WO2007111688A3 - Method and apparatus for programming/erasing a non-volatile memory - Google Patents

Method and apparatus for programming/erasing a non-volatile memory Download PDF

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Publication number
WO2007111688A3
WO2007111688A3 PCT/US2006/060671 US2006060671W WO2007111688A3 WO 2007111688 A3 WO2007111688 A3 WO 2007111688A3 US 2006060671 W US2006060671 W US 2006060671W WO 2007111688 A3 WO2007111688 A3 WO 2007111688A3
Authority
WO
WIPO (PCT)
Prior art keywords
read current
voltage thresholds
program
volatile memory
erase cycle
Prior art date
Application number
PCT/US2006/060671
Other languages
French (fr)
Other versions
WO2007111688A2 (en
Inventor
Mohammed Suhail
Original Assignee
Freescale Semiconductor Inc
Mohammed Suhail
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Mohammed Suhail filed Critical Freescale Semiconductor Inc
Priority to KR1020087012943A priority Critical patent/KR101285576B1/en
Priority to JP2008543553A priority patent/JP5160441B2/en
Priority to CN2006800442547A priority patent/CN101317231B/en
Publication of WO2007111688A2 publication Critical patent/WO2007111688A2/en
Publication of WO2007111688A3 publication Critical patent/WO2007111688A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention

Abstract

An integrated circuit (10) having non-volatile memory (NVM) (14) includes a threshold selector (28) which selects a first one of a plurality of read current/voltage thresholds during a first portion of a program/erase cycle, and which selects a second one of a plurality of read current/voltage thresholds during a second portion of said program/erase cycle, wherein the first one of a plurality of read current/voltage thresholds and the second one of a plurality of read current/voltage thresholds are different. The first portion of the program/erase cycle occurs in time before the second portion of the program/erase cycle. The second one of the plurality of read current/voltage thresholds is less than the first one of the plurality of read current/voltage thresholds.
PCT/US2006/060671 2005-11-30 2006-11-08 Method and apparatus for programming/erasing a non-volatile memory WO2007111688A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020087012943A KR101285576B1 (en) 2005-11-30 2006-11-08 Method and apparatus for programming/erasing a non-volatile memory
JP2008543553A JP5160441B2 (en) 2005-11-30 2006-11-08 Method and apparatus for programming / erasing non-volatile memory
CN2006800442547A CN101317231B (en) 2005-11-30 2006-11-08 Method and apparatus for programming/erasing a non-volatile memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/290,321 US7236402B2 (en) 2005-11-30 2005-11-30 Method and apparatus for programming/erasing a non-volatile memory
US11/290,321 2005-11-30

Publications (2)

Publication Number Publication Date
WO2007111688A2 WO2007111688A2 (en) 2007-10-04
WO2007111688A3 true WO2007111688A3 (en) 2008-04-24

Family

ID=38087275

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/060671 WO2007111688A2 (en) 2005-11-30 2006-11-08 Method and apparatus for programming/erasing a non-volatile memory

Country Status (6)

Country Link
US (1) US7236402B2 (en)
JP (1) JP5160441B2 (en)
KR (1) KR101285576B1 (en)
CN (1) CN101317231B (en)
TW (1) TWI435330B (en)
WO (1) WO2007111688A2 (en)

