meter display |
DE1288651B (en) | 1963-06-28 | 1969-02-06 | Siemens Ag | Arrangement of electrical dipoles for wavelengths below 1 mm and method for producing such an arrangement |
FR1603131A (en) | 1968-07-05 | 1971-03-22 | ||
US3653741A (en) | 1970-02-16 | 1972-04-04 | Alvin M Marks | Electro-optical dipolar material |
US3813265A (en) | 1970-02-16 | 1974-05-28 | A Marks | Electro-optical dipolar material |
DE10127319B4 (en) * | 2001-06-06 | 2004-03-18 | Andrea Burkhardt | Wellness equipment |
US3728030A (en) | 1970-06-22 | 1973-04-17 | Cary Instruments | Polarization interferometer |
US3725868A (en) | 1970-10-19 | 1973-04-03 | Burroughs Corp | Small reconfigurable processor for a variety of data processing applications |
JPS4946974A (en) | 1972-09-11 | 1974-05-07 | ||
DE2336930A1 (en) | 1973-07-20 | 1975-02-06 | Battelle Institut E V | INFRARED MODULATOR (II.) |
US4099854A (en) | 1976-10-12 | 1978-07-11 | The Unites States Of America As Represented By The Secretary Of The Navy | Optical notch filter utilizing electric dipole resonance absorption |
US4196396A (en) | 1976-10-15 | 1980-04-01 | Bell Telephone Laboratories, Incorporated | Interferometer apparatus using electro-optic material with feedback |
US4389096A (en) | 1977-12-27 | 1983-06-21 | Matsushita Electric Industrial Co., Ltd. | Image display apparatus of liquid crystal valve projection type |
US4663083A (en) | 1978-05-26 | 1987-05-05 | Marks Alvin M | Electro-optical dipole suspension with reflective-absorptive-transmissive characteristics |
US4445050A (en) | 1981-12-15 | 1984-04-24 | Marks Alvin M | Device for conversion of light power to electric power |
US4228437A (en) | 1979-06-26 | 1980-10-14 | The United States Of America As Represented By The Secretary Of The Navy | Wideband polarization-transforming electromagnetic mirror |
NL8001281A (en) | 1980-03-04 | 1981-10-01 | Philips Nv | DISPLAY DEVICE. |
DE3012253A1 (en) | 1980-03-28 | 1981-10-15 | Hoechst Ag, 6000 Frankfurt | METHOD FOR VISIBLE MASKING OF CARGO IMAGES AND A DEVICE SUITABLE FOR THIS |
JPS56161676A (en) | 1980-05-16 | 1981-12-12 | Japan Electronic Ind Dev Assoc<Jeida> | Electrode structure for thin film transistor |
US4377324A (en) * | 1980-08-04 | 1983-03-22 | Honeywell Inc. | Graded index Fabry-Perot optical filter device |
US4441791A (en) | 1980-09-02 | 1984-04-10 | Texas Instruments Incorporated | Deformable mirror light modulator |
FR2506026A1 (en) | 1981-05-18 | 1982-11-19 | Radant Etudes | METHOD AND DEVICE FOR ANALYZING A HYPERFREQUENCY ELECTROMAGNETIC WAVE RADIATION BEAM |
NL8103377A (en) | 1981-07-16 | 1983-02-16 | Philips Nv | DISPLAY DEVICE. |
US4571603A (en) * | 1981-11-03 | 1986-02-18 | Texas Instruments Incorporated | Deformable mirror electrostatic printer |
NL8200354A (en) | 1982-02-01 | 1983-09-01 | Philips Nv | PASSIVE DISPLAY. |
US4500171A (en) * | 1982-06-02 | 1985-02-19 | Texas Instruments Incorporated | Process for plastic LCD fill hole sealing |
US4482213A (en) | 1982-11-23 | 1984-11-13 | Texas Instruments Incorporated | Perimeter seal reinforcement holes for plastic LCDs |
JPS60159731A (en) | 1984-01-30 | 1985-08-21 | Sharp Corp | Liquid crystal display body |
US4710732A (en) | 1984-07-31 | 1987-12-01 | Texas Instruments Incorporated | Spatial light modulator and method |
US4566935A (en) * | 1984-07-31 | 1986-01-28 | Texas Instruments Incorporated | Spatial light modulator and method |
US4596992A (en) | 1984-08-31 | 1986-06-24 | Texas Instruments Incorporated | Linear spatial light modulator and printer |
US4662746A (en) | 1985-10-30 | 1987-05-05 | Texas Instruments Incorporated | Spatial light modulator and method |
US5061049A (en) | 1984-08-31 | 1991-10-29 | Texas Instruments Incorporated | Spatial light modulator and method |
US4615595A (en) | 1984-10-10 | 1986-10-07 | Texas Instruments Incorporated | Frame addressed spatial light modulator |
US4672254A (en) | 1985-10-11 | 1987-06-09 | Massachusetts Institute Of Technology | Surface acoustic wave devices and method of manufacture thereof |
US5172262A (en) | 1985-10-30 | 1992-12-15 | Texas Instruments Incorporated | Spatial light modulator and method |
US4859060A (en) | 1985-11-26 | 1989-08-22 | 501 Sharp Kabushiki Kaisha | Variable interferometric device and a process for the production of the same |
FR2597621A1 (en) | 1986-04-22 | 1987-10-23 | Thomson Csf | NETWORK OF DIFFUSING ELEMENTS OF ELECTROMAGNETIC ENERGY WITH OPTICAL CONTROL |
GB8610129D0 (en) | 1986-04-25 | 1986-05-29 | Secr Defence | Electro-optical device |
US4748366A (en) | 1986-09-02 | 1988-05-31 | Taylor George W | Novel uses of piezoelectric materials for creating optical effects |
US4786128A (en) | 1986-12-02 | 1988-11-22 | Quantum Diagnostics, Ltd. | Device for modulating and reflecting electromagnetic radiation employing electro-optic layer having a variable index of refraction |
