WO2006081004A2 - Methods and arrangement for the reduction of byproduct deposition in a plasma processing system - Google Patents
Methods and arrangement for the reduction of byproduct deposition in a plasma processing system Download PDFInfo
- Publication number
- WO2006081004A2 WO2006081004A2 PCT/US2005/045729 US2005045729W WO2006081004A2 WO 2006081004 A2 WO2006081004 A2 WO 2006081004A2 US 2005045729 W US2005045729 W US 2005045729W WO 2006081004 A2 WO2006081004 A2 WO 2006081004A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- deposition barrier
- plasma processing
- deposition
- processing chamber
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Definitions
- the present invention relates in general to substrate manufacturing technologies and in particular to methods and arrangement for the reduction of byproduct deposition in a plasma processing system.
- a substrate e.g., a semiconductor wafer or a glass panel such as one used in flat panel display manufacturing
- plasma is often employed.
- the substrate is divided into a plurality of dies, or rectangular areas, each of which will become an integrated circuit.
- the substrate is then processed in a series of steps in which materials are selectively removed (etching) and deposited (deposition) in order to form electrical components thereon.
- Many plasma processes include some type of plasma bombardment.
- pure ion etching often called sputtering, is used to dislodge material from the substrate (e.g., oxide, etc.).
- an inert gas such as Argon
- Argon is ionized in a plasma and subsequently accelerate toward a negatively charged substrate.
- reactive ion etch also called ion-enhanced etching, combines both chemical and ion processes in order to remove material from the substrate (e.g., photoresist, BARC, TiN, Oxide, etc.).
- RIE reactive ion etch
- ions in the plasma enhance a chemical process by striking the surface of the substrate, and subsequently breaking the chemical bonds of the atoms on the surface in order to make them more susceptible to reacting with the molecules of the chemical process.
- a plasma processing system may also produce pollutants.
- pollutants are generated by the plasma process from materials in the etchant gases (e.g., carbon, fluorine, hydrogen, nitrogen, oxygen, argon, xenon, silicon, boron, chlorine, etc.), from materials in the substrate (e.g. photoresist, silicon, oxygen, nitrogen, aluminum, titanium, etc.), or from structural materials within the plasma processing chamber itself (e.g., aluminum, quartz, etc.).
- etchant gases e.g., carbon, fluorine, hydrogen, nitrogen, oxygen, argon, xenon, silicon, boron, chlorine, etc.
- materials in the substrate e.g. photoresist, silicon, oxygen, nitrogen, aluminum, titanium, etc.
- structural materials within the plasma processing chamber itself e.g., aluminum, quartz, etc.
- Some pollutants are volatile, and may be substantially pumped away by a vacuum system, while other pollutants form non-volatile or low-volatile sputtered species that tend to be deposited on interior surfaces and plasma chamber walls that tend to be difficult to efficiently evacuate from the plasma chamber.
- the resulting pollutant deposits may eventually flake and hence increase susceptibility of substrate defects, reduce the mean time between cleaning (MTBC), reduce yield, etc.
- MTBC mean time between cleaning
- conductive film deposits may form on plasma chamber interior surfaces which may impact the FW coupling of the plasma source and bias.
- byproduct deposits may contribute to plasma density drift.
- Non-volatile and low-volatile byproducts include direct line-of-sight deposition of sputtered material, direct ion enhance etch byproduct deposition, volatile byproduct condensation, high sticking coefficient plasma dissociated byproducts, ion assisted deposition of plasma species, etc.
- Examples include high-k dielectrics (HfOx, HfSixOy, etc) byproducts, metal electrode (Pt, Ir, IrOx, etc.) byproducts, memory material byproducts (PtMn, NiFe, CoFe, FeW, etc), interconnect byproducts (Cu, Ru, CoWP, Ta, etc.).
- the emission profile for the sputtered atoms is generally characterized by a cosine distribution. This means that the emission rate at some angle other than normal (perpendicular) is equal to the normal incidence emission rate times the cosine of the angle from the normal. This is usually drawn as a circle touching the impact point, in which the circle is the envelope of the magnitudes of the emission at other angles. Generally, since sputtered atoms tend to be neutral, it is not possible to redirect their trajectories in flight, and hence the sputtered atoms tend to travel in straight lines.
- the degree of deposit adhesion to surfaces within the chamber, and hence the subsequent degree of potential contamination, is usually dependent on the specific plasma processing recipe (e.g., chemistry, power, and temperature) and the initial surface condition of chamber process kits. Since substantially removing deposits may be time consuming, a plasma processing system chamber is generally substantially cleaned only when particle contamination levels reach unacceptable levels, when the plasma processing system must be opened to replace a consumable structure (e.g., edge ring, etc.), or as part of scheduled preventive maintenance (PM).
- a plasma processing recipe e.g., chemistry, power, and temperature
- PM scheduled preventive maintenance
- FIG. 1 a simplified diagram of an inductively coupled plasma processing system, such as a Lam Research Transformer Coupled Plasma Processing SystemTM, is shown.
- the plasma chamber is comprised of a bottom piece 150 located in the lower chamber, and a detachable top piece 152 located in the upper chamber.
- an appropriate set of gases is flowed into chamber 102 from gas distribution system 122 and through dielectric coupling window 104.
- These plasma processing gases may be subsequently ionized at injector 108 to form a plasma 110 in a plasma generating region, in order to process (e.g., etch or deposition) exposed areas of substrate 1 14, such as a semiconductor substrate or a glass pane, positioned with edge ring 115 on an electrostatic chuck 116.
- substrate 1 14 such as a semiconductor substrate or a glass pane
- a first RF generator 134 generates the plasma as well as controls the plasma density, while a second RF generator 138 generates bias RF, commonly used to control the DC bias and the ion bombardment energy. Further coupled to source RF generator 134 is matching network 136a, and to bias RF generator 138 is matching network 136b, that attempt to match the impedances of the RF power sources to that of plasma 1 10. Furthermore, pump 111 is commonly used to evacuate the ambient atmosphere from plasma chamber 102 in order to achieve the required pressure to sustain plasma 110.
- the invention relates, in one embodiment, in a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber.
- the method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.
- the invention relates, in another embodiment, to a method of reducing a set of byproduct deposits on a set of plasma chamber surfaces in a plasma reactor.
- the method includes positioning a substrate in a plasma processing chamber.
- the method further includes positioning a deposition barrier in the plasma processing chamber, wherein a first plasma is configured to surround the deposition barrier when struck, and whereby the deposition barrier is configured to make contact with a first subset of the set of byproduct deposits from the substrate.
- the method also includes re-positioning the deposition barrier in the plasma processing chamber, wherein a second plasma is configured to surround the deposition barrier when struck, and whereby the deposition barrier is configured to make contact with a second subset of the set of byproduct deposits from the substrate.
- the invention relates, in another embodiment, in a plasma processing system, to an arrangement for reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber.
- the arrangement includes barrier means disposed in the plasma processing chamber, the barrier means being configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.
