WO2006000669A2 - Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation. - Google Patents
Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation. Download PDFInfo
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- WO2006000669A2 WO2006000669A2 PCT/FR2005/001262 FR2005001262W WO2006000669A2 WO 2006000669 A2 WO2006000669 A2 WO 2006000669A2 FR 2005001262 W FR2005001262 W FR 2005001262W WO 2006000669 A2 WO2006000669 A2 WO 2006000669A2
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- WIPO (PCT)
- Prior art keywords
- intermediate layer
- layer
- impurities
- material constituting
- light power
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Definitions
- the present invention relates to the general technical field of material processing, in particular the field of thin films in particular of semiconductors, the domain of platelets or blades of material, the domain of wafers or lamellae of semiconductors, in particular silicon, IV-IV type IV semiconductors to obtain electronic or optoelectronic components such as integrated circuits, photovoltaic cells or cells or electro-mechanical micro-systems (MEMS) or micro-systems opto-electro-mechanical (MOEMS) or display devices such as flat screens or imaging devices.
- MEMS electro-mechanical micro-systems
- MOEMS micro-systems opto-electro-mechanical
- European Patent EP-A-0924769 describes a process in which a structure is manufactured by successive stacking of several layers. During its production, a particular layer deep inside the final structure is stacked, which exhibits the intrinsic property, when it is subsequently subjected to a luminous flux, of selectively absorbing this flux and leading to an exfoliation phenomenon. allowing a division of the structure into two plates.
- the structure manufactured by stacking comprises a deep layer of amorphous silicon rich in hydrogen. The application of a luminous flux to this structure leads to a rapid release of hydrogen in this layer, as the structure divides.
- the object of the invention is in particular to provide a multi-layer structure having, in depth, a separation layer.
- the object of the invention is in particular to provide said separation layer after the manufacture of the multi-layer structure.
- the object of the invention is to provide a multi-layer structure having, in depth, a separation layer between a surface layer intended to be separated from the structure and the rest of the structure.
- the object of the invention is to provide an easier and more varied choice of the basic structure on which the surface layer to be separated is made.
- the object of the invention is in particular to provide a separation layer in a multi-layer structure in which a surface layer to be separated is monocrystalline and is obtained by growth on a monocrystalline substrate of the same mesh parameter, without the quality of the monocrystalline surface layer and / or the Monocrystalline substrate is deeply affected.
- the present invention particularly relates to a method of producing a multi-layer structure having, in depth, a separation layer.
- this method consists in: - producing an initial multi-layer structure comprising a base substrate, a surface substrate and, between the base substrate and the surface substrate, an absorbent layer capable of absorbing a flux light power on at least one zone and a liquefiable intermediate layer comprising on at least one zone impurities having a segregation coefficient with respect to the material constituting this intermediate layer less than unity; and subjecting said initial structure to said light power flow for a specified time and in the form of at least one pulse, said light power flow being adjusted to produce the liquefaction of at least a portion of said light power flow; intermediate layer under the effect of the propagation of thermal energy resulting from absorption of light power in said absorbent layer, from said absorbent layer to said intermediate layer and / or the absorption of light power by said intermediate layer, such that it results, thanks to the initial presence of said impurities, a modification of at least one characteristic and / or of at least one property of said intermediate layer at the end of the at least partial solidification of said intermediate layer,
- the invention thus makes it possible to obtain a final structure having, for example under a surface layer to be separated, a separation layer whose characteristics and / or properties are different from those of the initial material constituting the intermediate layer, particular mechanical properties and / or electrical and / or optical and / or thermal and / or chemical properties, such that the physical separation of said surface layer to be separated from the rest of the structure is made possible by a possible application if necessary to said final structure of mechanical and / or electrical and / or optical and / or thermal and / or chemical treatments, the effects of which on the separation layer are sufficiently differentiated from the effects on the rest of the structure so as not to altering said surface layer and / or said rest of the structure.
