WO2006107545A3 - Method for forming a barrier/seed layer for copper metallization - Google Patents
Method for forming a barrier/seed layer for copper metallization Download PDFInfo
- Publication number
- WO2006107545A3 WO2006107545A3 PCT/US2006/009219 US2006009219W WO2006107545A3 WO 2006107545 A3 WO2006107545 A3 WO 2006107545A3 US 2006009219 W US2006009219 W US 2006009219W WO 2006107545 A3 WO2006107545 A3 WO 2006107545A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- forming
- seed layer
- substrate
- barrier
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
Abstract
A method (400) for improving adhesion of Cu to a Ru layer (650a, 650b) in Cu metallization. The method (400) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1 , 100), depositing a Ru layer (650a, 650b) on the substrate (25, 125) in a chemical vapor deposition process, and forming a Cu seed layer (660a, 660b) on the Ru layer (650a, 650b) to prevent oxidation of the Ru layer (650a, 650b). The Cu seed layer (660a, 660b) is partially or completely oxidized prior to performing a Cu bulk plating process on the substrate (25, 125). The oxidized portion (660a, 667) of the Cu seed layer (660a, 660b) is substantially dissolved and removed from the substrate (25, 125) during interaction with a Cu plating solution, thereby forming a bulk Cu layer (670a, 670b) with good adhesion to the underlying Ru layer (650a, 650b).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/096,095 | 2005-03-31 | ||
US11/096,095 US7288479B2 (en) | 2005-03-31 | 2005-03-31 | Method for forming a barrier/seed layer for copper metallization |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006107545A2 WO2006107545A2 (en) | 2006-10-12 |
WO2006107545A3 true WO2006107545A3 (en) | 2006-12-07 |
Family
ID=36922247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/009219 WO2006107545A2 (en) | 2005-03-31 | 2006-03-14 | Method for forming a barrier/seed layer for copper metallization |
Country Status (3)
Country | Link |
---|---|
US (1) | US7288479B2 (en) |
TW (1) | TWI313910B (en) |
WO (1) | WO2006107545A2 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7294851B2 (en) * | 2004-11-03 | 2007-11-13 | Infineon Technologies Ag | Dense seed layer and method of formation |
CN101365821B (en) * | 2006-02-08 | 2011-10-05 | Jsr株式会社 | Method for depositing metallic film |
US7473634B2 (en) * | 2006-09-28 | 2009-01-06 | Tokyo Electron Limited | Method for integrated substrate processing in copper metallization |
DE102006062032A1 (en) * | 2006-12-29 | 2008-07-03 | Advanced Micro Devices, Inc., Sunnyvale | Method for protection of metal layer from external contamination, involves forming seed layer for connecting line structure in substrate of microstructure component |
US7829454B2 (en) * | 2007-09-11 | 2010-11-09 | Tokyo Electron Limited | Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device |
US7704879B2 (en) * | 2007-09-27 | 2010-04-27 | Tokyo Electron Limited | Method of forming low-resistivity recessed features in copper metallization |
US7884012B2 (en) * | 2007-09-28 | 2011-02-08 | Tokyo Electron Limited | Void-free copper filling of recessed features for semiconductor devices |
US7776740B2 (en) * | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
US8247030B2 (en) * | 2008-03-07 | 2012-08-21 | Tokyo Electron Limited | Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer |
US8242017B2 (en) * | 2008-03-07 | 2012-08-14 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and structure for copper gap fill plating of interconnect structures for semiconductor integrated circuits |
US7799681B2 (en) | 2008-07-15 | 2010-09-21 | Tokyo Electron Limited | Method for forming a ruthenium metal cap layer |
JP5699425B2 (en) * | 2008-08-05 | 2015-04-08 | 東京エレクトロン株式会社 | Mounting table structure and film forming apparatus |