- the arrangement also includes attachment means for attaching the barrier means to one of a top, bottom, and side of an interior of the plasma processing chamber.
- the invention relates, in another embodiment, to a deposition barrier arrangement configured to reduce byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber.
- the arrangement includes a deposition barrier configured to be disposed in a plasma generating region of the plasma processing chamber, the deposition barrier being configured to enable at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and thereby reducing the byproduct deposits on the set of plasma chamber surfaces.
- FIG. 1 shows a simplified diagram of a inductively coupled plasma processing system, such as a Lam Transformer Coupled Plasma Processing System
- FIG. 2 shows a simplified diagram of a inductively coupled plasma processing system with a deposition ' barrier, according to one embodiment of the invention
- FIG. 3 shows a simplified diagram of a inductively coupled plasma processing system in which a deposition barrier is supported with a structure that is attached to the bottom of the plasma chamber, according to one embodiment of the invention
- FIG. 4 shows a simplified diagram of a inductively coupled plasma processing system in which a deposition barrier is supported with a structure that is attached to the top of the plasma chamber, according to one embodiment of the invention
- FIG. 5 shows a simplified diagram of a inductively coupled plasma processing system in which a deposition barrier is supported with a structure that is attached to a side of the plasma chamber, according to one embodiment of the invention
- FIG. 6 shows a simplified diagram of a inductively coupled plasma processing system in which a deposition barrier is supported with a structure that is attached to a chuck, according to one embodiment of the invention.
- FIG. 7 shows a simplified diagram of a method for the reduction of low volatility line-of-sight byproducts in a plasma processing system, according to one embodiment of the invention.
- sputtering deposition can be reduced on a set of plasma chamber surfaces through the use of a deposition barrier that is substantially surrounded by a plasma. That is, a deposition barrier may be positioned such that if a particle is sputtered from the substrate toward a plasma chamber surface, the particle will first strike the deposition barrier.
- sputtered atoms that would normally collide with other surfaces in the chamber, as well as the pumping manifold including the turbo pump can be intercepted with a deposition barrier that is substantially easy to remove.
- the deposition barrier may be automatically transferred in and out of the plasma chamber to an ex-situ cleaning process.
- the deposition barrier can also protect the electrostatic chuck during wafer-less auto clean WACTM (or wafer less chamber conditioning), in which plasma chamber components are exposed to the plasma as part of the cleaning or conditioning/seasoning process.
- FIG.2 a simplified diagram of an inductive coupled plasma processing system is shown, according to one embodiment of the invention.
- the plasma chamber is comprised of a bottom piece 250 located in the lower chamber, and a detachable top piece 252 located in the upper chamber.
- an appropriate set of gases is flowed into chamber 202 from gas distribution system 222 and through dielectric coupling window 204.
- These plasma processing gases may be subsequently ionized at injector 209 to form a plasma 210, in order to process (e.g., etch or deposition) exposed areas of substrate 214, such as a semiconductor substrate or a glass pane, positioned with edge ring 215 on an electrostatic chuck 216.
- a first RP generator 234 generates the plasma as well as controls the plasma density, while a second RF generator 238 generates bias RF, commonly used to control the DC bias and the ion bombardment energy. Further coupled to source RF generator 234 is matching network 236a, and to bias RF generator 238 is matching network 236b, that attempt to match the impedances of the RF power sources to that of plasma 210. Furthermore, pump 211 is commonly used to evacuate the ambient atmosphere from plasma chamber 202 in order to achieve the required pressure to sustain plasma 220.
- a deposition barrier 206 is positioned at a height above the bottom surface of said plasma reactor, such that if a particle is sputtered from the substrate toward a plasma chamber wall, the particle will first strike the deposition barrier.
- FIG.3 the simplified diagram of a inductive coupled plasma processing system of FIG. 2 is shown, in which a deposition barrier is supported with a structure 308 that is attached to the bottom of the plasma chamber (lower interior surface), according to one embodiment of the invention.
- FIG.4 the simplified diagram of a inductive coupled plasma processing system of FIG. 2 is shown, in which a deposition barrier is supported with a structure 408 that is attached to the top of the plasma chamber (upper interior surface), according to one embodiment of the invention.
- FIG.5 the simplified diagram of a inductive coupled plasma processing system of FIG. 2 is shown, in which a deposition barrier is supported with a structure 508 that is attached to a side of the plasma chamber (side interior surface), according to one embodiment of the invention.
- FIG.6 the simplified diagram of an inductive coupled plasma processing system of FIG. 2 is shown, in which a deposition barrier is supported with a structure 608 that is attached to chuck 216, according to one embodiment of the invention.
- the height of the bottom surface of the deposition barrier can be repositioned relative to the bottom surface of said plasma reactor, in order to better optimize plasma processing conditions.
- the deposition barrier is substantially transparent to a generated RF.
- the deposition barrier comprises a material that is substantially resistant to plasma attack (i.e., quartz, Y 2 O 3, yttrium, CeO 2j cerium, ZrO 2 , zirconium, Teflon, Vespel, substantially pure plastic, ceramic, SiC, BN, BC, SiN, SiO, etc.).
- the deposition barrier comprises a material that generates a set volatile etch products when exposed to said plasma.
- the deposition barrier is heated independently of the plasma.
- a RF bias is applied to the deposition barrier.
- deposition barrier can be removed in-situ, for example by a robotic arm.
- deposition barrier can be replaced in-situ; for example by a robotic arm.
- the deposition barrier may be removed from the plasma processing system by a vacuum robot under automatic control.
- deposition barrier includes a substantially continuous surface. In yet another embodiment, deposition barrier includes a set of holes. In yet another embodiment, deposition barrier can be removed prior to, simultaneously with, or after the removal of said substrate from said plasma chamber. In yet another embodiment, deposition barrier is a Faraday barrier.
- the deposition barrier can be cleaned and reused.
- plasma processing system includes a source RF that is coupled from the top, side, or bottom of the plasma chamber.
- a set of plasma chamber walls can be heated and/or cooled independently of the plasma.
- the deposition barrier may be heated to encourage adhesion of thicker films and to prevent incorporation of volatile species which may lead to premature flaking.
- the deposition barrier may be cooled to increase the sticking probability of substantially volatile deposition by products and to enable thicker films before flaking.
- the deposition barrier may be cleaned in-situ by a plasma cleaning process when the deposition barrier has cooled down from being hot.
- the deposition barrier is cleaned in-situ by a plasma cleaning process when the deposition barrier has heated up from being cool.
- the deposition barrier is comprised of a metal that does not substantially generate a set of volatile etch products when exposed to the plasma (e.g. Ni, Pt, Ir, anodized Al, Cu, etc.).
- the deposition barrier may be cleaned in-situ by a plasma cleaning process. In yet another embodiment, the deposition barrier may be cleaned in-situ by a wet chemical flush process. In yet another embodiment, the deposition barrier comprises a material that is substantially resistant to a wet clean process. In yet another embodiment, the deposition barrier is coated by a material that is substantially resistant to a wet clean process. In another embodiment, the deposition barrier may be lowered onto the chuck, in order to protect the chuck, while running an in-situ plasma chamber clean. In another embodiment, the deposition barrier may be lowered onto the chuck, in order to protect the chuck, while the chamber is idle between substrate processing cycles.
