WO2007050312A3 - Low threshold voltage semiconductor device with dual threshold voltage control means - Google Patents
Low threshold voltage semiconductor device with dual threshold voltage control means Download PDFInfo
- Publication number
- WO2007050312A3 WO2007050312A3 PCT/US2006/039940 US2006039940W WO2007050312A3 WO 2007050312 A3 WO2007050312 A3 WO 2007050312A3 US 2006039940 W US2006039940 W US 2006039940W WO 2007050312 A3 WO2007050312 A3 WO 2007050312A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- threshold voltage
- semiconductor device
- control means
- dual
- voltage control
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000009977 dual effect Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Abstract
A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiO2 and a Ge or Si content of greater than 50% and at least one other means for threshold/flatband voltage tuning by material stack engineering is provided. The other means contemplated in the present invention include, for example, utilizing an insulating interlayer atop the dielectric for charge fixing and/or by forming an engineered channel region. The present invention also relates to a method of fabricating such a CMOS structure.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06825854A EP1949447A4 (en) | 2005-10-26 | 2006-10-12 | Low threshold voltage semiconductor device with dual threshold voltage control means |
CN2006800391795A CN101563780B (en) | 2005-10-26 | 2006-10-12 | Low threshold voltage semiconductor device with dual threshold voltage control means |
JP2008537750A JP5199104B2 (en) | 2005-10-26 | 2006-10-12 | Low threshold voltage semiconductor device having dual threshold voltage control means |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/259,644 US7655994B2 (en) | 2005-10-26 | 2005-10-26 | Low threshold voltage semiconductor device with dual threshold voltage control means |
US11/259,644 | 2005-10-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007050312A2 WO2007050312A2 (en) | 2007-05-03 |
WO2007050312A3 true WO2007050312A3 (en) | 2009-04-30 |
Family
ID=37968340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/039940 WO2007050312A2 (en) | 2005-10-26 | 2006-10-12 | Low threshold voltage semiconductor device with dual threshold voltage control means |
Country Status (7)
Country | Link |
---|---|
US (2) | US7655994B2 (en) |
EP (1) | EP1949447A4 (en) |
JP (1) | JP5199104B2 (en) |
KR (1) | KR101071793B1 (en) |
CN (1) | CN101563780B (en) |
TW (1) | TW200725888A (en) |
WO (1) | WO2007050312A2 (en) |
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US8274116B2 (en) | 2009-11-16 | 2012-09-25 | International Business Machines Corporation | Control of threshold voltages in high-k metal gate stack and structures for CMOS devices |
US8435878B2 (en) | 2010-04-06 | 2013-05-07 | International Business Machines Corporation | Field effect transistor device and fabrication |
EP2402999A1 (en) * | 2010-06-29 | 2012-01-04 | IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik | Semiconductor component, method of producing a semiconductor component, semiconductor device |
US8492247B2 (en) * | 2010-08-17 | 2013-07-23 | International Business Machines Corporation | Programmable FETs using Vt-shift effect and methods of manufacture |
JP5856827B2 (en) * | 2010-12-09 | 2016-02-10 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US8941112B2 (en) | 2010-12-28 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20120313186A1 (en) * | 2011-06-08 | 2012-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polysilicon gate with nitrogen doped high-k dielectric and silicon dioxide |
US8709883B2 (en) | 2011-08-19 | 2014-04-29 | Freescale Semiconductor, Inc. | Implant for performance enhancement of selected transistors in an integrated circuit |
TWI565062B (en) * | 2011-09-26 | 2017-01-01 | 聯華電子股份有限公司 | Semiconductor structure and fabrication method thereof |
US9000568B2 (en) * | 2011-09-26 | 2015-04-07 | United Microelectronics Corp. | Semiconductor structure and fabrication method thereof |
CN104011867B (en) | 2011-12-23 | 2016-12-07 | 英特尔公司 | III-N material structure for gate recess transistor |
US8890264B2 (en) | 2012-09-26 | 2014-11-18 | Intel Corporation | Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface |
US8768271B1 (en) | 2012-12-19 | 2014-07-01 | Intel Corporation | Group III-N transistors on nanoscale template structures |
US8900952B2 (en) * | 2013-03-11 | 2014-12-02 | International Business Machines Corporation | Gate stack including a high-k gate dielectric that is optimized for low voltage applications |
CN103887163B (en) * | 2014-04-03 | 2016-04-20 | 中国科学院半导体研究所 | For the preparation method of SiC base MOS device gate dielectric membrane |
CN108305898B (en) * | 2017-01-12 | 2020-11-24 | 立锜科技股份有限公司 | Metal oxide semiconductor element for improving threshold voltage slide and manufacturing method thereof |
CN106653862A (en) * | 2017-01-24 | 2017-05-10 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and fabrication method for thin film transistor |
JP6640762B2 (en) | 2017-01-26 | 2020-02-05 | 株式会社東芝 | Semiconductor device |
US10629749B2 (en) * | 2017-11-30 | 2020-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of treating interfacial layer on silicon germanium |
CN110391285B (en) * | 2018-04-23 | 2023-04-21 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
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2005
- 2005-10-26 US US11/259,644 patent/US7655994B2/en not_active Expired - Fee Related
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2006
- 2006-10-12 EP EP06825854A patent/EP1949447A4/en not_active Withdrawn
- 2006-10-12 WO PCT/US2006/039940 patent/WO2007050312A2/en active Application Filing
- 2006-10-12 KR KR1020087009598A patent/KR101071793B1/en not_active IP Right Cessation
- 2006-10-12 CN CN2006800391795A patent/CN101563780B/en not_active Expired - Fee Related
- 2006-10-12 JP JP2008537750A patent/JP5199104B2/en not_active Expired - Fee Related
- 2006-10-19 TW TW095138621A patent/TW200725888A/en unknown
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2008
- 2008-04-04 US US12/062,972 patent/US7858500B2/en not_active Expired - Fee Related
Patent Citations (2)
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US20040188762A1 (en) * | 2003-03-24 | 2004-09-30 | Yasuhiro Shimamoto | Semiconductor device and manufacturing method thereof |
US20050045938A1 (en) * | 2003-08-29 | 2005-03-03 | Semiconductor Leading Edge Technologies, Inc. | Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof |
Non-Patent Citations (1)
Title |
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See also references of EP1949447A4 * |
Also Published As
Publication number | Publication date |
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KR20080068811A (en) | 2008-07-24 |
JP2009514218A (en) | 2009-04-02 |
CN101563780A (en) | 2009-10-21 |
EP1949447A2 (en) | 2008-07-30 |
US20080182389A1 (en) | 2008-07-31 |
US20070090471A1 (en) | 2007-04-26 |
US7655994B2 (en) | 2010-02-02 |
KR101071793B1 (en) | 2011-10-11 |
TW200725888A (en) | 2007-07-01 |
US7858500B2 (en) | 2010-12-28 |
CN101563780B (en) | 2012-08-22 |
EP1949447A4 (en) | 2009-11-11 |
WO2007050312A2 (en) | 2007-05-03 |
JP5199104B2 (en) | 2013-05-15 |
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