WO2006020566B1 - Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom and systems and method affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes - Google Patents

Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom and systems and method affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes

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Publication number
WO2006020566B1
WO2006020566B1 PCT/US2005/028120 US2005028120W WO2006020566B1 WO 2006020566 B1 WO2006020566 B1 WO 2006020566B1 US 2005028120 W US2005028120 W US 2005028120W WO 2006020566 B1 WO2006020566 B1 WO 2006020566B1
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WO
WIPO (PCT)
Prior art keywords
film
microelectronic topography
sub
electroless plating
deposition solution
Prior art date
Application number
PCT/US2005/028120
Other languages
French (fr)
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WO2006020566A1 (en
Inventor
Igor C Ivanov
Original Assignee
Blue29 Llc
Igor C Ivanov
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Publication date
Application filed by Blue29 Llc, Igor C Ivanov filed Critical Blue29 Llc
Publication of WO2006020566A1 publication Critical patent/WO2006020566A1/en
Publication of WO2006020566B1 publication Critical patent/WO2006020566B1/en

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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1651Two or more layers only obtained by electroless plating
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
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    • C23C18/1675Process conditions
    • C23C18/1682Control of atmosphere
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
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    • C23C18/1675Process conditions
    • C23C18/1683Control of electrolyte composition, e.g. measurement, adjustment
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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    • H01L21/76841Barrier, adhesion or liner layers
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    • H01L21/76849Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
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    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76853Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855After-treatment introducing at least one additional element into the layer
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    • H01L21/76867Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
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    • H01L23/53204Conductive materials
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    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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Abstract

Methods for forming a barrier layer (28, 30) with periodic concentrations of elements using electroless deposition techniques as well as structures resulting therefrom are provided. In addition, systems and methods affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes are provided. In particular, a method and an apparatus (80) are provided which are configured to dispense a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. Another method and accompanying electroless deposition chamber (130) are configured to introduce a gas into an electroless plating chamber above a plate (136) which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography.

Claims

AMENDED CLAIMS
[received by the International Bureau on 9th February 2006)]
WHAT IS
+ STATEMENT
1. A microelectronic topography, comprising: a metal structure having a bulk concentration of a first element disposed throughout the metal structure; and a diffusion barrier film formed in contact with the metal structure, wherein the diffusion barrier film is substantially absent of this first element and comprises a plurality of metallic elements different the first element, wherein the diffusion barrier film has periodic successions of regions, and wherein each of the periodic successions comprise: at least one region with a concentration of a second element greater than a set amount, wherein the second element is one of the plurality of metallic elements of the diffusion barrier film; and at least one region with a concentration of the second element less than the set amount.
2. The microelectronic topography of claim 1, wherein the periodic successions of regions comprise sub-layers vertically arranged within the diffusion barrier film.
3. The microelectronic topography of claim 1, wherein the periodic successions of regions comprise regions horizontally arranged within the diffusion barrier film.
4. The microelectronic topography of claim 1, wherein the diffusion barrier film is arranged upon the metal structure.
5. The microelectronic topography of claim 1 , wherein the diffusion barrier film is arranged beneath the metal structure.
6. The microelectronic topography of claim 1 , wherein the first element comprises copper, and wherein the second element comprises cobalt.
7. The microelectronic topography of claim 6, wherein a variation of the concentrations of cobalt among the periodic successions of regions is between approximately 10% and approximately 30%.
8. The microelectronic topography of claim 1, wherein the second element comprises phosphorus, and wherein a variation of the concentrations of phosphorus among the periodic successions of regions is between approximately 3% and approximately 12%.
9. The microelectronic topography of claim 1, wherein the second element comprises boron, and wherein a variation of the concentrations of boron among the periodic successions of regions is between approximately 1% and approximately 2%. 10. The microelectronic topography of claim 1 , wherein the second element comprises molybdenum, and wherein a variation of the concentrations of molybdenum among the periodic successions of regions is between approximately 1% and approximately 50%.
