WO2007111771A2 - Method of forming field effect transistors and methods of forming integrated circuity comprising a transistor gate array and circuity peripheral to the gate array - Google Patents
Method of forming field effect transistors and methods of forming integrated circuity comprising a transistor gate array and circuity peripheral to the gate array Download PDFInfo
- Publication number
- WO2007111771A2 WO2007111771A2 PCT/US2007/001953 US2007001953W WO2007111771A2 WO 2007111771 A2 WO2007111771 A2 WO 2007111771A2 US 2007001953 W US2007001953 W US 2007001953W WO 2007111771 A2 WO2007111771 A2 WO 2007111771A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gate
- masking
- trenches
- forming
- array
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 123
- 230000002093 peripheral effect Effects 0.000 title claims abstract description 75
- 230000005669 field effect Effects 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 445
- 230000000873 masking effect Effects 0.000 claims abstract description 155
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000002955 isolation Methods 0.000 claims abstract description 42
- 239000003989 dielectric material Substances 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims description 82
- 230000008021 deposition Effects 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 239000011800 void material Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 239000012634 fragment Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07749192.6A EP1979937B1 (en) | 2006-02-02 | 2007-01-23 | Methods of forming field effect transistors and methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array |
JP2008553261A JP5163959B2 (en) | 2006-02-02 | 2007-01-23 | Method of forming a field effect transistor and method of forming an integrated circuit including a transistor gate array and a gate array peripheral circuit |
CN2007800037288A CN101375381B (en) | 2006-02-02 | 2007-01-23 | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/346,914 US7700441B2 (en) | 2006-02-02 | 2006-02-02 | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
US11/346,914 | 2006-02-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007111771A2 true WO2007111771A2 (en) | 2007-10-04 |
WO2007111771A3 WO2007111771A3 (en) | 2007-12-21 |
Family
ID=38093430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/001953 WO2007111771A2 (en) | 2006-02-02 | 2007-01-23 | Method of forming field effect transistors and methods of forming integrated circuity comprising a transistor gate array and circuity peripheral to the gate array |
Country Status (8)
Country | Link |
---|---|
US (3) | US7700441B2 (en) |
EP (1) | EP1979937B1 (en) |
JP (1) | JP5163959B2 (en) |
KR (1) | KR101010475B1 (en) |
CN (2) | CN101375381B (en) |
SG (2) | SG169367A1 (en) |
TW (1) | TWI385734B (en) |
WO (1) | WO2007111771A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009141286A (en) * | 2007-12-10 | 2009-06-25 | Elpida Memory Inc | Semiconductor device, and manufacturing method of semiconductor device |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547945B2 (en) | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
US7384849B2 (en) | 2005-03-25 | 2008-06-10 | Micron Technology, Inc. | Methods of forming recessed access devices associated with semiconductor constructions |
US7282401B2 (en) | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
US7700441B2 (en) * | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
US7602001B2 (en) | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
US7772632B2 (en) | 2006-08-21 | 2010-08-10 | Micron Technology, Inc. | Memory arrays and methods of fabricating memory arrays |
