WO2006051527A2 - Integrated circuit die with logically equivalent bonding pads - Google Patents

Integrated circuit die with logically equivalent bonding pads Download PDF

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Publication number
WO2006051527A2
WO2006051527A2 PCT/IL2005/001168 IL2005001168W WO2006051527A2 WO 2006051527 A2 WO2006051527 A2 WO 2006051527A2 IL 2005001168 W IL2005001168 W IL 2005001168W WO 2006051527 A2 WO2006051527 A2 WO 2006051527A2
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WO
WIPO (PCT)
Prior art keywords
integrated circuit
bonding pads
dies
circuit die
die
Prior art date
Application number
PCT/IL2005/001168
Other languages
French (fr)
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WO2006051527A3 (en
Inventor
Amir Ronen
Original Assignee
M-Systems Flash Disk Pioneers Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by M-Systems Flash Disk Pioneers Ltd. filed Critical M-Systems Flash Disk Pioneers Ltd.
Priority to KR1020077010651A priority Critical patent/KR101252261B1/en
Publication of WO2006051527A2 publication Critical patent/WO2006051527A2/en
Publication of WO2006051527A3 publication Critical patent/WO2006051527A3/en

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    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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Definitions

  • the present invention relates to integrated circuits and, more particularly, to an integrated circuit die, two of whose bonding pads, on opposite sides of the die, share a common logical function.
  • a Multi-Chip Package is two or more integrated circuits (ICs), fabricated on respective semiconductor dies such as silicon dies, and packaged in a common package so as to function together as a single "chip".
  • a System In a Package (SIP) is a MCP in which one of the IC dies is a processor die and the other IC die(s) is/are memory dies, for example flash memory dies or Random Access Memory (RAM) dies.
  • Non-SIP MCPs commonly include memory dies of the same or different types.
  • MCPs memory dies that commonly are packaged together in MCPs
  • SRAM dies SRAM dies
  • Pseudo RAM (PSRAM) dies Pseudo RAM (PSRAM) dies
  • flash memory dies such as NAND flash dies and NOR flash dies.
  • MCPs and SIPs are commonly used in consumer appliances such as cellular telephone handsets in order to make the appliances compact.
  • Figure 1 is a schematic plan view of the internal structure of a MCP 10 with two stacked IC dies 12 and 14.
  • Die 12 is stacked above die 14, which is on a substrate 16. Both dies 12 and 14 include wire bonding pads 18. Bonding pads 18 of die 12 are connected by electrically conducting wire bonds 20 to bonding pads 18 of die 14. Bonding pads 18 of die 14 are connected by electrically conducting wire bonds 22 to pads (not shown) of substrate 16 that are electrically connected to the pins or balls (not shown) of MCP 10. Alternatively, some or all of the bonding pads 18 of dies 12 and 14, that are connected to each other, are connected to each other via pads of substrate 16, with those bonding pads 18 of dies 12 and 14 connected to those pads of substrate 16 by electrically conducting wire bonds.
  • bonding pads 18 of die 12 are electrically connected directly to the pins or balls of MCP 10. All such electrical connections of bonding pads of one die to bonding pads of another die, that are via only electrical conductors such as wire bonds 20 and/or pads of substrate 16, with no electronic components or electronic circuitry intervening, are considered herein to be "direct" electrical connections.
  • the need to adapt a die 12 to two dies 14 with different layouts of their bonding pads 18 (or a die 14 to two dies 12 with different layouts of their bonding pads 14) complicates the internal structure of MCP 10 and the process of assembling MCP 10, or alternatively requires the manufacturing of different versions of the same die, with different pad locations. There is thus a widely recognized need for, and it would be highly advantageous to have, an IC die that is adapted to assembly in a MCP with a variety of other IC dies with different respective layouts of their bonding pads.
  • an integrated circuit die including a plurality of bonding pads, wherein two of the bonding pads, that share a common logical function, are separated by at least about a width of the integrated circuit die.
  • a method of producing system- in-package devices including the steps of: (a) providing two substantially identical first integrated circuit dies, each first integrated circuit die having a plurality of bonding pads, wherein two of the bonding pads share a common logical function; (b) providing a second integrated circuit die that is functionally different from the first integrated circuit dies, the second integrated circuit die having a plurality of bonding pads; (c) providing a third integrated circuit die that is functionally identical to the second integrated circuit die, the third integrated circuit die having a plurality of bonding pads, the bonding pads of the third integrated circuit die having a different geometric arrangement than the bonding pads of the second integrated circuit die; (d) producing a first system- in-package device by steps including directly electrically connecting a first of the two bonding pads, of one of the first integrated circuit dies, that share the common logical function, to one of the bonding pads of the second integrated circuit die; and (e) producing a second system-in-package device by steps including directly