11. The microelectronic topography of claim 1, wherein the second element is selected from a group consisting of hydrogen, tungsten, chromium, nickel, rhodium, ruthenium and palladium.
12. The microelectronic topography of claim 1, wherein the plurality of metallic elements comprise cobalt, tungsten, and at least one of boron and phosphorus.
13. The microelectronic topography of claim 1, wherein the plurality of metallic elements comprise cobalt, molybdenum, and at least one of chromium and boron.
14. A microelectronic topography, comprising: a conductive structure having a bulk concentration of copper disposed throughout the structure; and a film formed in contact with the conductive structure, wherein the film comprises cobalt and at least one other element selected from a group consisting of phosphorus, boron, tungsten, chromium, molybdenum, nickel, palladium, rhodium, ruthenium, oxygen, and hydrogen, and wherein the film comprises alternating regions of comparatively greater and lesser concentrations of cobalt.
15. The microelectronic topography of claim 14, wherein the alternating regions further comprise comparatively greater and lesser concentrations of at least one other element.
17. A method for processing a microelectronic topography, comprising: positioning the microelectronic topography within an electroless plating chamber; dispensing a first deposition solution upon the microelectronic topography to form a first sub-film within the electroless plating chamber, wherein the first sub-film comprises multiple elements selected from a group consisting of cobalt, phosphorus, boron, tungsten, chromium, molybdenum, nickel, palladium, rhodium, ruthenium, oxygen, and hydrogen; removing the first deposition solution from the electroless plating chamber subsequent to the formation of the first sub-film; and dispensing a second deposition solution upon the microelectronic topography subsequent, to the removal of the first deposition solution to form a second sub-film upon and in contact with the first sub-film, wherein the second sub-film comprises multiple elements selected from a group consisting of cobalt, phosphorus, boron, tungsten, chromium, molybdenum, nickel, palladium, rhodium, ruthenium, oxygen, and hydrogen, and wherein the second sub-film comprises more than one of the multiple elements included within the first sub-film. 18. The method of claim 17, wherein the second sub-film comprises the same elements selected from the group consisting of cobalt, phosphorus, boron, tungsten, chromium, molybdenum, nickel, palladium, rhodium, ruthenium, oxygen, and hydrogen as the elements included in the first sub-film.
19. The method of claim 17, wherein a concentration of at least one of the elements within the second sub-film differs from a concentration of the same dement within the first sub-film.
20. The method of claim 17, further comprising establishing chamber process parameters different than those used during the formation of the first sub-film prior to the step of dispensing the second deposition solution.
21. The method of claim 20, wherein the first and second deposition solutions comprise substantially equal compositions.
22. The method of claim 17, wherein the first and second deposition solutions comprise substantially different compositions.
23. The method of claim 17, wherein at least one of the first and second deposition solutions comprises maleic acid and a component comprising cobalt.
24. The method of claim 17, wherein at least one of the first and second deposition solutions comprises pyrophosphate acid and a component comprising cobalt.
25. The method of claim 17, wherein at least one of the first and second deposition solutions comprise hydroxyethyl ethylonediamine triacetic acid and a component comprising cobalt.
26. The method of claim 17, wherein at least one of the first and second deposition solutions comprise ammonium hydroxide and a component comprising ruthenium.
27. The method of claim 17, further comprising terminating and subsequently resuming the step of dispensing the first deposition solution during the formation of the first sub-film.
28. The method of claim 17, further comprising: rotating a substrate holder upon which the microelectronic topography is positioned within the electroless plating chamber; and terminating and subsequently resuming the step of rotating the substrate holder during the formation of the first sub-film 29. The method of claim 17, further comprising: removing the second deposition solution from the electroless plating chamber subsequent to the formation of the second sub-film; and repeating the steps of dispensing and removing the first deposition soluiion subsequent to the removal of the second deposition solution to form a third sub-film upon and in contact with the second sub-film, wherein the third sub-film comprises multiple elements selected from a group consisting of cobalt, phosphorus, boron, tungsten, chromium, molybdenum, nickel, palladium, rhodium, ruthenium, oxygen, and hydrogen.