US7589995B2 (en) * | 2006-09-07 | 2009-09-15 | Micron Technology, Inc. | One-transistor memory cell with bias gate |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8859367B2 (en) | 2010-07-09 | 2014-10-14 | Micron Technology, Inc. | Gate constructions of recessed access devices and methods of forming gate constructions of recessed access devices |
KR101129922B1 (en) * | 2010-07-15 | 2012-03-23 | 주식회사 하이닉스반도체 | Semiconductor device and method for forming the same |
KR101205118B1 (en) * | 2011-03-11 | 2012-11-26 | 에스케이하이닉스 주식회사 | Semiconductor Device and Method for Manufacturing the same |
US9673102B2 (en) * | 2011-04-01 | 2017-06-06 | Micron Technology, Inc. | Methods of forming vertical field-effect transistor with self-aligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby |
KR20130064290A (en) * | 2011-12-08 | 2013-06-18 | 에스케이하이닉스 주식회사 | Semiconductor device and method for manufacturing the same |
JP6299102B2 (en) * | 2012-08-07 | 2018-03-28 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
CN109427808B (en) * | 2017-08-30 | 2021-04-02 | 旺宏电子股份有限公司 | Semiconductor memory element and method for manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5869359A (en) | 1997-08-20 | 1999-02-09 | Prabhakar; Venkatraman | Process for forming silicon on insulator devices having elevated source and drain regions |
US20040222458A1 (en) | 2003-05-06 | 2004-11-11 | Mosel Vitelic, Inc. | Termination structure for trench DMOS device and method of making the same |
WO2005083770A1 (en) | 2004-03-02 | 2005-09-09 | Tae-Pok Rhee | Semiconductor device of high breakdown voltage and manufacturing method thereof |
Family Cites Families (294)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681974A (en) | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of mos type semiconductor device |
KR920010461B1 (en) | 1983-09-28 | 1992-11-28 | 가부시끼가이샤 히다찌세이사꾸쇼 | Semiconductor memory |
EP0203146B1 (en) * | 1984-11-27 | 1989-05-24 | AT&T Corp. | Trench transistor |
GB2190789B (en) | 1986-04-17 | 1990-05-09 | Plessey Co Plc | System for optically coupling components of integrated circuits |
US4722910A (en) | 1986-05-27 | 1988-02-02 | Analog Devices, Inc. | Partially self-aligned metal contact process |
US4835741A (en) | 1986-06-02 | 1989-05-30 | Texas Instruments Incorporated | Frasable electrically programmable read only memory cell using a three dimensional trench floating gate |
US5160491A (en) | 1986-10-21 | 1992-11-03 | Texas Instruments Incorporated | Method of making a vertical MOS transistor |
JPS63183691A (en) | 1987-01-26 | 1988-07-29 | Mitsubishi Electric Corp | Semiconductor storage device |
FR2625044B1 (en) * | 1987-12-18 | 1990-08-31 | Commissariat Energie Atomique | TRANSISTOR MOS WITH END OF DIELECTRIC INTERFACE OF GRID / RAISED SUBSTRATE AND MANUFACTURING METHOD THEREOF |
US4979004A (en) | 1988-01-29 | 1990-12-18 | Texas Instruments Incorporated | Floating gate memory cell and device |
US4931409A (en) | 1988-01-30 | 1990-06-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device having trench isolation |
US5014110A (en) | 1988-06-03 | 1991-05-07 | Mitsubishi Denki Kabushiki Kaisha | Wiring structures for semiconductor memory device |
JPH0294477A (en) | 1988-09-30 | 1990-04-05 | Toshiba Corp | Semiconductor device and manufacture thereof |
US5108938A (en) | 1989-03-21 | 1992-04-28 | Grumman Aerospace Corporation | Method of making a trench gate complimentary metal oxide semiconductor transistor |
US5021355A (en) | 1989-05-22 | 1991-06-04 | International Business Machines Corporation | Method of fabricating cross-point lightly-doped drain-source trench transistor |
US5107459A (en) | 1990-04-20 | 1992-04-21 | International Business Machines Corporation | Stacked bit-line architecture for high density cross-point memory cell array |
JPH0834302B2 (en) | 1990-04-21 | 1996-03-29 | 株式会社東芝 | Semiconductor memory device |