  • a method of producing multichip package devices including the steps of: (a) providing a plurality of substantially identical first integrated circuit dies, each first integrated circuit die having a plurality of bonding pads, wherein two of the bonding pads share a common logical function; (b) providing a plurality of second integrated circuit dies, each second integrated circuit die having a plurality of bonding pads; (c) producing a first multichip package device by steps including: (i) mounting one of the first integrated circuit dies in a stacked relationship with one of the second integrated circuit dies, and (ii) directly electrically connecting a first of the two bonding pads of the one first integrated circuit die that share the common logical function to a first of the bonding pads of the one second integrated circuit die; and (d) producing a second multichip package device by steps including: (i) mounting another of the first integrated dies in a stacked relationship with another of the second integrated circuit dies, and (ii) directly electrically connecting a second of the two bonding pads of
  • An integrated circuit die of the present invention includes a plurality of bonding pads, with two of the bonding pads, separated by the width of the die, sharing a common logical function. That the common function is a "logical" function means that the pads are used for a function related to signal processing such as signal input or for signal output, rather than e.g. for power or ground. Note that two pads that share a common logical function can be used independently of each other. Usually, one of the two pads is used and the other is left unused.
  • the "width" of the die is the diameter of the smallest circle that can be inscribed inside the die. In the case of a rectangular die, the "width" of the die is the length of the short sides of the rectangle.
  • the two pads that share a common logical function are on opposite sides of the die. It is known to have two bonding pads in the same IC die with a common logical function.
  • the electronic wristwatch described by Kawamura et al. in US Patent No. 4,093,992 includes two IC dies 558 and 559 in which both pad 34 and pad 36 are clock signal terminals. It is the conventional wisdom, however, that such bonding pads should be on the same side of their die, as in the case in Kawamura et al., to keep the electrical path between the two bonding pads as short as possible.
  • the innovative aspect of the IC die of the present invention is that in the context of MCPs it sometimes is more convenient to put two bonding pads that share a common logical function on opposite sides of the die, despite the necessarily longer electrical path that connects the two bonding pads.
  • the IC die is rectangular, and the two logical pads that share a common logical function are separated by at least about the length of the short sides of the rectangle. Most preferably, the two pads that share a common logical function are separated by at least about the length of the long sides of the rectangle.
  • the IC die also includes an electronic circuit that is operationally connected to the two bonding pads that share the common logical function.
  • the purpose of the electronic circuit is to implement that common logical function. If the logical function is signal input then the electronic circuit most preferably includes an input buffer. If the logical function is signal output then the electronic circuit most preferably includes an output buffer.
  • the IC die also includes an electrical conductor that directly connects the two bonding pads that share the common logical function.
  • the scope of the present invention also includes a method of producing SIP devices.
  • the following are provided: two substantially identical first IC dies, a second IC die and a third IC die.
  • the second and third IC dies are functionally identical and are functionally different from the first IC dies.
  • Each first IC die has a plurality of bonding pads, with two of the bonding pads sharing a common logical function.
  • Both the second IC die and the third IC die have respective pluralities of bonding pads, but the bonding pads of the third IC die have a different geometric arrangement than the bonding pads of the second IC die.
  • a first SIP device is produced by steps including directly electrically connecting one of the two bonding pads, of one of the two first IC dies, that share the common logical function, to one of the bonding pads of the second IC die.
  • a second SIP device is produced by steps including directly electrically connecting the other of the two bonding pads, of the other first IC die, that share the common logical function, to one of the bonding pads, of the third IC die, that is functionally identical to but geometrically different from the bonding pad of the second IC die that is used equivalently in the first SIP device. That the bonding pad of the third IC die is "geometrically different" from the bonding pad of the second IC die means that the two bonding pads are at different respective locations on their respective dies.
  • the first IC dies are memory dies and the second and third IC dies are processor dies.
  • the first IC dies are processor dies and the second and third IC dies are memory dies.
  • the scope of the present invention also includes a method of producing MCP devices.
  • Respective pluralities of first and second IC dies are provided.
  • Each IC die has a plurality of bonding pads.
  • two of the bonding pads share a common logical function.
  • One MCP is produced by steps including stacking one of the first IC dies above or below one of the second IC dies and directly electrically connecting one of the two bonding pads of the first IC die that share the common logical function to one of the bonding pads of the second IC die.
