WO2007015965A3 - Semiconductor die attachment for high vacuum tubes - Google Patents
Semiconductor die attachment for high vacuum tubes Download PDFInfo
- Publication number
- WO2007015965A3 WO2007015965A3 PCT/US2006/028418 US2006028418W WO2007015965A3 WO 2007015965 A3 WO2007015965 A3 WO 2007015965A3 US 2006028418 W US2006028418 W US 2006028418W WO 2007015965 A3 WO2007015965 A3 WO 2007015965A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- high vacuum
- semiconductor die
- vacuum tubes
- die attachment
- spacer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05005—Structure
- H01L2224/05008—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05171—Chromium [Cr] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05569—Disposition the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13109—Indium [In] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
There is described novel bonding and interconnect techniques including a spacer for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06788144.1A EP1907159B1 (en) | 2005-07-28 | 2006-07-21 | Semiconductor die attachment for high vacuum tubes |
JP2008523996A JP5063597B2 (en) | 2005-07-28 | 2006-07-21 | Semiconductor die attachment for high vacuum containers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/193,065 | 2005-07-28 | ||
US11/193,065 US7607560B2 (en) | 2004-05-14 | 2005-07-28 | Semiconductor die attachment for high vacuum tubes |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007015965A2 WO2007015965A2 (en) | 2007-02-08 |
WO2007015965A3 true WO2007015965A3 (en) | 2008-07-24 |
Family
ID=37709077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/028418 WO2007015965A2 (en) | 2005-07-28 | 2006-07-21 | Semiconductor die attachment for high vacuum tubes |
Country Status (4)
Country | Link |
---|---|
US (1) | US7607560B2 (en) |
EP (1) | EP1907159B1 (en) |
JP (1) | JP5063597B2 (en) |
WO (1) | WO2007015965A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8071932B2 (en) * | 2008-10-27 | 2011-12-06 | Itt Manufacturing Enterprises, Inc. | Apparatus and method for sealing an image intensifier device |
US7880128B2 (en) | 2008-10-27 | 2011-02-01 | Itt Manufacturing Enterprises, Inc. | Vented header assembly of an image intensifier device |
US7880127B2 (en) * | 2008-10-27 | 2011-02-01 | Itt Manufacturing Enterprises, Inc. | Apparatus and method for aligning an image sensor including a header alignment means |
US8698925B2 (en) * | 2010-04-21 | 2014-04-15 | Intevac, Inc. | Collimator bonding structure and method |
CN103915461B (en) * | 2014-04-01 | 2016-09-07 | 格科微电子(上海)有限公司 | Cmos image sensor method for packing |
US9734977B2 (en) | 2015-07-16 | 2017-08-15 | Intevac, Inc. | Image intensifier with indexed compliant anode assembly |
US10189706B2 (en) * | 2016-11-08 | 2019-01-29 | Dunan Microstaq, Inc. | Method for self-aligning solder-attached MEMS die to a mounting surface |
US10584027B2 (en) | 2017-12-01 | 2020-03-10 | Elbit Systems Of America, Llc | Method for forming hermetic seals in MEMS devices |
CN108180672B (en) * | 2017-12-13 | 2020-05-01 | 中国科学院光电技术研究所 | Vacuum packaging Dewar of EMCCD detector |
CN110666269B (en) * | 2019-10-11 | 2021-06-25 | 华东光电集成器件研究所 | Combined eutectic welding device and using method thereof |
US11810747B2 (en) * | 2020-07-29 | 2023-11-07 | Elbit Systems Of America, Llc | Wafer scale enhanced gain electron bombarded CMOS imager |
