WO2006047039A1 - Method and structure for improved led light output - Google Patents
Method and structure for improved led light output Download PDFInfo
- Publication number
- WO2006047039A1 WO2006047039A1 PCT/US2005/034652 US2005034652W WO2006047039A1 WO 2006047039 A1 WO2006047039 A1 WO 2006047039A1 US 2005034652 W US2005034652 W US 2005034652W WO 2006047039 A1 WO2006047039 A1 WO 2006047039A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- algainn
- substrate
- doped
- quantum well
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Definitions
- the operating efficiency of light emitting diodes may be improved in a number of ways. These include improvements in the quality of the semiconductor layers and the design of the structure to maximize coupling of light out of the LED.
- the operating efficiency of LEDs based on AlGaInN or InGaN decreases as the net drive current is increased as is shown in graph 110 of FIG. 1 for a green
- GaInN LED This effect exists in addition to the well-known effect in LEDs where efficiency decreases due to heating brought on by increases in the drive current. The effect limits the performance of AlGaInN or InGaN at high drive currents. Additionally, for AlGaInN or InGaN LEDs, a wavelength shift to shorter wavelengths occurs as the current increases.
- multiple active regions in series separated by tunnel junctions are incorporated into AlGaInN or InGaN LEDs.
- LEDs in accordance with the invention require higher drive voltages but the current and current densities are reduced by a factor of n, where n is the number of active regions.
- the ability to operate at a lower drive current improves the efficiency of the AlGaInN or InGaN LEDs and reduces the wavelength shift due to drive currents.
- FIG. 1 shows efficiency roll-off versus current.
- FIG. 2 shows an embodiment in accordance with the invention
- FIG. 3 shows a schematic of an LED structure in accordance with the invention.
- FIG. 4 shows the shows the shift of dominant wavelength with the forward drive current.
- FIG. 5 shows the relative efficiency as a function of wavelength for a constant drive current.
- FIG. 2 shows LED structure 200 in accordance with the invention.
- Quantum well active region 220 typically including one to ten InGaN quantum wells and typically separated from one another by GaN barrier layers, is grown over AlGaInN cladding layer 215.
- Quantum well active region 220 is followed by growing p-type AlGaInN cladding layer 224 to a thickness typically in the range from about 0.03 ⁇ m to about 0.5 ⁇ m thick.
- Next tunnel junction 225 is formed by growing heavily doped p++ AlGaInN layer 226 to a thickness typically in the range from about 100 to 500 angstroms, followed by growing heavily doped n++ AlGaInN layer 227 to a thickness typically in the range from about 100 to 500 angstroms.
- P++ AlGaInN layer 226 is heavily p doped, typically with magnesium to a concentration typically in the range from about 6 • 10 19 /cm 3 to about 1 • 10 20 /cm 3 .
- N++ AlGaInN layer 227 is heavily n doped, typically with silicon to a concentration much greater than 1 • 1 0 20 /cm 3 , for example, in the range from about 2 • 10 20 / cm 3 to about 3 ⁇ 10 20 / cm 3 .
- Layer structure 297 comprises n-type AlGaInN cladding layer 215, quantum well active region 220, p- type AlGaInN cladding layer 224 and tunnel junction 225. Following tunnel junction 225, n-type AlGaInN cladding layer 230 is grown. Then second quantum well active region 235 is grown over n-type AlGaInN cla_dding layer 230. Second quantum well active region 235 is similar to quantum well active region 220.
- P- type AlGaInN cladding layer 240 is susbsequently grown over quantum well active region 235.
- Next tunnel junction 245 is formed by growing p++ AlGaInN layer 246 to a thickness typically in the range from about 100 to 500 angstroms, followed by n-H- AlGaInN layer 247 to a thickness typically in the range from about 100 to 500 angstroms.
- P-H- AlGaInN layer 246 is heavily p doped, typically with magnesium to a concentration in the range from about 6 • 10 19 /cira 3 to about 1 • 10 20 /cm 3 .
- N-H- AlGaInN layer 247 is heavily n doped, typically with silicon to a concentration much greater than 1 • 10 20 /cm 3 , for example, in the range from about 2 ⁇ 10 20 / cm 3 to about 3 • 10 20 / cm 3 .
- Layer structure 299 functions as an LIED and is the basic building block for LED structure 200.
