WO2006043645A1 - プローブおよびその製造方法 - Google Patents
プローブおよびその製造方法 Download PDFInfo
- Publication number
- WO2006043645A1 WO2006043645A1 PCT/JP2005/019335 JP2005019335W WO2006043645A1 WO 2006043645 A1 WO2006043645 A1 WO 2006043645A1 JP 2005019335 W JP2005019335 W JP 2005019335W WO 2006043645 A1 WO2006043645 A1 WO 2006043645A1
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- WIPO (PCT)
- Prior art keywords
- columnar
- groove
- probe
- diameter
- contact
- Prior art date
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
Definitions
- the present invention relates to a probe and a method for manufacturing the probe, and, for example, relates to a probe used when performing electrical property inspection of a semiconductor wafer and a method for manufacturing the probe.
- a probe as described in Japanese Patent Application Laid-Open No. 2000-055936 A card is used.
- This probe card plays a role of relaying inspection signals between a tester, which is a test apparatus, and an IC chip when it comes into contact with a wafer electrode pad during inspection.
- This probe card has, for example, a plurality of probe needles corresponding to a plurality of electrode pads formed on an IC chip, and each probe needle and each electrode pad are brought into electrical contact with each other to generate an IC.
- the chip is inspected.
- the probe needle includes a cantilever including a top portion that contacts the electrode pad and an elastic member.
- FIGS. 6A to 6H are diagrams showing a manufacturing process of the probe needle
- FIG. 7 is an external perspective view of the probe needle formed by the manufacturing process of FIGS. 6A to 6H.
- a conventional probe needle will be described with reference to FIGS. 6A to 6H and FIG.
- a resist film 3 is formed on the surface. After exposure through a photomask (not shown), the resist film 3 is developed to form a square opening groove 4 in the resist film 3. After removing the silicon oxide film 2 in the opening 4 portion, anisotropic wet etching is performed on the silicon substrate 1 to form the inverted square frustum-shaped groove 5 as shown in FIG. 6C. As shown in FIG. 2, the resist film 3 and the silicon oxide film 2 are removed.
- a titanium film 6 serving as a seed of plating is formed on the entire surface of the silicon substrate 1.
- the sacrificial layer 7 shown in FIG. 6F is formed by photolithography technology except for the portion corresponding to the cantilever 8 and the portion corresponding to the groove 5, and is formed as shown in FIG. 6G. Except for the sacrificial layer 7 part, the part corresponding to the cantilever 8 and the groove 5 are deposited by plating, for example, nickel alloy, and the sacrificial layer 7 is removed as shown in FIG. An inverted square frustum 9 and a cantilever 8 are formed.
- the probe formed in the manufacturing process shown in FIGS. 6A to 6H has a cantilever 8 portion having a rectangular parallelepiped shape as shown in FIG. 7, for example, a length of 200 to 500 111, a width W Force 1 ⁇ 20 ⁇ 150 / zm, thickness T is 10 ⁇ 20 ⁇ m, top of inverted square frustum 9 is height H is 50 ⁇ 100 ⁇ m, width of tip flat part Wt is about 10 ⁇ 2 m.
- the groove 5 is formed by anisotropic wet etching as shown in FIG. 6C, if the diameter of the groove 5 is reduced, the depth of the groove 5 becomes shallower. Therefore, if the depth of the groove 5 is increased, the diameter must be increased, the diameter of the top is increased, and the pitch of the electrode nodes is reduced. Can not.
- the cantilever 8 comes into contact with the electrode pad and other elements, or the inverted square frustum 9 cannot properly contact the electrode pad. Create a problem. Furthermore, if the inverted square frustum 9 is low, the cantilever 8 will crawl and get in contact with the electrode pad * 5.
- an object of the present invention is to provide a probe that can reliably contact electrode pads arranged at a narrow pitch, and a method for manufacturing the probe.
- the present invention provides a connection portion to a beam portion in a probe including a beam portion that is cantilevered and supported by a probe substrate and a contact that rises from a tip portion of the beam portion.
- the width dimension of the contact base is W and the contact height to the top is H, the dimensional relationship of H / W ⁇ 2 is established.
- the base force of the contactor By making the height to the apex more than twice the width of the base part, It is possible to reliably contact the electrode pads arranged at a narrow pitch without contacting other elements.