  • Another MCP is produced by steps including stacking another one of the first IC dies above or below another one of the second IC dies and directly electrically connecting the other of the two bonding pads of the first IC die that share the common logical function to a different one of the bonding pads of the second IC die.
  • the innovative concept of this aspect of the present invention is that although it is obvious to have IC dies such as those taught by Kawamura et al. stacked together with other dies in MCPs, it is not obvious to take advantage of the presence of the two functionally equivalent bonding pads of such IC dies to produce two different kinds of MCPs with different functionalities.
  • FIG. 1 is a schematic plan view of the internal structure of a typical prior art MCP
  • FIGs. 2 A and 2B are schematic plan views of two SIPs of the present invention
  • FIG. 3 is a partial schematic diagram of the internal structure of an IC die of the present invention in which the two functionally equivalent bonding pads are used for signal output;
  • FIG. 4 is a partial schematic diagram of the internal structure of an IC die of the present invention in which the two functionally equivalent bonding pads are used for signal input;
  • FIGs. 5 A and 5B are schematic plan views of two MCPs of the present invention.
  • the present invention is of an IC die which can be packaged conveniently with other IC dies from a variety of suppliers in a MCP. Specifically, the present invention can be used to make SIPs using IC dies, particularly memory dies, obtained from a variety of suppliers.
  • FIGS. 2 A and 2B are schematic plan views of two SIPs 30 and 50 of the present invention.
  • SIPs 30 and 50 include identical flash memory dies 32, with bonding pads 34A-34H.
  • SIPs 30 and 50 are produced by a manufacturer of flash memory dies 32 who obtains processor dies from various suppliers and packages those processor dies together with the manufacturer's own flash memory dies 32 in SIPs such as SIPs 30 and 50.
  • memory die 32 is stacked above, and bonded to, a processor die 36, obtained from a first supplier, with bonding pads 38A-38G.
  • memory die 32 is stacked above, and bonded to, a processor die 56, obtained from a second supplier, with bonding pads 58A-58G. In both cases, the bonding is effected using wire bonds 40.
  • Processor dies 36 and 56 are bonded to respective substrates 42 using wire bonds 44.
  • Bonding pads 58A-58G have the same logical functionality as bonding pads 38A-38G, but are laid out differently on processor die 56 than on processor die 36. Specifically, although bonding pads 38A-38F and bonding pads 58A-58F have equivalent locations on their respective dies, bonding pads 38G and 58G are on opposite sides of their respective dies.
  • bonding pads 34G and 34H on opposite sides of memory die 32, are given identical logical functions.
  • bonding pad 34G is bonded to bonding pad 38G.
  • bonding pad 34H is bonded to bonding pad 58G.
  • the producer of SIPs 30 and 50 is free to obtain processor dies 36 and 56 from two different suppliers.
  • FIG. 3 is a partial schematic diagram of the internal structure of flash memory die 32 in the case that the logical function of bonding pads 34G and 34H is signal output.
  • Bonding pads 34G and 34H are connected, via respective amplifiers 62 and 64 and a common electrical conductor 66, to an output buffer 68 that drives both bonding pads 34G and 34H. Because only one of bonding pads 34G and 34H is used in any specific SIP that includes die 32, the other bonding pad necessarily is dangling. This causes an additional parasitic capacitance, and the internal timing of die 32 is designed accordingly.
  • FIG. 4 is a partial schematic diagram of the internal structure of flash memory die 32 in the case that the logical function of bonding pads 34G and 34H is signal input.
  • Bonding pads 34G and 34H are connected via respective amplifiers 72 and 74 and a common electrical conductor 76 to an input buffer 78.
  • a second electrical conductor 70 shorts bonding pads 34G and 34H so that neither bonding pad is dangling. Without electrical conductor 70, the unused bonding pad 34G or 34H might drive the input driver to the wrong level, thereby creating an electrical contention. Having two bonding r pads 34G and 34H increases the parasitic capacitance on the input buffers. The internal timing of die 32 is designed accordingly.
  • FIGS 5 A and 5B are schematic plan views of two MCPs 80 and 80' of the present invention.
  • MCPs 80 and 80' include identical flash memory dies 32 stacked above and bonded to identical memory dies 82 that could be flash dies but could alternatively be other kinds of memory dies.
  • Each memory die 82 has bonding pads 84 A-H. Bonding pads 84G and 84H have similar but not identical functionalities.
  • bonding pads 34A-34F are bonded to bonding pads 84A-84F using wire bonds 86 and bonding pads 84A-84F are bonded to a substrate 90 using wire bonds 88.
  • MCP 80 a wire bond 86 is used to bond bonding pad 34G to bonding pad 84G, a wire bond 88 is used to bond bonding pad 84G to substrate 90, and bonding pads 34H and 84H are not used.
  • MCP 80' a wire bond 86 is used to bond bonding pad 34H to bonding pad 84H, a wire bond 88 is used to bond bonding pad 84H to substrate 90, and bonding pads 34G and 84G are not used.
  • two different MCPs 80 and 80' with slightly different functionalities are provided using identical components 32 and 82. While the invention has been described with respect to a limited number of embodiments, it will be appreciated that many variations, modifications and other applications of the invention may be made.

