WO2006072107A2 - Semiconductor device with embedded heat spreader - Google Patents

Semiconductor device with embedded heat spreader Download PDF

Info

Publication number
WO2006072107A2
WO2006072107A2 PCT/US2005/047689 US2005047689W WO2006072107A2 WO 2006072107 A2 WO2006072107 A2 WO 2006072107A2 US 2005047689 W US2005047689 W US 2005047689W WO 2006072107 A2 WO2006072107 A2 WO 2006072107A2
Authority
WO
WIPO (PCT)
Prior art keywords
die
thermally conductive
conductive substrate
tape lead
attached
Prior art date
Application number
PCT/US2005/047689
Other languages
French (fr)
Other versions
WO2006072107A3 (en
Inventor
Pete Vogt
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporation filed Critical Intel Corporation
Priority to JP2007549698A priority Critical patent/JP2008527697A/en
Priority to DE112005003273T priority patent/DE112005003273T5/en
Publication of WO2006072107A2 publication Critical patent/WO2006072107A2/en
Publication of WO2006072107A3 publication Critical patent/WO2006072107A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4839—Assembly of a flat lead with an insulating support, e.g. for TAB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06579—TAB carriers; beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1094—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • Substrates and packages affect semiconductor performance in many ways. Integrated circuits are often packaged and typically reside in or on a substrate. Electrical, thermal and mechanical considerations are relevant to substrate and package design. For example, substrates and packages remove heat from a integrated circuit while also providing power and signaling.
  • Stacked configurations generally have heightened requirements for providing power and signaling to a semiconductor as well as for dissipating heat.
  • Fig. 1 is an exploded view of the assembly layers using the copper substrate.
  • Fig. 2 is an example of the single die assembly using the copper substrate.
  • Fig. 3 is an example of the multiple die assembly using the copper substrate.
  • a copper routing layer can then be bonded to the other side of the polyimide to complete an interconnect substrate.
  • the interconnect substrate can provide a routing layer to distribute signals to a semiconductor die and the interconnect is insulated from a thermally conductive substrate by the polyimide layer.
  • An embodiment may improve the thermal capability of a semiconductor device and interconnect electrical performance.
  • Figures 1-3 show DRAM and DRAM stacked package embodiments to illustrate a substrate and package as explained herein. DRAMs are used here for illustration purposes, but embodiments of the invention are not restricted for use with any specific semiconductor devices or circuits. These embodiments may introduce a thermal conductor into a device stack to conduct heat from a buried DRAM die to the edge of the stacked package.
  • signal interconnect solder bumps or other interconnections can transport heat to a surface of the DRAM stack and to a system substrate where heat can be dissipated.
  • a copper substrate may also connect to ground and act as a ground reference for high-speed signals. In the present embodiment, this ground reference improves signal integrity of the DRAM signals.
  • FIG. 1 is an exploded view of the assembly layers of a semiconductor package 100 that uses a thermal conducting substrate 110.
  • the thermal conducting substrate 110 comprises copper although any substrate material may be used so long as it has an sufficiently high thermal conductivity.
  • the thermal conducting substrate is a laminate of materials with one or any combination of the materials having a sufficiently high thermal conductivity to allow the substrate to operate as a thermally conductive substrate to spread heat from a semiconductor die.
  • the exploded view includes a backing film substrate 115 such as a polyimide tape to bond to the thermal conducting substrate 110.
  • a routing layer such as tape lead 120 is adjacent to the backing film substrate 115 and on the opposite side of the backing film substrate 115 from the thermal conducting substrate 110.
  • the routing layer is copper, yet any conductive material may be used.
  • the present embodiment has an elastomer layer 125 sandwiched between a tape lead 120 and a semiconductor die 130. The elastomer layer 125 absorbs stress from thermal expansion. The elastomer layer 125 may have openings where the tape lead 120 can connect with the semiconductor die 130.
  • Elastomers are typically polymeric material that may experience large and reversible elastic deformations and are used to absorb stress between layers that may have different coefficients of thermal expansion. Additionally, the present embodiment uses a DRAM die as the semiconductor die 130. Any semiconductor may be used in semiconductor die 130 and be in accordance with the principles of this disclosure. In an embodiment a molded compound 105 may be attached to the conducting substrate 110 as shown in FIG. 1.
  • FIG. 2 illustrates a single die assembly 200 consisting of the assembly layers from FIG. 1 resulting in a semiconductor package that uses a thermal conducting substrate 210.
