WO2006104670A3 - Treatment of a dielectric layer using supercritical co2 - Google Patents

Treatment of a dielectric layer using supercritical co2 Download PDF

Info

Publication number
WO2006104670A3
WO2006104670A3 PCT/US2006/008733 US2006008733W WO2006104670A3 WO 2006104670 A3 WO2006104670 A3 WO 2006104670A3 US 2006008733 W US2006008733 W US 2006008733W WO 2006104670 A3 WO2006104670 A3 WO 2006104670A3
Authority
WO
WIPO (PCT)
Prior art keywords
supercritical
treatment
dielectric layer
carbon dioxide
silylating agent
Prior art date
Application number
PCT/US2006/008733
Other languages
French (fr)
Other versions
WO2006104670A2 (en
Inventor
Gunilla Jacobson
Deborah Yellowaga
Original Assignee
Supercritical Systems Inc
Gunilla Jacobson
Deborah Yellowaga
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Supercritical Systems Inc, Gunilla Jacobson, Deborah Yellowaga filed Critical Supercritical Systems Inc
Priority to JP2008504078A priority Critical patent/JP2008535249A/en
Publication of WO2006104670A2 publication Critical patent/WO2006104670A2/en
Publication of WO2006104670A3 publication Critical patent/WO2006104670A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02101—Cleaning only involving supercritical fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31629—Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas

Abstract

A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS) and combinations thereof. In accordance with further embodiments of the invention, a post ash substrate comprising a dielectric material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.
PCT/US2006/008733 2005-03-28 2006-03-07 Treatment of a dielectric layer using supercritical co2 WO2006104670A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008504078A JP2008535249A (en) 2005-03-28 2006-03-07 Dielectric layer processing method using supercritical CO2

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/092,031 US7387868B2 (en) 2002-03-04 2005-03-28 Treatment of a dielectric layer using supercritical CO2
US11/092,031 2005-03-28

Publications (2)

Publication Number Publication Date
WO2006104670A2 WO2006104670A2 (en) 2006-10-05
WO2006104670A3 true WO2006104670A3 (en) 2007-11-01

Family

ID=37053869

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/008733 WO2006104670A2 (en) 2005-03-28 2006-03-07 Treatment of a dielectric layer using supercritical co2

Country Status (3)

Country Link
US (1) US7387868B2 (en)
JP (1) JP2008535249A (en)
WO (1) WO2006104670A2 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003064065A1 (en) * 2002-01-25 2003-08-07 Supercritical Systems Inc. Method for reducing the formation of contaminants during supercritical carbon dioxide processes
AU2003220039A1 (en) * 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
US20050227187A1 (en) * 2002-03-04 2005-10-13 Supercritical Systems Inc. Ionic fluid in supercritical fluid for semiconductor processing
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US20050022850A1 (en) * 2003-07-29 2005-02-03 Supercritical Systems, Inc. Regulation of flow of processing chemistry only into a processing chamber
US20060102282A1 (en) * 2004-11-15 2006-05-18 Supercritical Systems, Inc. Method and apparatus for selectively filtering residue from a processing chamber
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
US20060185694A1 (en) * 2005-02-23 2006-08-24 Richard Brown Rinsing step in supercritical processing
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
US20060225769A1 (en) * 2005-03-30 2006-10-12 Gentaro Goshi Isothermal control of a process chamber
US7442636B2 (en) * 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US20060223899A1 (en) * 2005-03-30 2006-10-05 Hillman Joseph T Removal of porogens and porogen residues using supercritical CO2
US20070000519A1 (en) * 2005-06-30 2007-01-04 Gunilla Jacobson Removal of residues for low-k dielectric materials in wafer processing
JP5019741B2 (en) * 2005-11-30 2012-09-05 東京エレクトロン株式会社 Semiconductor device manufacturing method and substrate processing system
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
KR100829923B1 (en) * 2006-08-30 2008-05-16 세메스 주식회사 Spin head and method using the same for treating substrate
US7500397B2 (en) * 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
JP4977508B2 (en) * 2007-03-26 2012-07-18 アイメック Method for processing damaged porous dielectric
US9620410B1 (en) * 2009-01-20 2017-04-11 Lam Research Corporation Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process
WO2010102013A2 (en) 2009-03-03 2010-09-10 Akrion Systems Llc Method for selective under-etching of porous silicon
JP5261291B2 (en) * 2009-06-01 2013-08-14 東京エレクトロン株式会社 Processing method and storage medium
JP5663160B2 (en) * 2009-09-28 2015-02-04 東京応化工業株式会社 Surface treatment agent and surface treatment method
US9761449B2 (en) * 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
CN111630639A (en) 2018-01-30 2020-09-04 东京毅力科创株式会社 Substrate processing method, substrate processing apparatus, and etching solution
US10297510B1 (en) * 2018-04-25 2019-05-21 Internationel Business Machines Corporation Sidewall image transfer process for multiple gate width patterning
KR20200015279A (en) 2018-08-03 2020-02-12 삼성전자주식회사 Method for forming nanocrystalline graphene and device including the same
JP7197396B2 (en) * 2019-02-06 2022-12-27 東京エレクトロン株式会社 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
JP7394563B2 (en) * 2019-09-12 2023-12-08 東京エレクトロン株式会社 Cleaning method for substrate processing equipment and substrate processing system
US11640115B2 (en) * 2020-09-04 2023-05-02 Samsung Electronics Co., Ltd. Substrate processing apparatus, semiconductor manufacturing equipment, and substrate processing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030008155A1 (en) * 2001-06-11 2003-01-09 Jsr Corporation Method for the formation of silica film, silica film, insulating film, and semiconductor device
US20030036023A1 (en) * 2000-12-12 2003-02-20 Moreau Wayne M. Supercritical fluid(SCF) silylation process
US20040175958A1 (en) * 2003-03-07 2004-09-09 Taiwan Semiconductor Manufacturing Company Novel application of a supercritical CO2 system for curing low k dielectric materials