- the deposition barrier may protect a source RF.
- the source RF comprises an inductive source.
- the source RF comprises a capacitive source.
- the source RF comprises an ECR (electron-cyclotron resonance) source.
- the source RF comprises a microwave source.
- the source RF may be coupled from the top of the plasma chamber.
- the source RF may be coupled from the side of the plasma chamber.
- the source RF may be coupled from the bottom of the plasma chamber.
- the deposition barrier may protect a set of plasma gas injectors from erosion and deposition clogging.
- the deposition barrier may protect a set of in-situ metrology sensors (such as optical emission, interferometry, etc.) or the transparent windows covering them from erosion and deposition clogging.
- the deposition barrier surface has a pre-determined roughness which facilitates control of adhesion of the depositing material.
- the deposition barrier surface has a pre-determined surface composition which facilitates control of adhesion of the depositing material.
- FIG. 7 a simplified method for the reduction of low volatility products in a plasma processing system is shown, according to one embodiment of the invention.
- a substrate is positioned in a plasma processing chamber at step 702.
- a deposition barrier is positioned in the plasma processing chamber, wherein a plasma can be struck that substantially surrounds the deposition barrier, at step 704.
- a plasma is then struck within the plasma processing chamber, at step 706. If a particle is sputtered from the substrate toward a plasma chamber surface from the set of plasma chamber surfaces, the particle will strike said deposition barrier, as step 708.
- Advantages of the invention include methods and arrangement for the reduction of byproduct deposition in a plasma processing system. Additional advantages include substantially improving productivity and device yield, the use of a common plasma chamber design across multiple plasma processing applications (i.e, FeRAM, MRAM, Cu, MEMS, metal gate high-k gate, etc.), process repeatability, low CoC, low COO, high MTBC, low MTTCR, and the extended lifetime of plasma chamber parts.
Abstract
In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.
Description
METHODS AND ARRANGEMENT FOR THE REDUCTION OF BYPRODUCT DEPOSITION IN A PLASMA PROCESSING SYSTEM
BACKGROUND OF THE INVENTION
[0001] The present invention relates in general to substrate manufacturing technologies and in particular to methods and arrangement for the reduction of byproduct deposition in a plasma processing system.
[0002] In the processing of a substrate, e.g., a semiconductor wafer or a glass panel such as one used in flat panel display manufacturing, plasma is often employed. As part of the processing of a substrate (chemical vapor deposition, plasma enhanced chemical vapor deposition, physical vapor deposition, etc.) for example, the substrate is divided into a plurality of dies, or rectangular areas, each of which will become an integrated circuit. The substrate is then processed in a series of steps in which materials are selectively removed (etching) and deposited (deposition) in order to form electrical components thereon.
[0003] Many plasma processes include some type of plasma bombardment. For example, pure ion etching, often called sputtering, is used to dislodge material from the substrate (e.g., oxide, etc.). Commonly an inert gas, such as Argon, is ionized in a plasma and subsequently accelerate toward a negatively charged substrate. Likewise, reactive ion etch (RIE), also called ion-enhanced etching, combines both chemical and ion processes in order to remove material from the substrate (e.g., photoresist, BARC, TiN, Oxide, etc.). Generally ions in the plasma enhance a chemical process by striking the surface of the substrate, and subsequently breaking the chemical bonds of the atoms on the surface in order to make them more susceptible to reacting with the molecules of the chemical process.
[0004] However, a plasma processing system may also produce pollutants.
Generally comprised of organic and inorganic byproducts, pollutants are generated by the plasma process from materials in the etchant gases (e.g., carbon, fluorine, hydrogen, nitrogen, oxygen, argon, xenon, silicon, boron, chlorine, etc.), from materials in the substrate (e.g. photoresist, silicon, oxygen, nitrogen, aluminum, titanium, etc.), or from structural materials within the plasma processing chamber itself (e.g., aluminum, quartz, etc.).
[0005] Some pollutants are volatile, and may be substantially pumped away by a
vacuum system, while other pollutants form non-volatile or low-volatile sputtered species that tend to be deposited on interior surfaces and plasma chamber walls that tend to be difficult to efficiently evacuate from the plasma chamber. The resulting pollutant deposits may eventually flake and hence increase susceptibility of substrate defects, reduce the mean time between cleaning (MTBC), reduce yield, etc. For example, depending on the plasma process, conductive film deposits may form on plasma chamber interior surfaces which may impact the FW coupling of the plasma source and bias. In addition, byproduct deposits may contribute to plasma density drift.
[0006] Non-volatile and low-volatile byproducts include direct line-of-sight deposition of sputtered material, direct ion enhance etch byproduct deposition, volatile byproduct condensation, high sticking coefficient plasma dissociated byproducts, ion assisted deposition of plasma species, etc. Examples include high-k dielectrics (HfOx, HfSixOy, etc) byproducts, metal electrode (Pt, Ir, IrOx, etc.) byproducts, memory material byproducts (PtMn, NiFe, CoFe, FeW, etc), interconnect byproducts (Cu, Ru, CoWP, Ta, etc.).
[0007] In general, the emission profile for the sputtered atoms is generally characterized by a cosine distribution. This means that the emission rate at some angle other than normal (perpendicular) is equal to the normal incidence emission rate times the cosine of the angle from the normal. This is usually drawn as a circle touching the impact point, in which the circle is the envelope of the magnitudes of the emission at other angles. Generally, since sputtered atoms tend to be neutral, it is not possible to redirect their trajectories in flight, and hence the sputtered atoms tend to travel in straight lines.
[0008] The degree of deposit adhesion to surfaces within the chamber, and hence the subsequent degree of potential contamination, is usually dependent on the specific plasma processing recipe (e.g., chemistry, power, and temperature) and the initial surface condition of chamber process kits. Since substantially removing deposits may be time consuming, a plasma processing system chamber is generally substantially cleaned only when particle contamination levels reach unacceptable levels, when the plasma processing system must be opened to replace a consumable structure (e.g., edge ring, etc.), or as part of scheduled preventive maintenance (PM).
[0009] Referring now to FIG. 1, a simplified diagram of an inductively coupled
plasma processing system, such as a Lam Research Transformer Coupled Plasma Processing System™, is shown. In a common configuration, the plasma chamber is comprised of a bottom piece 150 located in the lower chamber, and a detachable top piece 152 located in the upper chamber. Generally, an appropriate set of gases is flowed into chamber 102 from gas distribution system 122 and through dielectric coupling window 104. These plasma processing gases may be subsequently ionized at injector 108 to form a plasma 110 in a plasma generating region, in order to process (e.g., etch or deposition) exposed areas of substrate 1 14, such as a semiconductor substrate or a glass pane, positioned with edge ring 115 on an electrostatic chuck 116.
