WO2007095189A3 - Electromagnet with active field containment - Google Patents

Electromagnet with active field containment Download PDF

Info

Publication number
WO2007095189A3
WO2007095189A3 PCT/US2007/003700 US2007003700W WO2007095189A3 WO 2007095189 A3 WO2007095189 A3 WO 2007095189A3 US 2007003700 W US2007003700 W US 2007003700W WO 2007095189 A3 WO2007095189 A3 WO 2007095189A3
Authority
WO
WIPO (PCT)
Prior art keywords
electromagnet
box structure
active field
opposing
opposing side
Prior art date
Application number
PCT/US2007/003700
Other languages
French (fr)
Other versions
WO2007095189A2 (en
Inventor
Peter L Kellerman
Kenneth H Purser
Original Assignee
Varian Semiconductor Equipment
Peter L Kellerman
Kenneth H Purser
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment, Peter L Kellerman, Kenneth H Purser filed Critical Varian Semiconductor Equipment
Priority to KR1020087021805A priority Critical patent/KR101324953B1/en
Priority to JP2008555300A priority patent/JP5149203B2/en
Priority to CN2007800053399A priority patent/CN101385112B/en
Publication of WO2007095189A2 publication Critical patent/WO2007095189A2/en
Publication of WO2007095189A3 publication Critical patent/WO2007095189A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0042—Deflection of neutralising particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/141—Coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/142—Lenses magnetic with superconducting coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1508—Combined electrostatic-electromagnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.
PCT/US2007/003700 2006-02-15 2007-02-13 Electromagnet with active field containment WO2007095189A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020087021805A KR101324953B1 (en) 2006-02-15 2007-02-13 Electromagnet with active field containment
JP2008555300A JP5149203B2 (en) 2006-02-15 2007-02-13 Electromagnet, ion implantation system, filtering system for ion implantation system, electromagnet used for mass spectrometry, and method for confining magnetic field of aperture frame type electromagnet
CN2007800053399A CN101385112B (en) 2006-02-15 2007-02-13 Electromagnet with active field containment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/276,128 US7800082B2 (en) 2006-02-15 2006-02-15 Electromagnet with active field containment
US11/276,128 2006-02-15

Publications (2)

Publication Number Publication Date
WO2007095189A2 WO2007095189A2 (en) 2007-08-23
WO2007095189A3 true WO2007095189A3 (en) 2008-01-17

Family

ID=38367427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/003700 WO2007095189A2 (en) 2006-02-15 2007-02-13 Electromagnet with active field containment

Country Status (6)

Country Link
US (1) US7800082B2 (en)
JP (1) JP5149203B2 (en)
KR (1) KR101324953B1 (en)
CN (1) CN101385112B (en)
TW (1) TWI397095B (en)
WO (1) WO2007095189A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528390B2 (en) * 2006-09-29 2009-05-05 Axcelis Technologies, Inc. Broad beam ion implantation architecture
US7772571B2 (en) * 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
US8008636B2 (en) * 2008-12-18 2011-08-30 Axcelis Technologies, Inc. Ion implantation with diminished scanning field effects
US8637838B2 (en) * 2011-12-13 2014-01-28 Axcelis Technologies, Inc. System and method for ion implantation with improved productivity and uniformity
US8841631B1 (en) * 2013-06-26 2014-09-23 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for controlling ion angular spread
US9978556B2 (en) * 2015-12-11 2018-05-22 Varian Semiconductor Equipment Associates, Inc. Parallelizing electrostatic acceleration/deceleration optical element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0926699A1 (en) * 1997-10-22 1999-06-30 Nissin Electric Co., Ltd. Method and apparatus for deflecting charged particles
US6403967B1 (en) * 1999-10-15 2002-06-11 Advanced Ion Beam Technology, Inc. Magnet system for an ion beam implantation system using high perveance beams

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174099A (en) * 1988-12-27 1990-07-05 Mitsubishi Electric Corp Superconductive deflecting electromagnet
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
US6341574B1 (en) * 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US6289681B1 (en) * 1999-11-17 2001-09-18 General Electric Company Superconducting magnet split cryostat interconnect assembly
US20020050569A1 (en) * 2000-10-20 2002-05-02 Berrian Donald W. Magnetic scanning system with a nonzero field
JP3869680B2 (en) * 2001-05-29 2007-01-17 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー Ion implanter
JP2004152557A (en) * 2002-10-30 2004-05-27 Mitsubishi Electric Corp Analyzing magnet for ion implantation device
US6881966B2 (en) * 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
US6770888B1 (en) * 2003-05-15 2004-08-03 Axcelis Technologies, Inc. High mass resolution magnet for ribbon beam ion implanters
US7112789B2 (en) * 2004-05-18 2006-09-26 White Nicholas R High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams
US20060017010A1 (en) * 2004-07-22 2006-01-26 Axcelis Technologies, Inc. Magnet for scanning ion beams

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0926699A1 (en) * 1997-10-22 1999-06-30 Nissin Electric Co., Ltd. Method and apparatus for deflecting charged particles
US6403967B1 (en) * 1999-10-15 2002-06-11 Advanced Ion Beam Technology, Inc. Magnet system for an ion beam implantation system using high perveance beams

Also Published As

Publication number Publication date
US7800082B2 (en) 2010-09-21
KR101324953B1 (en) 2013-11-04
JP5149203B2 (en) 2013-02-20
TW200737274A (en) 2007-10-01
WO2007095189A2 (en) 2007-08-23
KR20080100357A (en) 2008-11-17
CN101385112A (en) 2009-03-11
TWI397095B (en) 2013-05-21
CN101385112B (en) 2011-04-20
US20070187619A1 (en) 2007-08-16
JP2009527100A (en) 2009-07-23

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