- the invention may have numerous variants and in particular the following.
- said modification may advantageously consist of a modification of the concentration and / or distribution of said impurities in said intermediate layer.
- said modification may advantageously consist of an increase in the concentration and / or distribution of said impurities in an area of said intermediate layer.
- said initial structure may comprise a single type of material.
- said initial structure could comprise different materials.
- the process may advantageously comprise a preliminary step of introducing said impurities into said intermediate layer by ion implantation.
- the material constituting said intermediate layer preferably comprises silicon and said impurities are chosen from aluminum and / or bismuth and / or gallium and / or indium and / or antimony and / or tin.
- the material constituting at least said intermediate layer preferably comprises silicon-germanium.
- the material constituting at least said surface substrate preferably comprises silicon or silicon-germanium.
- the material constituting at least said intermediate layer and the constituent material of said impurities may advantageously be chosen so that the separation layer comprises inclusions.
- said inclusions are preferably constituted by precipitates and / or bubbles and / or microbubbles and / or defects and / or changes of phase and / or chemical composition and / or fractures and / or cavities and / or heterogeneous phases and / or alloys.
- the material constituting said intermediate layer and the constituent material of said impurities can advantageously be chosen so that the separation layer comprises weakened parts.
- said embrittlement is preferably sufficient to allow the physical separation of the base substrate and the surface substrate, possibly with the application of separating forces.
- the material constituting said intermediate layer and the constituent material of said impurities may advantageously be chosen so that the separation layer comprises a metal-type portion.
- the material constituting said intermediate layer and the constituent material of said impurities can advantageously be chosen such that the separation layer comprises a portion whose melting temperature is lowered.
- said lowering of the melting temperature is preferably sufficient to allow, during a subsequent heating step possibly accompanied by the application of separating forces, the physical separation of the base substrate and the surface substrate.
- the direction of the light power flow may be such that it reaches said absorbent layer after passing through said intermediate layer.
- the direction of the light power flow may be such that it reaches said absorbent layer without passing through said layer to be treated.
- the method may advantageously consist in subjecting said initial structure to a temporally stationary light flux and swept with respect to this structure.
- the method may advantageously consist in subjecting said initial structure to a spatially stationary and modulated light power flux in the form of one or more temporal pulses.
- said luminous power flux may advantageously be constituted by an infra-red light flux.
- said light power flow could advantageously be constituted by a laser beam.
- said laser beam may be a CO2 laser.
- said laser beam could be a chemical laser.
- said laser beam may be a laser operating at the wavelength of 1.06 microns.
- said absorption layer may advantageously comprise at least one doped zone.
- said absorption layer may advantageously comprise at least one amorphous zone.
- said absorption layer preferably comprises at least one silicon-germanium zone.
- said surface substrate and / or said intermediate layer and / or said absorption layer may advantageously be produced by epitaxy.
- the basic substrate is, in a first particular embodiment, a monocrystalline silicon block derived from the longitudinal cut of a cylindrical ingot.
- the base substrate consists of a silicon wafer 200 mm in diameter and 0.75 mm thick doped with antimony at a concentration of 1.E 19 / cm3.
- the absorbent zone is a zone having a high initial absorption coefficient for the luminous flux, for example 500 Cm -1. It should be noted that the absorption coefficient in this zone generally varies during the application of the luminous flux pulse. Indeed, the rise in temperature itself generates in general an increase in absorption itself generating a more concentrated energy deposit itself generating an even greater rise in temperature.
- the absorbent zone is in a particular case of all or part of a silicon-germanium epitaxial layer (SiO, 85-GeO, 15) 10 microns thick, much more absorbent at wavelength 1, 06 microns than silicon and which is grown on the base substrate.
- the absorbent zone is a zone doped with, for example, arsenic or antimony at a concentration of 1.E.sub.18 / Cm2 at some 1.E19 / cm3. Indeed, this layer is absorbent for the wavelength 10.6 microns of a CO2 laser while the undoped silicon is very little absorbent at this wavelength.
