WO2007109498A3 - Wideband ultra low noise amplifier - Google Patents

Wideband ultra low noise amplifier Download PDF

Info

Publication number
WO2007109498A3
WO2007109498A3 PCT/US2007/064052 US2007064052W WO2007109498A3 WO 2007109498 A3 WO2007109498 A3 WO 2007109498A3 US 2007064052 W US2007064052 W US 2007064052W WO 2007109498 A3 WO2007109498 A3 WO 2007109498A3
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
amplifier
low noise
noise amplifier
ultra low
Prior art date
Application number
PCT/US2007/064052
Other languages
French (fr)
Other versions
WO2007109498A2 (en
Inventor
Aly Ismail
Edward Youssoufian
Original Assignee
Newport Media Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Newport Media Inc filed Critical Newport Media Inc
Publication of WO2007109498A2 publication Critical patent/WO2007109498A2/en
Publication of WO2007109498A3 publication Critical patent/WO2007109498A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/151—A source follower being used in a feedback circuit of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/72—Indexing scheme relating to amplifiers the amplifier stage being a common gate configuration MOSFET

Abstract

A circuit and method of reducing noise in the circuit comprises a first transistor and an amplifier operatively connected to the first transistor, wherein the amplifier comprises a plurality of transistors and is adapted to amplify an input signal, and wherein the input signal is differentially captured at an output of the first transistor and the amplifier. Preferably, the plurality of transistors comprises a second transistor and a third transistor. Furthermore, a noise level of the first transistor and the third transistor are preferably cancelled. The size of the second transistor may be approximately 1/50Ω. Preferably, a gain on an amplifier stage formed by the second transistor and the third transistor is adapted to be increased. Moreover, an equivalent transconductance of the amplifier is preferably independent of an impedance matching on the amplifier. Preferably, a noise figure level of the circuit is less than approximately IdB.
PCT/US2007/064052 2006-03-16 2007-03-15 Wideband ultra low noise amplifier WO2007109498A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/377,824 2006-03-16
US11/377,824 US7378911B2 (en) 2006-03-16 2006-03-16 Wideband ultra low noise amplifier

Publications (2)

Publication Number Publication Date
WO2007109498A2 WO2007109498A2 (en) 2007-09-27
WO2007109498A3 true WO2007109498A3 (en) 2008-10-30

Family

ID=38517184

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/064052 WO2007109498A2 (en) 2006-03-16 2007-03-15 Wideband ultra low noise amplifier

Country Status (3)

Country Link
US (1) US7378911B2 (en)
TW (1) TWI346448B (en)
WO (1) WO2007109498A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988460B1 (en) * 2008-09-05 2010-10-20 한국전자통신연구원 wideband low noise amplifier
US8410856B2 (en) 2010-12-17 2013-04-02 Industrial Technology Research Institute Method and apparatus for canceling balun amplifier noise
CN105515537B (en) 2014-09-25 2020-12-29 中兴通讯股份有限公司 Multi-frequency tunable low-noise amplifier and multi-frequency tuning implementation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956615A (en) * 1988-07-20 1990-09-11 Deutsche Thomson-Brandt Gmbh Input circuit for high-frequency amplifiers
US5465072A (en) * 1994-08-05 1995-11-07 Linear Technology Corporation Tunable operational transcondunctance amplifier having high linearity
US6366171B1 (en) * 2000-04-06 2002-04-02 Texas Instruments Incorporated Single-to-differential low noise amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956615A (en) * 1988-07-20 1990-09-11 Deutsche Thomson-Brandt Gmbh Input circuit for high-frequency amplifiers
US5465072A (en) * 1994-08-05 1995-11-07 Linear Technology Corporation Tunable operational transcondunctance amplifier having high linearity
US6366171B1 (en) * 2000-04-06 2002-04-02 Texas Instruments Incorporated Single-to-differential low noise amplifier

Also Published As

Publication number Publication date
US20070216486A1 (en) 2007-09-20
TWI346448B (en) 2011-08-01
TW200737694A (en) 2007-10-01
US7378911B2 (en) 2008-05-27
WO2007109498A2 (en) 2007-09-27

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