WO2007100457A3 - Electrical conditioning of mems device and insulating layer thereof - Google Patents

Electrical conditioning of mems device and insulating layer thereof Download PDF

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Publication number
WO2007100457A3
WO2007100457A3 PCT/US2007/003267 US2007003267W WO2007100457A3 WO 2007100457 A3 WO2007100457 A3 WO 2007100457A3 US 2007003267 W US2007003267 W US 2007003267W WO 2007100457 A3 WO2007100457 A3 WO 2007100457A3
Authority
WO
WIPO (PCT)
Prior art keywords
insulating layer
mems device
electrical conditioning
conditioning
layer
Prior art date
Application number
PCT/US2007/003267
Other languages
French (fr)
Other versions
WO2007100457A2 (en
Inventor
Chen-Jean Chou
Chun-Chen Wu
Patrick F Brinkley
Original Assignee
Qualcomm Inc
Chen-Jean Chou
Chun-Chen Wu
Patrick F Brinkley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc, Chen-Jean Chou, Chun-Chen Wu, Patrick F Brinkley filed Critical Qualcomm Inc
Priority to CN200780006450XA priority Critical patent/CN101389566B/en
Priority to JP2008556347A priority patent/JP4970470B2/en
Publication of WO2007100457A2 publication Critical patent/WO2007100457A2/en
Publication of WO2007100457A3 publication Critical patent/WO2007100457A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/004—Testing during manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00714—Treatment for improving the physical properties not provided for in groups B81C1/0065 - B81C1/00706
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q11/00—Selecting arrangements for multiplex systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0107—Sacrificial metal

Abstract

A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.
PCT/US2007/003267 2006-02-22 2007-02-07 Electrical conditioning of mems device and insulating layer thereof WO2007100457A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200780006450XA CN101389566B (en) 2006-02-22 2007-02-07 Electrical conditioning of mems device and insulating layer thereof
JP2008556347A JP4970470B2 (en) 2006-02-22 2007-02-07 Electrical adjustment of MEMS device and its insulating layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/360,131 2006-02-22
US11/360,131 US7547568B2 (en) 2006-02-22 2006-02-22 Electrical conditioning of MEMS device and insulating layer thereof

Publications (2)

Publication Number Publication Date
WO2007100457A2 WO2007100457A2 (en) 2007-09-07
WO2007100457A3 true WO2007100457A3 (en) 2007-12-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/003267 WO2007100457A2 (en) 2006-02-22 2007-02-07 Electrical conditioning of mems device and insulating layer thereof

Country Status (6)

Country Link
US (2) US7547568B2 (en)
JP (1) JP4970470B2 (en)
KR (1) KR20080106932A (en)
CN (1) CN101389566B (en)
TW (1) TW200744938A (en)
WO (1) WO2007100457A2 (en)

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US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US20080040027A1 (en) * 2006-08-09 2008-02-14 Val Brooks-Kennedy Trip Tracker
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US8068268B2 (en) 2007-07-03 2011-11-29 Qualcomm Mems Technologies, Inc. MEMS devices having improved uniformity and methods for making them
CN101755232A (en) * 2007-07-25 2010-06-23 高通Mems科技公司 Mems display devices and methods of fabricating the same
US7863079B2 (en) * 2008-02-05 2011-01-04 Qualcomm Mems Technologies, Inc. Methods of reducing CD loss in a microelectromechanical device
US7851239B2 (en) * 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7864403B2 (en) 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
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US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8742570B2 (en) * 2011-09-09 2014-06-03 Qualcomm Mems Technologies, Inc. Backplate interconnect with integrated passives
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US9810581B1 (en) * 2014-07-28 2017-11-07 MP High Tech Solutions Pty Ltd Micromechanical device for electromagnetic radiation sensing
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