  • the thermal conducting substrate 210 comprises copper although any substrate material may be used so long as it has a sufficiently high thermal conductivity.
  • the thermal conducting substrate is a laminate of materials with one or any combination of the materials having a sufficiently high thermal conductivity to allow the substrate to operate as a thermally conductive substrate to spread heat from a semiconductor die.
  • a thermal conducting 210 substrate may also connect to ground and act as a ground reference for high-speed signals. In the present embodiment, this ground reference improves signal integrity of the DRAM signals.
  • the assembly 200 includes a backing film substrate 215 such as a polyimide tape that is bonded to the thermal conducting substrate 210.
  • a backing film substrate 215 such as a polyimide tape that is bonded to the thermal conducting substrate 210.
  • a routing layer such as tape lead 220 is connected to the backing film substrate 215 and on the opposite side of the backing film substrate 215 from the thermal conducting substrate 210.
  • the routing layer is copper, yet any conductive material may be used.
  • the present embodiment also includes solder balls 240 attached to the tape lead 220 at the edge of the assembly 200 and structurally supported by the thermal conducting substrate 210 and the backing film substrate 215.
  • the solder balls 240 may be any other material suitable for electrical interconnection.
  • the present embodiment has an elastomer layer 225 sandwiched between a tape lead 220 and a semiconductor die 230.
  • the elastomer layer 225 absorbs stress from thermal expansion.
  • the elastomer layer 225 has openings where the tape lead 220 is connected to the semiconductor die 230.
  • the present embodiment uses a DRAM die as the semiconductor die 230. Any semiconductor may be used in semiconductor die 230 and be in accordance with the principles of this disclosure.
  • a mold compound 205 may be attached to the conducting substrate 210 as shown in FIG. 2.
  • FIG. 3 shows an embodiment multiple die assembly 300 using thermal conducting substrates placed between semiconductor dies such as semiconductor die 130 from FIG. 1.
  • the thermal conducting substrates are each a laminate of materials with one or any combination of the materials having a sufficiently high thermal conductivity to allow the substrate to operate as a thermally conductive substrate to spread heat from a semiconductor die.
  • the multiple die assembly 300 may consist of multiple assemblies 200 from FIG. 2.
  • the embodiment multiple die assembly 300 in FIG. 3 is a stacked configuration including multiple thermally conducting substrates.
  • the thermal conducting substrates 310 comprise copper although any substrate material may be used so long as it has an sufficiently high thermal conductivity.
  • a thermal conducting 310 substrate may also connect to ground and act as a ground reference for high-speed signals. Again, this ground reference improves signal integrity to and from any of the semiconductor dies 330.
  • the multiple die assembly 300 in FIG. 3 includes an elastomer layer 325 in between semiconductor dies and adjacent thermal conductive substrates.
  • the embodiment multiple die assembly 300 also includes connecting balls such as solder balls 340 connecting adjacent assemblies in the multiple die assembly 300. Solder balls 340 are used in the present embodiment but the connecting balls may be any other material suitable for electrical interconnection.
  • the thermally conductive substrate and semiconductor die assembly may be manufactured by the following method.
  • a polymer resin may be adhered to a thermally conductive substrate.
  • the thermally conductive substrate may be a copper heat spreader, but any suitably heat conductive substrate material may be used.
  • An example polymer resin is a polyimide tape, but embodiments are not limited to use of polyimide tape for the polymer resin.
  • the method may include attaching a tape lead to the polymer resin.
  • An example tape lead may comprise copper as described in the above apparatus and system, but any material may be used if it can be configured into a routing layer to transport electrical signals.
  • the embodiment method also includes attaching an elastomer to the tape lead. In an embodiment the elastomer has an opening to expose a portion of the tape lead.
  • the present embodiment includes attaching the elastomer to a die, wherein the die can be any semiconductor die, for example a DRAM die.
  • the method includes attaching the die to the tape lead such as the example embodiment's copper tape lead described above.
  • An embodiment method may further comprise attaching at least one solder ball to the tape lead.
  • Embodiment methods may include the above method and further comprise forming a second elastomer layer to the exposed side of the die. Additionally, the present embodiment may further comprise attaching the second elastomer layer to an adjacent heat spreader. In an embodiment these methods may be repeated, thus creating a stacked assembly with multiple heat spreaders.