Abstract

An integrated circuit (IC) die includes two bonding pads, that share a common logical function, such as signal input or signal output, separated by the width of the die, and preferably on opposite sides of the die. System-in-package devices are produced by steps including directly electrically connecting one or the other bonding pad to bonding pads of other, functionally different IC dies, with the bonding pads of the other IC dies, to which are connected bonding pads of common logical function of the IC dies of the present invention, being functionally identical but geometrically different. Multchip package devices are produced by stacking the IC dies of the present invention with other IC dies and directly electrically connecting one or the other bonding pad to different bonding pads of the other IC dies.

Description

INTEGRATED CIRCUIT DIE WITH LOGICALLY EQUIVALENT BONDING PADS
FIELD AND BACKGROUND OF THE INVENTION The present invention relates to integrated circuits and, more particularly, to an integrated circuit die, two of whose bonding pads, on opposite sides of the die, share a common logical function.
A Multi-Chip Package (MCP) is two or more integrated circuits (ICs), fabricated on respective semiconductor dies such as silicon dies, and packaged in a common package so as to function together as a single "chip". A System In a Package (SIP) is a MCP in which one of the IC dies is a processor die and the other IC die(s) is/are memory dies, for example flash memory dies or Random Access Memory (RAM) dies. Non-SIP MCPs commonly include memory dies of the same or different types. Among the types of memory dies that commonly are packaged together in MCPs are SDRAM dies, SRAM dies, Pseudo RAM (PSRAM) dies, and flash memory dies such as NAND flash dies and NOR flash dies. MCPs and SIPs are commonly used in consumer appliances such as cellular telephone handsets in order to make the appliances compact.
Figure 1 is a schematic plan view of the internal structure of a MCP 10 with two stacked IC dies 12 and 14. Die 12 is stacked above die 14, which is on a substrate 16. Both dies 12 and 14 include wire bonding pads 18. Bonding pads 18 of die 12 are connected by electrically conducting wire bonds 20 to bonding pads 18 of die 14. Bonding pads 18 of die 14 are connected by electrically conducting wire bonds 22 to pads (not shown) of substrate 16 that are electrically connected to the pins or balls (not shown) of MCP 10. Alternatively, some or all of the bonding pads 18 of dies 12 and 14, that are connected to each other, are connected to each other via pads of substrate 16, with those bonding pads 18 of dies 12 and 14 connected to those pads of substrate 16 by electrically conducting wire bonds. Alternatively, some of the bonding pads 18 of die 12 are electrically connected directly to the pins or balls of MCP 10. All such electrical connections of bonding pads of one die to bonding pads of another die, that are via only electrical conductors such as wire bonds 20 and/or pads of substrate 16, with no electronic components or electronic circuitry intervening, are considered herein to be "direct" electrical connections.
Vendors of MCPs and SIPs commonly purchase their IC dies from a variety of suppliers. Each supplier typically has its own convention for the layout of bonding pads 18, so that a particular bonding pad 18 of die 12 might have to be bonded to a bonding pad 18 of a die 14 from one supplier that is in a different location from the logically equivalent bonding pad 18 of an equivalent die 14 from a different supplier. The need to adapt a die 12 to two dies 14 with different layouts of their bonding pads 18 (or a die 14 to two dies 12 with different layouts of their bonding pads 14) complicates the internal structure of MCP 10 and the process of assembling MCP 10, or alternatively requires the manufacturing of different versions of the same die, with different pad locations. There is thus a widely recognized need for, and it would be highly advantageous to have, an IC die that is adapted to assembly in a MCP with a variety of other IC dies with different respective layouts of their bonding pads.
SUMMARY OF THE INVENTION According to the present invention there is provided an integrated circuit die, including a plurality of bonding pads, wherein two of the bonding pads, that share a common logical function, are separated by at least about a width of the integrated circuit die. According to the present invention there is provided a method of producing system- in-package devices, including the steps of: (a) providing two substantially identical first integrated circuit dies, each first integrated circuit die having a plurality of bonding pads, wherein two of the bonding pads share a common logical function; (b) providing a second integrated circuit die that is functionally different from the first integrated circuit dies, the second integrated circuit die having a plurality of bonding pads; (c) providing a third integrated circuit die that is functionally identical to the second integrated circuit die, the third integrated circuit die having a plurality of bonding pads, the bonding pads of the third integrated circuit die having a different geometric arrangement than the bonding pads of the second integrated circuit die; (d) producing a first system- in-package device by steps including directly electrically connecting a first of the two bonding pads, of one of the first integrated circuit dies, that share the common logical function, to one of the bonding pads of the second integrated circuit die; and (e) producing a second system-in-package device by steps including directly electrically connecting a second of the two bonding pads, of another of the first integrated circuit dies, that share the common logical function, to one of the bonding pads of the third integrated circuit die, wherein the one bonding pad of the third integrated circuit die is functionally identical to but geometrically different than the one bonding pad of the second integrated circuit die.
