WO2006010133A3 - Tunable photonic crystal - Google Patents

Tunable photonic crystal Download PDF

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Publication number
WO2006010133A3
WO2006010133A3 PCT/US2005/024654 US2005024654W WO2006010133A3 WO 2006010133 A3 WO2006010133 A3 WO 2006010133A3 US 2005024654 W US2005024654 W US 2005024654W WO 2006010133 A3 WO2006010133 A3 WO 2006010133A3
Authority
WO
WIPO (PCT)
Prior art keywords
material layer
semiconductor material
photonic crystal
energy
surface features
Prior art date
Application number
PCT/US2005/024654
Other languages
French (fr)
Other versions
WO2006010133A2 (en
Inventor
Irina Puscasu
Martin U Pralle
James T Daly
Mark P Mcneal
Edward A Johnson
Original Assignee
Ion Optics Inc
Irina Puscasu
Martin U Pralle
James T Daly
Mark P Mcneal
Edward A Johnson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Optics Inc, Irina Puscasu, Martin U Pralle, James T Daly, Mark P Mcneal, Edward A Johnson filed Critical Ion Optics Inc
Priority to JP2007520590A priority Critical patent/JP5174458B2/en
Priority to EP05771278A priority patent/EP1779444A4/en
Priority to CA2573149A priority patent/CA2573149C/en
Publication of WO2006010133A2 publication Critical patent/WO2006010133A2/en
Publication of WO2006010133A3 publication Critical patent/WO2006010133A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/255—Details, e.g. use of specially adapted sources, lighting or optical systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
    • G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Abstract

An infrared emitter (10), which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer (12), a dielectric material layer (14) overlaying the semiconductor material layer, and a metallic material layer (16) having an inner side overlaying the dielectric material layer. The semiconductor material layer (12) is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features (18) are defined in the device in a periodic or quasi-periodic manner. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects. The emitter device may also function as a selective detector of electromagnetic radiation.
PCT/US2005/024654 2004-07-08 2005-07-08 Tunable photonic crystal WO2006010133A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007520590A JP5174458B2 (en) 2004-07-08 2005-07-08 Tunable photonic crystal
EP05771278A EP1779444A4 (en) 2004-07-08 2005-07-08 Tunable photonic crystal
CA2573149A CA2573149C (en) 2004-07-08 2005-07-08 Tunable photonic crystal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58633404P 2004-07-08 2004-07-08
US60/586,334 2004-07-08

Publications (2)

Publication Number Publication Date
WO2006010133A2 WO2006010133A2 (en) 2006-01-26
WO2006010133A3 true WO2006010133A3 (en) 2006-05-04

Family

ID=35785802

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/024654 WO2006010133A2 (en) 2004-07-08 2005-07-08 Tunable photonic crystal

Country Status (5)

Country Link
US (2) US7498574B2 (en)
EP (1) EP1779444A4 (en)
JP (1) JP5174458B2 (en)
CA (1) CA2573149C (en)
WO (1) WO2006010133A2 (en)

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Also Published As

Publication number Publication date
EP1779444A4 (en) 2011-01-05
JP2008506269A (en) 2008-02-28
US20090236614A1 (en) 2009-09-24
US7825380B2 (en) 2010-11-02
CA2573149A1 (en) 2006-01-26
US7498574B2 (en) 2009-03-03
CA2573149C (en) 2017-06-06
JP5174458B2 (en) 2013-04-03
WO2006010133A2 (en) 2006-01-26
EP1779444A2 (en) 2007-05-02
US20070018077A1 (en) 2007-01-25

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