[0010] A first RF generator 134 generates the plasma as well as controls the plasma density, while a second RF generator 138 generates bias RF, commonly used to control the DC bias and the ion bombardment energy. Further coupled to source RF generator 134 is matching network 136a, and to bias RF generator 138 is matching network 136b, that attempt to match the impedances of the RF power sources to that of plasma 1 10. Furthermore, pump 111 is commonly used to evacuate the ambient atmosphere from plasma chamber 102 in order to achieve the required pressure to sustain plasma 110.
[0011] While these are severe issues to tackle requiring complicated high temperature chamber designs, special materials etc, there is no commonality to the behavior of these different materials. For example, if plasma process conditions allow it, a clean or a self-cleaning plasma recipe can be developed, or the chamber surfaces can be designed with materials that have a reduced sticking coefficient to the problem byproduct, or if the byproducts are sufficiently adhered or "stuck" to the chamber surfaces, the plasma process can be run until flaking becomes problematic. However, since these solutions are very process sensitive, the possibility of a single robust reactor design and process approach which can handle most of these materials and potential chemistries is problematic.
[0012] In view of the foregoing, there are desired methods and arrangement for the reduction of byproduct deposition in a plasma processing system.
SUMMARY OF THE INVENTION
[0013] The invention relates, in one embodiment, in a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.
[0014] The invention relates, in another embodiment, to a method of reducing a set of byproduct deposits on a set of plasma chamber surfaces in a plasma reactor. The method includes positioning a substrate in a plasma processing chamber. The method further includes positioning a deposition barrier in the plasma processing chamber, wherein a first plasma is configured to surround the deposition barrier when struck, and whereby the deposition barrier is configured to make contact with a first subset of the set of byproduct deposits from the substrate. The method also includes re-positioning the deposition barrier in the plasma processing chamber, wherein a second plasma is configured to surround the deposition barrier when struck, and whereby the deposition barrier is configured to make contact with a second subset of the set of byproduct deposits from the substrate.
[0015] The invention relates, in another embodiment, in a plasma processing system, to an arrangement for reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber. The arrangement includes barrier means disposed in the plasma processing chamber, the barrier means being configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces. The arrangement also includes attachment means for attaching the barrier means to one of a top, bottom, and side of an interior of the plasma processing chamber.
[0016] The invention relates, in another embodiment, to a deposition barrier arrangement configured to reduce byproduct deposits on a set of plasma chamber surfaces
of a plasma processing chamber. The arrangement includes a deposition barrier configured to be disposed in a plasma generating region of the plasma processing chamber, the deposition barrier being configured to enable at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and thereby reducing the byproduct deposits on the set of plasma chamber surfaces.
[0017] These and other features of the present invention will be described in more detail below in the detailed description of the invention and in conjunction with the following figures.
' BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which:
[0019] FIG. 1 shows a simplified diagram of a inductively coupled plasma processing system, such as a Lam Transformer Coupled Plasma Processing System;
[0020] FIG. 2 shows a simplified diagram of a inductively coupled plasma processing system with a deposition' barrier, according to one embodiment of the invention;
[0021] FIG. 3 shows a simplified diagram of a inductively coupled plasma processing system in which a deposition barrier is supported with a structure that is attached to the bottom of the plasma chamber, according to one embodiment of the invention;
[0022] FIG. 4 shows a simplified diagram of a inductively coupled plasma processing system in which a deposition barrier is supported with a structure that is attached to the top of the plasma chamber, according to one embodiment of the invention;
[0023] FIG. 5 shows a simplified diagram of a inductively coupled plasma processing system in which a deposition barrier is supported with a structure that is attached to a side of the plasma chamber, according to one embodiment of the invention;
[0024] FIG. 6 shows a simplified diagram of a inductively coupled plasma processing system in which a deposition barrier is supported with a structure that is attached to a chuck, according to one embodiment of the invention; and,
[0025] FIG. 7 shows a simplified diagram of a method for the reduction of low
volatility line-of-sight byproducts in a plasma processing system, according to one embodiment of the invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0026] The present invention will now be described in detail with reference to a few preferred embodiments thereof as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and/or structures have not been described in detail in order to not unnecessarily obscure the present invention.
[0027] While not wishing to be bound by theory, it is believed by the inventor herein that sputtering deposition can be reduced on a set of plasma chamber surfaces through the use of a deposition barrier that is substantially surrounded by a plasma. That is, a deposition barrier may be positioned such that if a particle is sputtered from the substrate toward a plasma chamber surface, the particle will first strike the deposition barrier.
[0028] In a non-obvious fashion, sputtered atoms that would normally collide with other surfaces in the chamber, as well as the pumping manifold including the turbo pump, can be intercepted with a deposition barrier that is substantially easy to remove. For example, the deposition barrier may be automatically transferred in and out of the plasma chamber to an ex-situ cleaning process. In one embodiment, the deposition barrier can also protect the electrostatic chuck during wafer-less auto clean WAC™ (or wafer less chamber conditioning), in which plasma chamber components are exposed to the plasma as part of the cleaning or conditioning/seasoning process.
[0029] Referring now to FIG.2, a simplified diagram of an inductive coupled plasma processing system is shown, according to one embodiment of the invention. In a common configuration, the plasma chamber is comprised of a bottom piece 250 located in the lower chamber, and a detachable top piece 252 located in the upper chamber. Generally, an appropriate set of gases is flowed into chamber 202 from gas distribution system 222 and through dielectric coupling window 204. These plasma processing gases may be subsequently ionized at injector 209 to form a plasma 210, in order to process (e.g., etch or
deposition) exposed areas of substrate 214, such as a semiconductor substrate or a glass pane, positioned with edge ring 215 on an electrostatic chuck 216.
[0030] A first RP generator 234 generates the plasma as well as controls the plasma density, while a second RF generator 238 generates bias RF, commonly used to control the DC bias and the ion bombardment energy. Further coupled to source RF generator 234 is matching network 236a, and to bias RF generator 238 is matching network 236b, that attempt to match the impedances of the RF power sources to that of plasma 210. Furthermore, pump 211 is commonly used to evacuate the ambient atmosphere from plasma chamber 202 in order to achieve the required pressure to sustain plasma 220.
[0031] In addition, a deposition barrier 206 is positioned at a height above the bottom surface of said plasma reactor, such that if a particle is sputtered from the substrate toward a plasma chamber wall, the particle will first strike the deposition barrier.
[0032] Referring now to FIG.3, the simplified diagram of a inductive coupled plasma processing system of FIG. 2 is shown, in which a deposition barrier is supported with a structure 308 that is attached to the bottom of the plasma chamber (lower interior surface), according to one embodiment of the invention.
[0033] Referring now to FIG.4, the simplified diagram of a inductive coupled plasma processing system of FIG. 2 is shown, in which a deposition barrier is supported with a structure 408 that is attached to the top of the plasma chamber (upper interior surface), according to one embodiment of the invention.