Abstract

In some embodiments an apparatus may comprise a semiconductor die, an elastomer layer attached to the die, a tape lead attached to the elastomer, a portion of the tape lead exposed through the elastomer to connect with the die, a polymer resin attached to the tape lead, and a thermally conductive substrate attached to the polymer resin such that the thermally conductive substrate can spread heat from the semiconductor die.

Description

EMBEDDED HEAT SPREADER
BACKGROUND
Semiconductor technology has sustained significant improvements over the last few decades. The concurrent increase in complexity and shrinking scale of semiconductors has generated its own law, Moore's Law, relating the exponential growth in the number of transistors per integrated circuit. These gains necessitated a similar growth in many related industries such as the semiconductor packaging industry. Semiconductors generate heat while operating. If the heat is not dissipated, it may damage a semiconductor or cause it to malfunction. As transistor density in semiconductor packages increases, heat dissipation becomes an issue.
Substrates and packages affect semiconductor performance in many ways. Integrated circuits are often packaged and typically reside in or on a substrate. Electrical, thermal and mechanical considerations are relevant to substrate and package design. For example, substrates and packages remove heat from a integrated circuit while also providing power and signaling.
Semiconductors may be packaged in a stacked configuration. Stacked configurations generally have heightened requirements for providing power and signaling to a semiconductor as well as for dissipating heat.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is an exploded view of the assembly layers using the copper substrate. Fig. 2 is an example of the single die assembly using the copper substrate. Fig. 3 is an example of the multiple die assembly using the copper substrate. DETAILED DESCRIPTION
In the following description, numerous specific details are set forth. However, it is understood that embodiments of the inventions may be practiced without these specific details. In other instances, well-known circuits, structures, and techniques have not been shown in detail in order to not obscure the understanding of this description.
Reference in the specification to "one embodiment" or "an embodiment", etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one aspect of the invention. The appearances of the phrase "in one embodiment" in various places in the specification do not necessarily all refer to the same embodiment. The following describes at least an improvement for thermal performance of a semiconductor device and for multiple devices in a multi-die stacked package. Generally, a typical substrate material used in semiconductor packages may be replaced with a laminate of materials that improves the conduction of heat out of a semiconductor die. For example, a copper base-substrate with a single layer polyimide layer bonded to the substrate can conduct heat off of the die. In this example, a copper routing layer can then be bonded to the other side of the polyimide to complete an interconnect substrate. The interconnect substrate can provide a routing layer to distribute signals to a semiconductor die and the interconnect is insulated from a thermally conductive substrate by the polyimide layer. An embodiment may improve the thermal capability of a semiconductor device and interconnect electrical performance. Figures 1-3 show DRAM and DRAM stacked package embodiments to illustrate a substrate and package as explained herein. DRAMs are used here for illustration purposes, but embodiments of the invention are not restricted for use with any specific semiconductor devices or circuits. These embodiments may introduce a thermal conductor into a device stack to conduct heat from a buried DRAM die to the edge of the stacked package. At the package edge, signal interconnect solder bumps or other interconnections can transport heat to a surface of the DRAM stack and to a system substrate where heat can be dissipated. A copper substrate may also connect to ground and act as a ground reference for high-speed signals. In the present embodiment, this ground reference improves signal integrity of the DRAM signals.
FIG. 1 is an exploded view of the assembly layers of a semiconductor package 100 that uses a thermal conducting substrate 110. In the present embodiment the thermal conducting substrate 110 comprises copper although any substrate material may be used so long as it has an sufficiently high thermal conductivity. In an embodiment the thermal conducting substrate is a laminate of materials with one or any combination of the materials having a sufficiently high thermal conductivity to allow the substrate to operate as a thermally conductive substrate to spread heat from a semiconductor die.
Referring to FIG. 1, the exploded view includes a backing film substrate 115 such as a polyimide tape to bond to the thermal conducting substrate 110. This is just an example, however, any other materials suitable for a backing film substrate may be used. A routing layer such as tape lead 120 is adjacent to the backing film substrate 115 and on the opposite side of the backing film substrate 115 from the thermal conducting substrate 110. In an embodiment the routing layer is copper, yet any conductive material may be used. The present embodiment has an elastomer layer 125 sandwiched between a tape lead 120 and a semiconductor die 130. The elastomer layer 125 absorbs stress from thermal expansion. The elastomer layer 125 may have openings where the tape lead 120 can connect with the semiconductor die 130. Elastomers are typically polymeric material that may experience large and reversible elastic deformations and are used to absorb stress between layers that may have different coefficients of thermal expansion. Additionally, the present embodiment uses a DRAM die as the semiconductor die 130. Any semiconductor may be used in semiconductor die 130 and be in accordance with the principles of this disclosure. In an embodiment a molded compound 105 may be attached to the conducting substrate 110 as shown in FIG. 1.