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* Cited by examiner, † Cited by third party
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FR2874732A1 (en) * 2004-08-31 2006-03-03 St Microelectronics Sa METHOD FOR PROGRAMMING MEMORY CELLS INCLUDING DETECTION OF TRANSCONDUCTANCE DEGRADATION
US7397703B2 (en) * 2006-03-21 2008-07-08 Freescale Semiconductor, Inc. Non-volatile memory with controlled program/erase
US20090199058A1 (en) * 2008-02-06 2009-08-06 Christoph Seidl Programmable memory with reliability testing of the stored data
US7903462B1 (en) * 2008-04-04 2011-03-08 Link A Media Devices Corporation E/P durability by using a sub-range of a full programming range
KR101423612B1 (en) * 2008-09-16 2014-07-25 삼성전자주식회사 Nonvolatile memory device and operating method thereof, and memory system including the same
KR101005117B1 (en) * 2009-01-23 2011-01-04 주식회사 하이닉스반도체 Operating method of non volatile memory device
KR101038991B1 (en) * 2009-03-10 2011-06-03 주식회사 하이닉스반도체 Solid State Storage System For Even Using Of Memory Area and Controlling Method thereof
US8264890B2 (en) * 2009-04-09 2012-09-11 Sandisk Technologies Inc. Two pass erase for non-volatile storage
KR20110126408A (en) 2010-05-17 2011-11-23 삼성전자주식회사 Nonvolatile memory device, memory system having its and programming method thereof
CN102034539A (en) * 2010-10-25 2011-04-27 上海宏力半导体制造有限公司 Method for programming/erasing nanocrystalline device
US8705283B2 (en) * 2011-07-13 2014-04-22 Vincenzo Ferragina Erase techniques and circuits therefor for non-volatile memory devices
CN103390424A (en) * 2012-05-08 2013-11-13 北京兆易创新科技股份有限公司 Erasing/programming method and device of memory
CN103632725B (en) * 2012-08-24 2016-08-10 北京兆易创新科技股份有限公司 The method for deleting of a kind of flash memory and device
US9225356B2 (en) * 2012-11-12 2015-12-29 Freescale Semiconductor, Inc. Programming a non-volatile memory (NVM) system having error correction code (ECC)
US9564216B2 (en) * 2015-01-30 2017-02-07 Macronix International Co., Ltd. Stress trim and modified ISPP procedures for PCM
US9679652B2 (en) * 2015-05-04 2017-06-13 Phison Electronics Corp. Threshold based multi-level cell programming for reliability improvement
CN107665724A (en) * 2016-07-27 2018-02-06 北京兆易创新科技股份有限公司 A kind of method for deleting of memory cell
US10297324B2 (en) * 2017-05-25 2019-05-21 Western Digital Technologies, Inc. Physical secure erase of solid state drives

Citations (2)

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US20030076710A1 (en) * 2001-10-24 2003-04-24 Yair Sofer Method for erasing a memory cell
US20040196695A1 (en) * 2003-04-04 2004-10-07 Renesas Technology Corp. Nonvolatile memory device and semiconductor device

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US4943948A (en) * 1986-06-05 1990-07-24 Motorola, Inc. Program check for a non-volatile memory
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3348466B2 (en) * 1992-06-09 2002-11-20 セイコーエプソン株式会社 Nonvolatile semiconductor device
JPH10228784A (en) * 1997-02-12 1998-08-25 Mitsubishi Electric Corp Non-volatile semiconductor memory
JP3781240B2 (en) * 1998-09-07 2006-05-31 株式会社ルネサステクノロジ Nonvolatile semiconductor memory and semiconductor integrated circuit incorporating the same
US6400603B1 (en) * 2000-05-03 2002-06-04 Advanced Technology Materials, Inc. Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
JP2001319486A (en) * 2000-05-12 2001-11-16 Mitsubishi Electric Corp Non-volatile semiconductor memory
JP2002100192A (en) * 2000-09-22 2002-04-05 Toshiba Corp Non-volatile semiconductor memory
JP4040405B2 (en) * 2002-09-20 2008-01-30 富士通株式会社 Nonvolatile semiconductor memory cell control method and nonvolatile semiconductor memory device
KR100496866B1 (en) * 2002-12-05 2005-06-22 삼성전자주식회사 Flash memory device having uniform threshold voltage distribution without under-programed or over-programed flash cells and program verify method thereof
JP2005276428A (en) * 2005-04-11 2005-10-06 Toshiba Corp Nonvolatile semiconductor storage device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030076710A1 (en) * 2001-10-24 2003-04-24 Yair Sofer Method for erasing a memory cell
US20040196695A1 (en) * 2003-04-04 2004-10-07 Renesas Technology Corp. Nonvolatile memory device and semiconductor device

Also Published As

Publication number Publication date
TW200733117A (en) 2007-09-01
US20070121387A1 (en) 2007-05-31
US7236402B2 (en) 2007-06-26
KR101285576B1 (en) 2013-07-15
CN101317231B (en) 2012-03-07
KR20080080511A (en) 2008-09-04
CN101317231A (en) 2008-12-03
WO2007111688A2 (en) 2007-10-04
JP5160441B2 (en) 2013-03-13
JP2009518766A (en) 2009-05-07
TWI435330B (en) 2014-04-21

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