According to the present invention there is provided a method of producing multichip package devices, including the steps of: (a) providing a plurality of substantially identical first integrated circuit dies, each first integrated circuit die having a plurality of bonding pads, wherein two of the bonding pads share a common logical function; (b) providing a plurality of second integrated circuit dies, each second integrated circuit die having a plurality of bonding pads; (c) producing a first multichip package device by steps including: (i) mounting one of the first integrated circuit dies in a stacked relationship with one of the second integrated circuit dies, and (ii) directly electrically connecting a first of the two bonding pads of the one first integrated circuit die that share the common logical function to a first of the bonding pads of the one second integrated circuit die; and (d) producing a second multichip package device by steps including: (i) mounting another of the first integrated dies in a stacked relationship with another of the second integrated circuit dies, and (ii) directly electrically connecting a second of the two bonding pads of the other first integrated circuit die that share the common logical function to a second of the bonding pads of the other second integrated circuit die. An integrated circuit die of the present invention includes a plurality of bonding pads, with two of the bonding pads, separated by the width of the die, sharing a common logical function. That the common function is a "logical" function means that the pads are used for a function related to signal processing such as signal input or for signal output, rather than e.g. for power or ground. Note that two pads that share a common logical function can be used independently of each other. Usually, one of the two pads is used and the other is left unused. The "width" of the die is the diameter of the smallest circle that can be inscribed inside the die. In the case of a rectangular die, the "width" of the die is the length of the short sides of the rectangle. Preferably, the two pads that share a common logical function are on opposite sides of the die. It is known to have two bonding pads in the same IC die with a common logical function. For example, the electronic wristwatch described by Kawamura et al. in US Patent No. 4,093,992 includes two IC dies 558 and 559 in which both pad 34 and pad 36 are clock signal terminals. It is the conventional wisdom, however, that such bonding pads should be on the same side of their die, as in the case in Kawamura et al., to keep the electrical path between the two bonding pads as short as possible. The innovative aspect of the IC die of the present invention is that in the context of MCPs it sometimes is more convenient to put two bonding pads that share a common logical function on opposite sides of the die, despite the necessarily longer electrical path that connects the two bonding pads. Preferably, the IC die is rectangular, and the two logical pads that share a common logical function are separated by at least about the length of the short sides of the rectangle. Most preferably, the two pads that share a common logical function are separated by at least about the length of the long sides of the rectangle.
Preferably, the IC die also includes an electronic circuit that is operationally connected to the two bonding pads that share the common logical function. The purpose of the electronic circuit is to implement that common logical function. If the logical function is signal input then the electronic circuit most preferably includes an input buffer. If the logical function is signal output then the electronic circuit most preferably includes an output buffer. Preferably, the IC die also includes an electrical conductor that directly connects the two bonding pads that share the common logical function.
The scope of the present invention also includes a method of producing SIP devices. The following are provided: two substantially identical first IC dies, a second IC die and a third IC die. The second and third IC dies are functionally identical and are functionally different from the first IC dies. Each first IC die has a plurality of bonding pads, with two of the bonding pads sharing a common logical function. Both the second IC die and the third IC die have respective pluralities of bonding pads, but the bonding pads of the third IC die have a different geometric arrangement than the bonding pads of the second IC die. A first SIP device is produced by steps including directly electrically connecting one of the two bonding pads, of one of the two first IC dies, that share the common logical function, to one of the bonding pads of the second IC die. A second SIP device is produced by steps including directly electrically connecting the other of the two bonding pads, of the other first IC die, that share the common logical function, to one of the bonding pads, of the third IC die, that is functionally identical to but geometrically different from the bonding pad of the second IC die that is used equivalently in the first SIP device. That the bonding pad of the third IC die is "geometrically different" from the bonding pad of the second IC die means that the two bonding pads are at different respective locations on their respective dies.
Preferably, the first IC dies are memory dies and the second and third IC dies are processor dies. Alternatively, the first IC dies are processor dies and the second and third IC dies are memory dies.