Family Cites Families (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2439689A (en) * 1948-04-13 Method of rendering glass
US2625886A (en) * 1947-08-21 1953-01-20 American Brake Shoe Co Pump
US2617719A (en) * 1950-12-29 1952-11-11 Stanolind Oil & Gas Co Cleaning porous media
US2873597A (en) * 1955-08-08 1959-02-17 Victor T Fahringer Apparatus for sealing a pressure vessel
US2993449A (en) * 1959-03-09 1961-07-25 Hydratomic Engineering Corp Motor-pump
US3135211A (en) * 1960-09-28 1964-06-02 Integral Motor Pump Corp Motor and pump assembly
US3521765A (en) * 1967-10-31 1970-07-28 Western Electric Co Closed-end machine for processing articles in a controlled atmosphere
US3681171A (en) * 1968-08-23 1972-08-01 Hitachi Ltd Apparatus for producing a multilayer printed circuit plate assembly
DE1965723B2 (en) * 1969-01-06 1972-12-07 The Hobart Mfg Co , Troy, Ohio (V St A) HYDRAULIC CONTROL DEVICE FOR WASHING MACHINES
US3623627A (en) * 1969-08-22 1971-11-30 Hunt Co Rodney Door construction for a pressure vessel
US3642020A (en) * 1969-11-17 1972-02-15 Cameron Iron Works Inc Pressure operated{13 positive displacement shuttle valve
US3744660A (en) * 1970-12-30 1973-07-10 Combustion Eng Shield for nuclear reactor vessel
GB1392822A (en) * 1971-03-02 1975-04-30 Comitato Nazionale Per Lenergi Extraction of metals from solutions
US3890176A (en) * 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US3968885A (en) * 1973-06-29 1976-07-13 International Business Machines Corporation Method and apparatus for handling workpieces
US4341592A (en) * 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4029517A (en) * 1976-03-01 1977-06-14 Autosonics Inc. Vapor degreasing system having a divider wall between upper and lower vapor zone portions
US4091643A (en) * 1976-05-14 1978-05-30 Ama Universal S.P.A. Circuit for the recovery of solvent vapor evolved in the course of a cleaning cycle in dry-cleaning machines or plants, and for the de-pressurizing of such machines
GB1594935A (en) * 1976-11-01 1981-08-05 Gen Descaling Co Ltd Closure for pipe or pressure vessel and seal therefor
US4145161A (en) * 1977-08-10 1979-03-20 Standard Oil Company (Indiana) Speed control
JPS5448172A (en) * 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
US4219333A (en) * 1978-07-03 1980-08-26 Harris Robert D Carbonated cleaning solution
US4349415A (en) * 1979-09-28 1982-09-14 Critical Fluid Systems, Inc. Process for separating organic liquid solutes from their solvent mixtures
US4367140A (en) * 1979-11-05 1983-01-04 Sykes Ocean Water Ltd. Reverse osmosis liquid purification apparatus
DE3110341C2 (en) * 1980-03-19 1983-11-17 Hitachi, Ltd., Tokyo Method and apparatus for aligning a thin substrate in the image plane of a copier
US4355937A (en) * 1980-12-24 1982-10-26 International Business Machines Corporation Low shock transmissive antechamber seal mechanisms for vacuum chamber type semi-conductor wafer electron beam writing apparatus
US4316750A (en) * 1981-01-16 1982-02-23 Western Electric Company, Inc. Apparatus and method for cleaning a flux station of a soldering system
DE3112434A1 (en) * 1981-03-28 1982-10-07 Depa GmbH, 4000 Düsseldorf PNEUMATIC DIAPHRAGM PUMP
US4682937A (en) * 1981-11-12 1987-07-28 The Coca-Cola Company Double-acting diaphragm pump and reversing mechanism therefor
DE3145815C2 (en) * 1981-11-19 1984-08-09 AGA Gas GmbH, 2102 Hamburg Process for removing peelable layers of material from coated objects,
US4522788A (en) * 1982-03-05 1985-06-11 Leco Corporation Proximate analyzer
US4426388A (en) * 1982-04-02 1984-01-17 Merck & Co., Inc. 5-Benzothiazolesulfonamide derivatives for the topical treatment of elevated intraocular pressure
US4426358A (en) 1982-04-28 1984-01-17 Johansson Arne I Fail-safe device for a lid of a pressure vessel
DE3238768A1 (en) 1982-10-20 1984-04-26 Kurt Wolf & Co Kg, 7547 Wildbad COOKING VESSEL FROM COOKER AND LID, ESPECIALLY STEAM PRESSURE COOKER