NL8701138A (en) | 1987-05-13 | 1988-12-01 | Philips Nv | ELECTROSCOPIC IMAGE DISPLAY. |
DE3716485C1 (en) | 1987-05-16 | 1988-11-24 | Heraeus Gmbh W C | Xenon short-arc discharge lamp |
US5091983A (en) | 1987-06-04 | 1992-02-25 | Walter Lukosz | Optical modulation apparatus and measurement method |
US4900136A (en) * | 1987-08-11 | 1990-02-13 | North American Philips Corporation | Method of metallizing silica-containing gel and solid state light modulator incorporating the metallized gel |
US4857978A (en) | 1987-08-11 | 1989-08-15 | North American Philips Corporation | Solid state light modulator incorporating metallized gel and method of metallization |
US5014259A (en) | 1988-02-05 | 1991-05-07 | Tandy Corporation | Recording medium having an insulating layer |
US4956619A (en) | 1988-02-19 | 1990-09-11 | Texas Instruments Incorporated | Spatial light modulator |
EP0332953B1 (en) * | 1988-03-16 | 1993-09-15 | Texas Instruments Incorporated | Spatial light modulator and method |
SE8801299L (en) | 1988-04-08 | 1989-10-09 | Bertil Hoeoek | MICROMECHANICAL ONE-WAY VALVE |
US4880493A (en) | 1988-06-16 | 1989-11-14 | The United States Of America As Represented By The United States Department Of Energy | Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication |
US4856863A (en) | 1988-06-22 | 1989-08-15 | Texas Instruments Incorporated | Optical fiber interconnection network including spatial light modulator |
US5028939A (en) | 1988-08-23 | 1991-07-02 | Texas Instruments Incorporated | Spatial light modulator system |
JP2700903B2 (en) * | 1988-09-30 | 1998-01-21 | シャープ株式会社 | Liquid crystal display |
US4982184A (en) * | 1989-01-03 | 1991-01-01 | General Electric Company | Electrocrystallochromic display and element |
US5214420A (en) | 1989-02-27 | 1993-05-25 | Texas Instruments Incorporated | Spatial light modulator projection system with random polarity light |
US5214419A (en) | 1989-02-27 | 1993-05-25 | Texas Instruments Incorporated | Planarized true three dimensional display |
US5162787A (en) | 1989-02-27 | 1992-11-10 | Texas Instruments Incorporated | Apparatus and method for digitized video system utilizing a moving display surface |
US5272473A (en) | 1989-02-27 | 1993-12-21 | Texas Instruments Incorporated | Reduced-speckle display system |
US5192946A (en) * | 1989-02-27 | 1993-03-09 | Texas Instruments Incorporated | Digitized color video display system |
US5079544A (en) * | 1989-02-27 | 1992-01-07 | Texas Instruments Incorporated | Standard independent digitized video system |
US5287096A (en) * | 1989-02-27 | 1994-02-15 | Texas Instruments Incorporated | Variable luminosity display system |
US5170156A (en) | 1989-02-27 | 1992-12-08 | Texas Instruments Incorporated | Multi-frequency two dimensional display system |
US5206629A (en) | 1989-02-27 | 1993-04-27 | Texas Instruments Incorporated | Spatial light modulator and memory for digitized video display |
US4900395A (en) * | 1989-04-07 | 1990-02-13 | Fsi International, Inc. | HF gas etching of wafers in an acid processor |
US5022745A (en) | 1989-09-07 | 1991-06-11 | Massachusetts Institute Of Technology | Electrostatically deformable single crystal dielectrically coated mirror |
US4954789A (en) | 1989-09-28 | 1990-09-04 | Texas Instruments Incorporated | Spatial light modulator |
US5381253A (en) * | 1991-11-14 | 1995-01-10 | Board Of Regents Of University Of Colorado | Chiral smectic liquid crystal optical modulators having variable retardation |
US5124834A (en) | 1989-11-16 | 1992-06-23 | General Electric Company | Transferrable, self-supporting pellicle for elastomer light valve displays and method for making the same |
US5037173A (en) | 1989-11-22 | 1991-08-06 | Texas Instruments Incorporated | Optical interconnection network |
JP2910114B2 (en) | 1990-01-20 | 1999-06-23 | ソニー株式会社 | Electronics |
US5500635A (en) * | 1990-02-20 | 1996-03-19 | Mott; Jonathan C. | Products incorporating piezoelectric material |
CH682523A5 (en) * | 1990-04-20 | 1993-09-30 | Suisse Electronique Microtech | A modulation matrix addressed light. |
US5002745A (en) * | 1990-05-07 | 1991-03-26 | Fmc Corporation | Method of separating and recovering phosphorus from phosphorus sludge |
GB9012099D0 (en) | 1990-05-31 | 1990-07-18 | Kodak Ltd | Optical article for multicolour imaging |
US5018256A (en) | 1990-06-29 | 1991-05-28 | Texas Instruments Incorporated | Architecture and process for integrating DMD with control circuit substrates |
US5083857A (en) * | 1990-06-29 | 1992-01-28 | Texas Instruments Incorporated | Multi-level deformable mirror device |
EP0467048B1 (en) * | 1990-06-29 | 1995-09-20 | Texas Instruments Incorporated | Field-updated deformable mirror device |
US5142405A (en) | 1990-06-29 | 1992-08-25 | Texas Instruments Incorporated | Bistable dmd addressing circuit and method |