The scope of the present invention also includes a method of producing MCP devices. Respective pluralities of first and second IC dies are provided. Each IC die has a plurality of bonding pads. In each first IC die, two of the bonding pads share a common logical function. One MCP is produced by steps including stacking one of the first IC dies above or below one of the second IC dies and directly electrically connecting one of the two bonding pads of the first IC die that share the common logical function to one of the bonding pads of the second IC die. Another MCP is produced by steps including stacking another one of the first IC dies above or below another one of the second IC dies and directly electrically connecting the other of the two bonding pads of the first IC die that share the common logical function to a different one of the bonding pads of the second IC die. The innovative concept of this aspect of the present invention is that although it is obvious to have IC dies such as those taught by Kawamura et al. stacked together with other dies in MCPs, it is not obvious to take advantage of the presence of the two functionally equivalent bonding pads of such IC dies to produce two different kinds of MCPs with different functionalities.
BRIEF DESCRIPTION OF THE DRAWINGS The invention is herein described, by way of example only, with reference to the accompanying drawings, wherein:
FIG. 1 is a schematic plan view of the internal structure of a typical prior art MCP; FIGs. 2 A and 2B are schematic plan views of two SIPs of the present invention; FIG. 3 is a partial schematic diagram of the internal structure of an IC die of the present invention in which the two functionally equivalent bonding pads are used for signal output;
FIG. 4 is a partial schematic diagram of the internal structure of an IC die of the present invention in which the two functionally equivalent bonding pads are used for signal input; FIGs. 5 A and 5B are schematic plan views of two MCPs of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present invention is of an IC die which can be packaged conveniently with other IC dies from a variety of suppliers in a MCP. Specifically, the present invention can be used to make SIPs using IC dies, particularly memory dies, obtained from a variety of suppliers.
The principles and operation of an IC die and its use in an MCP according to the present invention may be better understood with reference to the drawings and the accompanying description. Returning now to the drawings, Figures 2 A and 2B are schematic plan views of two SIPs 30 and 50 of the present invention. SIPs 30 and 50 include identical flash memory dies 32, with bonding pads 34A-34H. SIPs 30 and 50 are produced by a manufacturer of flash memory dies 32 who obtains processor dies from various suppliers and packages those processor dies together with the manufacturer's own flash memory dies 32 in SIPs such as SIPs 30 and 50. In SIP 30, memory die 32 is stacked above, and bonded to, a processor die 36, obtained from a first supplier, with bonding pads 38A-38G. In SIP 50, memory die 32 is stacked above, and bonded to, a processor die 56, obtained from a second supplier, with bonding pads 58A-58G. In both cases, the bonding is effected using wire bonds 40. Processor dies 36 and 56, in turn, are bonded to respective substrates 42 using wire bonds 44. Bonding pads 58A-58G have the same logical functionality as bonding pads 38A-38G, but are laid out differently on processor die 56 than on processor die 36. Specifically, although bonding pads 38A-38F and bonding pads 58A-58F have equivalent locations on their respective dies, bonding pads 38G and 58G are on opposite sides of their respective dies. Therefore, bonding pads 34G and 34H, on opposite sides of memory die 32, are given identical logical functions. In SIP 30, bonding pad 34G is bonded to bonding pad 38G. In SIP 50, bonding pad 34H is bonded to bonding pad 58G. The producer of SIPs 30 and 50 is free to obtain processor dies 36 and 56 from two different suppliers.
Figure 3 is a partial schematic diagram of the internal structure of flash memory die 32 in the case that the logical function of bonding pads 34G and 34H is signal output. Bonding pads 34G and 34H are connected, via respective amplifiers 62 and 64 and a common electrical conductor 66, to an output buffer 68 that drives both bonding pads 34G and 34H. Because only one of bonding pads 34G and 34H is used in any specific SIP that includes die 32, the other bonding pad necessarily is dangling. This causes an additional parasitic capacitance, and the internal timing of die 32 is designed accordingly.
Figure 4 is a partial schematic diagram of the internal structure of flash memory die 32 in the case that the logical function of bonding pads 34G and 34H is signal input. Bonding pads 34G and 34H are connected via respective amplifiers 72 and 74 and a common electrical conductor 76 to an input buffer 78. In addition, a second electrical conductor 70 shorts bonding pads 34G and 34H so that neither bonding pad is dangling. Without electrical conductor 70, the unused bonding pad 34G or 34H might drive the input driver to the wrong level, thereby creating an electrical contention. Having two bonding r pads 34G and 34H increases the parasitic capacitance on the input buffers. The internal timing of die 32 is designed accordingly.
Figures 5 A and 5B are schematic plan views of two MCPs 80 and 80' of the present invention. MCPs 80 and 80' include identical flash memory dies 32 stacked above and bonded to identical memory dies 82 that could be flash dies but could alternatively be other kinds of memory dies. Each memory die 82 has bonding pads 84 A-H. Bonding pads 84G and 84H have similar but not identical functionalities. In both MCPs 80 and 80', bonding pads 34A-34F are bonded to bonding pads 84A-84F using wire bonds 86 and bonding pads 84A-84F are bonded to a substrate 90 using wire bonds 88. In MCP 80, a wire bond 86 is used to bond bonding pad 34G to bonding pad 84G, a wire bond 88 is used to bond bonding pad 84G to substrate 90, and bonding pads 34H and 84H are not used. In MCP 80', a wire bond 86 is used to bond bonding pad 34H to bonding pad 84H, a wire bond 88 is used to bond bonding pad 84H to substrate 90, and bonding pads 34G and 84G are not used. In this way, two different MCPs 80 and 80' with slightly different functionalities are provided using identical components 32 and 82. While the invention has been described with respect to a limited number of embodiments, it will be appreciated that many variations, modifications and other applications of the invention may be made.

