WO2007047186A3 - A method for fabricating a high performance pin focal plane structure using three handle wafers - Google Patents

A method for fabricating a high performance pin focal plane structure using three handle wafers Download PDF

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Publication number
WO2007047186A3
WO2007047186A3 PCT/US2006/039336 US2006039336W WO2007047186A3 WO 2007047186 A3 WO2007047186 A3 WO 2007047186A3 US 2006039336 W US2006039336 W US 2006039336W WO 2007047186 A3 WO2007047186 A3 WO 2007047186A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
fabricating
handle wafers
high performance
focal plane
Prior art date
Application number
PCT/US2006/039336
Other languages
French (fr)
Other versions
WO2007047186A2 (en
Inventor
Christopher L Fletcher
Andrew G Toth
Original Assignee
Raytheon Co
Christopher L Fletcher
Andrew G Toth
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co, Christopher L Fletcher, Andrew G Toth filed Critical Raytheon Co
Priority to EP06816511A priority Critical patent/EP1935024B1/en
Priority to JP2008535596A priority patent/JP2009512216A/en
Publication of WO2007047186A2 publication Critical patent/WO2007047186A2/en
Priority to IL184208A priority patent/IL184208A/en
Publication of WO2007047186A3 publication Critical patent/WO2007047186A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Abstract

The present invention concerns, in part, a method for fabricating a silicon PIN detector component wherein three handle wafers are bonded to the wafer at varying points in the fabrication process. The utilization of three handle wafers during fabrication significantly ease handling concerns associated with what would otherwise be a relatively thin and fragile wafer, providing a stable and strong base for supporting those portions of the wafer that will constitute the PIN detector component. In a variant of the present invention, the third handle wafer comprises an optical element transparent in the wavelength of interest.
PCT/US2006/039336 2005-10-12 2006-10-05 A method for fabricating a high performance pin focal plane structure using three handle wafers WO2007047186A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06816511A EP1935024B1 (en) 2005-10-12 2006-10-05 A method for fabricating a high performance pin focal plane structure using three handle wafers
JP2008535596A JP2009512216A (en) 2005-10-12 2006-10-05 Method for manufacturing a high performance PIN focal plane structure using three handle wafers
IL184208A IL184208A (en) 2005-10-12 2007-06-25 Method for fabricating a high performance pin focal plane structure using three handle wafers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/248,366 2005-10-12
US11/248,366 US7504277B2 (en) 2005-10-12 2005-10-12 Method for fabricating a high performance PIN focal plane structure using three handle wafers

Publications (2)

Publication Number Publication Date
WO2007047186A2 WO2007047186A2 (en) 2007-04-26
WO2007047186A3 true WO2007047186A3 (en) 2007-09-20

Family

ID=37963023

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/039336 WO2007047186A2 (en) 2005-10-12 2006-10-05 A method for fabricating a high performance pin focal plane structure using three handle wafers

Country Status (6)

Country Link
US (1) US7504277B2 (en)
EP (1) EP1935024B1 (en)
JP (1) JP2009512216A (en)
IL (1) IL184208A (en)
TW (1) TW200723519A (en)
WO (1) WO2007047186A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2880189B1 (en) * 2004-12-24 2007-03-30 Tracit Technologies Sa METHOD FOR DEFERRING A CIRCUIT ON A MASS PLAN
FR2968457B1 (en) * 2010-12-07 2013-03-22 Sagem Defense Securite METHOD FOR MANUFACTURING AT LEAST ONE DETECTOR PIXEL CELL, SENSOR COMPRISING AT LEAST ONE SUCH CELL.
US9224768B2 (en) 2013-08-05 2015-12-29 Raytheon Company Pin diode structure having surface charge suppression
US10432168B2 (en) * 2015-08-31 2019-10-01 General Electric Company Systems and methods for quartz wafer bonding

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690078B1 (en) * 1999-08-05 2004-02-10 Integration Associates, Inc. Shielded planar dielectrically isolated high speed pin photodiode and method for producing same
US20050156121A1 (en) * 2000-11-09 2005-07-21 Canesta, Inc. Methods and devices for charge management for three-dimensional and color sensing
US20050186759A1 (en) * 2004-02-25 2005-08-25 Daniel So Manufacturing of monolithically integrated pin structures

Family Cites Families (17)

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US5034343A (en) * 1990-03-08 1991-07-23 Harris Corporation Manufacturing ultra-thin wafer using a handle wafer
US5330918A (en) * 1992-08-31 1994-07-19 The United States Of America As Represented By The Secretary Of The Navy Method of forming a high voltage silicon-on-sapphire photocell array
US5798558A (en) * 1995-06-27 1998-08-25 Mission Research Corporation Monolithic x-ray image detector and method of manufacturing
US6096621A (en) * 1997-04-23 2000-08-01 Elantec, Inc. Polysilicon filled trench isolation structure for soi integrated circuits
US6297531B2 (en) * 1998-01-05 2001-10-02 International Business Machines Corporation High performance, low power vertical integrated CMOS devices
US6303967B1 (en) * 1998-02-05 2001-10-16 Integration Associates, Inc. Process for producing an isolated planar high speed pin photodiode
WO2001006546A2 (en) * 1999-07-16 2001-01-25 Massachusetts Institute Of Technology Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration
US6342294B1 (en) 1999-08-12 2002-01-29 Bruce G. Ruefer Composite PTFE article and method of manufacture
US6407440B1 (en) * 2000-02-25 2002-06-18 Micron Technology Inc. Pixel cell with high storage capacitance for a CMOS imager
US6323054B1 (en) * 2000-05-31 2001-11-27 Taiwan Semiconductor Manufacturing Company Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor
JP2004134672A (en) * 2002-10-11 2004-04-30 Sony Corp Method and apparatus for manufacturing super-thin semiconductor device and super-thin backlighting type solid-state imaging device
KR100520626B1 (en) * 2002-12-05 2005-10-10 삼성전자주식회사 Pin photo diode
KR100509355B1 (en) * 2003-09-16 2005-08-18 (주)엑스엘 광통신 Photo-diode and method for fabricating the same
JP4046067B2 (en) * 2003-11-04 2008-02-13 ソニー株式会社 Manufacturing method of solid-state imaging device
FR2863773B1 (en) * 2003-12-12 2006-05-19 Atmel Grenoble Sa PROCESS FOR THE PRODUCTION OF AMINCI SILICON ELECTRONIC CHIPS
US7052927B1 (en) * 2004-01-27 2006-05-30 Raytheon Company Pin detector apparatus and method of fabrication
US7323355B2 (en) * 2005-03-23 2008-01-29 Freescale Semiconductor, Inc. Method of forming a microelectronic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690078B1 (en) * 1999-08-05 2004-02-10 Integration Associates, Inc. Shielded planar dielectrically isolated high speed pin photodiode and method for producing same
US20050156121A1 (en) * 2000-11-09 2005-07-21 Canesta, Inc. Methods and devices for charge management for three-dimensional and color sensing
US20050186759A1 (en) * 2004-02-25 2005-08-25 Daniel So Manufacturing of monolithically integrated pin structures

Also Published As

Publication number Publication date
US20070090418A1 (en) 2007-04-26
JP2009512216A (en) 2009-03-19
EP1935024A4 (en) 2010-09-29
EP1935024B1 (en) 2012-05-16
WO2007047186A2 (en) 2007-04-26
IL184208A (en) 2011-03-31
EP1935024A2 (en) 2008-06-25
TW200723519A (en) 2007-06-16
IL184208A0 (en) 2007-10-31
US7504277B2 (en) 2009-03-17

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