US5013680A (en) | 1990-07-18 | 1991-05-07 | Micron Technology, Inc. | Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography |
US5244824A (en) | 1990-09-05 | 1993-09-14 | Motorola, Inc. | Trench capacitor and transistor structure and method for making the same |
US5047117A (en) | 1990-09-26 | 1991-09-10 | Micron Technology, Inc. | Method of forming a narrow self-aligned, annular opening in a masking layer |
US5289030A (en) | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
US5122848A (en) | 1991-04-08 | 1992-06-16 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
KR940006679B1 (en) | 1991-09-26 | 1994-07-25 | 현대전자산업 주식회사 | Dram cell having a vertical transistor and fabricating method thereof |
US5467305A (en) | 1992-03-12 | 1995-11-14 | International Business Machines Corporation | Three-dimensional direct-write EEPROM arrays and fabrication methods |
US5573837A (en) | 1992-04-22 | 1996-11-12 | Micron Technology, Inc. | Masking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layer |
US5254218A (en) | 1992-04-22 | 1993-10-19 | Micron Technology, Inc. | Masking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layer |
JP2748072B2 (en) | 1992-07-03 | 1998-05-06 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
US5281548A (en) | 1992-07-28 | 1994-01-25 | Micron Technology, Inc. | Plug-based floating gate memory |
JP2889061B2 (en) | 1992-09-25 | 1999-05-10 | ローム株式会社 | Semiconductor storage device and method of manufacturing the same |
JP3311070B2 (en) | 1993-03-15 | 2002-08-05 | 株式会社東芝 | Semiconductor device |
US5358879A (en) | 1993-04-30 | 1994-10-25 | Loral Federal Systems Company | Method of making gate overlapped lightly doped drain for buried channel devices |
WO1994027325A1 (en) * | 1993-05-07 | 1994-11-24 | Vlsi Technology, Inc. | Integrated circuit structure and method |
JPH0778977A (en) * | 1993-09-09 | 1995-03-20 | Toshiba Corp | Semiconductor device |
KR0141218B1 (en) | 1993-11-24 | 1998-07-15 | 윤종용 | Fabrication method of semkonductor device |
US5514604A (en) | 1993-12-08 | 1996-05-07 | General Electric Company | Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making |
US5532089A (en) | 1993-12-23 | 1996-07-02 | International Business Machines Corporation | Simplified fabrication methods for rim phase-shift masks |
KR100362751B1 (en) | 1994-01-19 | 2003-02-11 | 소니 가부시끼 가이샤 | Contact hole and method for forming the semiconductor device |
US5964750A (en) | 1994-03-15 | 1999-10-12 | Medolas Gesellschaft Fuer Medizintechnik Gmbh | Laser catheter for bypass surgery |
JP2658870B2 (en) | 1994-04-22 | 1997-09-30 | 日本電気株式会社 | Semiconductor memory device and method of manufacturing the same |
US5413949A (en) | 1994-04-26 | 1995-05-09 | United Microelectronics Corporation | Method of making self-aligned MOSFET |
US5446299A (en) | 1994-04-29 | 1995-08-29 | International Business Machines Corporation | Semiconductor random access memory cell on silicon-on-insulator with dual control gates |
US5841611A (en) | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
KR0151195B1 (en) | 1994-09-13 | 1998-10-01 | 문정환 | Thin film transistor |
US5753947A (en) | 1995-01-20 | 1998-05-19 | Micron Technology, Inc. | Very high-density DRAM cell structure and method for fabricating it |
US5574621A (en) | 1995-03-27 | 1996-11-12 | Motorola, Inc. | Integrated circuit capacitor having a conductive trench |
US5567634A (en) * | 1995-05-01 | 1996-10-22 | National Semiconductor Corporation | Method of fabricating self-aligned contact trench DMOS transistors |
DE19519160C1 (en) | 1995-05-24 | 1996-09-12 | Siemens Ag | DRAM cell arrangement having packing density required for specified memory |