- the contact includes a columnar portion that rises with a base force rising and a top portion that extends in a conical shape from the tip of the columnar portion, and the height of the columnar portion is greater than the height of the conical top portion.
- the columnar portion has a cross-sectional shape of the same size over the entire height thereof.
- the columnar part can be formed in the same etching process, so that the manufacturing process can be simplified.
- the columnar portion includes a large-diameter portion positioned on the base side and having a relatively large width dimension, and a small-diameter portion positioned on the distal end side and having a relatively small width dimension. Since the top portion can be formed at the tip of the small diameter portion, the diameter of the top portion can be further reduced.
- the tip end portion of the columnar portion and the base portion of the conical top portion have the same cross-sectional shape. Manufacturing is facilitated by using the same cross-sectional shape.
- the width dimension W of the base of the contact is 100 ⁇ m or less.
- Another aspect of the present invention includes a step of performing anisotropic dry etching on the main surface of the substrate to form a columnar groove, and performing anisotropic wet etching on the bottom of the columnar groove. Forming a conical groove, and forming a probe contact by embedding metal in the conical groove and the columnar groove.
- the probe can be easily manufactured.
- the substrate has a structure in which a first substrate material layer and a second substrate material layer are stacked via boundary layers having different etching rates, and the columnar grooves are The conical groove is formed in the second substrate material layer, and the conical groove is formed in the second substrate material layer.
- boundary layers with different etching rates it is possible to prevent the same anisotropic dry etching from being performed on the second substrate material when the first substrate material is subjected to anisotropic dry etching.
- the boundary layer functions as an etching stopper when the columnar groove is formed.
- the step of forming the contact includes forming a seed for plating on the sidewall of the columnar groove and the bottom of the conical groove, and then depositing a metal on the seed.
- the step of forming the columnar groove includes performing anisotropic dry etching on the main surface of the substrate to form a large-diameter columnar groove having a relatively large diameter, and a large-diameter columnar groove. Forming a small-diameter columnar groove having a relatively small diameter by performing anisotropic dry etching on the bottom of the substrate.
- the method further includes the step of performing anisotropic wet etching on a portion connecting the side wall of the small diameter columnar groove and the side wall of the large diameter columnar groove to form a conical slope.
- the height to the top of the base force of the contactor is set to be twice or more than the width of the base, so that the contactor is arranged at a narrow pitch that does not contact other elements. Secure contact with the electrode pad. Even when the electrode pads are arranged in a plurality of rows at a narrow pitch, the probes can be arranged on the probe card in accordance with the arrangement, and the degree of freedom in arrangement can be increased. Furthermore, since the height of the contact is increased even if the beam is stagnated, it is possible to prevent the beam from coming into contact with an electrode pad or the like.
- FIG. 1 is an external perspective view of a probe needle according to an embodiment of the present invention.
- FIG. 2A is an enlarged view of the probe needle shown in FIG. 1, and is a front view of a columnar portion and a top portion.
- FIG. 2B is an enlarged view of the probe needle shown in FIG. 1, and is a view of the top as viewed from below.
- FIG. 3A is a diagram showing an example in which the cross section of the top of the probe needle is formed in a square shape.
- FIG. 3B is a diagram showing an example in which the cross section of the top of the probe needle is formed in a triangle.
- FIG. 3C is a diagram showing an example in which the cross section of the top of the probe needle is formed into a polygon.
- FIG. 3D is a diagram showing an example in which the cross section of the top of the probe needle is formed into a rectangle.
- FIG. 3E is a diagram showing an example in which the cross section of the top of the probe needle is formed in a circle.
- FIG. 4A is a diagram showing a manufacturing process of the probe needle shown in FIG. 1, in which an NSG film and a resist film are formed on a silicon substrate with a buried insulating layer interposed therebetween.
- FIG. 4B is a diagram showing a manufacturing process of the probe needle shown in FIG. 1, in which columnar grooves are formed in a silicon substrate.
- FIG. 4C The manufacturing process of the probe needle shown in Fig. 1 is shown. It is the figure which exposed the surface of the silicon substrate by dry etching.
- FIG. 4D This is a diagram showing a manufacturing process of the probe needle shown in FIG. 1 and showing an oxide film formed in a columnar groove.
- FIG. 4E shows a manufacturing process of the probe needle shown in FIG. 1, in which an NSG film is formed on the bottom of the columnar part.