FR2536433A1 (en) * 1982-11-19 1984-05-25 Privat Michel METHOD AND APPARATUS FOR CLEANING AND DECONTAMINATING PARTICULARLY CLOTHING, ESPECIALLY CLOTHES CONTAMINATED WITH RADIOACTIVE PARTICLES
US4626509A (en) * 1983-07-11 1986-12-02 Data Packaging Corp. Culture media transfer assembly
US4865061A (en) * 1983-07-22 1989-09-12 Quadrex Hps, Inc. Decontamination apparatus for chemically and/or radioactively contaminated tools and equipment
US4549467A (en) * 1983-08-03 1985-10-29 Wilden Pump & Engineering Co. Actuator valve
US4475993A (en) * 1983-08-15 1984-10-09 The United States Of America As Represented By The United States Department Of Energy Extraction of trace metals from fly ash
GB8332394D0 (en) * 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
US4877530A (en) * 1984-04-25 1989-10-31 Cf Systems Corporation Liquid CO2 /cosolvent extraction
US4960140A (en) 1984-11-30 1990-10-02 Ishijima Industrial Co., Ltd. Washing arrangement for and method of washing lead frames
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4618769A (en) * 1985-01-04 1986-10-21 The United States Of America As Represented By The United States Department Of Energy Liquid chromatography/Fourier transform IR spectrometry interface flow cell
US4788043A (en) * 1985-04-17 1988-11-29 Tokuyama Soda Kabushiki Kaisha Process for washing semiconductor substrate with organic solvent
US4778356A (en) * 1985-06-11 1988-10-18 Hicks Cecil T Diaphragm pump
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4925790A (en) 1985-08-30 1990-05-15 The Regents Of The University Of California Method of producing products by enzyme-catalyzed reactions in supercritical fluids
US5044871A (en) 1985-10-24 1991-09-03 Texas Instruments Incorporated Integrated circuit processing system
US4827867A (en) * 1985-11-28 1989-05-09 Daikin Industries, Ltd. Resist developing apparatus
US4670126A (en) * 1986-04-28 1987-06-02 Varian Associates, Inc. Sputter module for modular wafer processing system
US4917556A (en) * 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
US4730630A (en) * 1986-10-27 1988-03-15 White Consolidated Industries, Inc. Dishwasher with power filtered rinse
JPS63157870A (en) * 1986-12-19 1988-06-30 Anelva Corp Substrate treatment device
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
DE3861050D1 (en) * 1987-05-07 1990-12-20 Micafil Ag METHOD AND DEVICE FOR EXTRACTING OIL OR POLYCHLORIZED BIPHENYL FROM IMPREGNATED ELECTRICAL PARTS BY MEANS OF A SOLVENT AND DISTILLING THE SOLVENT.
US4924892A (en) 1987-07-28 1990-05-15 Mazda Motor Corporation Painting truck washing system
DE3725565A1 (en) 1987-08-01 1989-02-16 Peter Weil METHOD AND SYSTEM FOR DE-PAINTING OBJECTS WITH A SUBMERSIBLE CONTAINER WITH SOLVENT
US5105556A (en) 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US4838476A (en) * 1987-11-12 1989-06-13 Fluocon Technologies Inc. Vapour phase treatment process and apparatus
US4933404A (en) 1987-11-27 1990-06-12 Battelle Memorial Institute Processes for microemulsion polymerization employing novel microemulsion systems
US4789077A (en) * 1988-02-24 1988-12-06 Public Service Electric & Gas Company Closure apparatus for a high pressure vessel
JP2663483B2 (en) 1988-02-29 1997-10-15 勝 西川 Method of forming resist pattern
US4823976A (en) * 1988-05-04 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Quick actuating closure
US5224504A (en) 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5185296A (en) 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
US5013366A (en) 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5051135A (en) 1989-01-30 1991-09-24 Kabushiki Kaisha Tiyoda Seisakusho Cleaning method using a solvent while preventing discharge of solvent vapors to the environment
US4879431A (en) * 1989-03-09 1989-11-07 Biomedical Research And Development Laboratories, Inc. Tubeless cell harvester