US11676903B2 (en) * | 2020-08-20 | 2023-06-13 | International Business Machines Corporation | Combined backing plate and housing for use in bump bonded chip assembly |
CN113488443A (en) * | 2021-06-08 | 2021-10-08 | 电子科技大学 | Refrigeration type NEA GaN electron source component structure under ultrahigh vacuum system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6764875B2 (en) * | 1998-07-29 | 2004-07-20 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US6837766B2 (en) * | 2000-08-31 | 2005-01-04 | Intevac, Inc. | Unitary vacuum tube incorporating high voltage isolation |
US20060113655A1 (en) * | 2004-05-14 | 2006-06-01 | Costello Kenneth A | Semiconductor die attachment for high vacuum tubes |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4044374A (en) * | 1976-01-19 | 1977-08-23 | Texas Instruments Incorporated | Semiconductor device header suitable for vacuum tube applications |
JPS5664448A (en) * | 1979-10-30 | 1981-06-01 | Nec Corp | Semiconductor device |
FR2488444A1 (en) * | 1980-08-08 | 1982-02-12 | Thomson Csf | SEMICONDUCTOR DEVICE USABLE IN HIGH FREQUENCY AND METHOD FOR MANUFACTURING THE SAME |
JPS6010757A (en) * | 1983-06-30 | 1985-01-19 | Nec Corp | Manufacture of semiconductor device |
FR2574239B1 (en) | 1984-11-30 | 1987-01-23 | Labo Electronique Physique | IMAGE SENSOR FOR CAMERA OPERATING IN DAY-NIGHT MODE |
JPS63287038A (en) * | 1987-05-20 | 1988-11-24 | Hitachi Ltd | Package structure |
US5090609A (en) | 1989-04-28 | 1992-02-25 | Hitachi, Ltd. | Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals |
FR2705832B1 (en) | 1993-05-28 | 1995-06-30 | Commissariat Energie Atomique | Method for producing a sealing bead and mechanical strength between a substrate and a chip hybridized by balls on the substrate. |
US6614110B1 (en) | 1994-12-22 | 2003-09-02 | Benedict G Pace | Module with bumps for connection and support |
US5612256A (en) * | 1995-02-10 | 1997-03-18 | Micron Display Technology, Inc. | Multi-layer electrical interconnection structures and fabrication methods |
JP3324326B2 (en) * | 1995-03-24 | 2002-09-17 | 三菱電機株式会社 | Semiconductor device |
US5800726A (en) | 1995-07-26 | 1998-09-01 | International Business Machines Corporation | Selective chemical etching in microelectronics fabrication |
CA2213034C (en) | 1996-09-02 | 2002-12-17 | Murata Manufacturing Co., Ltd. | A semiconductor device with a passivation film |
US6281572B1 (en) * | 1997-12-05 | 2001-08-28 | The Charles Stark Draper Laboratory, Inc. | Integrated circuit header assembly |
US6020646A (en) | 1997-12-05 | 2000-02-01 | The Charles Stark Draper Laboratory, Inc. | Intergrated circuit die assembly |
US5994784A (en) * | 1997-12-18 | 1999-11-30 | Micron Technology, Inc. | Die positioning in integrated circuit packaging |
JP4173575B2 (en) | 1998-01-16 | 2008-10-29 | 浜松ホトニクス株式会社 | Imaging device |
GB9828166D0 (en) * | 1998-12-22 | 1999-02-17 | Eev Ltd | Imaging apparatus |
DE69913204T2 (en) | 1999-01-21 | 2004-09-09 | Hamamatsu Photonics K.K., Hamamatsu | ELECTRON TUBE |
US6331753B1 (en) | 1999-03-18 | 2001-12-18 | Litton Systems, Inc. | Image intensifier tube |
US6285018B1 (en) | 1999-07-20 | 2001-09-04 | Intevac, Inc. | Electron bombarded active pixel sensor |
US6656768B2 (en) | 2001-02-08 | 2003-12-02 | Texas Instruments Incorporated | Flip-chip assembly of protected micromechanical devices |
KR100398716B1 (en) | 2000-06-12 | 2003-09-19 | 가부시키가이샤 히타치세이사쿠쇼 | Semiconductor module and circuit substrate |
