WO2006076484A3 - Periodic diffracting system for sample measurement - Google Patents

Periodic diffracting system for sample measurement Download PDF

Info

Publication number
WO2006076484A3
WO2006076484A3 PCT/US2006/001067 US2006001067W WO2006076484A3 WO 2006076484 A3 WO2006076484 A3 WO 2006076484A3 US 2006001067 W US2006001067 W US 2006001067W WO 2006076484 A3 WO2006076484 A3 WO 2006076484A3
Authority
WO
WIPO (PCT)
Prior art keywords
film
sample measurement
model
periodic diffracting
thickness
Prior art date
Application number
PCT/US2006/001067
Other languages
French (fr)
Other versions
WO2006076484A2 (en
Inventor
Noah Bareket
Daniel C Wack
Guoheng Zhao
Original Assignee
Kla Tencor Tech Corp
Noah Bareket
Daniel C Wack
Guoheng Zhao
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Tech Corp, Noah Bareket, Daniel C Wack, Guoheng Zhao filed Critical Kla Tencor Tech Corp
Priority to JP2007551372A priority Critical patent/JP5341354B2/en
Publication of WO2006076484A2 publication Critical patent/WO2006076484A2/en
Priority to KR1020077017263A priority patent/KR101342410B1/en
Publication of WO2006076484A3 publication Critical patent/WO2006076484A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry

Abstract

To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.
PCT/US2006/001067 2005-01-12 2006-01-11 Periodic diffracting system for sample measurement WO2006076484A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007551372A JP5341354B2 (en) 2005-01-12 2006-01-11 System for measuring a sample having a layer containing a periodic diffractive structure
KR1020077017263A KR101342410B1 (en) 2005-01-12 2007-07-26 System for measuring a sample with a layer containing a periodic diffracting structure

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US64371105P 2005-01-12 2005-01-12
US60/643,711 2005-01-12
US11/329,500 US7515253B2 (en) 2005-01-12 2006-01-10 System for measuring a sample with a layer containing a periodic diffracting structure
US11/329,500 2006-01-10

Publications (2)

Publication Number Publication Date
WO2006076484A2 WO2006076484A2 (en) 2006-07-20
WO2006076484A3 true WO2006076484A3 (en) 2009-05-07

Family

ID=36678181

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/001067 WO2006076484A2 (en) 2005-01-12 2006-01-11 Periodic diffracting system for sample measurement

Country Status (4)

Country Link
US (2) US7515253B2 (en)
JP (1) JP5341354B2 (en)
KR (1) KR101342410B1 (en)
WO (1) WO2006076484A2 (en)

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US7515253B2 (en) * 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
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US8294907B2 (en) * 2006-10-13 2012-10-23 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7729873B2 (en) * 2007-08-28 2010-06-01 Tokyo Electron Limited Determining profile parameters of a structure using approximation and fine diffraction models in optical metrology
JP4950813B2 (en) * 2007-08-30 2012-06-13 大日本スクリーン製造株式会社 Spectral ellipsometer, film thickness measuring apparatus, and focus adjustment method of spectroscopic ellipsometer
US7930657B2 (en) * 2008-01-23 2011-04-19 Micron Technology, Inc. Methods of forming photomasks
US8199321B2 (en) * 2008-05-05 2012-06-12 Applied Spectra, Inc. Laser ablation apparatus and method
US9061369B2 (en) * 2009-11-03 2015-06-23 Applied Spectra, Inc. Method for real-time optical diagnostics in laser ablation and laser processing of layered and structured materials
JP5264374B2 (en) * 2008-09-02 2013-08-14 東京エレクトロン株式会社 Pattern shape inspection method and semiconductor device manufacturing method
EP2251638B1 (en) * 2009-05-12 2013-04-24 LayTec Aktiengesellschaft Method and apparatus for determining the layer thickness and the refractive index of a sample
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US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
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US10458912B2 (en) * 2016-08-31 2019-10-29 Kla-Tencor Corporation Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity
US9976969B1 (en) 2016-10-28 2018-05-22 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for excimer-laser annealing process
US10746530B2 (en) * 2018-12-07 2020-08-18 Onto Innovation Inc. Optical metrology device for measuring samples having thin or thick films
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Also Published As

Publication number Publication date
US20080037005A1 (en) 2008-02-14
KR20070093438A (en) 2007-09-18
JP5341354B2 (en) 2013-11-13
KR101342410B1 (en) 2013-12-17
US20090190141A1 (en) 2009-07-30
JP2008530519A (en) 2008-08-07
WO2006076484A2 (en) 2006-07-20
US7515253B2 (en) 2009-04-07

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