US5213485A (en) 1989-03-10 1993-05-25 Wilden James K Air driven double diaphragm pump
US5169296A (en) 1989-03-10 1992-12-08 Wilden James K Air driven double diaphragm pump
US5068040A (en) 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
DE3914065A1 (en) 1989-04-28 1990-10-31 Leybold Ag DEVICE FOR CARRYING OUT PLASMA ETCHING PROCESSES
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4923828A (en) 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
JP2888253B2 (en) 1989-07-20 1999-05-10 富士通株式会社 Chemical vapor deposition and apparatus for its implementation
US5062770A (en) 1989-08-11 1991-11-05 Systems Chemistry, Inc. Fluid pumping apparatus and system with leak detection and containment
US4983223A (en) 1989-10-24 1991-01-08 Chenpatents Apparatus and method for reducing solvent vapor losses
US5213619A (en) 1989-11-30 1993-05-25 Jackson David P Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids
US5196134A (en) 1989-12-20 1993-03-23 Hughes Aircraft Company Peroxide composition for removing organic contaminants and method of using same
US5169408A (en) 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
US5186594A (en) 1990-04-19 1993-02-16 Applied Materials, Inc. Dual cassette load lock
US5217043A (en) 1990-04-19 1993-06-08 Milic Novakovic Control valve
DE4018464A1 (en) 1990-06-08 1991-12-12 Ott Kg Lewa DIAPHRAGM FOR A HYDRAULICALLY DRIVED DIAPHRAGM PUMP
US5071485A (en) 1990-09-11 1991-12-10 Fusion Systems Corporation Method for photoresist stripping using reverse flow
DE69131878T2 (en) * 1990-09-21 2000-07-20 Dainippon Printing Co Ltd Process for producing a phase shift photomask
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
DE4106180A1 (en) 1990-10-08 1992-04-09 Dirk Dipl Ing Budde DOUBLE DIAPHRAGM PUMP
US5143103A (en) 1991-01-04 1992-09-01 International Business Machines Corporation Apparatus for cleaning and drying workpieces
US5185058A (en) 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
US5201960A (en) 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
CH684402A5 (en) 1991-03-04 1994-09-15 Xorella Ag Wettingen Device for sliding and pivoting of a container-closure.
US5195878A (en) 1991-05-20 1993-03-23 Hytec Flow Systems Air-operated high-temperature corrosive liquid pump
US5225173A (en) 1991-06-12 1993-07-06 Idaho Research Foundation, Inc. Methods and devices for the separation of radioactive rare earth metal isotopes from their alkaline earth metal precursors
US5197800A (en) * 1991-06-28 1993-03-30 Nordson Corporation Method for forming coating material formulations substantially comprised of a saturated resin rich phase
US5242641A (en) * 1991-07-15 1993-09-07 Pacific Trinetics Corporation Method for forming filled holes in multi-layer integrated circuit packages
US5174917A (en) 1991-07-19 1992-12-29 Monsanto Company Compositions containing n-ethyl hydroxamic acid chelants
US5221019A (en) 1991-11-07 1993-06-22 Hahn & Clay Remotely operable vessel cover positioner
US5190373A (en) 1991-12-24 1993-03-02 Union Carbide Chemicals & Plastics Technology Corporation Method, apparatus, and article for forming a heated, pressurized mixture of fluids
KR0170421B1 (en) * 1992-04-16 1999-03-30 이노우에 아키라 Spindrier
KR940009563B1 (en) * 1992-09-04 1994-10-15 대우전자주식회사 Tableware washing machine
JP3259380B2 (en) * 1992-12-04 2002-02-25 ソニー株式会社 Method for manufacturing semiconductor device
JP3356480B2 (en) * 1993-03-18 2002-12-16 株式会社日本触媒 Leakless pump
US5434107A (en) * 1994-01-28 1995-07-18 Texas Instruments Incorporated Method for planarization
US6262510B1 (en) * 1994-09-22 2001-07-17 Iancu Lungu Electronically switched reluctance motor
US5783495A (en) * 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
JP3415373B2 (en) * 1995-11-29 2003-06-09 東芝マイクロエレクトロニクス株式会社 Method and apparatus for dissolving a surface layer such as a semiconductor substrate