- the absorbing zone is produced by low temperature implantation of silicon ions at the energy of 2 MeV and at a dose of 1.E 1 6 / Cm2 in the layer to be treated, which has the effect of to create under the surface of the layer to be treated at a depth of 1.5 micron an amorphized zone whose absorption coefficient for the wavelength 1, 06 microns can reach several hundreds of cm -1 while that of the crystalline silicon is is in the range of about ten cm-1.
- the zone to be treated may be, in a particular embodiment, an epitaxial layer of tin-doped silicon in situ during growth at a concentration of 1.E 19 / cm3 that has been grown on a doped monocrystalline silicon absorber layer. in arsenic.
- the tin is introduced into said epitaxial layer by the ion implantation of tin ions with the dose of 5 * 10 15 Cm -2 and at the energy of 200 keV followed by a treatment diffusion temperature of 12 hours at 1150 ° C.
- the epitaxial process can be both a CVD type process, a process of epitaxial growth type.
- liquid phase epitaxy of silicon from a bath for example tin or aluminum or molten indium in which silicon has been dissolved, may be one of the preferred routes for realization of photovoltaic cells.
- the present invention will also be better understood thanks to the following nonlimiting explanations with regard to the power flow implemented.
- the duration of the light power flow is chosen to be sufficiently short and the intensity of the power flow is chosen to be sufficiently high for the thermal energy profile to remain sufficiently concentrated and for its level to allow at least partial liquefaction of the zone to be treated. .
- ⁇ t the energy supplied is sufficient to obtain at least partial liquefaction of the zone to be treated.
- the choices of ⁇ t and the power flow can be made by simulation by solving the equation of heat for example by a finite difference method. This method and its application to the study of the light flux interaction with the material are well known and are as examples described in the reference: "Laser nitriding of metals, Peter Schaaf, Progress in Materials Science 47 (2002) 1 - 161 ".
- the order of magnitude of the density of energy to be deposited is known, using the following rule of thumb given as an example in the case of silicon: It takes about 7000J to liquefy a Cm3 from room temperature. When we have chosen the thickness that we wish to liquefy, it is sufficient to multiply 7000J by the thickness in question and we have the necessary energy density. Finally, it suffices to take into account surface reflection losses to determine the order of magnitude of the energy density to be sent to the part. For example, the thickness to be liquefied may be 10 microns, the reflection coefficient may be 0.5 and the order of magnitude of the energy density to be sent may be 14J / Cm2. The duration of the laser pulses is known.
- a triggered laser In the case of a triggered laser, it is, depending on the laser, from one to a few tens or hundreds of nanoseconds. This value is provided by the laser manufacturer. From the necessary energy density and the duration of the pulse, one can deduce the power flow; this gives the starting point of the simulation. The result of this will adjust the parameters if necessary.
- a stationary power flow spatially with respect to the structure to be treated, and whose intensity as a function of the time is presented in the form of one or more pulses.
- a spatially stationary light power flow it is possible by way of non-limiting example to use a TEA type CO2 laser.
- This category of laser is indeed well suited to the supply of pulses of high power and duration of a few tens of ns to a few hundreds of nS, thus generating energies of the order of a few tens to a few hundred mJ per pulse .
- a CO2 TEA laser providing pulses of 10OmJ at 10OnS is used.
- the beam is focused on an area of 1 mm 2 , which makes it possible to obtain a power density of 100 MW / Cm2 and an energy density of 10J / Cm2.
- the workpiece In order to treat a large area after each pulse, the workpiece can be moved to process a new part.
- a laser of the aforementioned type having a recurrence frequency of 100 Hz
- the workpiece is displaced by approximately 1 mm, which corresponds to an average speed of 0.1 ⁇ m / s and can be achieved by example by fixing the workpiece on a motorized table.