[0034] Referring now to FIG.5 the simplified diagram of a inductive coupled plasma processing system of FIG. 2 is shown, in which a deposition barrier is supported with a structure 508 that is attached to a side of the plasma chamber (side interior surface), according to one embodiment of the invention.
[0035] Referring now to FIG.6 the simplified diagram of an inductive coupled plasma processing system of FIG. 2 is shown, in which a deposition barrier is supported with a structure 608 that is attached to chuck 216, according to one embodiment of the invention.
[0036] In one embodiment, the height of the bottom surface of the deposition barrier can be repositioned relative to the bottom surface of said plasma reactor, in order to better
optimize plasma processing conditions. In another embodiment, the deposition barrier is substantially transparent to a generated RF. In yet another embodiment, the deposition barrier comprises a material that is substantially resistant to plasma attack (i.e., quartz, Y2O3, yttrium, CeO2j cerium, ZrO2, zirconium, Teflon, Vespel, substantially pure plastic, ceramic, SiC, BN, BC, SiN, SiO, etc.). In yet another embodiment, the deposition barrier comprises a material that generates a set volatile etch products when exposed to said plasma.
[0037] In another embodiment, the deposition barrier is heated independently of the plasma. In yet another embodiment, a RF bias is applied to the deposition barrier. In yet another embodiment, deposition barrier can be removed in-situ, for example by a robotic arm. In yet another embodiment, deposition barrier can be replaced in-situ; for example by a robotic arm. In another embodiment, the deposition barrier may be removed from the plasma processing system by a vacuum robot under automatic control.
[0038] In yet another embodiment, deposition barrier includes a substantially continuous surface. In yet another embodiment, deposition barrier includes a set of holes. In yet another embodiment, deposition barrier can be removed prior to, simultaneously with, or after the removal of said substrate from said plasma chamber. In yet another embodiment, deposition barrier is a Faraday barrier.
[0039] In another embodiment, the deposition barrier can be cleaned and reused. In yet another embodiment, plasma processing system includes a source RF that is coupled from the top, side, or bottom of the plasma chamber. In yet another embodiment, a set of plasma chamber walls can be heated and/or cooled independently of the plasma.
[0040] In another embodiment, the deposition barrier may be heated to encourage adhesion of thicker films and to prevent incorporation of volatile species which may lead to premature flaking. In yet another embodiment, the deposition barrier may be cooled to increase the sticking probability of substantially volatile deposition by products and to enable thicker films before flaking. In yet another embodiment, the deposition barrier may be cleaned in-situ by a plasma cleaning process when the deposition barrier has cooled down from being hot. In yet another embodiment, the deposition barrier is cleaned in-situ by a plasma cleaning process when the deposition barrier has heated up from being cool.
[0041] In another embodiment, the deposition barrier is comprised of a metal that
does not substantially generate a set of volatile etch products when exposed to the plasma (e.g. Ni, Pt, Ir, anodized Al, Cu, etc.).
[0042] In another embodiment, the deposition barrier may be cleaned in-situ by a plasma cleaning process. In yet another embodiment, the deposition barrier may be cleaned in-situ by a wet chemical flush process. In yet another embodiment, the deposition barrier comprises a material that is substantially resistant to a wet clean process. In yet another embodiment, the deposition barrier is coated by a material that is substantially resistant to a wet clean process. In another embodiment, the deposition barrier may be lowered onto the chuck, in order to protect the chuck, while running an in-situ plasma chamber clean. In another embodiment, the deposition barrier may be lowered onto the chuck, in order to protect the chuck, while the chamber is idle between substrate processing cycles.
[0043] In another embodiment the deposition barrier may protect a source RF. In yet another embodiment, the source RF comprises an inductive source. In yet another embodiment, the source RF comprises a capacitive source. In yet another embodiment the source RF comprises an ECR (electron-cyclotron resonance) source. In yet another embodiment, the source RF comprises a microwave source. In yet another embodiment, the source RF may be coupled from the top of the plasma chamber. In yet another embodiment, the source RF may be coupled from the side of the plasma chamber. In yet another embodiment, the source RF may be coupled from the bottom of the plasma chamber.
[0044] In another embodiment, the deposition barrier may protect a set of plasma gas injectors from erosion and deposition clogging. In another embodiment, the deposition barrier may protect a set of in-situ metrology sensors (such as optical emission, interferometry, etc.) or the transparent windows covering them from erosion and deposition clogging. In yet another embodiment, the deposition barrier surface has a pre-determined roughness which facilitates control of adhesion of the depositing material. In another embodiment, the deposition barrier surface has a pre-determined surface composition which facilitates control of adhesion of the depositing material.
[0045] Referring now to FIG. 7, a simplified method for the reduction of low volatility products in a plasma processing system is shown, according to one embodiment of the invention. Initially, a substrate is positioned in a plasma processing chamber at step 702. Next a deposition barrier is positioned in the plasma processing chamber, wherein a
plasma can be struck that substantially surrounds the deposition barrier, at step 704. A plasma is then struck within the plasma processing chamber, at step 706. If a particle is sputtered from the substrate toward a plasma chamber surface from the set of plasma chamber surfaces, the particle will strike said deposition barrier, as step 708.
[0046] The invention has been described in terms of several preferred embodiments, there are alterations, permutations, and equivalents which fall within the scope of this invention. For example, although the present invention has been described in connection with a Lam Research Transformer Coupled Plasma Processing System™, other plasma processing systems may be used (e.g., etching, deposition, ion sputter, electron beam, cluster ion beam, etc.) It should also be noted that there are many alternative ways of implementing the methods of the present invention.
[0047] Advantages of the invention include methods and arrangement for the reduction of byproduct deposition in a plasma processing system. Additional advantages include substantially improving productivity and device yield, the use of a common plasma chamber design across multiple plasma processing applications (i.e, FeRAM, MRAM, Cu, MEMS, metal gate high-k gate, etc.), process repeatability, low CoC, low COO, high MTBC, low MTTCR, and the extended lifetime of plasma chamber parts.
[0048] Having disclosed exemplary embodiments and the best mode, modifications and variations may be made to the disclosed embodiments while remaining within the subject and spirit of the invention as defined by the following claims.
Claims
1. In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber, comprising: providing a deposition barrier in said plasma processing chamber, said deposition barrier is configured to be disposed in a plasma generating region of said plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within said plasma processing chamber to adhere to said deposition barrier and reducing said byproduct deposits on said set of plasma processing chamber surfaces.
2. The method of claim 1 , wherein said deposition barrier is substantially transparent to a generated RF.
3. The method of claim 2 wherein said deposition barrier is a Faraday shield.
4 The method of claim 2, wherein said deposition barrier comprises a material that is substantially resistant to plasma attack.
5 The method of claim 2, wherein said deposition barrier is coated by a material that is substantially resistant to plasma attack.
6. The method of claim 1, wherein said deposition barrier comprises at least one of quartz, Y2O3, yttrium, CeO2, cerium, ZrO2, zirconium, Teflon, Vespel, BN, BC, SiN, SiO, SiC, substantially pure plastic, and ceramic.
