WO2007078572A3 - Apparatus and method for controlling plasma density profile - Google Patents
Apparatus and method for controlling plasma density profile Download PDFInfo
- Publication number
- WO2007078572A3 WO2007078572A3 PCT/US2006/046780 US2006046780W WO2007078572A3 WO 2007078572 A3 WO2007078572 A3 WO 2007078572A3 US 2006046780 W US2006046780 W US 2006046780W WO 2007078572 A3 WO2007078572 A3 WO 2007078572A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power transmission
- power
- plasma density
- density profile
- transmitted
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
Abstract
A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020087014602A KR101433386B1 (en) | 2005-12-16 | 2006-12-08 | Apparatus and method for controlling plasma density profile |
CN2006800475076A CN101542712B (en) | 2005-12-16 | 2006-12-08 | Apparatus and method for controlling plasma density profile |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/303,729 | 2005-12-16 | ||
US11/303,729 US7683289B2 (en) | 2005-12-16 | 2005-12-16 | Apparatus and method for controlling plasma density profile |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007078572A2 WO2007078572A2 (en) | 2007-07-12 |
WO2007078572A3 true WO2007078572A3 (en) | 2009-02-05 |
Family
ID=38174144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/046780 WO2007078572A2 (en) | 2005-12-16 | 2006-12-08 | Apparatus and method for controlling plasma density profile |
Country Status (5)
Country | Link |
---|---|
US (2) | US7683289B2 (en) |
KR (1) | KR101433386B1 (en) |
CN (2) | CN101542712B (en) |
TW (1) | TWI348734B (en) |
WO (1) | WO2007078572A2 (en) |
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US7683289B2 (en) * | 2005-12-16 | 2010-03-23 | Lam Research Corporation | Apparatus and method for controlling plasma density profile |
US8012306B2 (en) | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
US8222156B2 (en) * | 2006-12-29 | 2012-07-17 | Lam Research Corporation | Method and apparatus for processing a substrate using plasma |
US20090236214A1 (en) | 2008-03-20 | 2009-09-24 | Karthik Janakiraman | Tunable ground planes in plasma chambers |
US8206552B2 (en) * | 2008-06-25 | 2012-06-26 | Applied Materials, Inc. | RF power delivery system in a semiconductor apparatus |
GB0823565D0 (en) * | 2008-12-24 | 2009-01-28 | Oxford Instr Plasma Technology | Signal generating system |
US8702774B2 (en) | 2009-04-30 | 2014-04-22 | Zeltiq Aesthetics, Inc. | Device, system and method of removing heat from subcutaneous lipid-rich cells |
US8507855B2 (en) * | 2011-07-28 | 2013-08-13 | Applied Materials Israel, Ltd. | Inductive modulation of focusing voltage in charged beam system |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
CN104024477B (en) * | 2011-11-23 | 2016-05-18 | 朗姆研究公司 | Multizone gas inject upper electrode system |
US9114666B2 (en) * | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
TWI599272B (en) * | 2012-09-14 | 2017-09-11 | 蘭姆研究公司 | Adjustment of power and frequency based on three or more states |
KR102120628B1 (en) | 2012-09-26 | 2020-06-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Bottom and side plasma tuning having closed loop control |
US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
US9053908B2 (en) * | 2013-09-19 | 2015-06-09 | Lam Research Corporation | Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching |
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TWI677009B (en) * | 2016-01-24 | 2019-11-11 | 美商應用材料股份有限公司 | Dual-feed tunable plasma source |
JP2017134950A (en) * | 2016-01-26 | 2017-08-03 | 東京エレクトロン株式会社 | Plasma processing apparatus and control method |
KR102487342B1 (en) | 2016-06-14 | 2023-01-13 | 삼성전자주식회사 | Electrostatic chuck and a plasma apparatus for processing substrates having the same |
JP6869034B2 (en) * | 2017-01-17 | 2021-05-12 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP2018129224A (en) | 2017-02-09 | 2018-08-16 | 東京エレクトロン株式会社 | Plasma processing apparatus |
WO2018187679A1 (en) | 2017-04-07 | 2018-10-11 | Applied Materials, Inc. | Plasma density control on substrate edge |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
KR102475069B1 (en) | 2017-06-30 | 2022-12-06 | 삼성전자주식회사 | Semiconductor manufacturing device, method for operating the same |
US10892142B2 (en) | 2018-03-16 | 2021-01-12 | Samsung Electronics Co., Ltd. | System for fabricating a semiconductor device |
US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
US11183368B2 (en) * | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
US20220375719A1 (en) * | 2019-11-15 | 2022-11-24 | Lam Research Corporation | Frequency based impedance adjustment in tuning circuits |
CN112530773B (en) * | 2020-11-27 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6962664B2 (en) * | 2000-01-10 | 2005-11-08 | Tokyo Electron Limited | Controlled method for segmented electrode apparatus and method for plasma processing |
Family Cites Families (13)
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US5847918A (en) * | 1995-09-29 | 1998-12-08 | Lam Research Corporation | Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors |
US5998932A (en) * | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
US6259334B1 (en) * | 1998-12-22 | 2001-07-10 | Lam Research Corporation | Methods for controlling an RF matching network |
TW506234B (en) * | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
US6741446B2 (en) * | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
WO2002097855A1 (en) * | 2001-05-29 | 2002-12-05 | Tokyo Electron Limited | Plasma processing apparatus and method |
US6770166B1 (en) * | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
KR100486712B1 (en) * | 2002-09-04 | 2005-05-03 | 삼성전자주식회사 | Inductively coupled plasma generating apparatus with double layer coil antenna |
US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
US7144521B2 (en) * | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
US7767055B2 (en) * | 2004-12-03 | 2010-08-03 | Tokyo Electron Limited | Capacitive coupling plasma processing apparatus |
US7683289B2 (en) * | 2005-12-16 | 2010-03-23 | Lam Research Corporation | Apparatus and method for controlling plasma density profile |
-
2005
- 2005-12-16 US US11/303,729 patent/US7683289B2/en active Active
-
2006
- 2006-12-08 KR KR1020087014602A patent/KR101433386B1/en active IP Right Grant
- 2006-12-08 CN CN2006800475076A patent/CN101542712B/en active Active
- 2006-12-08 CN CN2010106099224A patent/CN102097273A/en active Pending
- 2006-12-08 WO PCT/US2006/046780 patent/WO2007078572A2/en active Application Filing
- 2006-12-18 TW TW095147444A patent/TWI348734B/en active
-
2010
- 2010-01-29 US US12/697,057 patent/US8299390B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6962664B2 (en) * | 2000-01-10 | 2005-11-08 | Tokyo Electron Limited | Controlled method for segmented electrode apparatus and method for plasma processing |
Also Published As
Publication number | Publication date |
---|---|
US7683289B2 (en) | 2010-03-23 |
CN101542712A (en) | 2009-09-23 |
TWI348734B (en) | 2011-09-11 |
US20100126847A1 (en) | 2010-05-27 |
KR20080077202A (en) | 2008-08-21 |
US8299390B2 (en) | 2012-10-30 |
KR101433386B1 (en) | 2014-08-26 |
CN101542712B (en) | 2011-02-09 |
CN102097273A (en) | 2011-06-15 |
TW200733231A (en) | 2007-09-01 |
WO2007078572A2 (en) | 2007-07-12 |
US20070141729A1 (en) | 2007-06-21 |
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