DE19524092C2 (en) | 1995-07-01 | 1997-08-07 | Hewlett Packard Gmbh | Method and device for compressing and displaying digital data, in particular the heart rate of cardiotocographs |
JPH0982918A (en) | 1995-09-19 | 1997-03-28 | Toshiba Corp | Semiconductor storage device and its manufacture |
KR0179175B1 (en) | 1995-10-05 | 1999-03-20 | 문정환 | Method of manufacturing semiconductor memory device |
US5854501A (en) | 1995-11-20 | 1998-12-29 | Micron Technology, Inc. | Floating gate semiconductor device having a portion formed with a recess |
US6420786B1 (en) | 1996-02-02 | 2002-07-16 | Micron Technology, Inc. | Conductive spacer in a via |
JP2751909B2 (en) * | 1996-02-26 | 1998-05-18 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US6090700A (en) | 1996-03-15 | 2000-07-18 | Vanguard International Semiconductor Corporation | Metallization method for forming interconnects in an integrated circuit |
JP3219677B2 (en) | 1996-03-28 | 2001-10-15 | 三洋電機株式会社 | Rod sorting system |
JP3226548B2 (en) | 1996-05-21 | 2001-11-05 | シーメンス アクチエンゲゼルシヤフト | Thin film multilayer capacitors |
JPH1022476A (en) * | 1996-07-02 | 1998-01-23 | Sony Corp | Capacitive element |
US5792687A (en) | 1996-08-01 | 1998-08-11 | Vanguard International Semiconductor Corporation | Method for fabricating high density integrated circuits using oxide and polysilicon spacers |
TW308727B (en) * | 1996-08-16 | 1997-06-21 | United Microelectronics Corp | Semiconductor memory device with capacitor (4) |
TW304290B (en) | 1996-08-16 | 1997-05-01 | United Microelectronics Corp | The manufacturing method for semiconductor memory device with capacitor |
US5739066A (en) | 1996-09-17 | 1998-04-14 | Micron Technology, Inc. | Semiconductor processing methods of forming a conductive gate and line |
US5714786A (en) | 1996-10-31 | 1998-02-03 | Micron Technology, Inc. | Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors |
US5998256A (en) | 1996-11-01 | 1999-12-07 | Micron Technology, Inc. | Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry |
JP4056588B2 (en) | 1996-11-06 | 2008-03-05 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
US5714412A (en) | 1996-12-02 | 1998-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd | Multi-level, split-gate, flash memory cell and method of manufacture thereof |
KR19980064176A (en) | 1996-12-17 | 1998-10-07 | 윌리엄비.켐플러 | Integrated circuit dielectric |
JP4053647B2 (en) | 1997-02-27 | 2008-02-27 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
US5792690A (en) | 1997-05-15 | 1998-08-11 | Vanguard International Semiconductor Corporation | Method of fabricating a DRAM cell with an area equal to four times the used minimum feature |
US6337497B1 (en) | 1997-05-16 | 2002-01-08 | International Business Machines Corporation | Common source transistor capacitor stack |
US6054355A (en) | 1997-06-30 | 2000-04-25 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device which includes forming a dummy gate |
US6191470B1 (en) | 1997-07-08 | 2001-02-20 | Micron Technology, Inc. | Semiconductor-on-insulator memory cell with buried word and body lines |
US6150687A (en) | 1997-07-08 | 2000-11-21 | Micron Technology, Inc. | Memory cell having a vertical transistor with buried source/drain and dual gates |
US5909618A (en) | 1997-07-08 | 1999-06-01 | Micron Technology, Inc. | Method of making memory cell with vertical transistor and buried word and body lines |
US6072209A (en) | 1997-07-08 | 2000-06-06 | Micro Technology, Inc. | Four F2 folded bit line DRAM cell structure having buried bit and word lines |
US6380026B2 (en) | 1997-08-22 | 2002-04-30 | Micron Technology, Inc. | Processing methods of forming integrated circuitry memory devices, methods of forming DRAM arrays, and related semiconductor masks |
JP3502531B2 (en) * | 1997-08-28 | 2004-03-02 | 株式会社ルネサステクノロジ | Method for manufacturing semiconductor device |