US6103638A (en) * 1997-11-07 2000-08-15 Micron Technology, Inc. Formation of planar dielectric layers using liquid interfaces
KR100524204B1 (en) * 1998-01-07 2006-01-27 동경 엘렉트론 주식회사 Gas processor
US6085762A (en) * 1998-03-30 2000-07-11 The Regents Of The University Of California Apparatus and method for providing pulsed fluids
US6642140B1 (en) * 1998-09-03 2003-11-04 Micron Technology, Inc. System for filling openings in semiconductor products
JP2000265945A (en) * 1998-11-10 2000-09-26 Uct Kk Chemical supplying pump, chemical supplying device, chemical supplying system, substrate cleaning device, chemical supplying method, and substrate cleaning method
US7044143B2 (en) * 1999-05-14 2006-05-16 Micell Technologies, Inc. Detergent injection systems and methods for carbon dioxide microelectronic substrate processing systems
US6508259B1 (en) * 1999-08-05 2003-01-21 S.C. Fluids, Inc. Inverted pressure vessel with horizontal through loading
US6602349B2 (en) * 1999-08-05 2003-08-05 S.C. Fluids, Inc. Supercritical fluid cleaning process for precision surfaces
US6712081B1 (en) * 1999-08-31 2004-03-30 Kobe Steel, Ltd. Pressure processing device
US6858089B2 (en) * 1999-10-29 2005-02-22 Paul P. Castrucci Apparatus and method for semiconductor wafer cleaning
JP4014127B2 (en) * 2000-10-04 2007-11-28 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
US6905555B2 (en) * 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes
JP2002367984A (en) * 2001-06-11 2002-12-20 Jsr Corp Formation method of silica film, silica film, insulating film, and semiconductor device
US6848458B1 (en) * 2002-02-05 2005-02-01 Novellus Systems, Inc. Apparatus and methods for processing semiconductor substrates using supercritical fluids
AU2003220039A1 (en) * 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
JP2003282698A (en) * 2002-03-22 2003-10-03 Sony Corp Method for fabricating semiconductor and the same
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US6669785B2 (en) * 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US20040050406A1 (en) * 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical
US20040118812A1 (en) * 2002-08-09 2004-06-24 Watkins James J. Etch method using supercritical fluids
US20040048194A1 (en) * 2002-09-11 2004-03-11 International Business Machines Corporation Mehod for forming a tunable deep-ultraviolet dielectric antireflection layer for image transfer processing
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US6929901B2 (en) * 2002-12-18 2005-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reworking a lithographic process to provide an undamaged and residue free arc layer
US20040168709A1 (en) * 2003-02-27 2004-09-02 Drumm James M. Process control, monitoring and end point detection for semiconductor wafers processed with supercritical fluids
US6875285B2 (en) * 2003-04-24 2005-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for dampening high pressure impact on porous materials
US6857437B2 (en) * 2003-06-18 2005-02-22 Ekc Technology, Inc. Automated dense phase fluid cleaning system
US7250374B2 (en) * 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US20060102204A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for removing a residue from a substrate using supercritical carbon dioxide processing
US20060102208A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited System for removing a residue from a substrate using supercritical carbon dioxide processing
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030036023A1 (en) * 2000-12-12 2003-02-20 Moreau Wayne M. Supercritical fluid(SCF) silylation process
US20030008155A1 (en) * 2001-06-11 2003-01-09 Jsr Corporation Method for the formation of silica film, silica film, insulating film, and semiconductor device
US20040175958A1 (en) * 2003-03-07 2004-09-09 Taiwan Semiconductor Manufacturing Company Novel application of a supercritical CO2 system for curing low k dielectric materials