30. The method of claim 29, wherein a concentration of at least one of the elements within the third sub-film is closer to a concentration of the same element within the first sub-film than a concentration of the same element within the second sub-film.
31. The method of claim 29, further comprising establishing chamber process parameter settings different than those used during the formation of tho first sub-film prior to tho step of repeating the steps of dispensing and removing the first deposition solution.
32. The method of claim 17, further comprising: removing the second deposition solution from the electroless plating chamber subsequent to the formation of the second sub-film; and reiterating the steps of dispensing and removing the first deposition solution and the steps of dispensing and removing the second deposition solution subsequent to the formation of the second sub-film to form additional sub-films above the second sub-film, wherein each of the additional sub-films comprise multiple elements selected from a group consisting of cobalt, phosphorus, boron, tungsten, chromium, molybdenum, nickel, palladium, rhodium, ruthenium, oxygen, and hydrogen.
33. The method of claim 17, further comprising: removing the second deposition solution from the electroless plating chamber subsequent to the formation of the second sub-film; and consecutively dispensing and removing one or more additional deposition solutions different than the first and second deposition solutions subsequent to the removal of the second deposition solution to form one or more additional sub-films above the second sub-film, wherein each of the additional sub-films comprise multiple elements selected from a group consisting of cobalt, phosphorus, boron, tungsten, chromium, molybdenum, nickel, palladium, rhodium, ruthenium, oxygen, and hydrogen.
34. A method for processing a microelectronic topography, comprising: forming a bulk metallic film upon the microelectronic topography using an electroless plating process, wherein the bulk metallic film comprises a bottom portion, a top portion, and an intermediate portion interposed between the bottom and top portions, wherein one of tho top and bottom portions comprises a higher concentration of a first element than the intermediate portion and the other of the top and bottom portions; and annealing the microelectronic topography to induce diffusion of the first element from at least one of the top and bottom portions to the intermediate portion such that the intermediate portion comprises a higher concentration of the first clement than the bottom and top portions.
35. The method of claim 34, wherein the step of forming the bulk metallic film comprises forming the bulk metallic film upon and in contact with a metallic structure having a bulk elemental concentration different than the film, and wherein the bottom portion of the bulk metallic film comprises a higher concentration of the first element than the intermediate portion and the top portion prior to the step of annealing the microelectronic topography.
36. The method of claim 34, wherein the step of forming the bulk metallic film comprises forming the bulk metallic film upon and in contact with a dielectric structure, and wherein the top portion of the bulk metallic film comprises a higher concentration of the first element than the intermediate portion and the bottom portion prior to the step of annealing the microelectronic topography.
37. The method of claim 34, wherein the first element comprises phosphorus.
38. The method of claim 34, wherein the step of annealing the microelectronic topography further comprises diffusing one or more other elements from a t least one of the top and bottom portions to the intermediate portion such that the intermediate portion comprises a higher concentration of the one or more elements than the bottom and top portions.
39. The method of claim 34, wherein the step of annealing the microelectronic topography comprises exposing the microelectronic topography to a healed environment comprising a second element different from the first element.
40. A method for depositing a film upon a microelectronic topography, comprising: exposing the microelectronic topography to a deposition solution; forming a first sub-film portion by interfacial electroless reduction of a first clement within the deposition solution until a second different element reaches a certain concentration within the deposition solution, wherein the first sub-film comprises a higher concentration of the first element than the second element; forming a second sub-film portion upon and in contact with the first sub-film portion by chemical adsorption until the first element increases to a particular concentration within the deposition solution, wherein the second sub-film comprises a higher concentration of the second element than the first element; and reiterating the steps of forming the first and second sub-film portions to form a composite film comprising concentration variations of the first and second elements. 41. The method of claim 40, wherein the first element is cobalt and the second element is molybdenum.