FIG. 2 illustrates a single die assembly 200 consisting of the assembly layers from FIG. 1 resulting in a semiconductor package that uses a thermal conducting substrate 210. In the present embodiment the thermal conducting substrate 210 comprises copper although any substrate material may be used so long as it has a sufficiently high thermal conductivity. In an embodiment the thermal conducting substrate is a laminate of materials with one or any combination of the materials having a sufficiently high thermal conductivity to allow the substrate to operate as a thermally conductive substrate to spread heat from a semiconductor die. A thermal conducting 210 substrate may also connect to ground and act as a ground reference for high-speed signals. In the present embodiment, this ground reference improves signal integrity of the DRAM signals.
Referring to FIG. 2, the assembly 200 includes a backing film substrate 215 such as a polyimide tape that is bonded to the thermal conducting substrate 210. However, any other materials suitable for a backing film substrate may be used. A routing layer such as tape lead 220 is connected to the backing film substrate 215 and on the opposite side of the backing film substrate 215 from the thermal conducting substrate 210. In an embodiment the routing layer is copper, yet any conductive material may be used. The present embodiment also includes solder balls 240 attached to the tape lead 220 at the edge of the assembly 200 and structurally supported by the thermal conducting substrate 210 and the backing film substrate 215. The solder balls 240 may be any other material suitable for electrical interconnection.
The present embodiment has an elastomer layer 225 sandwiched between a tape lead 220 and a semiconductor die 230. The elastomer layer 225 absorbs stress from thermal expansion. In the present embodiment the elastomer layer 225 has openings where the tape lead 220 is connected to the semiconductor die 230. Additionally, the present embodiment uses a DRAM die as the semiconductor die 230. Any semiconductor may be used in semiconductor die 230 and be in accordance with the principles of this disclosure. In an embodiment a mold compound 205 may be attached to the conducting substrate 210 as shown in FIG. 2.
FIG. 3 shows an embodiment multiple die assembly 300 using thermal conducting substrates placed between semiconductor dies such as semiconductor die 130 from FIG. 1. In an embodiment the thermal conducting substrates are each a laminate of materials with one or any combination of the materials having a sufficiently high thermal conductivity to allow the substrate to operate as a thermally conductive substrate to spread heat from a semiconductor die. The multiple die assembly 300 may consist of multiple assemblies 200 from FIG. 2. The embodiment multiple die assembly 300 in FIG. 3 is a stacked configuration including multiple thermally conducting substrates. In the present embodiment the thermal conducting substrates 310 comprise copper although any substrate material may be used so long as it has an sufficiently high thermal conductivity. A thermal conducting 310 substrate may also connect to ground and act as a ground reference for high-speed signals. Again, this ground reference improves signal integrity to and from any of the semiconductor dies 330.
The multiple die assembly 300 in FIG. 3 includes an elastomer layer 325 in between semiconductor dies and adjacent thermal conductive substrates. The embodiment multiple die assembly 300 also includes connecting balls such as solder balls 340 connecting adjacent assemblies in the multiple die assembly 300. Solder balls 340 are used in the present embodiment but the connecting balls may be any other material suitable for electrical interconnection.
Referring to FIG. 2, the thermally conductive substrate and semiconductor die assembly may be manufactured by the following method. A polymer resin may be adhered to a thermally conductive substrate. In the present embodiment the thermally conductive substrate may be a copper heat spreader, but any suitably heat conductive substrate material may be used. An example polymer resin is a polyimide tape, but embodiments are not limited to use of polyimide tape for the polymer resin.
The method may include attaching a tape lead to the polymer resin. An example tape lead may comprise copper as described in the above apparatus and system, but any material may be used if it can be configured into a routing layer to transport electrical signals. The embodiment method also includes attaching an elastomer to the tape lead. In an embodiment the elastomer has an opening to expose a portion of the tape lead. The present embodiment includes attaching the elastomer to a die, wherein the die can be any semiconductor die, for example a DRAM die. The method includes attaching the die to the tape lead such as the example embodiment's copper tape lead described above. An embodiment method may further comprise attaching at least one solder ball to the tape lead.
Embodiment methods may include the above method and further comprise forming a second elastomer layer to the exposed side of the die. Additionally, the present embodiment may further comprise attaching the second elastomer layer to an adjacent heat spreader. In an embodiment these methods may be repeated, thus creating a stacked assembly with multiple heat spreaders.
The present invention may be embodied in other specific forms without departing from its spirit or essential characteristics. The described embodiments are to be considered in all respects only as illustrative instead of restrictive or limiting. Therefore, the scope of the invention is indicated by the appended claims rather than by the foregoing description. All changes, modifications, and alterations that come within the meaning, spirit, and range of equivalency of the claims are to be embraced as being within the scope of the appended claims.