DE19801095B4 (en) | 1998-01-14 | 2007-12-13 | Infineon Technologies Ag | Power MOSFET |
US6246083B1 (en) | 1998-02-24 | 2001-06-12 | Micron Technology, Inc. | Vertical gain cell and array for a dynamic random access memory |
US5963469A (en) | 1998-02-24 | 1999-10-05 | Micron Technology, Inc. | Vertical bipolar read access for low voltage memory cell |
US6097065A (en) | 1998-03-30 | 2000-08-01 | Micron Technology, Inc. | Circuits and methods for dual-gated transistors |
US6259142B1 (en) | 1998-04-07 | 2001-07-10 | Advanced Micro Devices, Inc. | Multiple split gate semiconductor device and fabrication method |
US6696746B1 (en) | 1998-04-29 | 2004-02-24 | Micron Technology, Inc. | Buried conductors |
US5972754A (en) | 1998-06-10 | 1999-10-26 | Mosel Vitelic, Inc. | Method for fabricating MOSFET having increased effective gate length |
US6767789B1 (en) | 1998-06-26 | 2004-07-27 | International Business Machines Corporation | Method for interconnection between transfer devices and storage capacitors in memory cells and device formed thereby |
US6458925B1 (en) | 1998-08-03 | 2002-10-01 | University Of Maryland, Baltimore | Peptide antagonists of zonulin and methods for use of the same |
KR100304717B1 (en) | 1998-08-18 | 2001-11-15 | 김덕중 | Semiconductor device having a trench type gate and method for fabricating therefor |
US6362506B1 (en) | 1998-08-26 | 2002-03-26 | Texas Instruments Incorporated | Minimization-feasible word line structure for DRAM cell |
JP4322330B2 (en) * | 1998-09-04 | 2009-08-26 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor integrated circuit device |
US6225669B1 (en) | 1998-09-30 | 2001-05-01 | Advanced Micro Devices, Inc. | Non-uniform gate/dielectric field effect transistor |
DE19845003C1 (en) | 1998-09-30 | 2000-02-10 | Siemens Ag | Vertical MOS transistor in semiconductor substrate |
US6120952A (en) | 1998-10-01 | 2000-09-19 | Micron Technology, Inc. | Methods of reducing proximity effects in lithographic processes |
US6114205A (en) | 1998-10-30 | 2000-09-05 | Sony Corporation | Epitaxial channel vertical MOS transistor |
EP1003219B1 (en) | 1998-11-19 | 2011-12-28 | Qimonda AG | DRAM with stacked capacitor and buried word line |
US5977579A (en) | 1998-12-03 | 1999-11-02 | Micron Technology, Inc. | Trench dram cell with vertical device and buried word lines |
JP2000208762A (en) * | 1999-01-13 | 2000-07-28 | Sony Corp | Insulation gate field effect transistor and its manufacture |
US6383861B1 (en) | 1999-02-18 | 2002-05-07 | Micron Technology, Inc. | Method of fabricating a dual gate dielectric |
JP3973819B2 (en) | 1999-03-08 | 2007-09-12 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
US6180494B1 (en) | 1999-03-11 | 2001-01-30 | Micron Technology, Inc. | Integrated circuitry, methods of fabricating integrated circuitry, methods of forming local interconnects, and methods of forming conductive lines |
KR100282452B1 (en) | 1999-03-18 | 2001-02-15 | 김영환 | Semiconductor device and method for fabricating the same |
JP2001024161A (en) | 1999-04-30 | 2001-01-26 | Sony Corp | Semiconductor memory cell |
US6297106B1 (en) | 1999-05-07 | 2001-10-02 | Chartered Semiconductor Manufacturing Ltd. | Transistors with low overlap capacitance |
US6306755B1 (en) | 1999-05-14 | 2001-10-23 | Koninklijke Philips Electronics N.V. (Kpenv) | Method for endpoint detection during dry etch of submicron features in a semiconductor device |
WO2000070622A1 (en) | 1999-05-14 | 2000-11-23 | Hitachi, Ltd. | Storage circuit |
DE19928781C1 (en) | 1999-06-23 | 2000-07-06 | Siemens Ag | DRAM cell array has deep word line trenches for increasing transistor channel length and has no fixed potential word lines separating adjacent memory cells |