42. The method of claim 40, wherein the first element is oxygen and the second element is molybdenum.
43. The method of claim 40, wherein the deposition solution comprises an agent to slow the adsorption of the second element during the step of forming the second sub-film portion.
44. A method for processing a microelectronic topography, comprising: positioning the microelectronic topography within an electroless plating chamber; and subsequently dispensing a deposition solution upon a plurality of locations across the microelectronic topography, wherein each of the plurality locations extend a different distance from a central axis of symmetry of the microelectronic topography, and wherein the step of dispensing the deposition solution comprises dispensing the deposition solution upon the plurality of locations each at a different moment in time during an electroless plating process.
45. The method of claim 44, wherein the step of dispensing the deposition solution comprises dispensing the deposition solution for different durations of time for at least two of the plurality of locations of the microelectronic topography.
46. The method of claim 44, wherein the step of dispensing the deposition solution comprises: dispensing the deposition solution through a first nozzle above one of the plurality of locations of the microelectronic topography; and dispensing the deposition solution through a second nozzle above another of the plurality of locations of the microelectronic topography, wherein the first and second nozzles comprise different sizes.
47. The method of claim 44, wherein the step of dispensing the deposition solution comprises: dispensing this deposition solution at a first rate above one the plurality of locations of the microelectronic topography; and dispensing the deposition solution at a second different rate above another of the plurality of locations of the microelectronic topography.
48. The method of claim 44, wherein at Ieast one of the first and second rates induce laminar flow of the deposition solution.
49. The method of claim 44, wherein the step of dispensing the deposition solution comprises pulsing the deposition solution above at least one of the plurality of locations of the microelectronic topography. 50. The method of claim 44, wherein the step of dispensing the deposition solution comprises: dispensing the deposition solution upon one of the plurality of locations of the microelectronic topography at a first temperature; and dispensing the deposition solution upon another of the plurality of locations of the microelectronic topography at a second distinct temperature.
51. The method of claim 44, wherein the step of dispensing the deposition solution comprises introducing solution temperature variation across the microelectronic topography.
52. The method of claim 44, wherein the step of dispensing the deposition solution comprises introducing solution temperature uniformity across the microelectronic topography.
53. The method of claim 44, wherein the step of dispensing the deposition solution comprises inducing a periodic variation of concentrations of at least one element within a film formed during the electroless plating process.
54. The method of claim 44, wherein the step of dispensing the deposition solution comprises inducing a variation of thickness within a film formed by the electroless plating process.
55. The method of claim 44, wherein the step of dispensing the deposition solution comprises inducing thickness uniformity within a film formed by the electroless plating process.
56. The method of claim 44, wherein the step of dispensing the deposition solution comprises: dispensing the deposition solution in a first sequence of steps among the plurality of locations to form a first sub-film across a surface of the microelectronic topography; and dispensing the deposition solution in a second different sequence of steps among the plurality of locations to form a second sub-film across the microelectronic topography and upon the first sub-film.
57. An electroless plating apparatus, comprising: a substrate holder; a moveable dispense arm; and a storage medium comprising program instructions executable by a processor for repositioning the moveable dispense arm among a plurality of select locations above tho substrate holder during an electroless plating process.
58. The electroless plating apparatus of claim 57, wherein the storage medium further comprises program instructions executable by a processor for varying amounts of solution dispensed from moveable dispense arm at the plurality of select locations. 59. The electroless plating apparatus of claim 57, wherein the storage medium further comprises program instructions executable by a processor for varying angles at which solution is dispensed from moveable dispense arm with respect to the plurality of select locations.
60. The electroless plating apparatus of claim 57, wherein the moveable dispense aim comprises a multiple of different sized nozzles, and wherein the storage medium further comprises program instructions executable by a processor for selectively dispensing solution through distinct sets of the multiple of different sized nozzles with respect to the plurality of select locations.