Claims

1. An apparatus comprising: an elastomer layer; a tape lead attached to the elastomer layer; a polymer resin attached to the tape lead; and a thermally conductive substrate attached to the polymer resin, the thermally conductive substrate to spread heat.
2. The apparatus of claim 1 further comprising a die attached to the elastomer layer, the die to connect with a portion of the tape lead exposed through the elastomer, the thermally conductive substrate to spread heat from the die.
3. The apparatus of claim 2 wherein the die is a DRAM.
4. The apparatus of claim 1 wherein the polymer resin is a polyimide tape.
5. The apparatus of claim 1 wherein the thermally conductive substrate is a copper substrate.
6. The apparatus of claim 2 wherein the thermally conductive substrate further comprises an electrical ground reference for the die.
7. The apparatus of claim 1 wherein the thermally conductive substrate is a laminate of multiple materials.
8. The apparatus of claim 1 further comprising, at least one solder ball interconnect attached to the thermally conductive substrate.
9. A system comprising: a first apparatus; and a second apparatus arranged in a stack apparatus with the first apparatus, each apparatus comprising:
an elastomer layer; a tape lead attached to the elastomer layer; a polymer resin attached to the tape lead; a thermally conductive substrate attached to the polymer resin, the thermally conductive substrate to spread heat; and at least one solder ball interconnect attached to the thermally conductive substrate.
10. The system of claim 9 wherein at least one of the first apparatus and second apparatus comprise a die, the die to connect with a portion of the tape lead exposed through the elastomer, the thermally conductive substrate to spread heat from the die.
11. The system of claim 10 further comprising an elastomer bond between the die of the second apparatus to the thermally conductive substrate of the first apparatus.
12. The system of claim 9 further comprising a printed circuit board attached to the at least one solder ball interconnect of the first apparatus, the printed circuit board to dissipate heat from the stacked configuration.
13. A method comprising: adhering a polymer resin to a thermally conductive substrate; attaching a tape lead to the polymer resin; attaching an elastomer to the tape lead, the elastomer having an opening to expose a portion of the tape lead; attaching the elastomer to a die; and attaching the die to the tape lead.
14. The method of claim 13 further comprising, attaching at least one ball to the tape lead.
15. The method of claim 14 wherein the ball is a solder ball.
16. The method of claim 14 further comprising, forming a second elastomer layer to the exposed side of the die.
17. The method of claim 16 further comprising, attaching the second elastomer layer to a an adjacent thermally conductive substrate.
18. The method of claim 17 further comprising, repeating the method of claim 14 to create a stacked assembly with thermally conductive substrates.
19. The method of claim 13 wherein the die is a DRAM.
20. The method of claim 13 wherein the polymer resin is a polyimide tape.
21. The method of claim 13 wherein the thermally conductive substrate is a copper heat spreader.
22. The method of claim 13 wherein the tape lead is a copper tape lead.
PCT/US2005/047689 2004-12-30 2005-12-29 Semiconductor device with embedded heat spreader WO2006072107A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007549698A JP2008527697A (en) 2004-12-30 2005-12-29 Embedded heat spreader
DE112005003273T DE112005003273T5 (en) 2004-12-30 2005-12-29 Embedded heat spreader

