WO2006052433A3 - Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios - Google Patents

Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios Download PDF

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Publication number
WO2006052433A3
WO2006052433A3 PCT/US2005/038279 US2005038279W WO2006052433A3 WO 2006052433 A3 WO2006052433 A3 WO 2006052433A3 US 2005038279 W US2005038279 W US 2005038279W WO 2006052433 A3 WO2006052433 A3 WO 2006052433A3
Authority
WO
WIPO (PCT)
Prior art keywords
polishing composition
silicon oxide
silicon nitride
removal rate
oxide removal
Prior art date
Application number
PCT/US2005/038279
Other languages
French (fr)
Other versions
WO2006052433A2 (en
Inventor
Phillip Carter
Timothy Johns
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Priority to KR1020077012608A priority Critical patent/KR101117401B1/en
Priority to JP2007540341A priority patent/JP5102040B2/en
Priority to CN2005800408876A priority patent/CN101065458B/en
Priority to EP05815470.9A priority patent/EP1831321B1/en
Publication of WO2006052433A2 publication Critical patent/WO2006052433A2/en
Publication of WO2006052433A3 publication Critical patent/WO2006052433A3/en
Priority to IL182797A priority patent/IL182797A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
PCT/US2005/038279 2004-11-05 2005-10-21 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios WO2006052433A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020077012608A KR101117401B1 (en) 2004-11-05 2005-10-21 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP2007540341A JP5102040B2 (en) 2004-11-05 2005-10-21 Polishing composition and method having higher removal rate of silicon nitride than silicon oxide
CN2005800408876A CN101065458B (en) 2004-11-05 2005-10-21 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
EP05815470.9A EP1831321B1 (en) 2004-11-05 2005-10-21 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
IL182797A IL182797A (en) 2004-11-05 2007-04-26 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/982,486 2004-11-05
US10/982,486 US7504044B2 (en) 2004-11-05 2004-11-05 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Publications (2)

Publication Number Publication Date
WO2006052433A2 WO2006052433A2 (en) 2006-05-18
WO2006052433A3 true WO2006052433A3 (en) 2006-08-31

Family

ID=35840203

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/038279 WO2006052433A2 (en) 2004-11-05 2005-10-21 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Country Status (10)

Country Link
US (2) US7504044B2 (en)
EP (1) EP1831321B1 (en)
JP (1) JP5102040B2 (en)
KR (1) KR101117401B1 (en)
CN (1) CN101065458B (en)
IL (1) IL182797A (en)
MY (2) MY160422A (en)
SG (1) SG157354A1 (en)
TW (1) TWI323274B (en)
WO (1) WO2006052433A2 (en)

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