WO2007046852A3 - Discretized processing and process sequence integration of substrate regions - Google Patents
Discretized processing and process sequence integration of substrate regions Download PDFInfo
- Publication number
- WO2007046852A3 WO2007046852A3 PCT/US2006/012917 US2006012917W WO2007046852A3 WO 2007046852 A3 WO2007046852 A3 WO 2007046852A3 US 2006012917 W US2006012917 W US 2006012917W WO 2007046852 A3 WO2007046852 A3 WO 2007046852A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- process sequence
- substrate
- regions
- sequence integration
- substrate regions
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008535507A JP5284098B2 (en) | 2005-10-11 | 2006-04-07 | Discrete process and process sequence integration in substrate area |
CN200680037944.XA CN101512720B (en) | 2005-10-11 | 2006-04-07 | The integration of the process sequence of discrete processing method and substrate regions |
EP20060740662 EP1935003A4 (en) | 2005-10-11 | 2006-04-07 | Discretized processing and process sequence integration of substrate regions |
KR1020087008826A KR101281231B1 (en) | 2005-10-11 | 2006-04-07 | Discretized processing and process sequence integration of substrate regions |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72518605P | 2005-10-11 | 2005-10-11 | |
US60/725,186 | 2005-10-11 | ||
US11/352,077 | 2006-02-10 | ||
US11/352,077 US8084400B2 (en) | 2005-10-11 | 2006-02-10 | Methods for discretized processing and process sequence integration of regions of a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007046852A2 WO2007046852A2 (en) | 2007-04-26 |
WO2007046852A3 true WO2007046852A3 (en) | 2009-04-16 |
Family
ID=37911512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/012917 WO2007046852A2 (en) | 2005-10-11 | 2006-04-07 | Discretized processing and process sequence integration of substrate regions |
Country Status (6)
Country | Link |
---|---|
US (10) | US8084400B2 (en) |
EP (1) | EP1935003A4 (en) |
JP (1) | JP5284098B2 (en) |
KR (1) | KR101281231B1 (en) |
TW (1) | TWI326106B (en) |
WO (1) | WO2007046852A2 (en) |
Families Citing this family (268)
Publication number | Priority date | Publication date | Assignee | Title |
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US8084400B2 (en) * | 2005-10-11 | 2011-12-27 | Intermolecular, Inc. | Methods for discretized processing and process sequence integration of regions of a substrate |
US7879710B2 (en) * | 2005-05-18 | 2011-02-01 | Intermolecular, Inc. | Substrate processing including a masking layer |
US10627809B2 (en) | 2005-06-18 | 2020-04-21 | Frederick A. Flitsch | Multilevel fabricators |
US9457442B2 (en) | 2005-06-18 | 2016-10-04 | Futrfab, Inc. | Method and apparatus to support process tool modules in a cleanspace fabricator |
US10651063B2 (en) | 2005-06-18 | 2020-05-12 | Frederick A. Flitsch | Methods of prototyping and manufacturing with cleanspace fabricators |
US11024527B2 (en) | 2005-06-18 | 2021-06-01 | Frederick A. Flitsch | Methods and apparatus for novel fabricators with Cleanspace |
US9159592B2 (en) | 2005-06-18 | 2015-10-13 | Futrfab, Inc. | Method and apparatus for an automated tool handling system for a multilevel cleanspace fabricator |
US7513822B2 (en) | 2005-06-18 | 2009-04-07 | Flitsch Frederick A | Method and apparatus for a cleanspace fabricator |
US9059227B2 (en) | 2005-06-18 | 2015-06-16 | Futrfab, Inc. | Methods and apparatus for vertically orienting substrate processing tools in a clean space |
US9339900B2 (en) | 2005-08-18 | 2016-05-17 | Futrfab, Inc. | Apparatus to support a cleanspace fabricator |
US7902063B2 (en) * | 2005-10-11 | 2011-03-08 | Intermolecular, Inc. | Methods for discretized formation of masking and capping layers on a substrate |
US20070202614A1 (en) * | 2006-02-10 | 2007-08-30 | Chiang Tony P | Method and apparatus for combinatorially varying materials, unit process and process sequence |
US8011317B2 (en) * | 2006-12-29 | 2011-09-06 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
JP5200276B2 (en) * | 2007-03-30 | 2013-06-05 | 東京エレクトロン株式会社 | Inline lithography and etching system |
US8334015B2 (en) * | 2007-09-05 | 2012-12-18 | Intermolecular, Inc. | Vapor based combinatorial processing |
US20090102502A1 (en) * | 2007-10-22 | 2009-04-23 | Michel Ranjit Frei | Process testers and testing methodology for thin-film photovoltaic devices |
US20090104342A1 (en) * | 2007-10-22 | 2009-04-23 | Applied Materials, Inc. | Photovoltaic fabrication process monitoring and control using diagnostic devices |
US9044774B2 (en) * | 2007-12-18 | 2015-06-02 | Intermolecular, Inc. | Vented combinatorial processing cell |
US8037894B1 (en) * | 2007-12-27 | 2011-10-18 | Intermolecular, Inc. | Maintaining flow rate of a fluid |
US8882917B1 (en) | 2009-12-31 | 2014-11-11 | Intermolecular, Inc. | Substrate processing including correction for deposition location |
US8822346B1 (en) * | 2008-06-10 | 2014-09-02 | Intermolecular, Inc. | Method and apparatus for self-aligned layer removal |
US7947531B1 (en) | 2008-08-28 | 2011-05-24 | Intermolecular, Inc. | Combinatorial evaluation of dry semiconductor processes |
CN102197168B (en) * | 2008-08-29 | 2014-03-12 | 新日铁住金株式会社 | Method and apparatus for manufacturing SiC single crystal film |
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TW200715351A (en) | 2007-04-16 |
US20150287616A1 (en) | 2015-10-08 |
TWI326106B (en) | 2010-06-11 |
US20120021553A1 (en) | 2012-01-26 |
EP1935003A2 (en) | 2008-06-25 |
US8163631B2 (en) | 2012-04-24 |
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US20080132089A1 (en) | 2008-06-05 |
JP5284098B2 (en) | 2013-09-11 |
WO2007046852A2 (en) | 2007-04-26 |
US8058154B2 (en) | 2011-11-15 |
KR101281231B1 (en) | 2013-07-02 |
US8067340B2 (en) | 2011-11-29 |
US9076716B2 (en) | 2015-07-07 |
EP1935003A4 (en) | 2012-01-11 |
JP2009515322A (en) | 2009-04-09 |
US20120074096A1 (en) | 2012-03-29 |
US8697606B2 (en) | 2014-04-15 |
US8367587B2 (en) | 2013-02-05 |
US20130056101A1 (en) | 2013-03-07 |
US20080133161A1 (en) | 2008-06-05 |
US8084400B2 (en) | 2011-12-27 |
KR20080077091A (en) | 2008-08-21 |
US20140070213A1 (en) | 2014-03-13 |
US20120043298A1 (en) | 2012-02-23 |
US8389445B2 (en) | 2013-03-05 |
US20070082508A1 (en) | 2007-04-12 |
US8610121B2 (en) | 2013-12-17 |
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