- a CO2 laser operating in continuous mode and providing a power of 7 kW can be used.
- the beam of light is, after its exit from the laser, expanded by an expanding optical system, so that the beam after the expander is substantially parallel and has a diameter of about 25 cm. This beam is deflected by a mirror and then propagates vertically.
- a focusing system is then located on the path of the beam with a focal length of Im.
- the beam is then deflected by a rotating mirror, so that the beam thus deflected propagates in a substantially horizontal plane.
- the rotating mirror is carried by a support rotating about an axis substantially coinciding with the axis of the optical focusing system. By turning, this mirror rotates the axis of the reflected beam, so that each time the mirror makes a turn, the focal point of the beam describes a circumference in a horizontal plane.
- the surface of the workpieces is placed so that it is on this circumference.
- the beam is focused on a diameter of 80 microns, the radius of the circumference is 70 cm and the rotational speed of the mirror is 364 Hz, or about 22000 rev / min. Under these conditions, each point is exposed to a power flux density equal to 100MW / Cm2 of duration 10OnS and energy density equal to 14J / Cm2.
- the optical expander and focusing systems can be made both in diffractive optics and in reflective optics.
- Platelets comprising an arsenic-doped silicon base substrate at the level 1 * E 18 / Cm 3 , the upper part of which constitutes the absorbent layer, a 7 micron thick layer to be treated doped with tin at a concentration of 1 * E19 / 3 , a surface epitaxial layer of undoped silicon 20 microns thick constituting the layer to be separated, are fixed on the inner peripheral portion of said inner surface.
- the surface of the layer to be separated is optionally covered with thin layers for example anti-reflective layers and / or thick layers serving for example stiffeners
- the received light power pulse can liquefy the material between about a depth of 21 microns and a depth of 27 microns. These values can vary significantly depending on the evolution as a function of time of the pulse of the power flow and the shape of the absorption profile as a function of the depth.
- the liquid zone is thus limited by a solid-liquid interface greater than the depth of about 21 microns and a solid-liquid interface less than the depth of 27 microns. Most of the pre - existing tin atoms in the solid phase in this area and in the immediate vicinity of it are found in the liquid phase.
- the two solid-liquid interfaces each progress at their own speed towards each other, thereby reducing the width of the liquid zone.
- the segregation coefficient (sometimes called distribution coefficient) of tin in silicon ie because of the tendency of tin atoms to remain in the liquid phase rather than to move into the solid phase
- the progression of the two solid-liquid interfaces results in a pushing effect in front of them, in the liquid phase, of a large part of the tin atoms, thus leading to an increase more and more high concentration of tin atoms in the liquid phase.
- the result is a tendency to deplete tin of the re-solidified part of the material.
- the result after the end of the recrystallization is a concentration profile having a very narrow bell curve shape whose apex is located on or near the meeting plane of the solidification interfaces.
- the tin atoms that were present in the liquid phase just before its disappearance are necessarily found in the solid state material. This can lead locally, for carefully chosen experimental conditions, to a very high concentration of impurities in a narrow zone in the vicinity of the depth, called the encounter depth, in which the two solid-liquid interfaces have joined and therefore in which the liquid phase will have disappeared completely.
- inclusions may be agglomerates of particles, bubbles of both substantially spherical shape and flattened form, resulting for example from the gas phase impurities, precipitates of atoms or molecules, precipitates of defects, cavities, structural defects, fractures, new chemical compounds, new phases, heterogeneous phases, alloys, or any combination of these elements . It is thus possible to weaken the material through this mechanism and to make possible a separation between the part of the material between the surface and the weakened zone and the rest of the material.
- the invention it is also possible thanks to the invention to obtain, in the vicinity of the encounter plane solidification interfaces, the formation of an area whose melting temperature is lower than that of silicon.
