WO2006023206A8 - One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection - Google Patents

One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection

Info

Publication number
WO2006023206A8
WO2006023206A8 PCT/US2005/026251 US2005026251W WO2006023206A8 WO 2006023206 A8 WO2006023206 A8 WO 2006023206A8 US 2005026251 W US2005026251 W US 2005026251W WO 2006023206 A8 WO2006023206 A8 WO 2006023206A8
Authority
WO
WIPO (PCT)
Prior art keywords
nanocrystals
metal chalcogenide
source
metal
chalcogenide nanocrystals
Prior art date
Application number
PCT/US2005/026251
Other languages
French (fr)
Other versions
WO2006023206A2 (en
WO2006023206A3 (en
Inventor
Yunwei Charles Cao
Original Assignee
Univ Florida
Yunwei Charles Cao
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Florida, Yunwei Charles Cao filed Critical Univ Florida
Publication of WO2006023206A2 publication Critical patent/WO2006023206A2/en
Publication of WO2006023206A8 publication Critical patent/WO2006023206A8/en
Publication of WO2006023206A3 publication Critical patent/WO2006023206A3/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B17/00—Sulfur; Compounds thereof
    • C01B17/20—Methods for preparing sulfides or polysulfides, in general
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/12—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00—Compounds of cadmium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00—Compounds of cadmium
    • C01G11/02—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G13/00—Compounds of mercury
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/08—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Abstract

A method of homogeneously forming metal chalcogenide nanocrystals includes the steps combining a metal source, a chalcogenide source, and at least one solvent at a first temperature to form a liquid comprising assembly, and heating the assembly at a sufficient temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals. The plurality of metal chalcogenide nanocrystals are then grown without injection of either the metal source or the chalcogenide source at a temperature at least equal to the sufficient temperature, wherein growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. An optional nucleation initiator can help control the final size of the monodisperse crystals. Such synthesis, without the need for precursor injection, is suitable for the industrial preparation of high-quality nanocrystals.
PCT/US2005/026251 2004-07-23 2005-07-25 One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection WO2006023206A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59087604P 2004-07-23 2004-07-23
US60/590,876 2004-07-23

Publications (3)

Publication Number Publication Date
WO2006023206A2 WO2006023206A2 (en) 2006-03-02
WO2006023206A8 true WO2006023206A8 (en) 2006-08-24
WO2006023206A3 WO2006023206A3 (en) 2007-04-19

Family

ID=35502430

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/026251 WO2006023206A2 (en) 2004-07-23 2005-07-25 One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection

Country Status (2)