7. The method of claim 1, wherein said deposition barrier comprises a material that generates volatile etch byproducts when exposed to said plasma.
8. The method of claim 1 , further comprising independently heating said deposition barrier.
9. The method of claim 1 , further comprising applying a RF bias to said deposition barrier.
10. The method of claim 1 wherein said deposition barrier comprises a metal that does not generate a substantial quantity of volatile etch byproducts when exposed to said plasma.
11. The method of claim 10 wherein said metal includes at least one of Ni, Pt, Ir, anodized Al, and Cu.
12. The method of claim 1 further comprising performing in-situ cleaning of said deposition using a plasma cleaning process.
13. The method of claim 1 further comprising performing ex-situ cleaning of said deposition barrier using a wet chemical flush process.
14. The method of claim 13, wherein said deposition barrier comprises a material that is substantially resistant to a wet clean process.
15. The method of claim 13, wherein said deposition barrier is coated by a material that is substantially resistant to a wet clean process.
16. The method of claim 1, wherein said deposition barrier can be removed while substantially maintaining a vacuum in the plasma chamber.
17. The method of claim 16, wherein said removal can be accomplished by a vacuum robot under automatic control.
18. The method of claim 1, wherein said deposition barrier can be replaced in-situ.
19. The method of claim 1, wherein said deposition barrier includes a substantially continuous surface.
20. The method of claim 1 , wherein said deposition barrier includes a set of holes.
21. The method of claim 1, wherein said deposition barrier is configured to be removed prior to removing said substrate from said plasma processing chamber.
22. The method of claim 1 , wherein said deposition barrier is configured to be removed after removing said substrate from said plasma processing chamber.
23. The method of claim 1, wherein said deposition barrier is configured to be removed simultaneously with removing said substrate from said plasma processing chamber.
24. The method of claim 1, wherein said deposition barrier is reusable after cleaning.
25. The method of claim 1 , wherein said deposition barrier protects a source RP.
26. The method of claim 25 wherein said source RF comprises an inductive source.
27. The method of claim 26 wherein said source RF is configured to protect a dielectric coupling window for said inductive source.
28. The method of claim 25 wherein said source RF comprises a capacitive source.
29. The method of claim 25 wherein said source RF comprises an inductive source and a capacitive source.
30. The method of claim 25 wherein said source RF comprises ECR source.
31. The method of claim 25 wherein said source RF comprises a microwave source.
32. The method of claim 1, wherein said plasma processing system includes a source RF that is coupled from a top of said plasma processing chamber
33. The method of claim 1, wherein said plasma processing system includes a source RF that is coupled from a side of said plasma processing chamber.
34. The method of claim 1, wherein said plasma processing system includes a source RF that is coupled from a bottom of said plasma processing chamber.
35. The method of claim 1 , wherein said set of plasma chamber surfaces is configured to be independently heated.
36. The method of claim 1, wherein said set of plasma chamber surfaces is configured to be independently cooled.
37. The method of claim 1 further comprising independently heating said deposition barrier.
38. The method of claim 1 further comprising independently cooling said deposition barrier.
39. The method of claim 1 further comprising: halting processing of substrates in said plasma processing chamber at least until said deposition barrier is cooled down to a predefined temperature threshold; and cleaning said deposition barrier in-situ after said deposition barrier is cooled at least down to said predefined temperature threshold.
40. The method of claim 1 wherein said deposition barrier is cleaned in-situ by a plasma cleaning process when said deposition barrier has heated up.
41. The method of 1 wherein said deposition barrier is configured to protect a set of gas injectors from said byproduct deposits
42. The method of claim 1, wherein said deposition barrier surface has a pre-determined roughness which facilitates control of adhesion of the depositing material.
43. The method of claim 1 , wherein said deposition barrier surface has a pre-determined surface composition which facilitates control of adhesion of the depositing material.
44. A method of reducing a set of byproduct deposits on a set of plasma chamber surfaces in a plasma reactor, comprising: positioning a substrate in a plasma processing chamber; positioning a deposition barrier in said plasma processing chamber, wherein a first plasma is configured to surround said deposition barrier when struck, and whereby said deposition barrier is configured to make contact with a first subset of said set of byproduct deposits from said substrate; re-positioning said deposition barrier in said plasma processing chamber, wherein a second plasma is configured to surround said deposition barrier when struck, and whereby said deposition barrier is configured to make contact with a second subset of said set of byproduct deposits from said substrate.
45. A deposition barrier arrangement configured to reduce byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber, comprising: a deposition barrier configured to be disposed in a plasma generating region of said plasma processing chamber, said deposition barrier being configured to enable at least some process byproducts produced when a plasma is struck within said plasma processing chamber to adhere to said deposition barrier and thereby reducing said byproduct deposits on said set of plasma chamber surfaces.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007548344A JP2008526026A (en) | 2004-12-22 | 2005-12-16 | Method and structure for reducing byproduct deposition in plasma processing systems |
CN2005800475527A CN101422088B (en) | 2004-12-22 | 2005-12-16 | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/022,982 US7959984B2 (en) | 2004-12-22 | 2004-12-22 | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system |
US11/022,982 | 2004-12-22 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2006081004A2 true WO2006081004A2 (en) | 2006-08-03 |
WO2006081004A3 WO2006081004A3 (en) | 2008-08-14 |
WO2006081004B1 WO2006081004B1 (en) | 2008-10-30 |
Family
ID=36594127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/045729 WO2006081004A2 (en) | 2004-12-22 | 2005-12-16 | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system |
Country Status (6)
Country | Link |
---|---|
US (1) | US7959984B2 (en) |