Claims

WHAT IS CLAIMED IS:
1. An integrated circuit die, comprising a plurality of bonding pads, wherein two of said bonding pads, that share a common logical function, are separated by at least about a width of the integrated circuit die.
2. The integrated circuit die of claim 1 , wherein said two bonding pads that share said common logical function are on opposite sides of the integrated circuit die.
3. The integrated circuit die of claim 1, wherein the integrated circuit die is substantially rectangular, with two long sides and two short sides, and wherein said two bonding pads that share said common logical function are separated by at least about a length of said short sides.
4. The integrated circuit die of claim 3, wherein said two bonding pads that share said common logical function are separated by at least about a length of said long sides.
5. The integrated circuit die of claim 1, further comprising an electronic circuit, that is operationally connected to said two bonding pads that share said common logical function, for implementing said logical function.
6. The integrated circuit die of claim 5, wherein said logical function is signal input, and wherein said electronic circuit includes an input buffer.
7. The integrated circuit die of claim 5, wherein said logical function is signal output, and wherein said electronic circuit includes an output buffer.
8. The integrated circuit die of claim 1, further comprising an electrical conductor directly connecting said two bonding pads that share said common logical function.
9. A method of producing system-in-package devices, comprising the steps of:
(a) providing two substantially identical first integrated circuit dies, each said first integrated circuit die having a plurality of bonding pads, wherein two of said bonding pads share a common logical function;
(b) providing a second integrated circuit die that is functionally different from said first integrated circuit dies, said second integrated circuit die having a plurality of bonding pads;
(c) providing a third integrated circuit die that is functionally identical to said second integrated circuit die, said third integrated circuit die having a plurality of bonding pads, said bonding pads of said third integrated circuit die having a different geometric arrangement than said bonding pads of said second integrated circuit die;
(d) producing a first system-in-package device by steps including directly electrically connecting a first of said two bonding pads, of one of said first integrated circuit dies, that share said common logical function, to one of said bonding pads of said second integrated circuit die; and
(e) producing a second system-in-package device by steps including directly electrically connecting a second of said two bonding pads, of another of said first integrated circuit dies, that share said common logical function, to one of said bonding pads of said third integrated circuit die, wherein said one bonding pad of said third integrated circuit die is functionally identical to but geometrically different than said one bonding pad of said second integrated circuit die.
10. The method of claim 9, wherein said first integrated circuit dies are memory dies and said second and third integrated circuit dies are processor dies.
11. The method of claim 9, wherein said first integrated circuit dies are processor dies and said second and third integrated circuit dies are memory dies.
12. A method of producing multichip package devices, comprising the steps of:
(a) providing a plurality of substantially identical first integrated circuit dies, each said first integrated circuit die having a plurality of bonding pads, wherein two of said bonding pads share a common logical function;
(b) providing a plurality of second integrated circuit dies, each said second integrated circuit die having a plurality of bonding pads;
(c) producing a first multichip package device by steps including:
(i) mounting one of said first integrated circuit dies in a stacked relationship with one of said second integrated circuit dies, and
(ii) directly electrically connecting a first of said two bonding pads of said one first integrated circuit die that share said common logical function to a first of said bonding pads of said one second integrated circuit die; and (d) producing a second multichip package device by steps including:
(i) mounting another of said first integrated dies in a stacked relationship with another of said second integrated circuit dies, and (ii) directly electrically connecting a second of said two bonding pads of said other first integrated circuit die that share said common logical function to a second of said bonding pads of said other second integrated circuit die.
PCT/IL2005/001168 2004-11-10 2005-11-08 Integrated circuit die with logically equivalent bonding pads WO2006051527A2 (en)