- Layer structure 299 comprises n-type AlGaInN cladding layer 230, quantum well active region 235, p- type AlGaInN cladding layer 240 and tunnel junction 245.
- Layer structure 299 may be repeated an arbitrary number of times in the vertical stack for LED structure 2O0, as desired.
- n-type AlGaInN layer is grown over the last tunnel junction in the vertical stack, for example, n-type AlGaInN cladding layer 250 is grown over tunnel junction 245 for LED structure 200.
- Quantum well active region 255 similar to quantum well active regions 220 and 235, is then grown over n-type AlGaInN cladding layer 250 and p-type AlGaInN cladding layer 270 is grown over quantum well active region 250.
- Layer structure 298 comprises n-type AlGaInN cladding layer 250, quantum well active region 255 and p- type AlGaInN cladding layer 270. Layer structure 298 functions as an LED. Tunnel junctions 245 and 225 in FIG. 2 are reverse biased in the operation of LED structure 200.
- Reverse biasing tunnel junctions 245 and 255 allows the current to flow through active regions 255, 235 and 220 in series. If there are a total of n quantuum well active regions in LED structure 200, an applied voltage V to LED structure 200 will be divided approximately (because of possible parasitic voltage drops across contacts) equally across the n quantum well active regions so that there is a voltage drop of V/n across each layer structure 299 where each layer structure 299 is associated with a quantum well active region. This reduces the current and also the current density by a factor n in each quantum well active region 220, 235 and 255 while increasing the efficiency of LED structure 200. For example, with respect to FIG.
- FIG. 3 shows a schematic of LED structure 200 indicating that layer structures 297, 299 and 298 function as LEDs. Typically, in an embodiment in accordance with the invention, a total of about two to ten layer structures is used.
- Graph 410 in FIG. 4 shows the shift of dominant wavelength with the forward drive current.
- the wavelength typically shifts towards shorter wavelengths as the drive current increases as seen in graph 410.
- Graph 510 in FIG. 5 shows the relative efficiency as a function of wavelength for a constant drive current of about 20 mA. The relative efficiency improves as the In amount is decreased.
- quantum well active regions are grown with the appropriate composition of InGa(Al)N. If operation of the LED occurs at less than the highest forward drive current in accordance with the invention, the dominant wavelength will be longer. Hence, a composition with less In is used to obtain the same desired dominant wavelength while improving the efficiency of the LED.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007537902A JP2008518440A (en) | 2004-10-22 | 2005-09-28 | Method and structure for improving the output of LED light |
EP05798843A EP1803158A4 (en) | 2004-10-22 | 2005-09-28 | Method and structure for improved led light output |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/971,380 | 2004-10-22 | ||
US10/971,380 US7095052B2 (en) | 2004-10-22 | 2004-10-22 | Method and structure for improved LED light output |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006047039A1 true WO2006047039A1 (en) | 2006-05-04 |
Family
ID=36228108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/034652 WO2006047039A1 (en) | 2004-10-22 | 2005-09-28 | Method and structure for improved led light output |
Country Status (7)
Country | Link |
---|---|
US (1) | US7095052B2 (en) |
EP (1) | EP1803158A4 (en) |
JP (1) | JP2008518440A (en) |
KR (1) | KR20070068303A (en) |
CN (1) | CN1910755A (en) |
TW (1) | TWI433345B (en) |
WO (1) | WO2006047039A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008040274A1 (en) * | 2006-09-28 | 2008-04-10 | Osram Opto Semiconductors Gmbh | Led semiconductor body and use of an led semiconductor body |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100987451B1 (en) * | 2003-12-04 | 2010-10-13 | 엘지전자 주식회사 | Flat luminescence device |
US20070029555A1 (en) * | 2005-08-04 | 2007-02-08 | Lester Steven D | Edge-emitting LED light source |
JP5011699B2 (en) * | 2005-10-18 | 2012-08-29 | 住友電気工業株式会社 | Nitride semiconductor light emitting device |