JP (2) | JP2008526026A (en) |
KR (1) | KR101209534B1 (en) |
CN (1) | CN101422088B (en) |
TW (1) | TWI425882B (en) |
WO (1) | WO2006081004A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014037646A1 (en) * | 2012-09-07 | 2014-03-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for producing a lithium-based electrolyte for a solid microbattery |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060218680A1 (en) * | 2005-03-28 | 2006-09-28 | Bailey Andrew D Iii | Apparatus for servicing a plasma processing system with a robot |
US7319316B2 (en) | 2005-06-29 | 2008-01-15 | Lam Research Corporation | Apparatus for measuring a set of electrical characteristics in a plasma |
US7732009B2 (en) * | 2006-09-26 | 2010-06-08 | United Microelectronics Corp. | Method of cleaning reaction chamber, method of forming protection film and protection wafer |
US8008816B2 (en) * | 2006-10-19 | 2011-08-30 | Boise State University | Device with magnetoplastic and/or magnetoelastic thin-film transducer and pick-up coil for harvesting energy |
DE102007037527B4 (en) * | 2006-11-10 | 2013-05-08 | Schott Ag | Process for coating objects with alternating layers |
WO2008061166A2 (en) * | 2006-11-14 | 2008-05-22 | Boise State University | Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials |
US8586194B2 (en) * | 2007-08-30 | 2013-11-19 | Boise State University | Polycrystalline foams exhibiting giant magnetic-field-induced deformation and methods of making and using same |
WO2009029953A2 (en) * | 2007-08-30 | 2009-03-05 | Boise State University | Magnetic material with large magnetic-field-induced deformation |
US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
US9490106B2 (en) | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
US9293353B2 (en) | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
US9029267B2 (en) | 2013-05-16 | 2015-05-12 | Lam Research Corporation | Controlling temperature of a faraday shield |
CN104302084B (en) * | 2013-07-17 | 2017-04-12 | 朗姆研究公司 | Air cooled faraday shield and methods for using the same |
US9885493B2 (en) | 2013-07-17 | 2018-02-06 | Lam Research Corporation | Air cooled faraday shield and methods for using the same |
US9583369B2 (en) * | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
CN104485272A (en) * | 2014-12-19 | 2015-04-01 | 中国科学院嘉兴微电子仪器与设备工程中心 | Plasma equipment and chamber structure applied to plasma equipment |
RU2019108040A (en) * | 2016-08-31 | 2020-10-01 | Ван Сайнтифик, Инк. Сша | SYSTEMS, DEVICES AND METHODS FOR PRODUCING ELECTRIC ENERGY THROUGH THE CONVERSION OF WATER INTO HYDROGEN AND OXYGEN |
US9773665B1 (en) * | 2016-12-06 | 2017-09-26 | Applied Materials, Inc. | Particle reduction in a physical vapor deposition chamber |
CN113113280B (en) * | 2020-01-09 | 2022-06-10 | 江苏鲁汶仪器有限公司 | Plasma processing system and opening and closing Faraday component thereof |
CN114703464B (en) * | 2022-06-06 | 2022-08-23 | 拓荆科技(北京)有限公司 | Film layer growth equipment and method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
US6380612B1 (en) * | 1996-03-18 | 2002-04-30 | Hyundai Display Technology, Inc. | Thin film formed by inductively coupled plasma |
US6388382B1 (en) * | 1999-03-09 | 2002-05-14 | Hitachi, Ltd. | Plasma processing apparatus and method |
US20020100557A1 (en) * | 2001-01-29 | 2002-08-01 | Applied Materials, Inc. | ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window |
US20020104751A1 (en) * | 1999-11-18 | 2002-08-08 | Drewery John Stephen | Method and apparatus for ionized physical vapor deposition |
WO2003029513A1 (en) * | 2001-09-28 | 2003-04-10 | Tokyo Electron Limited | Hybrid plasma processing apparatus |
US20050014380A1 (en) * | 2003-07-18 | 2005-01-20 | Yoshitaka Kai | Plasma processing method and apparatus |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE440201B (en) * | 1983-12-01 | 1985-07-22 | Asea Ab | INDUSTRIROBOTAR TOOLS |
US4594111A (en) * | 1984-10-04 | 1986-06-10 | Coonan Edmund C | Liquid phase cleaner-solvent |
JPS61172335A (en) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | Plasma processor |
JPS6358834A (en) | 1986-08-27 | 1988-03-14 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | Sputtering apparatus |
JP2555062B2 (en) * | 1987-04-10 | 1996-11-20 | 株式会社日立製作所 | Plasma processing device |
JPH01165120A (en) * | 1987-12-22 | 1989-06-29 | Mitsubishi Electric Corp | Etching device |
JP2926711B2 (en) * | 1988-05-13 | 1999-07-28 | 松下電器産業株式会社 | Dry etching equipment |
JPH0355832A (en) * | 1989-07-25 | 1991-03-11 | Toshiba Corp | Semiconductor production device |
JPH03145124A (en) * | 1989-10-31 | 1991-06-20 | Fujitsu Ltd | Dry etching device |
JP2949874B2 (en) * | 1990-11-21 | 1999-09-20 | 富士電機株式会社 | ECR plasma CVD apparatus dry cleaning method |
JPH081923B2 (en) * | 1991-06-24 | 1996-01-10 | ティーディーケイ株式会社 | Clean transfer method and device |
JP2745895B2 (en) * | 1991-10-04 | 1998-04-28 | 住友金属工業株式会社 | Plasma equipment |
JPH06272027A (en) * | 1993-03-17 | 1994-09-27 | Fuji Photo Film Co Ltd | Method for automatically cleaning vacuum deposition tank and device therefor |
US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
TW327236B (en) * | 1996-03-12 | 1998-02-21 | Varian Associates | Inductively coupled plasma reactor with faraday-sputter shield |
US6135697A (en) * | 1997-01-30 | 2000-10-24 | Siemens Electrocom, L.P. | Transfer of cartridges containing flat articles |
US6139697A (en) * | 1997-01-31 | 2000-10-31 | Applied Materials, Inc. | Low temperature integrated via and trench fill process and apparatus |
JP3423186B2 (en) * | 1997-04-09 | 2003-07-07 | 東京エレクトロン株式会社 | Processing method |
WO1998048444A1 (en) * | 1997-04-21 | 1998-10-29 | Tokyo Electron Arizona, Inc. | Method and apparatus for ionized sputtering of materials |
JP3468446B2 (en) * | 1997-05-20 | 2003-11-17 | 東京エレクトロン株式会社 | Plasma processing equipment |
US6521081B2 (en) * | 1997-12-05 | 2003-02-18 | Tegal Corporation | Deposition shield for a plasma reactor |
US6120660A (en) * | 1998-02-11 | 2000-09-19 | Silicon Genesis Corporation | Removable liner design for plasma immersion ion implantation |
US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
EP1147544A2 (en) * | 1998-09-22 | 2001-10-24 | Applied Materials, Inc. | Rf plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
US6364954B2 (en) * | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
US6372301B1 (en) * | 1998-12-22 | 2002-04-16 | Applied Materials, Inc. | Method of improving adhesion of diffusion layers on fluorinated silicon dioxide |
JP2000200754A (en) * | 1999-01-06 | 2000-07-18 | Matsushita Electric Ind Co Ltd | Method and apparatus for vacuum processing |
JP3639868B2 (en) * | 1999-06-29 | 2005-04-20 | 株式会社東北テクノアーチ | Method and apparatus for processing fine particle dust in plasma |
US6306008B1 (en) * | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
JP2001246331A (en) * | 2000-03-08 | 2001-09-11 | Sharp Corp | Cleaning device |