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/027,291 2004-12-30
US11/027,291 US7183638B2 (en) 2004-12-30 2004-12-30 Embedded heat spreader

Publications (2)

Publication Number Publication Date
WO2006072107A2 true WO2006072107A2 (en) 2006-07-06
WO2006072107A3 WO2006072107A3 (en) 2006-09-28

Family

ID=36581718

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/047689 WO2006072107A2 (en) 2004-12-30 2005-12-29 Semiconductor device with embedded heat spreader

Country Status (7)

Country Link
US (2) US7183638B2 (en)
JP (1) JP2008527697A (en)
CN (1) CN101095225A (en)
DE (1) DE112005003273T5 (en)
GB (1) GB2438528B (en)
TW (1) TWI314039B (en)
WO (1) WO2006072107A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049313B2 (en) * 2006-09-20 2011-11-01 Freescale Semiconductor, Inc. Heat spreader for semiconductor package
US8643172B2 (en) * 2007-06-08 2014-02-04 Freescale Semiconductor, Inc. Heat spreader for center gate molding
US20110012257A1 (en) * 2009-07-14 2011-01-20 Freescale Semiconductor, Inc Heat spreader for semiconductor package
US9269646B2 (en) 2011-11-14 2016-02-23 Micron Technology, Inc. Semiconductor die assemblies with enhanced thermal management and semiconductor devices including same
US9818457B1 (en) 2016-09-30 2017-11-14 Intel Corporation Extended platform with additional memory module slots per CPU socket
US10216657B2 (en) 2016-09-30 2019-02-26 Intel Corporation Extended platform with additional memory module slots per CPU socket and configured for increased performance

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861666A (en) * 1995-08-30 1999-01-19 Tessera, Inc. Stacked chip assembly
JPH11145345A (en) * 1997-11-12 1999-05-28 Hitachi Ltd Semiconductor device and its manufacture
WO2003019654A1 (en) * 2001-08-22 2003-03-06 Tessera, Inc. Stacked chip assembly with stiffening layer
US20030174478A1 (en) * 1999-10-27 2003-09-18 Stefano Oggioni Ball grid array module

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1617748A1 (en) 1966-08-06 1971-04-08 Rajewsky Boris Prof Dr Rheumatism diagnostic
US4547570A (en) 1983-10-20 1985-10-15 The Dow Chemical Company Process for preparing cellulose ethers
US4650716A (en) 1985-05-14 1987-03-17 Hercules Incorporated Novel salts of carboxymethylcellulose
US4689408A (en) 1985-05-14 1987-08-25 Hercules Incorporated Method of preparing salts of carboxymethylcellulose
US4975761A (en) * 1989-09-05 1990-12-04 Advanced Micro Devices, Inc. High performance plastic encapsulated package for integrated circuit die
JP2780649B2 (en) * 1994-09-30 1998-07-30 日本電気株式会社 Semiconductor device
JP2944449B2 (en) * 1995-02-24 1999-09-06 日本電気株式会社 Semiconductor package and manufacturing method thereof
JP2891665B2 (en) * 1996-03-22 1999-05-17 株式会社日立製作所 Semiconductor integrated circuit device and method of manufacturing the same
DE19746264A1 (en) 1997-10-20 1999-04-29 Wolff Walsrode Ag Cellulose ether with low salt content
US6020629A (en) * 1998-06-05 2000-02-01 Micron Technology, Inc. Stacked semiconductor package and method of fabrication
US6278616B1 (en) * 1998-07-07 2001-08-21 Texas Instruments Incorporated Modifying memory device organization in high density packages
US6320126B1 (en) * 1998-07-14 2001-11-20 Texas Instruments Incorporated Vertical ball grid array integrated circuit package
JP2000077563A (en) * 1998-08-31 2000-03-14 Sharp Corp Semiconductor device and its manufacture
ATE483480T1 (en) 1998-12-16 2010-10-15 Tno ACID SUPERABSORBENT POLYSACCHARIDES
US6130477A (en) * 1999-03-17 2000-10-10 Chen; Tsung-Chieh Thin enhanced TAB BGA package having improved heat dissipation
US6093969A (en) * 1999-05-15 2000-07-25 Lin; Paul T. Face-to-face (FTF) stacked assembly of substrate-on-bare-chip (SOBC) modules
TW409377B (en) * 1999-05-21 2000-10-21 Siliconware Precision Industries Co Ltd Small scale ball grid array package
DE19933265A1 (en) * 1999-07-15 2001-02-01 Siemens Ag TSOP memory chip package assembly
US6122171A (en) * 1999-07-30 2000-09-19 Micron Technology, Inc. Heat sink chip package and method of making
KR100324333B1 (en) * 2000-01-04 2002-02-16 박종섭 Stacked package and fabricating method thereof
US6577013B1 (en) * 2000-09-05 2003-06-10 Amkor Technology, Inc. Chip size semiconductor packages with stacked dies
US6664649B2 (en) * 2001-02-28 2003-12-16 Siliconware Precision Industries Co., Ltd. Lead-on-chip type of semiconductor package with embedded heat sink
US6897565B2 (en) * 2001-10-09 2005-05-24 Tessera, Inc. Stacked packages