Also Published As

Publication number Publication date
WO2006104670A2 (en) 2006-10-05
US7387868B2 (en) 2008-06-17
US20050191865A1 (en) 2005-09-01
JP2008535249A (en) 2008-08-28

Similar Documents

Publication Publication Date Title
WO2006104670A3 (en) Treatment of a dielectric layer using supercritical co2
IL211336A0 (en) Oxygen scavenger for low moisture environment and methods of using the same
TWI369245B (en) Method of making vapour deposited oxygen-scavenging particles
IL181543A0 (en) Dendrimer based compositions and methods of using the same
EP1812065A4 (en) High affinity antibodies against hmgb1 and methods of use thereof
ZA200704777B (en) Method for the coating of metallic surfaces with an aqueous composition comprising silanes silanols siloxanes and polysiloxanes and said composition
WO2006017538A3 (en) Hk1-binding proteins
AU2003291502A8 (en) Adaptive broadband platforms and methods of operation
AU2002355727A1 (en) Multi-layer composites formed from compositions having improved adhesion, coating compositions, and methods related thereto
TW200617121A (en) Coating formulation for improving surface properties
EP1921118A4 (en) Strippable floor coating and method of forming the coating
EP1819976A4 (en) Integrated acid gas and sour gas reinjection process
EP1726043A4 (en) Self-aligned silicon carbide semiconductor devices and methods of making the same
ZA200704767B (en) Stabilized individually coated ramipril particles, compositions and methods
EP1657708A4 (en) Sound insulation/absorption structure, and structure having these applied thereto
EP1792598A4 (en) Specular-gloss nail enamels
EP1928490A4 (en) Compositions and methods of using chondroitinase abci mutants
HK1121987A1 (en) Highly porous coated fine particles, composition, and method of production
EP1673801A4 (en) Developer-soluble materials and methods of using the same in via-first dual damascene applications
AU2003290605A8 (en) Compositions and methods for the diagnosis and treatment of sepsis
AUPS017702A0 (en) Methods and compositions for the treatment of asthma and related disorders
AU2003214655A1 (en) The method of chemical surface modification of polytetrafluoroethylene materials
SG130006A1 (en) Method of improving the frictional properties of functional fluids
AU2003263301A8 (en) Alternative processes for the preparation of d- (+) -morphine, and d- (+) - morphine tartrate
EP1968998A4 (en) Affinity optimized epha2 agonistic antibodies and methods of use thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
ENP Entry into the national phase

Ref document number: 2008504078

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 06737866

Country of ref document: EP

Kind code of ref document: A2