US5099353A (en) * | 1990-06-29 | 1992-03-24 | Texas Instruments Incorporated | Architecture and process for integrating DMD with control circuit substrates |
US5216537A (en) | 1990-06-29 | 1993-06-01 | Texas Instruments Incorporated | Architecture and process for integrating DMD with control circuit substrates |
US5153771A (en) | 1990-07-18 | 1992-10-06 | Northrop Corporation | Coherent light modulation and detector |
US5192395A (en) * | 1990-10-12 | 1993-03-09 | Texas Instruments Incorporated | Method of making a digital flexure beam accelerometer |
US5044736A (en) | 1990-11-06 | 1991-09-03 | Motorola, Inc. | Configurable optical filter or display |
US5331454A (en) | 1990-11-13 | 1994-07-19 | Texas Instruments Incorporated | Low reset voltage process for DMD |
US5602671A (en) * | 1990-11-13 | 1997-02-11 | Texas Instruments Incorporated | Low surface energy passivation layer for micromechanical devices |
US5233459A (en) | 1991-03-06 | 1993-08-03 | Massachusetts Institute Of Technology | Electric display device |
US5136669A (en) | 1991-03-15 | 1992-08-04 | Sperry Marine Inc. | Variable ratio fiber optic coupler optical signal processing element |
CA2063744C (en) * | 1991-04-01 | 2002-10-08 | Paul M. Urbanus | Digital micromirror device architecture and timing for use in a pulse-width modulated display system |
US5142414A (en) | 1991-04-22 | 1992-08-25 | Koehler Dale R | Electrically actuatable temporal tristimulus-color device |
US5226099A (en) | 1991-04-26 | 1993-07-06 | Texas Instruments Incorporated | Digital micromirror shutter device |
US5179274A (en) * | 1991-07-12 | 1993-01-12 | Texas Instruments Incorporated | Method for controlling operation of optical systems and devices |
US5287215A (en) | 1991-07-17 | 1994-02-15 | Optron Systems, Inc. | Membrane light modulation systems |
US5170283A (en) | 1991-07-24 | 1992-12-08 | Northrop Corporation | Silicon spatial light modulator |
US5240818A (en) | 1991-07-31 | 1993-08-31 | Texas Instruments Incorporated | Method for manufacturing a color filter for deformable mirror device |
US5168406A (en) | 1991-07-31 | 1992-12-01 | Texas Instruments Incorporated | Color deformable mirror device and method for manufacture |
US5254980A (en) | 1991-09-06 | 1993-10-19 | Texas Instruments Incorporated | DMD display system controller |
US5315370A (en) | 1991-10-23 | 1994-05-24 | Bulow Jeffrey A | Interferometric modulator for optical signal processing |
US5233385A (en) | 1991-12-18 | 1993-08-03 | Texas Instruments Incorporated | White light enhanced color field sequential projection |
US5233456A (en) | 1991-12-20 | 1993-08-03 | Texas Instruments Incorporated | Resonant mirror and method of manufacture |
US5228013A (en) | 1992-01-10 | 1993-07-13 | Bik Russell J | Clock-painting device and method for indicating the time-of-day with a non-traditional, now analog artistic panel of digital electronic visual displays |
US5296950A (en) * | 1992-01-31 | 1994-03-22 | Texas Instruments Incorporated | Optical signal free-space conversion board |
US5231532A (en) | 1992-02-05 | 1993-07-27 | Texas Instruments Incorporated | Switchable resonant filter for optical radiation |
US5212582A (en) | 1992-03-04 | 1993-05-18 | Texas Instruments Incorporated | Electrostatically controlled beam steering device and method |
EP0562424B1 (en) | 1992-03-25 | 1997-05-28 | Texas Instruments Incorporated | Embedded optical calibration system |
US5312513A (en) | 1992-04-03 | 1994-05-17 | Texas Instruments Incorporated | Methods of forming multiple phase light modulators |
US5401983A (en) * | 1992-04-08 | 1995-03-28 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices |
US5311360A (en) | 1992-04-28 | 1994-05-10 | The Board Of Trustees Of The Leland Stanford, Junior University | Method and apparatus for modulating a light beam |
TW245772B (en) * | 1992-05-19 | 1995-04-21 | Akzo Nv | |
JPH0651250A (en) * | 1992-05-20 | 1994-02-25 | Texas Instr Inc <Ti> | Monolithic space optical modulator and memory package |
US5818095A (en) | 1992-08-11 | 1998-10-06 | Texas Instruments Incorporated | High-yield spatial light modulator with light blocking layer |
US5345328A (en) | 1992-08-12 | 1994-09-06 | Sandia Corporation | Tandem resonator reflectance modulator |
US5293272A (en) * | 1992-08-24 | 1994-03-08 | Physical Optics Corporation | High finesse holographic fabry-perot etalon and method of fabricating |
US5327286A (en) | 1992-08-31 | 1994-07-05 | Texas Instruments Incorporated | Real time optical correlation system |
US5325116A (en) | 1992-09-18 | 1994-06-28 | Texas Instruments Incorporated | Device for writing to and reading from optical storage media |
US5296775A (en) | 1992-09-24 | 1994-03-22 | International Business Machines Corporation | Cooling microfan arrangements and process |
US5285196A (en) | 1992-10-15 | 1994-02-08 | Texas Instruments Incorporated | Bistable DMD addressing method |
