WO2006033682A3 - Storage elements using nanotube switching elements - Google Patents

Storage elements using nanotube switching elements Download PDF

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Publication number
WO2006033682A3
WO2006033682A3 PCT/US2005/018537 US2005018537W WO2006033682A3 WO 2006033682 A3 WO2006033682 A3 WO 2006033682A3 US 2005018537 W US2005018537 W US 2005018537W WO 2006033682 A3 WO2006033682 A3 WO 2006033682A3
Authority
WO
WIPO (PCT)
Prior art keywords
circuits
nanotube switching
storage
constructed
elements
Prior art date
Application number
PCT/US2005/018537
Other languages
French (fr)
Other versions
WO2006033682A2 (en
Inventor
Claude L Bertin
Original Assignee
Nantero Inc
Claude L Bertin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc, Claude L Bertin filed Critical Nantero Inc
Priority to CA2570424A priority Critical patent/CA2570424C/en
Publication of WO2006033682A2 publication Critical patent/WO2006033682A2/en
Publication of WO2006033682A3 publication Critical patent/WO2006033682A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit

Abstract

Data storage circuits and components of such circuits constructed using nanotube switching elements. The storage circuits may be stand-alone devices or cells incorporated into other devices or circuits. The data storage circuits include or can be used in latches, master-slave flip-flops, digital logic circuits, memory devices and other circuits. In one aspect of the invention, a master-slave flip-flop is constructed using one or more nanotube switching element-based storage devices. The master storage element or the slave storage element or both may be constructed using nanotube switching elements, for example, using two nanotube switching element-based inverters. The storage elements may be volatile or non-volatile. An equilibration device is provided for protecting the stored data from fluctuations on the inputs. Input buffers and output buffers for data storage circuits of the invention may also be constructed using nanotube switching elements.
PCT/US2005/018537 2004-06-18 2005-05-26 Storage elements using nanotube switching elements WO2006033682A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA2570424A CA2570424C (en) 2004-06-18 2005-05-26 Storage elements using nanotube switching elements

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US58130104P 2004-06-18 2004-06-18
US60/581,301 2004-06-18
US11/032,983 2005-01-10
US11/032,983 US7161403B2 (en) 2004-06-18 2005-01-10 Storage elements using nanotube switching elements

Publications (2)

Publication Number Publication Date
WO2006033682A2 WO2006033682A2 (en) 2006-03-30
WO2006033682A3 true WO2006033682A3 (en) 2006-12-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/018537 WO2006033682A2 (en) 2004-06-18 2005-05-26 Storage elements using nanotube switching elements

Country Status (3)

Country Link
US (3) US7161403B2 (en)
CA (1) CA2570424C (en)
WO (1) WO2006033682A2 (en)

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US7759996B2 (en) 2010-07-20
US7405605B2 (en) 2008-07-29
US20070210845A1 (en) 2007-09-13
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US20060044035A1 (en) 2006-03-02

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