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100419000B1 (en) * 2001-12-28 2004-02-18 참제약 주식회사 Implements of cupping glass with low frequency and magnetic pole
US8212367B2 (en) * 2004-11-10 2012-07-03 Sandisk Il Ltd. Integrated circuit die with logically equivalent bonding pads
US7580687B2 (en) * 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US7509594B2 (en) * 2005-07-06 2009-03-24 Sandisk Il Ltd. Method of selling integrated circuit dies for multi-chip packages
US7569923B2 (en) * 2006-01-11 2009-08-04 Sandisk Il. Ltd. Recyclying faulty multi-die packages
US7535110B2 (en) 2006-06-15 2009-05-19 Marvell World Trade Ltd. Stack die packages
US10529645B2 (en) * 2017-06-08 2020-01-07 Xilinx, Inc. Methods and apparatus for thermal interface material (TIM) bond line thickness (BLT) reduction and TIM adhesion enhancement for efficient thermal management
US11493713B1 (en) 2018-09-19 2022-11-08 Psiquantum, Corp. Photonic quantum computer assembly having dies with specific contact configuration and matched CTE
US10861808B2 (en) 2018-11-21 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding structure of dies with dangling bonds

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631492A (en) * 1994-01-21 1997-05-20 Motorola Standard cell having a capacitor and a power supply capacitor for reducing noise and method of formation
US6114878A (en) * 1998-02-13 2000-09-05 Micron Technology, Inc. Circuit for contact pad isolation

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5257856A (en) 1975-11-07 1977-05-12 Seiko Epson Corp Electronic wristwatch
DE3578224D1 (en) * 1984-07-27 1990-07-19 Fujitsu Ltd INTEGRATED CHIP-TO-CHIP TYPE.
JPH0815167B2 (en) * 1986-03-26 1996-02-14 株式会社日立製作所 Semiconductor device
JP3120022B2 (en) * 1995-06-29 2000-12-25 シャープ株式会社 Pen input device
US5969538A (en) * 1996-10-31 1999-10-19 Texas Instruments Incorporated Semiconductor wafer with interconnect between dies for testing and a process of testing
US5744870A (en) * 1996-06-07 1998-04-28 Micron Technology, Inc. Memory device with multiple input/output connections
US5874931A (en) * 1996-06-28 1999-02-23 Microchip Technology Incorporated Microcontroller with dual port ram for LCD display and sharing of slave ports
US6509632B1 (en) * 1998-01-30 2003-01-21 Micron Technology, Inc. Method of fabricating a redundant pinout configuration for signal enhancement in an IC package
JP2000223653A (en) * 1999-02-02 2000-08-11 Rohm Co Ltd Semiconductor device having chip-on-chip structure and semiconductor chip using the same
US6833620B1 (en) * 2000-11-28 2004-12-21 Ati Technologies, Inc. Apparatus having reduced input output area and method thereof
US6417695B1 (en) 2001-03-15 2002-07-09 Micron Technology, Inc. Antifuse reroute of dies
JP4221238B2 (en) * 2002-09-26 2009-02-12 エルピーダメモリ株式会社 Memory module
JP4615189B2 (en) 2003-01-29 2011-01-19 シャープ株式会社 Semiconductor device and interposer chip
US7700409B2 (en) * 2004-05-24 2010-04-20 Honeywell International Inc. Method and system for stacking integrated circuits
US20060087013A1 (en) 2004-10-21 2006-04-27 Etron Technology, Inc. Stacked multiple integrated circuit die package assembly
US8212367B2 (en) 2004-11-10 2012-07-03 Sandisk Il Ltd. Integrated circuit die with logically equivalent bonding pads

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631492A (en) * 1994-01-21 1997-05-20 Motorola Standard cell having a capacitor and a power supply capacitor for reducing noise and method of formation
US6114878A (en) * 1998-02-13 2000-09-05 Micron Technology, Inc. Circuit for contact pad isolation

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