US5374792A (en) | 1993-01-04 | 1994-12-20 | General Electric Company | Micromechanical moving structures including multiple contact switching system |
FI96450C (en) | 1993-01-13 | 1996-06-25 | Vaisala Oy | Single-channel gas concentration measurement method and equipment |
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7830587B2 (en) | 1993-03-17 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with semiconductor substrate |
US5559358A (en) | 1993-05-25 | 1996-09-24 | Honeywell Inc. | Opto-electro-mechanical device or filter, process for making, and sensors made therefrom |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
US5489952A (en) * | 1993-07-14 | 1996-02-06 | Texas Instruments Incorporated | Method and device for multi-format television |
US5510824A (en) * | 1993-07-26 | 1996-04-23 | Texas Instruments, Inc. | Spatial light modulator array |
US5526172A (en) | 1993-07-27 | 1996-06-11 | Texas Instruments Incorporated | Microminiature, monolithic, variable electrical signal processor and apparatus including same |
US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
US5497197A (en) * | 1993-11-04 | 1996-03-05 | Texas Instruments Incorporated | System and method for packaging data into video processor |
US5500761A (en) * | 1994-01-27 | 1996-03-19 | At&T Corp. | Micromechanical modulator |
FI94804C (en) | 1994-02-17 | 1995-10-25 | Vaisala Oy | Electrically adjustable surface micromechanical Fabry-Perot interferometer for optical material analysis |
US5665997A (en) | 1994-03-31 | 1997-09-09 | Texas Instruments Incorporated | Grated landing area to eliminate sticking of micro-mechanical devices |
US6680792B2 (en) * | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
US8081369B2 (en) | 1994-05-05 | 2011-12-20 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7460291B2 (en) | 1994-05-05 | 2008-12-02 | Idc, Llc | Separable modulator |
US7808694B2 (en) | 1994-05-05 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7852545B2 (en) | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US6040937A (en) | 1994-05-05 | 2000-03-21 | Etalon, Inc. | Interferometric modulation |
US20010003487A1 (en) | 1996-11-05 | 2001-06-14 | Mark W. Miles | Visible spectrum modulator arrays |
US7550794B2 (en) * | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
US6710908B2 (en) * | 1994-05-05 | 2004-03-23 | Iridigm Display Corporation | Controlling micro-electro-mechanical cavities |
US7738157B2 (en) | 1994-05-05 | 2010-06-15 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7123216B1 (en) | 1994-05-05 | 2006-10-17 | Idc, Llc | Photonic MEMS and structures |
US7826120B2 (en) | 1994-05-05 | 2010-11-02 | Qualcomm Mems Technologies, Inc. | Method and device for multi-color interferometric modulation |
US5497172A (en) * | 1994-06-13 | 1996-03-05 | Texas Instruments Incorporated | Pulse width modulation for spatial light modulator with split reset addressing |
US5920418A (en) | 1994-06-21 | 1999-07-06 | Matsushita Electric Industrial Co., Ltd. | Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical modulator and method for producing the same, and display device including such a diffractive optical modulator |
US5499062A (en) * | 1994-06-23 | 1996-03-12 | Texas Instruments Incorporated | Multiplexed memory timing with block reset and secondary memory |
US5485304A (en) | 1994-07-29 | 1996-01-16 | Texas Instruments, Inc. | Support posts for micro-mechanical devices |
US5636052A (en) | 1994-07-29 | 1997-06-03 | Lucent Technologies Inc. | Direct view display based on a micromechanical modulation |
US5526951A (en) | 1994-09-30 | 1996-06-18 | Texas Instruments Incorporated | Fabrication method for digital micro-mirror devices using low temperature CVD |
US5528707A (en) | 1994-09-30 | 1996-06-18 | Honeywell Inc. | Bidirectional optical modulator having lightwave signal conservation |
US5795208A (en) | 1994-10-11 | 1998-08-18 | Yamaha Corporation | Manufacture of electron emitter by replica technique |
DE4437259C1 (en) | 1994-10-18 | 1995-10-19 | Siemens Ag | Micro-mechanical electrostatic relay with spiral contact spring bars |
US5610624A (en) * | 1994-11-30 | 1997-03-11 | Texas Instruments Incorporated | Spatial light modulator with reduced possibility of an on state defect |
US5726480A (en) * | 1995-01-27 | 1998-03-10 | The Regents Of The University Of California | Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same |
US5610438A (en) * | 1995-03-08 | 1997-03-11 | Texas Instruments Incorporated | Micro-mechanical device with non-evaporable getter |
US5661592A (en) | 1995-06-07 | 1997-08-26 | Silicon Light Machines | Method of making and an apparatus for a flat diffraction grating light valve |
US6046840A (en) * | 1995-06-19 | 2000-04-04 | Reflectivity, Inc. | Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements |
US6324192B1 (en) | 1995-09-29 | 2001-11-27 | Coretek, Inc. | Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same |
