WO2007052240A3 - Radio-frequency oscillator with spin-polarised electric current - Google Patents

Radio-frequency oscillator with spin-polarised electric current Download PDF

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Publication number
WO2007052240A3
WO2007052240A3 PCT/IB2006/054692 IB2006054692W WO2007052240A3 WO 2007052240 A3 WO2007052240 A3 WO 2007052240A3 IB 2006054692 W IB2006054692 W IB 2006054692W WO 2007052240 A3 WO2007052240 A3 WO 2007052240A3
Authority
WO
WIPO (PCT)
Prior art keywords
layers
magnetic
spin
layer
radio
Prior art date
Application number
PCT/IB2006/054692
Other languages
French (fr)
Other versions
WO2007052240A2 (en
Inventor
Bernard Dieny
Alina-Maria Deac-Renner
Original Assignee
Commissariat Energie Atomique
Bernard Dieny
Alina-Maria Deac-Renner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Bernard Dieny, Alina-Maria Deac-Renner filed Critical Commissariat Energie Atomique
Priority to DE602006006207T priority Critical patent/DE602006006207D1/en
Priority to JP2008538491A priority patent/JP5051726B2/en
Priority to BRPI0618122-8A priority patent/BRPI0618122A2/en
Priority to CN2006800409708A priority patent/CN101300735B/en
Priority to EP06832165A priority patent/EP1943727B1/en
Publication of WO2007052240A2 publication Critical patent/WO2007052240A2/en
Publication of WO2007052240A3 publication Critical patent/WO2007052240A3/en
Priority to US12/107,954 priority patent/US8227099B2/en
Priority to HK08114110.8A priority patent/HK1120937A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

Abstract

This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarised electric current flows. This device comprises a stack of at least: a first so-called 'anchored' magnetic layer (1) having a fixed magnetisation direction, a second magnetic layer (2), an amagnetic layer (3) inserted between the above-mentioned two layers, intended to ensure magnetic decoupling of said layers. The oscillator also comprises means of causing a flow of electrons in said layers perpendicular to these layers and, if applicable, of applying an external magnetic field to the structure. The second magnetic layer (2) has an excitation damping factor at least 10% greater than the damping measured in a simple layer of the same material having the same geometry for magnetic excitation having wavelengths equal to or less than the extent of the cone or cylinder of current that flows through the stack that constitutes the magnetoresistive device.
PCT/IB2006/054692 2005-11-02 2006-10-31 Radio-frequency oscillator with spin-polarised electric current WO2007052240A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE602006006207T DE602006006207D1 (en) 2005-11-02 2006-10-31 HIGH FREQUENCY ZOSCILLATOR WITH SPIN-POLARIZED ELECTRIC CURRENT
JP2008538491A JP5051726B2 (en) 2005-11-02 2006-10-31 Radio frequency oscillator using spin-polarized current
BRPI0618122-8A BRPI0618122A2 (en) 2005-11-02 2006-10-31 radio frequency oscillator
CN2006800409708A CN101300735B (en) 2005-11-02 2006-10-31 Radio-frequency oscillator with spin-polarised current
EP06832165A EP1943727B1 (en) 2005-11-02 2006-10-31 Radio-frequency oscillator with spin-polarised electric current
US12/107,954 US8227099B2 (en) 2005-11-02 2008-04-23 Radio-frequency oscillator with spin-polarised current
HK08114110.8A HK1120937A1 (en) 2005-11-02 2008-12-30 Radio-frequency oscillator with spin-polarised electric current

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0553321 2005-11-02
FR0553321A FR2892871B1 (en) 2005-11-02 2005-11-02 SPEED POLARIZED ELELECTIC CURRENT FREQUENCY RADIO OSCILLATOR

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/107,954 Continuation US8227099B2 (en) 2005-11-02 2008-04-23 Radio-frequency oscillator with spin-polarised current

Publications (2)

Publication Number Publication Date
WO2007052240A2 WO2007052240A2 (en) 2007-05-10
WO2007052240A3 true WO2007052240A3 (en) 2007-08-02

Family

ID=37036883

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2006/054692 WO2007052240A2 (en) 2005-11-02 2006-10-31 Radio-frequency oscillator with spin-polarised electric current

Country Status (10)

Country Link
US (1) US8227099B2 (en)
EP (1) EP1943727B1 (en)
JP (1) JP5051726B2 (en)
CN (1) CN101300735B (en)
AT (1) ATE428217T1 (en)
BR (1) BRPI0618122A2 (en)
DE (1) DE602006006207D1 (en)
FR (1) FR2892871B1 (en)
HK (1) HK1120937A1 (en)
WO (1) WO2007052240A2 (en)