- FIG. 4F shows a manufacturing process of the probe needle shown in FIG. 1, with the silicon substrate at the bottom of the columnar part exposed.
- FIG. 4G shows a manufacturing process of the probe needle shown in FIG. 1, and shows a conical groove formed at the bottom of the columnar part.
- FIG. 4H shows a manufacturing process of the probe needle shown in FIG. 1, in which a seed of plating is formed on the side wall and the conical groove of the columnar part.
- FIG. 41 shows a manufacturing process of the probe needle shown in FIG. 1, and shows a resist formed on a seed of plating.
- FIG. 4K is an external perspective view of a probe needle having a cantilever, a columnar portion, and a top formed by the process shown in FIGS. 4A to J.
- FIG. 5A is a diagram showing a probe needle manufacturing process according to another embodiment of the present invention, in which a buried insulating layer is formed between silicon substrates.
- FIG. 5B is a diagram showing a probe needle manufacturing process according to another embodiment of the present invention, in which an NSG film is formed on a silicon substrate.
- FIG. 5C is a diagram showing a probe needle manufacturing process according to another embodiment of the present invention, in which openings are formed in a resist film and an NSG film.
- FIG. 5D is a diagram showing a probe needle manufacturing process according to another embodiment of the present invention, in which columnar grooves are formed in a silicon substrate.
- FIG. 5E is a diagram showing a probe needle manufacturing process according to another embodiment of the present invention, in which the width and depth of the columnar groove are expanded.
- FIG. 5F is a diagram showing a manufacturing process of a probe needle in another embodiment of the present invention.
- FIG. 5 is a view in which a buried insulating layer below a columnar groove is removed.
- FIG. 5G is a diagram showing a probe needle manufacturing process according to another embodiment of the present invention, in which an oxide film is formed on the upper surface, side wall, and bottom of the opening of the columnar groove.
- FIG. 5H is a diagram showing a probe needle manufacturing process according to another embodiment of the present invention, in which an NSG film is formed on an oxide film.
- FIG. 51 is a diagram showing a probe needle manufacturing process according to another embodiment of the present invention, in which the oxide film at the bottoms of the large columnar groove and the small columnar groove is removed.
- FIG. 5J is a diagram showing a manufacturing process of a probe needle according to another embodiment of the present invention, in which a slope is formed on the side wall of the small columnar groove and a conical groove is formed on the bottom.
- FIG. 5K is a view showing a cantilever, a columnar portion, and a top portion formed by the processes of FIGS. 5A to 5J.
- FIG. 6A is a diagram showing a manufacturing process of a conventional probe needle and a diagram showing a silicon substrate.
- FIG. 6B is a diagram showing a conventional probe needle manufacturing process, in which a silicon oxide film and a resist film are formed on a silicon substrate.
- FIG. 6C is a diagram showing a conventional probe needle manufacturing process, in which an inverted square frustum-shaped groove is formed in a silicon substrate.
- FIG. 6D is a diagram showing a conventional probe needle manufacturing process, in which the silicon substrate resist film and the silicon oxide film are removed.
- FIG. 6E A diagram showing a conventional probe needle manufacturing process, in which a titanium film is formed on a silicon substrate.
- [6F] A diagram showing a conventional probe needle manufacturing process in which a sacrificial layer is formed on a titanium film.
- FIG. 6G A diagram showing a manufacturing process of a conventional probe needle, in which plating is deposited on a portion corresponding to a cantilever and a groove.
- FIG. 6H A diagram showing a conventional probe needle manufacturing process, with the sacrificial layer removed.
- FIG. 7 is an external perspective view of a probe needle formed by the manufacturing process shown in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is an external perspective view of a probe needle according to an embodiment of the present invention.
- FIGS. 2A and 2B are enlarged views of the probe needle shown in FIG. 1, and particularly FIG. 2A is a columnar portion. 2B is a front view of the top, and FIG.
- a probe gold plate 20 includes a cantilever 21 as a beam portion, and a columnar portion 22 and a top portion 23 as contacts extending from the tip end portion of the cantilever 21.
- the columnar part 22 is formed at one end of a cantilever 21 supported by a shoulder on the probe substrate, and a top 23 is formed at the tip of the columnar part 22.