JPH09127551A (en) | 1995-10-31 | 1997-05-16 | Sharp Corp | Semiconductor device and active matrix substrate |
US5999306A (en) | 1995-12-01 | 1999-12-07 | Seiko Epson Corporation | Method of manufacturing spatial light modulator and electronic device employing it |
JPH11510219A (en) | 1995-12-19 | 1999-09-07 | エフエスアイ インターナショナル インコーポレイテッド | Electroless plating of metal films using a spray processor. |
US5825528A (en) | 1995-12-26 | 1998-10-20 | Lucent Technologies Inc. | Phase-mismatched fabry-perot cavity micromechanical modulator |
US5771321A (en) | 1996-01-04 | 1998-06-23 | Massachusetts Institute Of Technology | Micromechanical optical switch and flat panel display |
US5638946A (en) | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
US5751469A (en) | 1996-02-01 | 1998-05-12 | Lucent Technologies Inc. | Method and apparatus for an improved micromechanical modulator |
US5710656A (en) * | 1996-07-30 | 1998-01-20 | Lucent Technologies Inc. | Micromechanical optical modulator having a reduced-mass composite membrane |
US5838484A (en) | 1996-08-19 | 1998-11-17 | Lucent Technologies Inc. | Micromechanical optical modulator with linear operating characteristic |
GB9619781D0 (en) | 1996-09-23 | 1996-11-06 | Secr Defence | Multi layer interference coatings |
JPH10188319A (en) | 1996-12-26 | 1998-07-21 | Sharp Corp | Deformable mirror and optical recording and reproducing device using the same |
US6028689A (en) | 1997-01-24 | 2000-02-22 | The United States Of America As Represented By The Secretary Of The Air Force | Multi-motion micromirror |
US5881449A (en) | 1997-02-28 | 1999-03-16 | Eastman Kodak Company | Method of making a microceramic electromagnetic light shutter |
US5786927A (en) | 1997-03-12 | 1998-07-28 | Lucent Technologies Inc. | Gas-damped micromechanical structure |
US6384952B1 (en) | 1997-03-27 | 2002-05-07 | Mems Optical Inc. | Vertical comb drive actuated deformable mirror device and method |
DE69806846T2 (en) * | 1997-05-08 | 2002-12-12 | Texas Instruments Inc | Improvements for spatial light modulators |
US5867302A (en) * | 1997-08-07 | 1999-02-02 | Sandia Corporation | Bistable microelectromechanical actuator |
US6028690A (en) * | 1997-11-26 | 2000-02-22 | Texas Instruments Incorporated | Reduced micromirror mirror gaps for improved contrast ratio |
US6180428B1 (en) * | 1997-12-12 | 2001-01-30 | Xerox Corporation | Monolithic scanning light emitting devices using micromachining |
KR100604621B1 (en) | 1998-01-20 | 2006-07-28 | 세이코 엡슨 가부시키가이샤 | Optical switching device, control method thereof and image display device |
US5914804A (en) | 1998-01-28 | 1999-06-22 | Lucent Technologies Inc | Double-cavity micromechanical optical modulator with plural multilayer mirrors |
US6195196B1 (en) * | 1998-03-13 | 2001-02-27 | Fuji Photo Film Co., Ltd. | Array-type exposing device and flat type display incorporating light modulator and driving method thereof |
US6262697B1 (en) | 1998-03-20 | 2001-07-17 | Eastman Kodak Company | Display having viewable and conductive images |
US7532377B2 (en) | 1998-04-08 | 2009-05-12 | Idc, Llc | Movable micro-electromechanical device |
KR100703140B1 (en) | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | Interferometric modulation and its manufacturing method |
JP4520545B2 (en) | 1998-04-17 | 2010-08-04 | セイコーインスツル株式会社 | Reflective liquid crystal display device and manufacturing method thereof |
US5949571A (en) | 1998-07-30 | 1999-09-07 | Lucent Technologies | Mars optical modulators |
JP4074714B2 (en) * | 1998-09-25 | 2008-04-09 | 富士フイルム株式会社 | Array type light modulation element and flat display driving method |
JP3919954B2 (en) | 1998-10-16 | 2007-05-30 | 富士フイルム株式会社 | Array type light modulation element and flat display driving method |
US6171945B1 (en) * | 1998-10-22 | 2001-01-09 | Applied Materials, Inc. | CVD nanoporous silica low dielectric constant films |
US6335831B2 (en) * | 1998-12-18 | 2002-01-01 | Eastman Kodak Company | Multilevel mechanical grating device |
JP3119255B2 (en) | 1998-12-22 | 2000-12-18 | 日本電気株式会社 | Micromachine switch and method of manufacturing the same |
US6154586A (en) | 1998-12-24 | 2000-11-28 | Jds Fitel Inc. | Optical switch mechanism |
US6358021B1 (en) * | 1998-12-29 | 2002-03-19 | Honeywell International Inc. | Electrostatic actuators for active surfaces |
US6201633B1 (en) * | 1999-06-07 | 2001-03-13 | Xerox Corporation | Micro-electromechanical based bistable color display sheets |
US6535663B1 (en) | 1999-07-20 | 2003-03-18 | Memlink Ltd. | Microelectromechanical device with moving element |
US6713374B2 (en) | 1999-07-30 | 2004-03-30 | Formfactor, Inc. | Interconnect assemblies and methods |
US6525310B2 (en) * | 1999-08-05 | 2003-02-25 | Microvision, Inc. | Frequency tunable resonant scanner |
WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