US6392271B1 (en) | 1999-06-28 | 2002-05-21 | Intel Corporation | Structure and process flow for fabrication of dual gate floating body integrated MOS transistors |
US6187643B1 (en) | 1999-06-29 | 2001-02-13 | Varian Semiconductor Equipment Associates, Inc. | Simplified semiconductor device manufacturing using low energy high tilt angle and high energy post-gate ion implantation (PoGI) |
US6114735A (en) | 1999-07-02 | 2000-09-05 | Micron Technology, Inc. | Field effect transistors and method of forming field effect transistors |
US6214670B1 (en) * | 1999-07-22 | 2001-04-10 | Taiwan Semiconductor Manufacturing Company | Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance |
US6630712B2 (en) | 1999-08-11 | 2003-10-07 | Advanced Micro Devices, Inc. | Transistor with dynamic source/drain extensions |
US6033963A (en) | 1999-08-30 | 2000-03-07 | Taiwan Semiconductor Manufacturing Company | Method of forming a metal gate for CMOS devices using a replacement gate process |
US6461915B1 (en) | 1999-09-01 | 2002-10-08 | Micron Technology, Inc. | Method and structure for an improved floating gate memory cell |
US6403442B1 (en) | 1999-09-02 | 2002-06-11 | Micron Technology, Inc. | Methods of forming capacitors and resultant capacitor structures |
DE19943760C1 (en) | 1999-09-13 | 2001-02-01 | Infineon Technologies Ag | DRAM cell arrangement comprises a substrate with a recess containing a storage node of a capacitor |
JP3450758B2 (en) | 1999-09-29 | 2003-09-29 | 株式会社東芝 | Method for manufacturing field effect transistor |
US6303518B1 (en) | 1999-09-30 | 2001-10-16 | Novellus Systems, Inc. | Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers |
US6255165B1 (en) | 1999-10-18 | 2001-07-03 | Advanced Micro Devices, Inc. | Nitride plug to reduce gate edge lifting |
TW432546B (en) | 1999-11-25 | 2001-05-01 | Taiwan Semiconductor Mfg | Manufacturing method of copper damascene |
US6383879B1 (en) | 1999-12-03 | 2002-05-07 | Agere Systems Guardian Corp. | Semiconductor device having a metal gate with a work function compatible with a semiconductor device |
US6323506B1 (en) | 1999-12-21 | 2001-11-27 | Philips Electronics North America Corporation | Self-aligned silicon carbide LMOSFET |
JP4860022B2 (en) | 2000-01-25 | 2012-01-25 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor integrated circuit device |
JP4363736B2 (en) | 2000-03-01 | 2009-11-11 | 新電元工業株式会社 | Transistor and manufacturing method thereof |
US6306775B1 (en) * | 2000-06-21 | 2001-10-23 | Micron Technology, Inc. | Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG |
US6399490B1 (en) | 2000-06-29 | 2002-06-04 | International Business Machines Corporation | Highly conformal titanium nitride deposition process for high aspect ratio structures |
DE10036725C2 (en) * | 2000-07-27 | 2002-11-28 | Infineon Technologies Ag | Process for producing a porous insulating layer with a low dielectric constant on a semiconductor substrate |
DE10038728A1 (en) | 2000-07-31 | 2002-02-21 | Infineon Technologies Ag | Semiconductor memory cell arrangement and method for the production thereof |
AU2001286895A1 (en) | 2000-08-29 | 2002-03-13 | Boise State University | Damascene double gated transistors and related manufacturing methods |
US6495474B1 (en) | 2000-09-11 | 2002-12-17 | Agere Systems Inc. | Method of fabricating a dielectric layer |
US6391720B1 (en) | 2000-09-27 | 2002-05-21 | Chartered Semiconductor Manufacturing Ltd. | Process flow for a performance enhanced MOSFET with self-aligned, recessed channel |
US6340614B1 (en) | 2000-10-03 | 2002-01-22 | Vanguard International Semiconductor Corporation | Method of forming a DRAM cell |
JP2002151654A (en) | 2000-11-10 | 2002-05-24 | Sharp Corp | Dielectric capacitor element and manufacturing method therefor |
