WO2006071475A3 - Wafer planarization composition and method of use - Google Patents

Wafer planarization composition and method of use Download PDF

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Publication number
WO2006071475A3
WO2006071475A3 PCT/US2005/044135 US2005044135W WO2006071475A3 WO 2006071475 A3 WO2006071475 A3 WO 2006071475A3 US 2005044135 W US2005044135 W US 2005044135W WO 2006071475 A3 WO2006071475 A3 WO 2006071475A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
planarization composition
wafer planarization
polishing solution
selectivity
Prior art date
Application number
PCT/US2005/044135
Other languages
French (fr)
Other versions
WO2006071475A2 (en
Inventor
Christopher J Rueb
Richard J Webb
Bhaskar V Velamakanni
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of WO2006071475A2 publication Critical patent/WO2006071475A2/en
Publication of WO2006071475A3 publication Critical patent/WO2006071475A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Abstract

A wafer polishing solution and method for polishing a wafer comprising an amino acid and calcium ions or barium ions. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.
PCT/US2005/044135 2004-12-23 2005-12-07 Wafer planarization composition and method of use WO2006071475A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/020,287 US6997785B1 (en) 2004-12-23 2004-12-23 Wafer planarization composition and method of use
US11/020,287 2004-12-23

Publications (2)

Publication Number Publication Date
WO2006071475A2 WO2006071475A2 (en) 2006-07-06
WO2006071475A3 true WO2006071475A3 (en) 2006-08-31

Family

ID=35767836

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/044135 WO2006071475A2 (en) 2004-12-23 2005-12-07 Wafer planarization composition and method of use

Country Status (4)

Country Link
US (2) US6997785B1 (en)
MY (1) MY136721A (en)
TW (1) TW200628598A (en)
WO (1) WO2006071475A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
US20080125018A1 (en) * 2006-11-27 2008-05-29 United Microelectronics Corp. Solution for fixed abrasive chemical mechanical polishing process and fixed abrasive chemical mechanical polishing method
US8591764B2 (en) * 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
JP2011502362A (en) * 2007-10-31 2011-01-20 スリーエム イノベイティブ プロパティズ カンパニー Composition, method and process for polishing a wafer
CN112151672B (en) * 2019-06-28 2023-07-25 北京时代全芯存储技术股份有限公司 Method for manufacturing laminated body
WO2023178003A1 (en) * 2022-03-14 2023-09-21 Versum Materials Us, Llc Stable chemical mechanical planarization polishing compositions and methods for high rate silicon oxide removal

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1106663A1 (en) * 1999-12-08 2001-06-13 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US20010006224A1 (en) * 1999-12-28 2001-07-05 Yasuaki Tsuchiya Slurry for chemical mechanical polishing
WO2004062853A1 (en) * 2003-01-10 2004-07-29 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing

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US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5769689A (en) 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
US6336945B1 (en) 1996-11-14 2002-01-08 Kao Corporation Abrasive composition for the base of magnetic recording medium and process for producing the base by using the same
US5735963A (en) 1996-12-17 1998-04-07 Lucent Technologies Inc. Method of polishing
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6099604A (en) 1997-08-21 2000-08-08 Micron Technology, Inc. Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
US6019806A (en) 1998-01-08 2000-02-01 Sees; Jennifer A. High selectivity slurry for shallow trench isolation processing
US6184139B1 (en) 1998-09-17 2001-02-06 Speedfam-Ipec Corporation Oscillating orbital polisher and method
KR100615691B1 (en) 1998-12-18 2006-08-25 도소 가부시키가이샤 A member for polishing, surface plate for polishing and polishing method using the same
TW486514B (en) * 1999-06-16 2002-05-11 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
JP2001085076A (en) * 1999-09-10 2001-03-30 Fuji Photo Film Co Ltd Photoelectric transducer and photocell
JP3490038B2 (en) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 Metal wiring formation method
US6454820B2 (en) 2000-02-03 2002-09-24 Kao Corporation Polishing composition
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6612916B2 (en) 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6579923B2 (en) * 2001-02-05 2003-06-17 3M Innovative Properties Company Use of a silicone surfactant in polishing compositions
US6726534B1 (en) 2001-03-01 2004-04-27 Cabot Microelectronics Corporation Preequilibrium polishing method and system
US20030017785A1 (en) 2001-03-02 2003-01-23 Kazumasa Ueda Metal polish composition and polishing method
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6620215B2 (en) * 2001-12-21 2003-09-16 Dynea Canada, Ltd. Abrasive composition containing organic particles for chemical mechanical planarization
US6841480B2 (en) 2002-02-04 2005-01-11 Infineon Technologies Ag Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US7087529B2 (en) * 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1106663A1 (en) * 1999-12-08 2001-06-13 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US20010006224A1 (en) * 1999-12-28 2001-07-05 Yasuaki Tsuchiya Slurry for chemical mechanical polishing
WO2004062853A1 (en) * 2003-01-10 2004-07-29 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing

Also Published As

Publication number Publication date
US6997785B1 (en) 2006-02-14
MY136721A (en) 2008-11-28
US7198560B2 (en) 2007-04-03
US20060141913A1 (en) 2006-06-29
WO2006071475A2 (en) 2006-07-06
TW200628598A (en) 2006-08-16

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