DE102006051745B4 (en) * | 2006-09-28 | 2024-02-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED semiconductor body and use of an LED semiconductor body |
DE102006046038A1 (en) | 2006-09-28 | 2008-04-03 | Osram Opto Semiconductors Gmbh | LED semiconductor body for e.g. vehicle lighting, has radiation-generating active layers adjusted to operating voltage such that voltage dropping at series resistor is larger as voltage dropping at semiconductor body |
DE102008028036A1 (en) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor body with tunnel junction and method for producing such |
DE102008028345A1 (en) * | 2008-06-13 | 2009-12-17 | Osram Opto Semiconductors Gmbh | Semiconductor body and method for producing a semiconductor body |
JP2013544436A (en) * | 2010-11-02 | 2013-12-12 | コーニンクレッカ フィリップス エヌ ヴェ | Group III nitride light-emitting device |
TWI555226B (en) | 2011-07-12 | 2016-10-21 | 晶元光電股份有限公司 | A light-emitting element with multiple light-emitting stacked layers |
US8927958B2 (en) * | 2011-07-12 | 2015-01-06 | Epistar Corporation | Light-emitting element with multiple light-emitting stacked layers |
CN102916088B (en) * | 2011-08-01 | 2015-12-02 | 晶元光电股份有限公司 | There is the light-emitting component of the luminous lamination of multilayer |
DE102011115659A1 (en) * | 2011-09-28 | 2013-03-28 | Osram Opto Semiconductors Gmbh | Photovoltaic semiconductor chip |
TWI466343B (en) * | 2012-01-06 | 2014-12-21 | Phostek Inc | Light-emitting diode device |
CN103378121A (en) * | 2012-04-27 | 2013-10-30 | 华夏光股份有限公司 | Light emitting diode device |
CN103779450A (en) * | 2012-10-17 | 2014-05-07 | 甘志银 | Integration method for increasing luminous power of LED |
FR3003402B1 (en) * | 2013-03-14 | 2016-11-04 | Centre Nat Rech Scient | MONOLITHIC LIGHT EMITTING DEVICE. |
CN104393131B (en) * | 2014-11-07 | 2017-06-30 | 深圳市九洲光电科技有限公司 | Prepare the method and optical pumping white light LEDs of optical pumping white light LEDs |
KR101651923B1 (en) * | 2014-12-31 | 2016-08-29 | 최운용 | Light Emitting Diode With A High Operating Voltage And Method Of Manufacturing The Same |
JP7122119B2 (en) * | 2017-05-25 | 2022-08-19 | 昭和電工光半導体株式会社 | light emitting diode |
KR101931798B1 (en) * | 2017-09-19 | 2018-12-21 | 주식회사 썬다이오드코리아 | Multi tunnel junction light emitting diode |
US10892296B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
JP7302814B2 (en) * | 2019-06-26 | 2023-07-04 | ウシオ電機株式会社 | semiconductor light emitting device |
JP7149486B2 (en) | 2020-04-21 | 2022-10-07 | 日亜化学工業株式会社 | Method for manufacturing light-emitting element |
JPWO2022054877A1 (en) | 2020-09-11 | 2022-03-17 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6163038A (en) * | 1997-10-20 | 2000-12-19 | Industrial Technology Research Institute | White light-emitting diode and method of manufacturing the same |
US20030197169A1 (en) * | 2002-04-17 | 2003-10-23 | Tekcore Co., Ltd. | Gallium nitride-based semiconductor light emitting device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212706A (en) * | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
US6760357B1 (en) * | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
JP2001085737A (en) * | 1999-09-10 | 2001-03-30 | Sharp Corp | Nitride semiconductor light-emitting element |
JP2001298214A (en) * | 2000-02-10 | 2001-10-26 | Sharp Corp | Semiconductor light-emitting element and method of manufacturing the same |
US6700912B2 (en) * | 2000-02-28 | 2004-03-02 | Fuji Photo Film Co., Ltd. | High-output semiconductor laser element, high-output semiconductor laser apparatus and method of manufacturing the same |
US6787814B2 (en) * | 2000-06-22 | 2004-09-07 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device and production method thereof |
US6724013B2 (en) * | 2001-12-21 | 2004-04-20 | Xerox Corporation | Edge-emitting nitride-based laser diode with p-n tunnel junction current injection |
US6822991B2 (en) * | 2002-09-30 | 2004-11-23 | Lumileds Lighting U.S., Llc | Light emitting devices including tunnel junctions |
-
2004
- 2004-10-22 US US10/971,380 patent/US7095052B2/en active Active
-
2005
- 2005-08-16 TW TW094127873A patent/TWI433345B/en not_active IP Right Cessation