US6674090B1 (en) * | 1999-12-27 | 2004-01-06 | Xerox Corporation | Structure and method for planar lateral oxidation in active |
KR100660813B1 (en) * | 1999-12-31 | 2006-12-26 | 엘지.필립스 엘시디 주식회사 | method for fabricating array substrate for x-ray detector |
US6307663B1 (en) | 2000-01-26 | 2001-10-23 | Eastman Kodak Company | Spatial light modulator with conformal grating device |
US6407851B1 (en) | 2000-08-01 | 2002-06-18 | Mohammed N. Islam | Micromechanical optical switch |
JP2001221913A (en) | 2000-02-08 | 2001-08-17 | Yokogawa Electric Corp | Fabry-perot filter and ir gas analyzer |
KR20010112456A (en) | 2000-02-24 | 2001-12-20 | 요트.게.아. 롤페즈 | Display device comprising a light guide |
US6836366B1 (en) | 2000-03-03 | 2004-12-28 | Axsun Technologies, Inc. | Integrated tunable fabry-perot filter and method of making same |
US6698295B1 (en) | 2000-03-31 | 2004-03-02 | Shipley Company, L.L.C. | Microstructures comprising silicon nitride layer and thin conductive polysilicon layer |
EP1720347B1 (en) | 2000-07-03 | 2010-06-23 | Sony Corporation | Optical multilayer structure, optical switching device, and image display |
EP1172681A3 (en) * | 2000-07-13 | 2004-06-09 | Creo IL. Ltd. | Blazed micro-mechanical light modulator and array thereof |
US6853129B1 (en) * | 2000-07-28 | 2005-02-08 | Candescent Technologies Corporation | Protected substrate structure for a field emission display device |
JP2002062490A (en) | 2000-08-14 | 2002-02-28 | Canon Inc | Interferrometric modulation device |
US6376787B1 (en) | 2000-08-24 | 2002-04-23 | Texas Instruments Incorporated | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer |
JP4304852B2 (en) * | 2000-09-04 | 2009-07-29 | コニカミノルタホールディングス株式会社 | Non-flat liquid crystal display element and method for manufacturing the same |
US6466354B1 (en) | 2000-09-19 | 2002-10-15 | Silicon Light Machines | Method and apparatus for interferometric modulation of light |
US7235914B2 (en) | 2000-10-25 | 2007-06-26 | Washington State University Research Foundation | Piezoelectric micro-transducers, methods of use and manufacturing methods for same |
US6556338B2 (en) | 2000-11-03 | 2003-04-29 | Intpax, Inc. | MEMS based variable optical attenuator (MBVOA) |
US6859218B1 (en) * | 2000-11-07 | 2005-02-22 | Hewlett-Packard Development Company, L.P. | Electronic display devices and methods |
US6433917B1 (en) | 2000-11-22 | 2002-08-13 | Ball Semiconductor, Inc. | Light modulation device and system |
US6353489B1 (en) | 2000-11-23 | 2002-03-05 | Digilens, Inc. | Optical retro-reflection device |
US6647171B1 (en) | 2000-12-01 | 2003-11-11 | Corning Incorporated | MEMS optical switch actuator |
US6906847B2 (en) | 2000-12-07 | 2005-06-14 | Reflectivity, Inc | Spatial light modulators with light blocking/absorbing areas |
EP1344309A1 (en) * | 2000-12-11 | 2003-09-17 | Rad H. Dabbaj | Electrostatic device |
US6614576B2 (en) | 2000-12-15 | 2003-09-02 | Texas Instruments Incorporated | Surface micro-planarization for enhanced optical efficiency and pixel performance in SLM devices |
DE10064616C2 (en) | 2000-12-22 | 2003-02-06 | Ovd Kinegram Ag Zug | Decorative film and method for labeling the decorative film |
US6911891B2 (en) * | 2001-01-19 | 2005-06-28 | Massachusetts Institute Of Technology | Bistable actuation techniques, mechanisms, and applications |
JP2002221678A (en) | 2001-01-25 | 2002-08-09 | Seiko Epson Corp | Optical switching device, method of manufacturing for the same and image display device |
US6912078B2 (en) | 2001-03-16 | 2005-06-28 | Corning Incorporated | Electrostatically actuated micro-electro-mechanical devices and method of manufacture |
JP2002283299A (en) * | 2001-03-21 | 2002-10-03 | Seiko Epson Corp | Method of manufacturing microelectric machine |
US6661561B2 (en) | 2001-03-26 | 2003-12-09 | Creo Inc. | High frequency deformable mirror device |
US6657832B2 (en) | 2001-04-26 | 2003-12-02 | Texas Instruments Incorporated | Mechanically assisted restoring force support for micromachined membranes |
US6707355B1 (en) * | 2001-06-29 | 2004-03-16 | Teravicta Technologies, Inc. | Gradually-actuating micromechanical device |
JP3740444B2 (en) * | 2001-07-11 | 2006-02-01 | キヤノン株式会社 | Optical deflector, optical equipment using the same, torsional oscillator |
JP4032216B2 (en) * | 2001-07-12 | 2008-01-16 | ソニー株式会社 | OPTICAL MULTILAYER STRUCTURE, ITS MANUFACTURING METHOD, OPTICAL SWITCHING DEVICE, AND IMAGE DISPLAY DEVICE |
KR100452112B1 (en) * | 2001-07-18 | 2004-10-12 | 한국과학기술원 | Electrostatic Actuator |
US6632698B2 (en) | 2001-08-07 | 2003-10-14 | Hewlett-Packard Development Company, L.P. | Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS |
US6661562B2 (en) | 2001-08-17 | 2003-12-09 | Lucent Technologies Inc. | Optical modulator and method of manufacture thereof |
US20030053078A1 (en) | 2001-09-17 | 2003-03-20 | Mark Missey | Microelectromechanical tunable fabry-perot wavelength monitor with thermal actuators |
