WO2006083909A3 - Method of making substitutionally carbon-highly doped crystalline si-layers by cvd - Google Patents

Method of making substitutionally carbon-highly doped crystalline si-layers by cvd Download PDF

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Publication number
WO2006083909A3
WO2006083909A3 PCT/US2006/003465 US2006003465W WO2006083909A3 WO 2006083909 A3 WO2006083909 A3 WO 2006083909A3 US 2006003465 W US2006003465 W US 2006003465W WO 2006083909 A3 WO2006083909 A3 WO 2006083909A3
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WIPO (PCT)
Prior art keywords
making
carbon
substitutionally
cvd
layers
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PCT/US2006/003465
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French (fr)
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WO2006083909A2 (en
Inventor
Matthias Bauer
Keith Doran Weeks
Pierre Tomasini
Nyles Cody
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Asm Inc
Matthias Bauer
Keith Doran Weeks
Pierre Tomasini
Nyles Cody
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Application filed by Asm Inc, Matthias Bauer, Keith Doran Weeks, Pierre Tomasini, Nyles Cody filed Critical Asm Inc
Priority to EP06720025A priority Critical patent/EP1846596A2/en
Priority to JP2007554171A priority patent/JP5571287B2/en
Publication of WO2006083909A2 publication Critical patent/WO2006083909A2/en
Publication of WO2006083909A3 publication Critical patent/WO2006083909A3/en

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    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar

Abstract

Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
PCT/US2006/003465 2005-02-04 2006-01-31 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd WO2006083909A2 (en)

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