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861666A (en) * 1995-08-30 1999-01-19 Tessera, Inc. Stacked chip assembly
JPH11145345A (en) * 1997-11-12 1999-05-28 Hitachi Ltd Semiconductor device and its manufacture
US20030174478A1 (en) * 1999-10-27 2003-09-18 Stefano Oggioni Ball grid array module
WO2003019654A1 (en) * 2001-08-22 2003-03-06 Tessera, Inc. Stacked chip assembly with stiffening layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 10, 31 August 1999 (1999-08-31) -& JP 11 145345 A (HITACHI LTD), 28 May 1999 (1999-05-28) *

Also Published As

Publication number Publication date
CN101095225A (en) 2007-12-26
US20060145320A1 (en) 2006-07-06
US7268020B2 (en) 2007-09-11
TWI314039B (en) 2009-08-21
US20070128768A1 (en) 2007-06-07
GB2438528A (en) 2007-11-28
US7183638B2 (en) 2007-02-27
GB0712810D0 (en) 2007-08-08
JP2008527697A (en) 2008-07-24
GB2438528B (en) 2010-10-27
TW200631492A (en) 2006-09-01
WO2006072107A3 (en) 2006-09-28
DE112005003273T5 (en) 2008-04-17

Similar Documents

Publication Publication Date Title
US9293389B2 (en) Method of manufacturing a semiconductor package including a surface profile modifier
US8357999B2 (en) Assembly having stacked die mounted on substrate
US7202561B2 (en) Semiconductor package with heat dissipating structure and method of manufacturing the same
US7656015B2 (en) Packaging substrate having heat-dissipating structure
US7872869B2 (en) Electronic chip module
US7786571B2 (en) Heat-conductive package structure
US7268020B2 (en) Embedded heat spreader
US20190333836A1 (en) Semiconductor packages
KR20060004789A (en) Multi chip package having heat dissipating path
US7723843B2 (en) Multi-package module and electronic device using the same
TWI391084B (en) Pcb structure having heat-dissipating member
US20030209808A1 (en) Semiconductor device having semiconductor chips mounted on package substrate
JP2012015225A (en) Semiconductor device
US7564128B2 (en) Fully testable surface mount die package configured for two-sided cooling
WO2007057952A1 (en) Electronic element, package having same, and electronic device
US7235889B2 (en) Integrated heatspreader for use in wire bonded ball grid array semiconductor packages
US6784536B1 (en) Symmetric stack up structure for organic BGA chip carriers
US20160155683A1 (en) Semiconductor package having heat-dissipation member
CN111354691B (en) Package substrate structure
KR20080085441A (en) Stack package and method for fabricating thereof
KR20220022917A (en) Semiconductor package
US20070096333A1 (en) Optimal stacked die organization
WO2014171403A1 (en) Semiconductor device
KR100727728B1 (en) Semiconductor package
US8466563B2 (en) Apparatus and methods for 3-D stacking of thinned die

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200580045398.X

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2007549698

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1120050032736

Country of ref document: DE

ENP Entry into the national phase

Ref document number: 0712810

Country of ref document: GB

Kind code of ref document: A

Free format text: PCT FILING DATE = 20051229

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 05856141

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 05856141

Country of ref document: EP

Kind code of ref document: A2

RET De translation (de og part 6b)

Ref document number: 112005003273

Country of ref document: DE

Date of ref document: 20080417

Kind code of ref document: P

REG Reference to national code

Ref country code: DE

Ref legal event code: 8607