WO2003028059A1 (en) | 2001-09-21 | 2003-04-03 | Hrl Laboratories, Llc | Mems switches and methods of making same |
US6787438B1 (en) | 2001-10-16 | 2004-09-07 | Teravieta Technologies, Inc. | Device having one or more contact structures interposed between a pair of electrodes |
EP1454349B1 (en) | 2001-11-09 | 2006-09-27 | WiSpry, Inc. | Trilayered beam mems device and related methods |
JP2003168755A (en) * | 2001-11-30 | 2003-06-13 | Tamagawa Seiki Co Ltd | Packaging method of semiconductor element |
US6917268B2 (en) * | 2001-12-31 | 2005-07-12 | International Business Machines Corporation | Lateral microelectromechanical system switch |
US6791735B2 (en) * | 2002-01-09 | 2004-09-14 | The Regents Of The University Of California | Differentially-driven MEMS spatial light modulator |
US6608268B1 (en) | 2002-02-05 | 2003-08-19 | Memtronics, A Division Of Cogent Solutions, Inc. | Proximity micro-electro-mechanical system |
US6794119B2 (en) | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
US6574033B1 (en) | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
US6954297B2 (en) | 2002-04-30 | 2005-10-11 | Hewlett-Packard Development Company, L.P. | Micro-mirror device including dielectrophoretic liquid |
US6972882B2 (en) | 2002-04-30 | 2005-12-06 | Hewlett-Packard Development Company, L.P. | Micro-mirror device with light angle amplification |
JP2003340795A (en) | 2002-05-20 | 2003-12-02 | Sony Corp | Electrostatic drive type mems element and manufacturing method therefor, optical mems element, optical modulator, glv device and laser display |
JP3801099B2 (en) | 2002-06-04 | 2006-07-26 | 株式会社デンソー | Tunable filter, manufacturing method thereof, and optical switching device using the same |
US6813059B2 (en) | 2002-06-28 | 2004-11-02 | Silicon Light Machines, Inc. | Reduced formation of asperities in contact micro-structures |
FR2843230B1 (en) | 2002-08-02 | 2005-04-29 | Commissariat Energie Atomique | MAGNETIC ACTUATOR WITH LEVITATION |
US6822798B2 (en) * | 2002-08-09 | 2004-11-23 | Optron Systems, Inc. | Tunable optical filter |
US6674033B1 (en) * | 2002-08-21 | 2004-01-06 | Ming-Shan Wang | Press button type safety switch |
TW544787B (en) * | 2002-09-18 | 2003-08-01 | Promos Technologies Inc | Method of forming self-aligned contact structure with locally etched gate conductive layer |
US7085121B2 (en) | 2002-10-21 | 2006-08-01 | Hrl Laboratories, Llc | Variable capacitance membrane actuator for wide band tuning of microstrip resonators and filters |
FR2846318B1 (en) | 2002-10-24 | 2005-01-07 | Commissariat Energie Atomique | INTEGRATED ELECTROMECHANICAL MICROSTRUCTURE HAVING MEANS FOR ADJUSTING THE PRESSURE IN A SEALED CAVITY AND A METHOD OF ADJUSTING THE PRESSURE |
US7370185B2 (en) | 2003-04-30 | 2008-05-06 | Hewlett-Packard Development Company, L.P. | Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers |
US6958846B2 (en) | 2002-11-26 | 2005-10-25 | Reflectivity, Inc | Spatial light modulators with light absorbing areas |
US6844959B2 (en) | 2002-11-26 | 2005-01-18 | Reflectivity, Inc | Spatial light modulators with light absorbing areas |
KR100501185B1 (en) | 2002-12-10 | 2005-07-18 | 삼성전기주식회사 | Method and apparatus for uniformizating output ac level in mems capacitive type sensor |
TWI289708B (en) | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
TW594155B (en) | 2002-12-27 | 2004-06-21 | Prime View Int Corp Ltd | Optical interference type color display and optical interference modulator |
US6807892B2 (en) | 2002-12-30 | 2004-10-26 | Xerox Corporation | Pneumatic actuator with elastomeric membrane and low-power electrostatic flap valve arrangement |
US6808953B2 (en) * | 2002-12-31 | 2004-10-26 | Robert Bosch Gmbh | Gap tuning for surface micromachined structures in an epitaxial reactor |
JP2004219843A (en) | 2003-01-16 | 2004-08-05 | Seiko Epson Corp | Optical modulator, and display device and their manufacturing methods |
TW200413810A (en) | 2003-01-29 | 2004-08-01 | Prime View Int Co Ltd | Light interference display panel and its manufacturing method |
TW557395B (en) | 2003-01-29 | 2003-10-11 | Yen Sun Technology Corp | Optical interference type reflection panel and the manufacturing method thereof |
TW200417806A (en) | 2003-03-05 | 2004-09-16 | Prime View Int Corp Ltd | A structure of a light-incidence electrode of an optical interference display plate |
TWI224235B (en) | 2003-04-21 | 2004-11-21 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
TW594360B (en) | 2003-04-21 | 2004-06-21 | Prime View Int Corp Ltd | A method for fabricating an interference display cell |
TWI226504B (en) | 2003-04-21 | 2005-01-11 | Prime View Int Co Ltd | A structure of an interference display cell |
TW567355B (en) | 2003-04-21 | 2003-12-21 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
