WO2007017803A3 - Ldmos transistor - Google Patents

Ldmos transistor Download PDF

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Publication number
WO2007017803A3
WO2007017803A3 PCT/IB2006/052644 IB2006052644W WO2007017803A3 WO 2007017803 A3 WO2007017803 A3 WO 2007017803A3 IB 2006052644 W IB2006052644 W IB 2006052644W WO 2007017803 A3 WO2007017803 A3 WO 2007017803A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
drain
ldmos transistor
metal layer
contact region
Prior art date
Application number
PCT/IB2006/052644
Other languages
French (fr)
Other versions
WO2007017803A2 (en
Inventor
Stephan J C H Theeuwen
Rijs Freerk Van
Petra C A Hammes
Original Assignee
Nxp Bv
Zawilski Peter
Stephan J C H Theeuwen
Rijs Freerk Van
Petra C A Hammes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv, Zawilski Peter, Stephan J C H Theeuwen, Rijs Freerk Van, Petra C A Hammes filed Critical Nxp Bv
Priority to US11/997,209 priority Critical patent/US20080237705A1/en
Priority to EP06780280A priority patent/EP1915783A2/en
Priority to KR1020087005555A priority patent/KR100932363B1/en
Priority to JP2008525687A priority patent/JP2009505391A/en
Publication of WO2007017803A2 publication Critical patent/WO2007017803A2/en
Publication of WO2007017803A3 publication Critical patent/WO2007017803A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/66704—Lateral DMOS transistors, i.e. LDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The LDMOS transistor (1) of the invention comprises a substrate (2), a gate electrode (10), a substrate contact region (11), a source region (3), a channel region (4) and a drain region (5), which drain region (5) comprises a drain contact region (6) and a drain extension region (7). The drain contact region (6) is electrically connected to a top metal layer (23), which extends over the drain extension region (7), with a distance (723) between the top metal layer (23) and the drain extension region (7) that is larger than 2μm. This way the area of the drain contact region (6) may be reduced and the RF power output efficiency of the LDMOS transistor (1) increased. In another embodiment the source region (3) is electrically connected to the substrate contact region (11) via a suicide layer (32) instead of a first metal layer (21), thereby reducing the capacitive coupling between the source region (3) and the drain region (5) and hence increasing the RF power output efficiency of the LDMOS transistor (1) further.
PCT/IB2006/052644 2005-08-10 2006-08-02 Ldmos transistor WO2007017803A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US11/997,209 US20080237705A1 (en) 2005-08-10 2006-08-02 Ldmos Transistor
EP06780280A EP1915783A2 (en) 2005-08-10 2006-08-02 Ldmos transistor
KR1020087005555A KR100932363B1 (en) 2005-08-10 2006-08-02 LMDMOS transistor
JP2008525687A JP2009505391A (en) 2005-08-10 2006-08-02 LDMOS transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05107355.9 2005-08-10
EP05107355 2005-08-10

Publications (2)

Publication Number Publication Date
WO2007017803A2 WO2007017803A2 (en) 2007-02-15
WO2007017803A3 true WO2007017803A3 (en) 2007-10-18

Family

ID=37668131

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2006/052644 WO2007017803A2 (en) 2005-08-10 2006-08-02 Ldmos transistor

Country Status (7)

Country Link
US (1) US20080237705A1 (en)
EP (1) EP1915783A2 (en)
JP (1) JP2009505391A (en)
KR (1) KR100932363B1 (en)
CN (1) CN101238585A (en)
TW (1) TW200717799A (en)
WO (1) WO2007017803A2 (en)

Families Citing this family (22)

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Publication number Priority date Publication date Assignee Title
US7859336B2 (en) * 2007-03-13 2010-12-28 Astec International Limited Power supply providing ultrafast modulation of output voltage
US7994761B2 (en) * 2007-10-08 2011-08-09 Astec International Limited Linear regulator with RF transistors and a bias adjustment circuit
WO2009144616A1 (en) * 2008-05-26 2009-12-03 Nxp B.V. Ldmos transistor
US20110073946A1 (en) * 2008-05-26 2011-03-31 Nxp B.V. Ldmos transistor
WO2010010506A1 (en) 2008-07-22 2010-01-28 Nxp B.V. Ldmos having a field plate
WO2010016008A1 (en) * 2008-08-05 2010-02-11 Nxp B.V. Ldmos with discontinuous metal stack fingers
JP5487852B2 (en) * 2008-09-30 2014-05-14 サンケン電気株式会社 Semiconductor device
US8698240B2 (en) * 2010-05-25 2014-04-15 Macronix International Co., Ltd. Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the same
JP5712579B2 (en) * 2010-11-30 2015-05-07 富士通セミコンダクター株式会社 Semiconductor device
CN102569381A (en) * 2010-12-07 2012-07-11 上海华虹Nec电子有限公司 LDMOS structure with shield grid and preparation method thereof
CN102723329A (en) * 2012-07-13 2012-10-10 上海先进半导体制造股份有限公司 High-density submicro high-voltage binary-coded decimal (BCD) semiconductor device and manufacturing method thereof
CN103855210A (en) * 2012-12-03 2014-06-11 上海华虹宏力半导体制造有限公司 Radio frequency transverse double-diffusion field effect transistor and manufacturing method thereof
CN103871881B (en) * 2012-12-14 2017-04-05 上海华虹宏力半导体制造有限公司 The groove and preparation method of p-type LDMOS device
US9041127B2 (en) 2013-05-14 2015-05-26 International Business Machines Corporation FinFET device technology with LDMOS structures for high voltage operations
CN104465772A (en) * 2014-11-10 2015-03-25 上海华虹宏力半导体制造有限公司 High-efficiency radio frequency LDMOS device and manufacturing method thereof
US9281379B1 (en) 2014-11-19 2016-03-08 International Business Machines Corporation Gate-all-around fin device
US10205024B2 (en) * 2016-02-05 2019-02-12 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having field plate and associated fabricating method
US9653410B1 (en) * 2016-03-15 2017-05-16 Nxp Usa, Inc. Transistor with shield structure, packaged device, and method of manufacture
TWI597847B (en) * 2016-09-05 2017-09-01 新唐科技股份有限公司 High voltage semiconductor device
CN106960879B (en) * 2017-05-23 2020-09-15 上海华虹宏力半导体制造有限公司 MOSFET structure for improving radio frequency switch characteristic
US20200144381A1 (en) * 2018-11-07 2020-05-07 Monolithic Power Systems, Inc. Ldmos device with a drain contact structure with reduced size
US11003498B1 (en) 2020-08-10 2021-05-11 Coupang Corp. Computerized systems and methods for fail-safe loading of information on a user interface using a circuit breaker

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WO2005022645A2 (en) * 2003-08-27 2005-03-10 Koninklijke Philips Electronics N.V. Electronic device comprising an ldmos transistor

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Also Published As

Publication number Publication date
TW200717799A (en) 2007-05-01
JP2009505391A (en) 2009-02-05
KR20080038207A (en) 2008-05-02
US20080237705A1 (en) 2008-10-02
EP1915783A2 (en) 2008-04-30
WO2007017803A2 (en) 2007-02-15
KR100932363B1 (en) 2009-12-16
CN101238585A (en) 2008-08-06

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