- This can be used for example to separate the surface portion of the material above the meeting plane, the rest of the material by heating the assembly to the melting temperature of the meeting plane area and possibly by exerting separating forces.
- the phenomenon of re-solidification may be more complex than that described above. Indeed, the progression of the two upper and lower interfaces can be combined with a progression of the lateral interfaces, and even with the formation of discontinuous liquid zones separated by re-solidified zones. However, whatever the complexity of the mechanisms involved, this always results in the concentration of impurities in a very small volume of material. In the previous example, the tin atom is used.
- the principle also works with other atoms having a low coefficient of segregation with respect to silicon, such as for example without limitation: aluminum, bismuth, gallium, indium, tin.
- aluminum bismuth, gallium, indium, tin.
- dopants such as aluminum will not be used. indium, gallium, bismuth and antimony or only at low concentrations.
- FIG. 1 represents a section of an initial structure according to the invention
- Figure 2 shows a section of this structure, in process
- Figure 3 shows a vertical section of a first processing apparatus of an initial structure
- Figure 4 shows a top view of the apparatus of Figure 3.
- an initial multi-layer structure 1 based on silicon which comprises a base substrate 2 on which are formed successively an absorbent layer 3, an intermediate layer 4 to be treated and a surface substrate 5 to be separated which has an outer flat surface 6.
- the absorbent layer 3 and the intermediate layer 4 could be reversed.
- the absorbent layer 3 Under the effect of the propagation of the thermal energy resulting from the absorption of the light power flow 8 in the absorbent layer 3, from this absorbent layer 3 to the intermediate layer 4, it is produces a rise in temperature and liquefaction of the material of at least a portion of the intermediate layer 4, said temperature rise and the liquid phase 9 thus produced of the intermediate layer 4 may also contribute to the absorption of the light power .
- this liquefaction occurs as follows.
- the above liquefaction phase is followed by a phase of re ⁇ solidification of the material which generates a progressive reduction of the gap between the interfaces 10 and 1 1 as shown by the arrows 14 and 15 attached to these interfaces.
- This re-solidification phase occurs in general and essentially after the application of the pulse of the light power flux 4.
- the impurities contained in the intermediate layer 4 pass into solution in the liquid phase 9.
- the impurities tend to remain in the liquid phase 9 such that at the end of the material's re-solidification phase, a majority of these impurities are concentrated in a portion or layer 16 of the initial intermediate layer 4 that re-solidifies last, that is, ie in a silicon volume whose thickness is much lower, by example of the order of a few tens of nanometers, than the aforementioned maximum thickness of the liquid phase 9.
- These impurities can then be found in the part 16 possibly at concentration levels much higher than the limit solubility in solid phase , thus generating the formation of precipitates and / or crystalline defects weakening the material in the concentration zone 16.
- the high concentration of impurities in the part 16 significantly modifies the properties or characteristics of the material so that it is possible to apply a subsequent treatment to the structure 1 altering the part 16 and does not alter the rest of this structure.
- This subsequent processing of the structure 1 may advantageously make it possible to divide into two wafers the structure 1, one of which comprises the base substrate 2 and the other the surface substrate 5, producing this separation at the level of the part or layer weakened 16 with increased concentration of impurities.
- the exercise of forces associated or not with a heat treatment, or vice versa can be used to achieve this separation. Referring to FIGS. 3 and 4, it can be seen that an apparatus 100 for processing initial structures 1 has been represented.
- This apparatus comprises a cylindrical support 101 with a vertical axis, on an inner face of which are fixed, distributed over a circumference initial structures 1 to be treated whose faces 6 are placed vertically are turned towards the axis of the support 101.
- the apparatus 100 comprises a generator 102 of temporally stationary light power flux, placed below the support 101 and comprising a transmitter laser 103 which emits to an optical expander 104 so that the flux coming out of this expander 104 is horizontal and whose axis intersects the axis of the support 101.