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JP5036585B2 (en) * 2008-02-13 2012-09-26 株式会社東芝 Magnetic oscillation element, magnetic head having the magnetic oscillation element, and magnetic recording / reproducing apparatus
FR2929759B1 (en) * 2008-04-03 2010-04-16 Commissariat Energie Atomique MAGNETIC DEVICE INCORPORATING A MAGNETORESISTIVE STACK
FR2944384B1 (en) * 2009-04-09 2012-01-20 Commissariat Energie Atomique RADIOFREQUENCY OSCILLATOR WITH SPIN VALVE OR TUNNEL JUNCTION
US20100308923A1 (en) * 2009-06-04 2010-12-09 Seagate Technology Llc Magnetic voltage controlled oscillator
US8259409B2 (en) * 2009-06-25 2012-09-04 Hitachi Global Storage Technologies Netherlands B.V. Spin torque oscillator sensor
US8432644B2 (en) * 2009-06-25 2013-04-30 HGST Netherlands B.V. Spin torque oscillator sensor enhanced by magnetic anisotropy
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US20110058408A1 (en) * 2009-09-07 2011-03-10 Agency For Science, Technology And Research Memory cell arrangements; memory cell reader; method for determining a memory cell storage state
KR101616046B1 (en) * 2009-10-05 2016-04-27 삼성전자주식회사 Oscillator and method of operating the same
FR2952486B1 (en) 2009-11-06 2012-01-06 Commissariat Energie Atomique RADIOFREQUENCY OSCILLATOR
FR2957210B1 (en) 2010-03-03 2012-04-13 Commissariat Energie Atomique RADIOFREQUENCY OSCILLATOR AND METHOD FOR GENERATING AN OSCILLATING SIGNAL
FR2957209B1 (en) 2010-03-03 2012-04-13 Commissariat Energie Atomique RADIOFREQUENCY OSCILLATOR AND METHOD FOR GENERATING AN OSCILLATING SIGNAL
US8581672B2 (en) * 2010-05-14 2013-11-12 Nokia Corporation Frequency synthesis
KR101676809B1 (en) 2010-08-13 2016-11-16 삼성전자주식회사 Oscillator and method of operating the same
KR101676808B1 (en) 2010-08-25 2016-11-17 삼성전자 주식회사 Oscillator and method of operating the same
KR101701979B1 (en) 2010-09-02 2017-02-03 삼성전자 주식회사 Oscillator and method of operating the same
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KR101740485B1 (en) 2010-09-16 2017-05-29 삼성전자 주식회사 Oscillator and methods of manufacturing and operating the same
US8421440B2 (en) * 2010-10-25 2013-04-16 Nokia Corporation Apparatus for spectrum sensing and associated methods
KR101777264B1 (en) 2010-11-09 2017-09-12 삼성전자 주식회사 Oscillator and method of operating the same
US8525602B2 (en) * 2011-03-23 2013-09-03 Honeywell International Inc. Magnetic device with weakly exchange coupled antiferromagnetic layer
FR2974418B1 (en) 2011-04-20 2013-05-31 Commissariat Energie Atomique OSCILLATION DETECTOR
FR2974468B1 (en) 2011-04-20 2013-05-31 Commissariat Energie Atomique DEMODULATOR OF AN ELECTRICAL SIGNAL FREQUENCY MODULE
FR2974467B1 (en) 2011-04-20 2013-05-31 Commissariat Energie Atomique SYNTHESIZER OF AN OSCILLATING SIGNAL
US8462461B2 (en) * 2011-07-05 2013-06-11 HGST Netherlands B.V. Spin-torque oscillator (STO) with magnetically damped free layer
US8908424B2 (en) * 2011-10-03 2014-12-09 The Hong Kong University Of Science And Technology Magnetization switching through magnonic spin transfer torque
US9343656B2 (en) * 2012-03-02 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic tunnel junction (MTJ) structure in magnetic random access memory
US9355654B1 (en) * 2012-12-21 2016-05-31 Western Digital Technologies, Inc. Spin torque oscillator for microwave assisted magnetic recording with increased damping
KR20140135566A (en) * 2013-05-16 2014-11-26 삼성전자주식회사 Magnetoresistive element and memory device including the same
FR3020497B1 (en) 2014-04-28 2016-05-13 Commissariat Energie Atomique PERMANENT MAGNET COMPRISING A STACK OF FERROMAGNETIC AND ANTIFERROMAGNETIC LAYERS
CN105223414B (en) * 2014-06-18 2018-11-09 中国科学院苏州纳米技术与纳米仿生研究所 A kind of microwave detector of high sensitivity
CL2015003361A1 (en) * 2015-11-16 2017-08-04 Univ Santiago Chile Alternate magnetic field nanogenerator that uses a nanowire that allows it to be applied in the alternating current generation at the nanoscale level; and associated method
CN107895624B (en) * 2016-01-14 2020-01-10 青岛大学 Multilayer film with enhanced optical mode ferromagnetic resonance
FR3050068B1 (en) 2016-04-06 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives PERMANENT MAGNET COMPRISING A STACK OF N REASONS
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CN108242858A (en) * 2016-12-27 2018-07-03 中国科学院苏州纳米技术与纳米仿生研究所 A kind of New-type radio-frequency microwave energy harvester based on electron spin attribute
FR3073661B1 (en) 2017-11-10 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives PERMANENT MAGNET COMPRISING AN ANTIFERROMAGNETIC LAYER AND A FERROMAGNETIC LAYER
CN109256656B (en) * 2018-10-19 2020-04-24 山东大学 Spin torque nano oscillator and terahertz signal generator based on same
CN109411993A (en) * 2018-12-28 2019-03-01 中国工程物理研究院电子工程研究所 A kind of THz wave generator based on exchange bias magnetic field
CN114730570A (en) * 2020-05-29 2022-07-08 西部数据技术公司 Spin torque oscillator with antiferromagnetically coupled assist layer and method of operating the same

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Also Published As

Publication number Publication date
EP1943727A2 (en) 2008-07-16
ATE428217T1 (en) 2009-04-15
CN101300735B (en) 2011-11-09
JP5051726B2 (en) 2012-10-17
US8227099B2 (en) 2012-07-24
BRPI0618122A2 (en) 2011-08-16
JP2009515406A (en) 2009-04-09
EP1943727B1 (en) 2009-04-08
US20080241597A1 (en) 2008-10-02
HK1120937A1 (en) 2009-04-09
WO2007052240A2 (en) 2007-05-10
CN101300735A (en) 2008-11-05
FR2892871A1 (en) 2007-05-04
DE602006006207D1 (en) 2009-05-20
FR2892871B1 (en) 2007-11-23

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