- the columnar portion 22 is formed with a height hi of several tens to several hundreds / zm, more preferably about 50 to 200 / ⁇ ⁇ , and the base of the columnar portion 22 serving as a connection point to the cantilever 21. It is formed in a quadrangular prism shape with a width W of several tens / zm, more preferably about 50 m.
- the top 23 is formed to be an inverted quadrangular pyramid having a height h2 of approximately 30 / zm.
- the top portion 23 is formed in a conical shape, and the tip end portion thereof has a rectangular flat surface having a side of approximately 10 m as shown in Fig. 2B. This flat surface is formed to increase the contact area when the top 23 contacts the electrode pad, to reduce the resistance component, and to facilitate current flow.
- the top 23 does not contact the adjacent knots even if the pitch of the electrode pads is reduced. Also, the top 23 is raised from the cantilever 21 by the columnar portion 22 to reduce the diameter of the inverted square pyramid, which is the top 23, and the cantilever 21 is stiffened even if the height h2 of the top 23 is low. The possibility of contact with the electrode pad can be eliminated.
- the probe according to this embodiment has a relatively simple structure, and the height hi + h2 can be increased while the width W of the contactor is reduced, so that the electrode pads are arranged in a plurality of rows at a narrow pitch. Can be arranged on the probe card corresponding to the arrangement, The degree of freedom of the column can be increased.
- the columnar portion 22 shown in FIG. 1 is formed into a quadrangular prism shape, and the top portion 23 is a force formed to be an inverted quadrangular frustum. It may be formed in a polygonal column shape.
- the top 23 may also be formed in the shape of an inverted truncated cone, inverted triangular truncated cone, or inverted polygonal truncated cone corresponding to the shape of the columnar portion 22.
- FIG. 3A to 3E are cross-sectional views showing various examples of the columnar part.
- Fig. 3A shows an example in which the columnar portion 22 is formed as a square column, the width W is the length of the longest diagonal line, and
- Fig. 3B is a columnar portion 22 formed as a triangular column, and the width W is the longest. The length of one side.
- the columnar portion 22 is formed as a polygonal column, and the width W is the length of the longest diagonal line.
- FIG. 3D the columnar portion 22 is formed by a rectangular column having a rectangular cross section, and the width W is the length of the longest diagonal line.
- FIG. 3E the columnar portion 22 is formed of a cylinder, and the width W is a diameter.
- FIG. 4A to 4F are diagrams showing a manufacturing process of the probe needle 20 shown in FIG.
- a substrate material having a two-layer structure laminated through boundary layers having different etching rates is used.
- the main surface of the first layer substrate material By subjecting the main surface of the first layer substrate material to anisotropic dry etching, a rectangular column groove corresponding to the columnar portion 22 is formed, and the second layer substrate material is anisotropically wet etched.
- a groove corresponding to the top 23 of the inverted quadrangular pyramid is formed.
- the columnar portion 22 and the top portion 23 are formed by applying a plating to the groove thus formed.
- As the substrate a substrate material in which a silicon oxide film is previously formed above and below a silicon layer and a substrate material in which a silicon oxide film is formed only on the upper surface of the silicon layer are used in combination.
- an NSG (non-doped silicon oxide film) film 32 is formed on a silicon substrate 31 serving as a first-layer substrate material.
- a buried insulating layer 34 is formed by a CVD method as a boundary layer having a different etching rate between the silicon substrate 31 and the silicon substrate 33 as the second-layer substrate material.
- the buried insulating layer 34 functions as a stopper when the silicon substrate 31 is subjected to anisotropic dry etching, and a silicon oxide film is typically used.
- a silicon nitride film may be used.
- a resist film 35 is formed on the NSG film 32. After exposure through a photomask, the resist film 35 is developed to open a square opening in the resist film 35.
- anisotropic dry etching is performed to form an opening 36 in the NSG film 32, and as shown in FIG. 4B, a deep columnar groove 36a is formed in the silicon substrate 31 so as to extend below the opening 36.
- the surface of the buried insulating layer 34 is exposed.
- the buried insulating layer 34 under the columnar grooves 36a is dry-etched to expose the surface of the silicon substrate 33, the resist film 35 is removed, and then the substrate surface as shown in FIG. 4D.
- An oxide film 37 is formed on the entire side wall and bottom of the columnar groove 36a. At this time, since the NSG film 32 shown in FIG. 4C is included in the oxide film 37, the oxide film 37 on the upper surface of the opening of the columnar groove 36a is thicker than the side wall of the columnar groove 36a.
