WO2006138062A3 - Scanned rapid thermal processing with feed forward control - Google Patents

Scanned rapid thermal processing with feed forward control Download PDF

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Publication number
WO2006138062A3
WO2006138062A3 PCT/US2006/021178 US2006021178W WO2006138062A3 WO 2006138062 A3 WO2006138062 A3 WO 2006138062A3 US 2006021178 W US2006021178 W US 2006021178W WO 2006138062 A3 WO2006138062 A3 WO 2006138062A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermal processing
scanned
rapid thermal
feed forward
forward control
Prior art date
Application number
PCT/US2006/021178
Other languages
French (fr)
Other versions
WO2006138062A2 (en
Inventor
Andreas G Hegedus
Original Assignee
Applied Materials Inc
Andreas G Hegedus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Andreas G Hegedus filed Critical Applied Materials Inc
Publication of WO2006138062A2 publication Critical patent/WO2006138062A2/en
Publication of WO2006138062A3 publication Critical patent/WO2006138062A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Abstract

A thermal processing system and method including scanning a line beam (40) of intense radiation (36) in a direction transverse to the line direction for thermally processing a wafer (10) with a localized effectively pulsed beam of radiant energy. The thickness of the wafer is two-dimensionally mapped and the map (26) is used to control (42) the degree of thermal processing, for example, the intensity of radiation in the line beam to increase the uniformity. The processing may include selective etching of a pre-existing layer or depositing more material by chemical vapor deposition.
PCT/US2006/021178 2005-06-13 2006-05-30 Scanned rapid thermal processing with feed forward control WO2006138062A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/151,879 US7279657B2 (en) 2005-06-13 2005-06-13 Scanned rapid thermal processing with feed forward control
US11/151,879 2005-06-13

Publications (2)

Publication Number Publication Date
WO2006138062A2 WO2006138062A2 (en) 2006-12-28
WO2006138062A3 true WO2006138062A3 (en) 2007-04-26

Family

ID=37566076

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/021178 WO2006138062A2 (en) 2005-06-13 2006-05-30 Scanned rapid thermal processing with feed forward control

Country Status (3)

Country Link
US (2) US7279657B2 (en)
TW (1) TWI342048B (en)
WO (1) WO2006138062A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7387954B2 (en) 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US8206996B2 (en) 2006-03-28 2012-06-26 Lam Research Corporation Etch tool process indicator method and apparatus
US8319149B2 (en) * 2008-04-16 2012-11-27 Applied Materials, Inc. Radiant anneal throughput optimization and thermal history minimization by interlacing
US8173931B2 (en) * 2008-06-13 2012-05-08 Electro Scientific Industries, Inc. Automatic recipe management for laser processing a work piece
JP5387451B2 (en) * 2010-03-04 2014-01-15 信越半導体株式会社 Design method and manufacturing method of SOI wafer
US8030725B1 (en) * 2010-10-05 2011-10-04 Skyworks Solutions, Inc. Apparatus and methods for detecting evaporation conditions
US8946594B2 (en) * 2011-11-04 2015-02-03 Applied Materials, Inc. Optical design for line generation using microlens array
KR101993330B1 (en) * 2012-10-09 2019-06-27 삼성디스플레이 주식회사 Laser irradiation apparatus and method for manufacturing organic light emitting display apparatus using the same
DE102012111698A1 (en) * 2012-12-03 2014-03-20 Solarworld Innovations Gmbh Method for processing e.g. crystalline silicon wafer, involves reducing heat produced from laser beam in edge area of wafer, providing edge area with wafer edge, and placing laser beam and wafer in wafer edge according to laser trench

Citations (4)

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Publication number Priority date Publication date Assignee Title
US5254830A (en) * 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US6531681B1 (en) * 2000-03-27 2003-03-11 Ultratech Stepper, Inc. Apparatus having line source of radiant energy for exposing a substrate
US6908774B2 (en) * 2002-08-12 2005-06-21 S.O. I. Tec Silicon On Insulator Technologies S.A. Method and apparatus for adjusting the thickness of a thin layer of semiconductor material

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US5608526A (en) * 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
WO2002057812A2 (en) * 2001-01-17 2002-07-25 Neophotonics Corporation Optical materials with selected index-of-refraction
US6900228B1 (en) * 1998-03-10 2005-05-31 Research Triangle Institute Opiate compounds, methods of making and methods of use
US6885444B2 (en) * 1998-06-10 2005-04-26 Boxer Cross Inc Evaluating a multi-layered structure for voids
EP1089318A1 (en) * 1999-09-30 2001-04-04 Infineon Technologies AG Method for determining the endpoint of etch process steps
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6806951B2 (en) * 2000-09-20 2004-10-19 Kla-Tencor Technologies Corp. Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen
US7005601B2 (en) * 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US6927169B2 (en) * 2002-12-19 2005-08-09 Applied Materials Inc. Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing
WO2005036601A2 (en) * 2003-10-07 2005-04-21 Midwest Research Institute Wafer characteristics via reflectomeytry and wafer processing apparatus and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254830A (en) * 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US6531681B1 (en) * 2000-03-27 2003-03-11 Ultratech Stepper, Inc. Apparatus having line source of radiant energy for exposing a substrate
US6908774B2 (en) * 2002-08-12 2005-06-21 S.O. I. Tec Silicon On Insulator Technologies S.A. Method and apparatus for adjusting the thickness of a thin layer of semiconductor material

Also Published As

Publication number Publication date
WO2006138062A2 (en) 2006-12-28
US7279657B2 (en) 2007-10-09
US20070020783A1 (en) 2007-01-25
TWI342048B (en) 2011-05-11
US7906348B2 (en) 2011-03-15
TW200703515A (en) 2007-01-16
US20060289504A1 (en) 2006-12-28

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