KR100407448B1 (en) | 2000-06-12 | 2003-11-28 | 가부시키가이샤 히타치세이사쿠쇼 | Electronic apparatus and semiconductor device |
US6747258B2 (en) | 2001-10-09 | 2004-06-08 | Itt Manufacturing Enterprises, Inc. | Intensified hybrid solid-state sensor with an insulating layer |
CN1445049A (en) | 2002-03-19 | 2003-10-01 | 日本胜利株式会社 | Soldering tin paste, welding finished product and welding method |
JP4174247B2 (en) * | 2002-06-24 | 2008-10-29 | 富士フイルム株式会社 | Manufacturing method of solid-state imaging device |
US7017795B2 (en) * | 2003-11-03 | 2006-03-28 | Indium Corporation Of America | Solder pastes for providing high elasticity, low rigidity solder joints |
US7183641B2 (en) | 2005-03-30 | 2007-02-27 | Intel Corporation | Integrated heat spreader with intermetallic layer and method for making |
US7224067B2 (en) | 2005-09-15 | 2007-05-29 | Intel Corporation | Intermetallic solder with low melting point |
JP4961393B2 (en) * | 2008-06-16 | 2012-06-27 | 富士フイルム株式会社 | Solid-state imaging device and method for manufacturing solid-state imaging device |
-
2005
- 2005-07-28 US US11/193,065 patent/US7607560B2/en active Active
-
2006
- 2006-07-21 JP JP2008523996A patent/JP5063597B2/en not_active Expired - Fee Related
- 2006-07-21 EP EP06788144.1A patent/EP1907159B1/en active Active
- 2006-07-21 WO PCT/US2006/028418 patent/WO2007015965A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6764875B2 (en) * | 1998-07-29 | 2004-07-20 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US6837766B2 (en) * | 2000-08-31 | 2005-01-04 | Intevac, Inc. | Unitary vacuum tube incorporating high voltage isolation |
US20060113655A1 (en) * | 2004-05-14 | 2006-06-01 | Costello Kenneth A | Semiconductor die attachment for high vacuum tubes |
Also Published As
Publication number | Publication date |
---|---|
EP1907159A4 (en) | 2012-07-18 |
WO2007015965A2 (en) | 2007-02-08 |
JP2009503857A (en) | 2009-01-29 |
US20050258212A1 (en) | 2005-11-24 |
US7607560B2 (en) | 2009-10-27 |
JP5063597B2 (en) | 2012-10-31 |
EP1907159B1 (en) | 2018-08-22 |
EP1907159A2 (en) | 2008-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2007015965A3 (en) | Semiconductor die attachment for high vacuum tubes | |
WO2005114727A3 (en) | Semiconductor die attachment for high vaccum tubes | |
USD560822S1 (en) | Corner piece for a wall | |
USD645156S1 (en) | Test tube rack | |
USD560436S1 (en) | Aeration wine glass | |
USD574951S1 (en) | Flow tube | |
USD630346S1 (en) | Framing clip | |
EP1725822A4 (en) | Flexible loop thermosyphon | |
USD590959S1 (en) | Window component extrusion | |
USD561690S1 (en) | Windmill | |
USD602174S1 (en) | Window component extrusion | |
USD603978S1 (en) | Window component extrusion | |
USD546976S1 (en) | Framing extrusion | |
USD578665S1 (en) | Window component extrusion | |
USD540883S1 (en) | Die with inner die | |
USD596759S1 (en) | Test tube management device | |
USD546977S1 (en) | Framing extrusion | |
USD596763S1 (en) | Window component extrusion | |
USD529218S1 (en) | Tulip shaped ornamental lamp | |
USD608467S1 (en) | Window component extrusion | |
USD537319S1 (en) | Knob | |
USD517775S1 (en) | Belt | |
USD792612S1 (en) | Window component extrusion | |
USD590960S1 (en) | Window component extrusion | |
USD546978S1 (en) | Framing extrusion |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2008523996 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006788144 Country of ref document: EP |