- an NSG film 38 is formed on the oxide film 37 on the silicon substrate 31 by a CVD method so that the thickness at the bottom of the columnar groove 36a having a relatively large thickness is reduced. Then, when anisotropic dry etching is performed as shown in FIG. 4F, the oxide film 37 on the side wall of the columnar groove 36a becomes thin, but the oxide film 37 on the bottom is removed and the silicon substrate 33 is exposed. . Further, as shown in FIG. 4G, anisotropic wet etching is performed on the silicon substrate 33 using an aqueous KOH solution to form a conical groove 36b having an inverted quadrangular truncated pyramid on the silicon substrate 33 at the bottom of the columnar groove 36a.
- titanium oxide or copper oxide is deposited on the oxide film 37, the side wall of the columnar groove 36a, and the bottom of the conical groove 36b of the inverted square frustum using the CVD method. It is formed as seed 39. Furthermore, as shown in FIG. 41, a resist 40 is formed on the seed 39 using a lithography technique except for the portion corresponding to the cantilever 21, and the region surrounded by the resist 40 and the columnar shape are formed as shown in FIG. For example, a nickel alloy 41 is deposited in the groove 36a and the conical groove 36b and removed from the silicon substrates 31, 33, etc., and as shown in FIG. 4K, a probe having a cantilever 21, a columnar portion 22, and a top portion 23. Needle 20 can be formed.
- the columnar groove 36a corresponding to the columnar portion 22 is formed by anisotropic dry etching
- the conical groove 36b corresponding to the top portion 23 is formed by anisotropic wet etching.
- the columnar portion 22 and the apex portion 23 are formed by the same process, and only the force apex portion 23 is formed by another sacrificial substrate, and the columnar portion Contact 22 Try to wear it.
- FIGS. 5A to 5K are diagrams showing a manufacturing process of a probe needle according to another embodiment of the present invention.
- the stepped portion is formed so that the columnar portion 22 has a large diameter columnar groove and a small diameter columnar groove.
- a buried insulating layer 34 is formed between the silicon substrate 31 and the silicon substrate 33.
- an NSG film 32 is formed on the silicon substrate 31 by the CVD method. To do. After the resist film 35 is formed on the NSG film 32, the resist film 35 is exposed to light through a photomask to develop the resist film 35, a rectangular opening is formed in the resist film 35, and anisotropic dry etching is performed. As shown in FIG. 5C, a rectangular opening 36 is opened in the NSG film 32. As shown in FIG.
- a resist film 35 is formed on the opening 36 except for a portion corresponding to a columnar groove 36c having a smaller diameter than the width of the opening 36, and the silicon substrate 31 is anisotropically etched. Then, a columnar groove 36c having a depth approximately half that of the silicon substrate 31 is formed.
- the resist film 35 is removed, and anisotropic dry etching is performed using the NSG film 32 as a mask to increase the width and depth of the columnar groove 36c as shown in FIG. 5E.
- anisotropic dry etching is performed using the NSG film 32 as a mask to increase the width and depth of the columnar groove 36c as shown in FIG. 5E.
- a two-stage groove is formed: a large-diameter columnar groove 36d and a small-diameter columnar groove 36e below the large-diameter columnar groove 36d.
- the buried insulating layer 34 under the columnar groove 36e is removed by anisotropic dry etching, and as shown in FIG.5G, the top surface, side wall, and bottom of the opening of the columnar groove 36d in the silicon substrate 31 are removed.
- An oxide film 37 is formed on the whole.
- the NSG film 32 shown in FIG. 5F being included in the oxide film 37, the thickness of the oxide film 37 on the upper surface of the opening of the columnar groove 36d increases.
- an NSG film 38 is formed on the oxide film 37 by the CVD method. At this time, the NSG film 38 is formed so that the bottom of the small-diameter columnar groove 36e is thin, and the thickness around the opening of the large-diameter columnar groove 36d is large.
- the NSG film 38 is removed and the bottom portion of the columnar groove 36d and the bottom of the columnar groove 36e in the oxide film 37 are removed. The parts of and are removed.
- the silicon substrates 31 and 33 are anisotropically wet-etched using a KOH aqueous solution, and the upper side of the columnar groove 36e of the small-diameter portion of the silicon substrate 31 has the width of the columnar groove 36d.