Country Link
US (1) US7465352B2 (en)
WO (1) WO2006023206A2 (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1232608C (en) * 2004-04-06 2005-12-21 中国科学院长春应用化学研究所 Method for synthesizing nano semiconductor luminescence material on interface bewteen liquid-liquid
US8137457B2 (en) * 2004-07-23 2012-03-20 University Of Florida Research Foundation, Inc. One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection
US8454927B2 (en) * 2004-08-04 2013-06-04 Crystalplex Corporation Alloyed semiconductor nanocrystals
KR20080095288A (en) * 2006-02-13 2008-10-28 솔렉슨트 코포레이션 Photovoltaic device with nanostructured layers
KR20080097462A (en) * 2006-02-16 2008-11-05 솔렉슨트 코포레이션 Nanoparticle sensitized nanostructured solar cells
CN101405888B (en) * 2006-02-17 2011-09-28 索莱赞特公司 Nanostructured electroluminescent device and display
JP2009531837A (en) * 2006-03-23 2009-09-03 ソレクサント・コーポレイション Photovoltaic device containing carbon nanotubes sensitized by nanoparticles
WO2008063657A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008140601A1 (en) * 2006-12-06 2008-11-20 Solexant Corporation Nanophotovoltaic device with improved quantum efficiency
US9174186B2 (en) * 2007-08-17 2015-11-03 University Of Florida Research Foundation, Inc. Supercrystalline colloidal particles and method of production
US8609182B2 (en) * 2008-03-05 2013-12-17 Global Solar Energy, Inc. Solution containment during buffer layer deposition
DE212009000032U1 (en) * 2008-03-05 2010-11-04 Global Solar Energy, Inc., Tuscon System for applying a chalcogenide buffer layer to a flexible support
DE112009000532T5 (en) * 2008-03-05 2011-03-10 Global Solar Energy, Inc., Tuscon Heater for buffer layer application
US9252318B2 (en) 2008-03-05 2016-02-02 Hanergy Hi-Tech Power (Hk) Limited Solution containment during buffer layer deposition
WO2009111053A2 (en) 2008-03-05 2009-09-11 Global Solar Energy, Inc. Buffer layer deposition for thin-film solar cells
KR100927700B1 (en) * 2008-03-20 2009-11-18 한국화학연구원 Method for preparing nano-sized metal chalcogenides using organometallic complexes and chalcogen elements
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
KR101995369B1 (en) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 Light-emitting device including quantum dots
US8932489B2 (en) 2008-08-12 2015-01-13 National Research Council Of Canada. Colloidal nanocrystal ensembles with narrow linewidth band gap photoluminescence and methods of synthesizing colloidal semiconductor nanocrystals
US8012448B2 (en) * 2009-07-13 2011-09-06 University Of Southern California Synthesis of metal chalcogenide nanocrystals using organodichalcogenide reagents
WO2011100023A1 (en) 2010-02-10 2011-08-18 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
WO2011133999A1 (en) * 2010-04-30 2011-11-03 Commonwealth Scientific And Industrial Research Organisation Crystallisation facilitators for the synthesis of metal organic frameworks
WO2012099653A2 (en) 2010-12-08 2012-07-26 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
EP2776367B1 (en) * 2011-11-10 2016-09-28 Universiteit Gent Synthesis of nanomaterials
WO2013082772A1 (en) * 2011-12-07 2013-06-13 East China University Of Science And Technology Methods of producing cadmium selenide multi-pod nanocrystals
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
WO2015017478A2 (en) * 2013-07-29 2015-02-05 US Nano LLC SYNTHESIS OF CdSe/ZnS CORE/SHELL SEMICONDUCTOR NANOWIRES
US20160097140A1 (en) * 2014-10-02 2016-04-07 Cornell University Enhanced conductivity metal-chalcogenide films via post elecrophoretic deposition (epd) treatment
CN112047310A (en) * 2018-09-15 2020-12-08 东莞理工学院 Preparation method of Ag-doped ZnTe semiconductor nano material
CN110571337B (en) * 2019-08-05 2023-04-18 北京大学深圳研究生院 Method for preparing perovskite film in air based on pre-nucleation control method and application
CN115924958A (en) * 2022-11-15 2023-04-07 华北水利水电大学 Dispersible zinc oxide or zinc sulfide nano-particles for lubricating grease and preparation method and application thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60023559T2 (en) * 1999-07-26 2006-09-07 Massachusetts Institute Of Technology, Cambridge NANOCRYSTALLINE TELLUR CONTAINING MATERIALS
JP2004510678A (en) * 2000-10-04 2004-04-08 ザ　ボード　オブ　トラスティーズ　オブ　ザ　ユニバーシティ　オブ　アーカンソー Synthesis of colloidal nanocrystals
GB0026382D0 (en) * 2000-10-27 2000-12-13 Nanox Ltd Production of metal chalcogenide nanoparticles
US6576291B2 (en) * 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US20020083888A1 (en) * 2000-12-28 2002-07-04 Zehnder Donald A. Flow synthesis of quantum dot nanocrystals
WO2003012006A1 (en) * 2001-07-30 2003-02-13 The Board Of Trustees Of The University Of Arkansas Colloidal nanocrystals with high photoluminescence quantum yields and methods of preparing the same
US6875274B2 (en) * 2003-01-13 2005-04-05 The Research Foundation Of State University Of New York Carbon nanotube-nanocrystal heterostructures and methods of making the same

Also Published As

Publication number Publication date
WO2006023206A2 (en) 2006-03-02
US7465352B2 (en) 2008-12-16
WO2006023206A3 (en) 2007-04-19
US20060019427A1 (en) 2006-01-26

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