WO2007016218A3 - Integrated electroless deposition system - Google Patents

Integrated electroless deposition system Download PDF

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Publication number
WO2007016218A3
WO2007016218A3 PCT/US2006/029137 US2006029137W WO2007016218A3 WO 2007016218 A3 WO2007016218 A3 WO 2007016218A3 US 2006029137 W US2006029137 W US 2006029137W WO 2007016218 A3 WO2007016218 A3 WO 2007016218A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
depositing
electroless
seed layer
interconnect features
Prior art date
Application number
PCT/US2006/029137
Other languages
French (fr)
Other versions
WO2007016218A2 (en
Inventor
Dmitry Lubomirsky
Arulkumar Shanmugasundram
Ambra Allen D
Timothy W Weidman
Michael P Stewart
Eugene Rabinovich
Svetlana Sherman
Manoocher Birang
Yaxin Wang
Michael X Yang
Bradley Hansen
Original Assignee
Applied Materials Inc
Dmitry Lubomirsky
Arulkumar Shanmugasundram
Ambra Allen D
Timothy W Weidman
Michael P Stewart
Eugene Rabinovich
Svetlana Sherman
Manoocher Birang
Yaxin Wang
Michael X Yang
Bradley Hansen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/192,993 external-priority patent/US20060033678A1/en
Priority claimed from US11/428,230 external-priority patent/US20070111519A1/en
Application filed by Applied Materials Inc, Dmitry Lubomirsky, Arulkumar Shanmugasundram, Ambra Allen D, Timothy W Weidman, Michael P Stewart, Eugene Rabinovich, Svetlana Sherman, Manoocher Birang, Yaxin Wang, Michael X Yang, Bradley Hansen filed Critical Applied Materials Inc
Publication of WO2007016218A2 publication Critical patent/WO2007016218A2/en
Publication of WO2007016218A3 publication Critical patent/WO2007016218A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1682—Control of atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1685—Process conditions with supercritical condition, e.g. chemical fluid deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886—Multistep pretreatment
    • C23C18/1889—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Abstract

Embodiments of the invention provide methods for depositing a material onto a surface of a substrate (120) by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method of depositing a seed layer (129) on a substrate (120) with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer (129) on a substrate (120), fill interconnect features on a substrate (120), or sequentially deposit both a seed layer (129) and fill interconnect features on the substrate (120). One embodiment provides a method for forming a capping layer over substrate interconnects. Embodiments further provide a cluster tool (200) configured to deposit a material onto a substrate surface by using one or more electroless (202, 204), electrochemical plating (210, 212), CVD and/or ALD processing chambers (235). In one aspect, a ruthenium-containing catalytic layer is formed.
PCT/US2006/029137 2005-07-29 2006-07-28 Integrated electroless deposition system WO2007016218A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/192,993 US20060033678A1 (en) 2004-01-26 2005-07-29 Integrated electroless deposition system
US11/192,993 2005-07-29
US11/428,230 US20070111519A1 (en) 2003-10-15 2006-06-30 Integrated electroless deposition system
US11/428,230 2006-06-30

Publications (2)

Publication Number Publication Date
WO2007016218A2 WO2007016218A2 (en) 2007-02-08
WO2007016218A3 true WO2007016218A3 (en) 2009-04-30

Family

ID=37709161

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/029137 WO2007016218A2 (en) 2005-07-29 2006-07-28 Integrated electroless deposition system

Country Status (2)

Country Link
TW (1) TWI374951B (en)
WO (1) WO2007016218A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5295719B2 (en) * 2008-10-31 2013-09-18 シャープ株式会社 Plating equipment
US9328427B2 (en) * 2012-09-28 2016-05-03 Sunpower Corporation Edgeless pulse plating and metal cleaning methods for solar cells
TWI559598B (en) * 2014-05-16 2016-11-21 台灣塑膠工業股份有限公司 Manufacturing apparatus and method for production of dye-sensitized solar cell
TWI633939B (en) * 2016-02-26 2018-09-01 弘塑科技股份有限公司 Method and device of supplying process liquid
US11587807B2 (en) * 2018-10-28 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Annealing apparatus and method thereof
CN113881993A (en) * 2021-09-29 2022-01-04 新阳硅密（上海）半导体技术有限公司 Process method capable of optimizing electroplating hole filling capacity
CN113897649A (en) * 2021-09-29 2022-01-07 新阳硅密（上海）半导体技术有限公司 TSV (through silicon via) combined electroplating pretreatment process method
CN114250501A (en) * 2021-12-24 2022-03-29 新阳硅密（上海）半导体技术有限公司 Equipment and method capable of continuously carrying out electroplating and chemical plating
CN114182333B (en) * 2021-12-24 2023-06-23 新阳硅密（上海）半导体技术有限公司 Metal plating equipment and method for sharing wafer clamp
CN114232062A (en) * 2021-12-24 2022-03-25 新阳硅密（上海）半导体技术有限公司 Metal plating equipment

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862023A (en) * 1972-09-15 1975-01-21 Ppg Industries Inc Electrode having silicide surface
US6110011A (en) * 1997-11-10 2000-08-29 Applied Materials, Inc. Integrated electrodeposition and chemical-mechanical polishing tool
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6482740B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US6555909B1 (en) * 2001-01-11 2003-04-29 Advanced Micro Devices, Inc. Seedless barrier layers in integrated circuits and a method of manufacture therefor
US20030190812A1 (en) * 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US20040013858A1 (en) * 2000-06-23 2004-01-22 Hacker Nigel P. Method to restore hydrophobicity in dielectric films and materials
US20040045837A1 (en) * 2001-11-14 2004-03-11 Hideo Yoshida Method for treating the surface of object and apparatus thereof
US6770565B2 (en) * 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
US6821909B2 (en) * 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862023A (en) * 1972-09-15 1975-01-21 Ppg Industries Inc Electrode having silicide surface
US6110011A (en) * 1997-11-10 2000-08-29 Applied Materials, Inc. Integrated electrodeposition and chemical-mechanical polishing tool
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6482740B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH
US20040013858A1 (en) * 2000-06-23 2004-01-22 Hacker Nigel P. Method to restore hydrophobicity in dielectric films and materials
US6555909B1 (en) * 2001-01-11 2003-04-29 Advanced Micro Devices, Inc. Seedless barrier layers in integrated circuits and a method of manufacture therefor
US20040045837A1 (en) * 2001-11-14 2004-03-11 Hideo Yoshida Method for treating the surface of object and apparatus thereof
US6770565B2 (en) * 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
US20030190812A1 (en) * 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US6821909B2 (en) * 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application

Also Published As

Publication number Publication date
WO2007016218A2 (en) 2007-02-08
TW200716794A (en) 2007-05-01
TWI374951B (en) 2012-10-21

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