US20100081274A1 (en) * | 2008-09-29 | 2010-04-01 | Tokyo Electron Limited | Method for forming ruthenium metal cap layers |
JP5732772B2 (en) | 2009-12-28 | 2015-06-10 | 東ソー株式会社 | Ruthenium complex mixture, production method thereof, film-forming composition, ruthenium-containing film and production method thereof |
US9865501B2 (en) | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
US9159671B2 (en) | 2013-11-19 | 2015-10-13 | International Business Machines Corporation | Copper wire and dielectric with air gaps |
US9469912B2 (en) | 2014-04-21 | 2016-10-18 | Lam Research Corporation | Pretreatment method for photoresist wafer processing |
US9472377B2 (en) * | 2014-10-17 | 2016-10-18 | Lam Research Corporation | Method and apparatus for characterizing metal oxide reduction |
US9735035B1 (en) * | 2016-01-29 | 2017-08-15 | Lam Research Corporation | Methods and apparatuses for estimating on-wafer oxide layer reduction effectiveness via color sensing |
US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040105934A1 (en) * | 2002-06-04 | 2004-06-03 | Mei Chang | Ruthenium layer formation for copper film deposition |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6319832B1 (en) | 1999-02-19 | 2001-11-20 | Micron Technology, Inc. | Methods of making semiconductor devices |
US6303809B1 (en) | 1999-12-10 | 2001-10-16 | Yun Chi | Organometallic ruthenium and osmium source reagents for chemical vapor deposition |
US6440495B1 (en) | 2000-08-03 | 2002-08-27 | Applied Materials, Inc. | Chemical vapor deposition of ruthenium films for metal electrode applications |
JP2002075994A (en) * | 2000-08-24 | 2002-03-15 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
JP2002289559A (en) * | 2001-02-01 | 2002-10-04 | Texas Instr Inc <Ti> | Production method for integrated circuit |
KR100727372B1 (en) | 2001-09-12 | 2007-06-12 | 토소가부시키가이샤 | Ruthenium complex, manufacturing process thereof and the method for forming thin-film using the complex |
US6713373B1 (en) | 2002-02-05 | 2004-03-30 | Novellus Systems, Inc. | Method for obtaining adhesion for device manufacture |
US7910165B2 (en) | 2002-06-04 | 2011-03-22 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US7107998B2 (en) | 2003-10-16 | 2006-09-19 | Novellus Systems, Inc. | Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus |
US20050110142A1 (en) | 2003-11-26 | 2005-05-26 | Lane Michael W. | Diffusion barriers formed by low temperature deposition |
US7074719B2 (en) * | 2003-11-28 | 2006-07-11 | International Business Machines Corporation | ALD deposition of ruthenium |
US7285308B2 (en) | 2004-02-23 | 2007-10-23 | Advanced Technology Materials, Inc. | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium |
US20060068098A1 (en) * | 2004-09-27 | 2006-03-30 | Tokyo Electron Limited | Deposition of ruthenium metal layers in a thermal chemical vapor deposition process |
US7270848B2 (en) | 2004-11-23 | 2007-09-18 | Tokyo Electron Limited | Method for increasing deposition rates of metal layers from metal-carbonyl precursors |
-
2005
- 2005-03-31 US US11/096,095 patent/US7288479B2/en active Active
-
2006
- 2006-03-14 WO PCT/US2006/009219 patent/WO2006107545A2/en active Application Filing
- 2006-03-28 TW TW095110683A patent/TWI313910B/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040105934A1 (en) * | 2002-06-04 | 2004-06-03 | Mei Chang | Ruthenium layer formation for copper film deposition |
Non-Patent Citations (1)
Title |
---|
WANG Q ET AL: "Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 84, no. 8, 23 February 2004 (2004-02-23), pages 1380 - 1382, XP012062189, ISSN: 0003-6951 * |
Also Published As
Publication number | Publication date |
---|---|
US20060223310A1 (en) | 2006-10-05 |
WO2006107545A2 (en) | 2006-10-12 |
US7288479B2 (en) | 2007-10-30 |
TWI313910B (en) | 2009-08-21 |
TW200644164A (en) | 2006-12-16 |
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