- 2005-09-28 KR KR1020067014106A patent/KR20070068303A/en not_active Application Discontinuation
- 2005-09-28 CN CNA2005800020945A patent/CN1910755A/en active Pending
- 2005-09-28 WO PCT/US2005/034652 patent/WO2006047039A1/en active Application Filing
- 2005-09-28 EP EP05798843A patent/EP1803158A4/en not_active Withdrawn
- 2005-09-28 JP JP2007537902A patent/JP2008518440A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6163038A (en) * | 1997-10-20 | 2000-12-19 | Industrial Technology Research Institute | White light-emitting diode and method of manufacturing the same |
US20030197169A1 (en) * | 2002-04-17 | 2003-10-23 | Tekcore Co., Ltd. | Gallium nitride-based semiconductor light emitting device |
Non-Patent Citations (1)
Title |
---|
See also references of EP1803158A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008040274A1 (en) * | 2006-09-28 | 2008-04-10 | Osram Opto Semiconductors Gmbh | Led semiconductor body and use of an led semiconductor body |
US8115219B2 (en) | 2006-09-28 | 2012-02-14 | Osram Opto Semiconductors Gmbh | LED semiconductor body and use of an LED semiconductor body |
KR101406385B1 (en) * | 2006-09-28 | 2014-06-13 | 오스람 옵토 세미컨덕터스 게엠베하 | Led semiconductor body and use of an led semiconductor body |
Also Published As
Publication number | Publication date |
---|---|
EP1803158A4 (en) | 2008-04-30 |
CN1910755A (en) | 2007-02-07 |
US20060097269A1 (en) | 2006-05-11 |
EP1803158A1 (en) | 2007-07-04 |
TWI433345B (en) | 2014-04-01 |
JP2008518440A (en) | 2008-05-29 |
KR20070068303A (en) | 2007-06-29 |
TW200614551A (en) | 2006-05-01 |
US7095052B2 (en) | 2006-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7095052B2 (en) | Method and structure for improved LED light output | |
US7626209B2 (en) | Light emitting diode having active region of multi quantum well structure | |
KR101327342B1 (en) | Group iii nitride led with undoped cladding layer and multiple quantum well | |
US9257599B2 (en) | Semiconductor light emitting device including hole injection layer | |
JP5242039B2 (en) | Nitride semiconductor light emitting device | |
JP4954536B2 (en) | Nitride semiconductor light emitting device | |
KR100604406B1 (en) | Nitride semiconductor device | |
JP5404628B2 (en) | Optoelectronic semiconductor chip with multiple quantum well structure | |
KR101267154B1 (en) | semiconductor light emitting device | |
JP5150811B2 (en) | III-V GaN compound semiconductor device | |
KR101423720B1 (en) | Light emitting device having active region of multi quantum well structure and method for fabricating the same | |
US8279904B2 (en) | Semiconductor light-emitting device | |
KR20090002199A (en) | Semiconductor light-emitting device and manufacturing method thereof | |
KR100495824B1 (en) | Semiconductor LED device | |
EP2009707B1 (en) | Light emitting diode and method for manufacturing the same | |
JP2005093578A (en) | Group iii nitride-based compound semiconductor element | |
JP2008263196A (en) | Light-emitting element | |
US6875995B2 (en) | Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor | |
KR100935379B1 (en) | Light emitting diode having active region of multi quantum well structure | |
KR100663911B1 (en) | Light emitting diode | |
JP2023076104A (en) | Light-emitting element | |
KR20090065613A (en) | Light emitting diode having active region of multi quantum well structure | |
JP2011091103A (en) | Light-emitting element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BW BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE EG ES FI GB GD GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV LY MD MG MK MN MW MX MZ NA NG NO NZ OM PG PH PL PT RO RU SC SD SG SK SL SM SY TJ TM TN TR TT TZ UG US UZ VC VN YU ZA ZM |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SZ TZ UG ZM ZW AM AZ BY KG MD RU TJ TM AT BE BG CH CY DE DK EE ES FI FR GB GR HU IE IS IT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005798843 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200580002094.5 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067014106 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007537902 Country of ref document: JP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2005798843 Country of ref document: EP |