EP1334514A2 (en) * | 2000-11-01 | 2003-08-13 | Applied Materials, Inc. | Dielectric etch chamber with expanded process window |
DE10110373C2 (en) * | 2001-03-03 | 2003-03-06 | Wolfgang Daum | Method and device for cleaning the interior of automobiles |
US7451941B2 (en) * | 2001-03-13 | 2008-11-18 | Jackson David P | Dense fluid spray cleaning process and apparatus |
US6830622B2 (en) * | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
JP2002313732A (en) * | 2001-04-11 | 2002-10-25 | Seiko Epson Corp | Plasma equipment |
KR100420171B1 (en) * | 2001-08-07 | 2004-03-02 | 삼성광주전자 주식회사 | Robot cleaner and system therewith and method of driving thereof |
US6537919B1 (en) * | 2001-12-19 | 2003-03-25 | Taiwan Semiconductor Manufacturing Company | Process to remove micro-scratches |
JP3983557B2 (en) * | 2002-01-29 | 2007-09-26 | 富士通株式会社 | Inductively coupled plasma processing equipment |
TW527647B (en) * | 2002-02-06 | 2003-04-11 | Jusung Eng Co Ltd | Thin film deposition method |
JP4220173B2 (en) * | 2002-03-26 | 2009-02-04 | 株式会社日立ハイテクノロジーズ | Substrate transport method |
JP4054208B2 (en) * | 2002-04-01 | 2008-02-27 | 富士通株式会社 | Contactor manufacturing method |
JP2003311555A (en) * | 2002-04-25 | 2003-11-05 | Okuma Corp | Screwing apparatus |
US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
CN1235539C (en) * | 2002-11-01 | 2006-01-11 | 三星电子株式会社 | Dishwasher and its control method |
US7434601B2 (en) * | 2002-12-23 | 2008-10-14 | Catalyst Services, Inc. | Cleaning and/or inspecting robot for hazardous environments including catalyst removal |
JP2004228102A (en) * | 2003-01-09 | 2004-08-12 | Hitachi Kokusai Electric Inc | Plasma treatment apparatus |
JP3935850B2 (en) * | 2003-01-31 | 2007-06-27 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP4363863B2 (en) * | 2003-02-06 | 2009-11-11 | 株式会社日立ハイテクノロジーズ | Process control method in semiconductor processing apparatus |
US7241397B2 (en) * | 2004-03-30 | 2007-07-10 | Tokyo Electron Limited | Honeycomb optical window deposition shield and method for a plasma processing system |
US20050241669A1 (en) * | 2004-04-29 | 2005-11-03 | Tokyo Electron Limited | Method and system of dry cleaning a processing chamber |
JP2004274076A (en) * | 2004-05-13 | 2004-09-30 | Matsushita Electric Ind Co Ltd | Method for manufacturing semiconductor device and manufacturing apparatus thereof |
US7578945B2 (en) * | 2004-09-27 | 2009-08-25 | Lam Research Corporation | Method and apparatus for tuning a set of plasma processing steps |
US20060218680A1 (en) | 2005-03-28 | 2006-09-28 | Bailey Andrew D Iii | Apparatus for servicing a plasma processing system with a robot |
-
2004
- 2004-12-22 US US11/022,982 patent/US7959984B2/en active Active
-
2005
- 2005-12-16 WO PCT/US2005/045729 patent/WO2006081004A2/en active Application Filing
- 2005-12-16 KR KR1020077014360A patent/KR101209534B1/en active IP Right Grant
- 2005-12-16 CN CN2005800475527A patent/CN101422088B/en active Active
- 2005-12-16 JP JP2007548344A patent/JP2008526026A/en active Pending
- 2005-12-22 TW TW094145878A patent/TWI425882B/en active
-
2013
- 2013-02-06 JP JP2013021059A patent/JP5726928B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
US6380612B1 (en) * | 1996-03-18 | 2002-04-30 | Hyundai Display Technology, Inc. | Thin film formed by inductively coupled plasma |
US6388382B1 (en) * | 1999-03-09 | 2002-05-14 | Hitachi, Ltd. | Plasma processing apparatus and method |
US20020104751A1 (en) * | 1999-11-18 | 2002-08-08 | Drewery John Stephen | Method and apparatus for ionized physical vapor deposition |
US20020100557A1 (en) * | 2001-01-29 | 2002-08-01 | Applied Materials, Inc. | ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window |
WO2003029513A1 (en) * | 2001-09-28 | 2003-04-10 | Tokyo Electron Limited | Hybrid plasma processing apparatus |
US20050014380A1 (en) * | 2003-07-18 | 2005-01-20 | Yoshitaka Kai | Plasma processing method and apparatus |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014037646A1 (en) * | 2012-09-07 | 2014-03-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for producing a lithium-based electrolyte for a solid microbattery |
FR2995454A1 (en) * | 2012-09-07 | 2014-03-14 | Commissariat Energie Atomique | PROCESS FOR PRODUCING LITHIUM ELECTROLYTE FOR SOLID MICRO-BATTERY |
US9722278B2 (en) | 2012-09-07 | 2017-08-01 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for producing a lithium-based electrolyte for a solid microbattery |
Also Published As
Publication number | Publication date |
---|---|
CN101422088A (en) | 2009-04-29 |
JP2008526026A (en) | 2008-07-17 |
WO2006081004B1 (en) | 2008-10-30 |
TW200635446A (en) | 2006-10-01 |
US20060130758A1 (en) | 2006-06-22 |
CN101422088B (en) | 2012-02-01 |
JP2013102221A (en) | 2013-05-23 |
KR20070086605A (en) | 2007-08-27 |
JP5726928B2 (en) | 2015-06-03 |
WO2006081004A3 (en) | 2008-08-14 |
KR101209534B1 (en) | 2012-12-07 |
TWI425882B (en) | 2014-02-01 |
US7959984B2 (en) | 2011-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2006081004A2 (en) | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system | |
JP2008526026A5 (en) | ||
KR101164829B1 (en) | Methods and apparatus for tuning a set of plasma processing steps | |
EP0825278B1 (en) | Method for reducing contaminant concentration in plasma chambers | |
US8287650B2 (en) | Low sloped edge ring for plasma processing chamber | |
KR101441720B1 (en) | Edge electrodes with dielectric covers | |
KR101903831B1 (en) | Plasma processing apparatus and plasma processing method | |
TWI713683B (en) | Plasma processing method | |
US20060042755A1 (en) | Large surface area dry etcher | |
US20100140221A1 (en) | Plasma etching apparatus and plasma cleaning method | |
KR100955144B1 (en) | Plasma doping method and apparatus | |
US20210319989A1 (en) | Methods and apparatus for processing a substrate | |
KR200475462Y1 (en) | Replaceable upper chamber section of plasma processing apparatus | |
US7578945B2 (en) | Method and apparatus for tuning a set of plasma processing steps | |
US7488689B2 (en) | Plasma etching method | |
US20180345330A1 (en) | Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor | |
US11898236B2 (en) | Methods and apparatus for processing a substrate | |
US20010049196A1 (en) | Apparatus for improving etch uniformity and methods therefor | |
JP4676222B2 (en) | Plasma processing equipment | |
JP3116390B2 (en) | Semiconductor processing apparatus and semiconductor processing method | |
WO2023086165A1 (en) | Coated part for capacitively coupled chamber | |
KR20220156674A (en) | Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor | |
WO2018226323A1 (en) | Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200580047552.7 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2007548344 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020077014360 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 05857109 Country of ref document: EP Kind code of ref document: A2 |