61. The electroless plating apparatus of claim 57, wherein the storage medium further comprises program instructions executable by a processor for varying rates at which solution is dispensed from the moveable dispense arm with respect to the plurality of select locations,
62. The electroless plating apparatus of claim 57, wherein the moveable dispense arm comprises a thermocouple, and wherein the storage medium further comprises program instructions executable by a processor for dispensing solution at different temperatures with respect to the plurality of select locations.
63. The electroless plating apparatus of claim 62, wherein the substrate holder is configured to induce temperature vocations across the microelectronic topography.
64. A microelectronic topography comprising a layer with a plurality of elements, wherein the layer comprises distinct regions horizontally arranged within the layer, and wherein each of the distinct regions have a different thickness and a different concentration of at least one of the plurality of elements.
65. The microelectronic topography of claim 64, wherein, the distinct regions are non-incrementally arranged according to their thicknesses.
66. The microelectronic topography of claim 64, wherein the distinct regions are non-incrementally arranged according to the concentrations of the at least one element.
67. A method for processing a microelectronic topography, comprising: dispensing a deposition solution upon a microelectronic topography arranged within an electroless plating chamber; introducing a gas into the electroless plating chamber above a plate suspended above the microelectronic topography, wherein step of intioducing the gas into the electroless plating chamber is initiated during a time which one of prior to, during, or subsequent to the step of dispensing the deposition solution; and distributing the gas to regions between the plate and one or more discrete portions of the microelectronic topography to invoke evaporation of the deposition solution dispensed upon the one or more discrete portions.
68. The method of claim 67, wherein the step of distributing the gas comprises distributing the gas to outer edges of the plate.
69. The method of claim 67, wherein the step of distributing the gas comprises distributing the gas through holes within the plate.
70. The method of claim 67, wherein the step of distributing the gas comprises rotating the plate in the same direction as the microelectronic topography is rotated.
71. The method of claim 67, wherein the step of distributing the gas comprises rotating the plate in the opposite direction as the microelectronic topography is rotated.
74. The method of claim 67, wherein step of introducing the gas into the electroless plating chamber is initiated at substantially the same time as the step of dispensing the deposition solution.
75. The method of claim 67, wherein the step of introducing the gas comprises introducing nitrogen into the electroless plating chamber.
76. The method of claim 67, wherein the step of distributing the gas comprises introducing temperature variation of the deposition solution across the microelectronic topography.
77. The method of claim 67, wherein the step of distributing this gas comprises introducing solution temperature uniformity across the microelectronic topography.
78. The method of claim 67, wherein the step of distributing the gas comprises inducing a periodic variation of concentrations of at least one element within a film formed during an electroless plating process.
79. An electroless plating chamber, comprising: a substrate holder; a plate suspended above the substrate holder wherein the plate comprises a disc having a diameter smaller than a diameter of a semiconductor wafer for which the electroless plating chamber is configured to process; and a gas inlet arranged above the plate, wherein the plate is configured to distribute gas dispensed from the gas inlet to one or more discrete regions above the substrate holder. 81. The electroless plating chamber of claim 79, wherein the plate comprises through-holes.
82. A method for processing a microelectronic topography, comprising: positioning a microelectronic topography within an electroless plating; introducing a fluorinated carbon gas into the electroless plating chamber subsequent to the step of positioning the microelectronic topography within the electroless plating chamber; and introducing a deposition solution into the electroless plating chamber to form a film upon the microelectronic topography subsequent to the initiation of the step of introducing the fluorinated carbon gas within the electroless plating chamber.
83. The method of claim 82, wherein the step of introducing the fluorinated carbon gas comprises introducing the fluorinated carbon gas at a temperature greater than approximately 450 °C into the electroless plating chamber.
PCT/US2005/028120 2004-08-09 2005-08-09 Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom and systems and method affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes WO2006020566A1 (en)

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