- the apparatus 100 comprises an optical system 105 which comprises a fixed mirror 106 inclined at 45 ° which deflects upwardly, vertically, the flow exiting the expander 104 in the direction of a rotating mirror 107, via a focusing lens 108, this rotating mirror 107 being placed in the center of the support 101, at 45 °, and its axis of rotation being disposed along the axis of the support 101, so that the light power flux reflected by the rotating mirror 105 is oriented towards the inner face of the support 101.
- the rotating mirror 107 is rotated, the luminous power flow sweeps horizontally, successively, the structures to be treated 1.
- the support 101 can then cause a total scanning of the surface 6 of the structures to be treated 1 in the form of pulses.
Abstract
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BRPI0511207-9A BRPI0511207A (pt) | 2004-06-01 | 2005-05-20 | processo de realização de uma estrutura multicamadas |
AU2005256723A AU2005256723B8 (en) | 2004-06-01 | 2005-05-20 | Method for producing a multilayer structure comprising a separating layer |
EP05773255A EP1774579B1 (fr) | 2004-06-01 | 2005-05-20 | Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation |
JP2007513998A JP5335237B2 (ja) | 2004-06-01 | 2005-05-20 | 深さ方向に分離層を含む多層構造物の製造方法 |
US11/628,185 US7846816B2 (en) | 2004-06-01 | 2005-05-20 | Method for producing a multilayer structure comprising a separating layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0405883A FR2870988B1 (fr) | 2004-06-01 | 2004-06-01 | Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation |
FR0405883 | 2004-06-01 |
Publications (2)
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WO2006000669A2 true WO2006000669A2 (fr) | 2006-01-05 |
WO2006000669A3 WO2006000669A3 (fr) | 2007-01-25 |
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PCT/FR2005/001262 WO2006000669A2 (fr) | 2004-06-01 | 2005-05-20 | Procédé de réalisation d'une structure multi-couches comportant, en profondeur, une couche de séparation. |
Country Status (8)
Country | Link |
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US (1) | US7846816B2 (fr) |
EP (1) | EP1774579B1 (fr) |
JP (1) | JP5335237B2 (fr) |
CN (1) | CN100444335C (fr) |
AU (1) | AU2005256723B8 (fr) |
BR (1) | BRPI0511207A (fr) |
FR (1) | FR2870988B1 (fr) |
WO (1) | WO2006000669A2 (fr) |
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US8288684B2 (en) * | 2007-05-03 | 2012-10-16 | Electro Scientific Industries, Inc. | Laser micro-machining system with post-scan lens deflection |
FR2961719B1 (fr) * | 2010-06-24 | 2013-09-27 | Soitec Silicon On Insulator | Procede de traitement d'une piece en un materiau compose |
FR2965396B1 (fr) * | 2010-09-29 | 2013-02-22 | S O I Tec Silicon On Insulator Tech | Substrat démontable, procédés de fabrication et de démontage d'un tel substrat |
RU2469433C1 (ru) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты) |
FR2978600B1 (fr) | 2011-07-25 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de couche de materiau semi-conducteur |
FR2980279B1 (fr) * | 2011-09-20 | 2013-10-11 | Soitec Silicon On Insulator | Procede de fabrication d'une structure composite a separer par exfoliation |
CN104205293B (zh) * | 2012-03-30 | 2017-09-12 | 帝人株式会社 | 半导体装置的制造方法 |
FR2991499A1 (fr) * | 2012-05-31 | 2013-12-06 | Commissariat Energie Atomique | Procede et systeme d'obtention d'une tranche semi-conductrice |
CN106340439A (zh) * | 2015-07-06 | 2017-01-18 | 勤友光电股份有限公司 | 用于镭射剥离处理的晶圆结构 |
