WO2006050372A3 - Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking - Google Patents

Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking Download PDF

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Publication number
WO2006050372A3
WO2006050372A3 PCT/US2005/039509 US2005039509W WO2006050372A3 WO 2006050372 A3 WO2006050372 A3 WO 2006050372A3 US 2005039509 W US2005039509 W US 2005039509W WO 2006050372 A3 WO2006050372 A3 WO 2006050372A3
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WO
WIPO (PCT)
Prior art keywords
sinking
resistances
improved heat
fabrication
light
Prior art date
Application number
PCT/US2005/039509
Other languages
French (fr)
Other versions
WO2006050372A2 (en
Inventor
Arpan Chakraborty
Likun Shen
Umesh K Mishra
Original Assignee
Univ California
Arpan Chakraborty
Likun Shen
Umesh K Mishra
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Publication date
Application filed by Univ California, Arpan Chakraborty, Likun Shen, Umesh K Mishra filed Critical Univ California
Priority to KR1020117027215A priority Critical patent/KR101344512B1/en
Publication of WO2006050372A2 publication Critical patent/WO2006050372A2/en
Publication of WO2006050372A3 publication Critical patent/WO2006050372A3/en

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    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
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    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

The present invention discloses a plurality of interdigitated pixels arranged in an array, having a very low series-resistances with improved current spreading and improved heat-sinking. Each pixel is a square with sides of dimension l. The series resistance is minimized by increasing the perimeter of an active region for the pixels. The series resistance is also minimized by shrinking the space between a mesa and n-contact for each pixel.
PCT/US2005/039509 2004-11-01 2005-11-01 Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking WO2006050372A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020117027215A KR101344512B1 (en) 2004-11-01 2005-11-01 Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62402604P 2004-11-01 2004-11-01
US60/624,026 2004-11-01

Publications (2)

Publication Number Publication Date
WO2006050372A2 WO2006050372A2 (en) 2006-05-11
WO2006050372A3 true WO2006050372A3 (en) 2008-07-31

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US (7) US7518305B2 (en)
KR (2) KR101344512B1 (en)
WO (1) WO2006050372A2 (en)

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KR20110053382A (en) * 2008-09-08 2011-05-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Electrically pixelated luminescent device
US8513685B2 (en) 2008-11-13 2013-08-20 3M Innovative Properties Company Electrically pixelated luminescent device incorporating optical elements
WO2012020346A1 (en) * 2010-08-10 2012-02-16 Koninklijke Philips Electronics N.V. Shunting layer arrangement for leds
KR101892923B1 (en) * 2011-09-22 2018-08-29 엘지이노텍 주식회사 The light emitting device
KR101422037B1 (en) * 2012-09-04 2014-07-23 엘지전자 주식회사 Display device using semiconductor light emitting device
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JP6294674B2 (en) * 2014-01-10 2018-03-14 旭化成エレクトロニクス株式会社 Light emitting element
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US11205677B2 (en) * 2017-01-24 2021-12-21 Goertek, Inc. Micro-LED device, display apparatus and method for manufacturing a micro-LED device
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US11538963B1 (en) * 2018-02-20 2022-12-27 Ostendo Technologies, Inc. III-V light emitting device having low Si—H bonding dielectric layers for improved P-side contact performance
FR3078442B1 (en) * 2018-02-26 2023-02-10 Valeo Vision ELECTRO-LUMINESCENT LIGHT SOURCE INTENDED TO BE POWERED BY A VOLTAGE SOURCE
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Publication number Publication date
US9263423B2 (en) 2016-02-16
US8796912B2 (en) 2014-08-05
US20140299900A1 (en) 2014-10-09
KR20120001805A (en) 2012-01-04
US8922110B2 (en) 2014-12-30
US20150076533A1 (en) 2015-03-19
US8274206B2 (en) 2012-09-25
US7518305B2 (en) 2009-04-14
US20110156572A1 (en) 2011-06-30
KR101344512B1 (en) 2013-12-23
US7911126B2 (en) 2011-03-22
US20090230411A1 (en) 2009-09-17
KR101216622B1 (en) 2012-12-31
US20130015760A1 (en) 2013-01-17
US9076711B2 (en) 2015-07-07
KR20070089142A (en) 2007-08-30
WO2006050372A2 (en) 2006-05-11
US20150294960A1 (en) 2015-10-15
US20060091786A1 (en) 2006-05-04

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