- a slope 42 whose width is equal to the width of the columnar groove 36e is formed at the lower part of the equal part, and a conical groove 36f of an inverted square frustum is formed in the silicon substrate 33. Large-diameter columnar groove 36d and slope below it 42 corresponds to the columnar portion 22a having a stepped portion having a different cross-sectional area, and the conical groove 36f corresponds to the top portion 23a.
- the tip portion of the top portion 23a can be tapered further.
- the top 23a can be brought into contact with the electrode pad accurately and reliably.
- the probe of the present invention can be used for a probe card having a plurality of probe needles corresponding to a plurality of electrode pads formed on an IC chip by forming a top at the tip of a pillar portion.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/665,918 US7692434B2 (en) | 2004-10-22 | 2005-10-20 | Probe and method for fabricating the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-308132 | 2004-10-22 | ||
JP2004308132A JP2006119024A (ja) | 2004-10-22 | 2004-10-22 | プローブおよびその製造方法 |
Publications (1)
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WO2006043645A1 true WO2006043645A1 (ja) | 2006-04-27 |
Family
ID=36203061
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PCT/JP2005/019335 WO2006043645A1 (ja) | 2004-10-22 | 2005-10-20 | プローブおよびその製造方法 |
Country Status (6)
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US (1) | US7692434B2 (ja) |
JP (1) | JP2006119024A (ja) |
KR (1) | KR100903842B1 (ja) |
CN (1) | CN100580457C (ja) |
TW (1) | TWI280369B (ja) |
WO (1) | WO2006043645A1 (ja) |
Cited By (1)
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JP2014126363A (ja) * | 2012-12-25 | 2014-07-07 | Enplas Corp | 電気接触子及び電気部品用ソケット |
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KR100546831B1 (ko) * | 2005-08-31 | 2006-01-25 | (주) 마이크로프랜드 | 프로브 카드의 탐침팁 공정 방법 |
KR101306665B1 (ko) * | 2007-01-18 | 2013-09-10 | (주) 미코에스앤피 | 프로브 카드의 탐침 제조 방법 |
JP2008203036A (ja) | 2007-02-19 | 2008-09-04 | Micronics Japan Co Ltd | 電気的接続装置 |
JP4859820B2 (ja) | 2007-12-05 | 2012-01-25 | 東京エレクトロン株式会社 | プローブ |
JP5438908B2 (ja) * | 2008-03-11 | 2014-03-12 | 株式会社日本マイクロニクス | 電気的試験用接触子、これを用いた電気的接続装置及び接触子の製造方法 |
US9229031B2 (en) * | 2010-05-12 | 2016-01-05 | Stmicroelectronics S.R.L. | Probes for testing integrated electronic circuits and corresponding production method |
KR20130141245A (ko) * | 2012-06-15 | 2013-12-26 | 삼성전기주식회사 | 기판 검사용 핀 |
JP2014004776A (ja) * | 2012-06-26 | 2014-01-16 | Mitsuboshi Diamond Industrial Co Ltd | 基板の加工装置 |
US9086433B2 (en) * | 2012-12-19 | 2015-07-21 | International Business Machines Corporation | Rigid probe with compliant characteristics |
KR101601742B1 (ko) * | 2014-07-29 | 2016-03-11 | 서강대학교산학협력단 | 미소 캔틸레버 제조방법 |
TWI609188B (zh) * | 2015-09-25 | 2017-12-21 | 矽品精密工業股份有限公司 | 檢測設備及其檢測方法 |
KR20230032064A (ko) | 2021-08-30 | 2023-03-07 | (주)포인트엔지니어링 | 캔틸레버형 프로브 핀 |
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- 2005-10-20 KR KR1020077008447A patent/KR100903842B1/ko not_active IP Right Cessation
- 2005-10-20 CN CN200580031215A patent/CN100580457C/zh not_active Expired - Fee Related
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Also Published As
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TW200628801A (en) | 2006-08-16 |
JP2006119024A (ja) | 2006-05-11 |
US20080001102A1 (en) | 2008-01-03 |
CN101023363A (zh) | 2007-08-22 |
KR20070050991A (ko) | 2007-05-16 |
TWI280369B (en) | 2007-05-01 |
CN100580457C (zh) | 2010-01-13 |
KR100903842B1 (ko) | 2009-06-25 |
US7692434B2 (en) | 2010-04-06 |
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