DE102016000051A1 (de) * | 2016-01-05 | 2017-07-06 | Siltectra Gmbh | Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern |
EP4166270A1 (fr) | 2016-03-22 | 2023-04-19 | Siltectra GmbH | Procédé de séparation d'une couche d'un solide par rayonnement laser |
EP3551373A1 (fr) | 2016-12-12 | 2019-10-16 | Siltectra GmbH | Procédé d'amincissement de couches de solides pourvues de composants |
TWI631022B (zh) * | 2016-12-26 | 2018-08-01 | 謙華科技股份有限公司 | 熱印頭模組之製造方法 |
FR3079657B1 (fr) * | 2018-03-29 | 2024-03-15 | Soitec Silicon On Insulator | Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure |
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JPH1126733A (ja) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
JP3911929B2 (ja) * | 1999-10-25 | 2007-05-09 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
US7211214B2 (en) * | 2000-07-18 | 2007-05-01 | Princeton University | Laser assisted direct imprint lithography |
US7105425B1 (en) * | 2002-05-16 | 2006-09-12 | Advanced Micro Devices, Inc. | Single electron devices formed by laser thermal annealing |
-
2004
- 2004-06-01 FR FR0405883A patent/FR2870988B1/fr not_active Expired - Fee Related
-
2005
- 2005-05-20 AU AU2005256723A patent/AU2005256723B8/en not_active Ceased
- 2005-05-20 WO PCT/FR2005/001262 patent/WO2006000669A2/fr active Application Filing
- 2005-05-20 CN CNB2005800218458A patent/CN100444335C/zh active Active
- 2005-05-20 EP EP05773255A patent/EP1774579B1/fr active Active
- 2005-05-20 BR BRPI0511207-9A patent/BRPI0511207A/pt not_active IP Right Cessation
- 2005-05-20 US US11/628,185 patent/US7846816B2/en active Active
- 2005-05-20 JP JP2007513998A patent/JP5335237B2/ja active Active
Patent Citations (8)
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US4452644A (en) * | 1980-02-01 | 1984-06-05 | Commissariat A L'energie Atomique | Process for doping semiconductors |
US4415373A (en) * | 1981-11-17 | 1983-11-15 | Allied Corporation | Laser process for gettering defects in semiconductor devices |
US20030224582A1 (en) * | 1996-08-27 | 2003-12-04 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same |
US20020068419A1 (en) * | 1997-12-26 | 2002-06-06 | Kiyofumi Sakaguchi | Semiconductor article and method of manufacturing the same |
US20030170990A1 (en) * | 1998-05-15 | 2003-09-11 | Kiyofumi Sakaguchi | Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure |
US6300208B1 (en) * | 2000-02-16 | 2001-10-09 | Ultratech Stepper, Inc. | Methods for annealing an integrated device using a radiant energy absorber layer |
WO2003046967A2 (fr) * | 2001-11-30 | 2003-06-05 | Koninklijke Philips Electronics N.V. | Procede de fabrication d'un dispositif a semi-conducteur |
US6555439B1 (en) * | 2001-12-18 | 2003-04-29 | Advanced Micro Devices, Inc. | Partial recrystallization of source/drain region before laser thermal annealing |
Also Published As
Publication number | Publication date |
---|---|
EP1774579A2 (fr) | 2007-04-18 |
EP1774579B1 (fr) | 2012-05-16 |
JP2008501228A (ja) | 2008-01-17 |
US20090053877A1 (en) | 2009-02-26 |
US7846816B2 (en) | 2010-12-07 |
BRPI0511207A (pt) | 2007-11-27 |
FR2870988B1 (fr) | 2006-08-11 |
CN100444335C (zh) | 2008-12-17 |
AU2005256723B8 (en) | 2011-07-28 |
FR2870988A1 (fr) | 2005-12-02 |
AU2005256723B2 (en) | 2011-02-10 |
CN1998071A (zh) | 2007-07-11 |
WO2006000669A3 (fr) | 2007-01-25 |
JP5335237B2 (ja) | 2013-11-06 |
AU2005256723A1 (en) | 2006-01-05 |
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