WO2006023637A3 - In situ surface contaminant removal for ion implanting - Google Patents

In situ surface contaminant removal for ion implanting Download PDF

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Publication number
WO2006023637A3
WO2006023637A3 PCT/US2005/029387 US2005029387W WO2006023637A3 WO 2006023637 A3 WO2006023637 A3 WO 2006023637A3 US 2005029387 W US2005029387 W US 2005029387W WO 2006023637 A3 WO2006023637 A3 WO 2006023637A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
contaminants
removal
ion implanting
contaminant removal
Prior art date
Application number
PCT/US2005/029387
Other languages
French (fr)
Other versions
WO2006023637A2 (en
Inventor
Steve Walther
Sandeep Mehta
Naushad Variam
Ukyo Jeong
Original Assignee
Varian Semiconductor Equipment
Steve Walther
Sandeep Mehta
Naushad Variam
Ukyo Jeong
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment, Steve Walther, Sandeep Mehta, Naushad Variam, Ukyo Jeong filed Critical Varian Semiconductor Equipment
Priority to JP2007528008A priority Critical patent/JP2008511139A/en
Publication of WO2006023637A2 publication Critical patent/WO2006023637A2/en
Publication of WO2006023637A3 publication Critical patent/WO2006023637A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0055—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Abstract

Methods and apparatus (Figure 1) that introduce, within the ion implant chamber (20; Figure 1) or an isolated chamber (50; Figure 1) in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer (48; Figure 1) surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer (48; Figure 1) and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer (48; Figure 1) to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.
PCT/US2005/029387 2004-08-20 2005-08-18 In situ surface contaminant removal for ion implanting WO2006023637A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007528008A JP2008511139A (en) 2004-08-20 2005-08-18 Apparatus and method for in situ removal of surface contaminants for ion implantation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/922,710 US20060040499A1 (en) 2004-08-20 2004-08-20 In situ surface contaminant removal for ion implanting
US10/922,710 2004-08-20

Publications (2)

Publication Number Publication Date
WO2006023637A2 WO2006023637A2 (en) 2006-03-02
WO2006023637A3 true WO2006023637A3 (en) 2007-03-01

Family

ID=35910169

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/029387 WO2006023637A2 (en) 2004-08-20 2005-08-18 In situ surface contaminant removal for ion implanting

Country Status (6)

Country Link
US (2) US20060040499A1 (en)
JP (1) JP2008511139A (en)
KR (1) KR20070041595A (en)
CN (1) CN101006198A (en)
TW (1) TWI268547B (en)
WO (1) WO2006023637A2 (en)

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US20060040499A1 (en) * 2004-08-20 2006-02-23 Steve Walther In situ surface contaminant removal for ion implanting
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
KR101264687B1 (en) * 2006-06-21 2013-05-16 엘지디스플레이 주식회사 Printing Apparatus, Patterning Method and Method of Manufacturing Liquid Crystal Display Device the Same
US20110056513A1 (en) * 2008-06-05 2011-03-10 Axel Hombach Method for treating surfaces, lamp for said method, and irradiation system having said lamp
JP5395405B2 (en) 2008-10-27 2014-01-22 東京エレクトロン株式会社 Substrate cleaning method and apparatus
CN101935883B (en) * 2010-09-10 2012-05-02 北京工业大学 Ultrahigh vacuum ion source wafer cleaning system
US8742373B2 (en) * 2010-12-10 2014-06-03 Varian Semiconductor Equipment Associates, Inc. Method of ionization
JP5750951B2 (en) 2011-03-14 2015-07-22 富士通株式会社 Etching method and etching apparatus
CN102644052B (en) * 2012-05-03 2014-02-05 中国科学院光电技术研究所 Vacuum coating machine equipped with ultraviolet irradiation cleaning functions
CN103894377B (en) * 2013-12-25 2017-07-21 韦小凤 A kind of ultraviolet light and plasma combined cleaning device
EP3107875B1 (en) * 2014-02-20 2018-06-13 Corning Incorporated Uv photobleaching of glass having uv-induced colorization
CN104465292B (en) * 2014-11-28 2017-05-03 上海华力微电子有限公司 Pretreatment method for ion implanter
GB201615114D0 (en) * 2016-09-06 2016-10-19 Spts Technologies Ltd A Method and system of monitoring and controlling deformation of a wafer substrate
US10224212B2 (en) * 2017-01-27 2019-03-05 Lam Research Corporation Isotropic etching of film with atomic layer control
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN109546012B (en) * 2018-11-23 2021-10-26 京东方科技集团股份有限公司 Organic film etching method and display substrate display area circuit repairing method
CN113169026A (en) 2019-01-22 2021-07-23 应用材料公司 Feedback loop for controlling pulsed voltage waveform
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
CN112921272A (en) * 2021-01-26 2021-06-08 西安钛斗金属制品科技有限公司 Preparation method of low-friction TiN film layer
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
CN114496852B (en) * 2022-01-25 2022-11-29 永耀实业(深圳)有限公司 Ion implantation machine for integrated circuit production line

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Also Published As

Publication number Publication date
US7544959B2 (en) 2009-06-09
US20060040499A1 (en) 2006-02-23
KR20070041595A (en) 2007-04-18
US20080185537A1 (en) 2008-08-07
CN101006198A (en) 2007-07-25
TW200614352A (en) 2006-05-01
WO2006023637A2 (en) 2006-03-02
TWI268547B (en) 2006-12-11
JP2008511139A (en) 2008-04-10

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