WO2006020566B1 - Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom and systems and method affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes - Google Patents
Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom and systems and method affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processesInfo
- Publication number
- WO2006020566B1 WO2006020566B1 PCT/US2005/028120 US2005028120W WO2006020566B1 WO 2006020566 B1 WO2006020566 B1 WO 2006020566B1 US 2005028120 W US2005028120 W US 2005028120W WO 2006020566 B1 WO2006020566 B1 WO 2006020566B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- microelectronic topography
- sub
- electroless plating
- deposition solution
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1682—Control of atmosphere
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1683—Control of electrolyte composition, e.g. measurement, adjustment
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
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- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
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- H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
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- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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Abstract
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US59997504P | 2004-08-09 | 2004-08-09 | |
US60/599,975 | 2004-08-09 |
Publications (2)
Publication Number | Publication Date |
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WO2006020566A1 WO2006020566A1 (en) | 2006-02-23 |
WO2006020566B1 true WO2006020566B1 (en) | 2006-03-23 |
Family
ID=35406276
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2005/028119 WO2006020565A2 (en) | 2004-08-09 | 2005-08-09 | Barrier layer configurations and methods for processing microelectronic topographies having barrier layers |
PCT/US2005/028120 WO2006020566A1 (en) | 2004-08-09 | 2005-08-09 | Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom and systems and method affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2005/028119 WO2006020565A2 (en) | 2004-08-09 | 2005-08-09 | Barrier layer configurations and methods for processing microelectronic topographies having barrier layers |
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US (13) | US20060029833A1 (en) |
WO (2) | WO2006020565A2 (en) |
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2005
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- 2005-08-09 WO PCT/US2005/028119 patent/WO2006020565A2/en active Application Filing
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-
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- 2009-11-11 US US12/616,367 patent/US7884033B2/en not_active Expired - Fee Related
-
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- 2010-03-08 US US12/719,167 patent/US7897507B2/en not_active Expired - Fee Related
- 2010-07-19 US US12/838,607 patent/US20100279071A1/en not_active Abandoned
- 2010-07-19 US US12/838,643 patent/US8591985B2/en active Active
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-
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-
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-
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Also Published As
Publication number | Publication date |
---|---|
US7884033B2 (en) | 2011-02-08 |
WO2006020565A2 (en) | 2006-02-23 |
US8143161B2 (en) | 2012-03-27 |
US20100055300A1 (en) | 2010-03-04 |
WO2006020566A1 (en) | 2006-02-23 |
US20100279071A1 (en) | 2010-11-04 |
US20110097477A1 (en) | 2011-04-28 |
US20110117328A1 (en) | 2011-05-19 |
US8591985B2 (en) | 2013-11-26 |
WO2006020565A3 (en) | 2006-06-01 |
US7636234B2 (en) | 2009-12-22 |
US7714441B2 (en) | 2010-05-11 |
US7779782B2 (en) | 2010-08-24 |
US20060030157A1 (en) | 2006-02-09 |
US20060029727A1 (en) | 2006-02-09 |
US20120263869A1 (en) | 2012-10-18 |
US20100279002A1 (en) | 2010-11-04 |
US9953866B1 (en) | 2018-04-24 |
US20060029833A1 (en) | 2006-02-09 |
US20100159208A1 (en) | 2010-06-24 |
WO2006020565B1 (en) | 2006-08-03 |
US7897507B2 (en) | 2011-03-01 |
US8502381B2 (en) | 2013-08-06 |
US20060030143A1 (en) | 2006-02-09 |
US20180218942A1 (en) | 2018-08-02 |
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