US7072093B2 (en) | 2003-04-30 | 2006-07-04 | Hewlett-Packard Development Company, L.P. | Optical interference pixel display with charge control |
US6829132B2 (en) * | 2003-04-30 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Charge control of micro-electromechanical device |
US6940630B2 (en) | 2003-05-01 | 2005-09-06 | University Of Florida Research Foundation, Inc. | Vertical displacement device |
TW570896B (en) * | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
TW591716B (en) | 2003-05-26 | 2004-06-11 | Prime View Int Co Ltd | A structure of a structure release and manufacturing the same |
TWI223855B (en) * | 2003-06-09 | 2004-11-11 | Taiwan Semiconductor Mfg | Method for manufacturing reflective spatial light modulator mirror devices |
US7221495B2 (en) | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
US7173314B2 (en) * | 2003-08-13 | 2007-02-06 | Hewlett-Packard Development Company, L.P. | Storage device having a probe and a storage cell with moveable parts |
TW200506479A (en) * | 2003-08-15 | 2005-02-16 | Prime View Int Co Ltd | Color changeable pixel for an interference display |
TWI305599B (en) * | 2003-08-15 | 2009-01-21 | Qualcomm Mems Technologies Inc | Interference display panel and method thereof |
TWI251712B (en) * | 2003-08-15 | 2006-03-21 | Prime View Int Corp Ltd | Interference display plate |
TW593127B (en) * | 2003-08-18 | 2004-06-21 | Prime View Int Co Ltd | Interference display plate and manufacturing method thereof |
TWI231865B (en) * | 2003-08-26 | 2005-05-01 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
US20050057442A1 (en) * | 2003-08-28 | 2005-03-17 | Olan Way | Adjacent display of sequential sub-images |
TWI230801B (en) | 2003-08-29 | 2005-04-11 | Prime View Int Co Ltd | Reflective display unit using interferometric modulation and manufacturing method thereof |
TWI232333B (en) * | 2003-09-03 | 2005-05-11 | Prime View Int Co Ltd | Display unit using interferometric modulation and manufacturing method thereof |
US6982820B2 (en) * | 2003-09-26 | 2006-01-03 | Prime View International Co., Ltd. | Color changeable pixel |
US20050068583A1 (en) * | 2003-09-30 | 2005-03-31 | Gutkowski Lawrence J. | Organizing a digital image |
TW593126B (en) | 2003-09-30 | 2004-06-21 | Prime View Int Co Ltd | A structure of a micro electro mechanical system and manufacturing the same |
TWI235345B (en) | 2004-01-20 | 2005-07-01 | Prime View Int Co Ltd | A structure of an optical interference display unit |
TWI256941B (en) | 2004-02-18 | 2006-06-21 | Qualcomm Mems Technologies Inc | A micro electro mechanical system display cell and method for fabricating thereof |
US7119945B2 (en) | 2004-03-03 | 2006-10-10 | Idc, Llc | Altering temporal response of microelectromechanical elements |
TW200530669A (en) | 2004-03-05 | 2005-09-16 | Prime View Int Co Ltd | Interference display plate and manufacturing method thereof |
TWI261683B (en) | 2004-03-10 | 2006-09-11 | Qualcomm Mems Technologies Inc | Interference reflective element and repairing method thereof |
US7476327B2 (en) | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
-
2004
- 2004-05-04 US US10/839,329 patent/US7476327B2/en not_active Expired - Fee Related
-
2005
- 2005-04-20 WO PCT/US2005/013462 patent/WO2005110915A1/en active Application Filing
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-
2008
- 2008-11-14 US US12/271,793 patent/US7704772B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5096279A (en) * | 1984-08-31 | 1992-03-17 | Texas Instruments Incorporated | Spatial light modulator and method |
US20040008402A1 (en) * | 2000-08-11 | 2004-01-15 | Patel Satyadev R. | Micromirrors with mechanisms for enhancing coupling of the micromirrors with electrostatic fields |
US20020111031A1 (en) * | 2001-02-14 | 2002-08-15 | Chase Troy A. | Deep reactive ion etching process and microelectromechanical devices formed thereby |
US20020158348A1 (en) * | 2001-04-27 | 2002-10-31 | Motorola, Inc. | Semiconductor structure and method for reducing charge damage |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009527371A (en) * | 2006-02-22 | 2009-07-30 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Electrical adjustment of MEMS device and its insulating layer |
JP2010521318A (en) * | 2007-02-20 | 2010-06-24 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Apparatus and method for performing MEMS etching |
Also Published As
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US7704772B2 (en) | 2010-04-27 |
JP2007536097A (en) | 2007-12-13 |
TWI286124B (en) | 2007-09-01 |
US20090068781A1 (en) | 2009-03-12 |
US7476327B2 (en) | 2009-01-13 |
CN1950291A (en) | 2007-04-18 |
KR20070004943A (en) | 2007-01-09 |
JP4603039B2 (en) | 2010-12-22 |
TW200607750A (en) | 2006-03-01 |
KR101162192B1 (en) | 2012-07-05 |
US20050249966A1 (en) | 2005-11-10 |
CN1950291B (en) | 2011-01-05 |
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