US6552401B1 (en) | 2000-11-27 | 2003-04-22 | Micron Technology | Use of gate electrode workfunction to improve DRAM refresh |
US6348385B1 (en) | 2000-11-30 | 2002-02-19 | Chartered Semiconductor Manufacturing Ltd. | Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant |
GB0029315D0 (en) | 2000-12-01 | 2001-01-17 | Koninkl Philips Electronics Nv | Method of increasing the conductivity of a transparent conductive layer |
US6621112B2 (en) * | 2000-12-06 | 2003-09-16 | Infineon Technologies Ag | DRAM with vertical transistor and trench capacitor memory cells and methods of fabrication |
JP4635333B2 (en) | 2000-12-14 | 2011-02-23 | ソニー株式会社 | Manufacturing method of semiconductor device |
US6864536B2 (en) | 2000-12-20 | 2005-03-08 | Winbond Electronics Corporation | Electrostatic discharge protection circuit |
KR100360414B1 (en) | 2001-01-05 | 2002-11-13 | 삼성전자 주식회사 | Method for forming a lower electrode of cylinder type capacitor preventing a twin bit failure |
US6300177B1 (en) | 2001-01-25 | 2001-10-09 | Chartered Semiconductor Manufacturing Inc. | Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials |
JP3944367B2 (en) | 2001-02-06 | 2007-07-11 | 松下電器産業株式会社 | Method for forming insulating film and method for manufacturing semiconductor device |
KR100388682B1 (en) * | 2001-03-03 | 2003-06-25 | 삼성전자주식회사 | Storage electric terminal layer and method for forming thereof |
US6759707B2 (en) | 2001-03-08 | 2004-07-06 | Micron Technology, Inc. | 2F2 memory device system |
DE10111755C1 (en) | 2001-03-12 | 2002-05-16 | Infineon Technologies Ag | Production of a storage cell used in DRAMs comprises using a multiple step process in which a word line contact is eventually formed to electrically connect the gate to the word line |
CA2340985A1 (en) | 2001-03-14 | 2002-09-14 | Atmos Corporation | Interleaved wordline architecture |
US6734510B2 (en) | 2001-03-15 | 2004-05-11 | Micron Technology, Ing. | Technique to mitigate short channel effects with vertical gate transistor with different gate materials |
JP4895430B2 (en) | 2001-03-22 | 2012-03-14 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
JP3671854B2 (en) | 2001-04-05 | 2005-07-13 | 松下電器産業株式会社 | Surface treatment method for silicon substrate |
JP2002314072A (en) | 2001-04-19 | 2002-10-25 | Nec Corp | Semiconductor device with high dielectric thin film and manufacturing method therefor, and film-forming method for dielectric film |
TW544911B (en) | 2001-04-26 | 2003-08-01 | Toshiba Corp | Semiconductor device |
US6498062B2 (en) * | 2001-04-27 | 2002-12-24 | Micron Technology, Inc. | DRAM access transistor |
US6509612B2 (en) | 2001-05-04 | 2003-01-21 | International Business Machines Corporation | High dielectric constant materials as gate dielectrics (insulators) |
US6624486B2 (en) | 2001-05-23 | 2003-09-23 | International Business Machines Corporation | Method for low topography semiconductor device formation |
DE10125967C1 (en) | 2001-05-29 | 2002-07-11 | Infineon Technologies Ag | DRAM cell arrangement used for a semiconductor storage device comprises a matrix arrangement of storage cells stacked over each other as layers, and a capacitor connected to the MOS transistor |
JP2002353445A (en) | 2001-05-30 | 2002-12-06 | Sony Corp | Method of manufacturing groove gate field-effect transistor |
US6888198B1 (en) | 2001-06-04 | 2005-05-03 | Advanced Micro Devices, Inc. | Straddled gate FDSOI device |
TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
JP4246929B2 (en) | 2001-06-29 | 2009-04-02 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
JP2003023150A (en) | 2001-07-10 | 2003-01-24 | Sony Corp | Trench gate type semiconductor device and manufacturing method therefor |
KR100398955B1 (en) | 2001-08-02 | 2003-09-19 | 삼성전자주식회사 | Eeprom memory cell and method of forming the same |
DE10139827A1 (en) | 2001-08-14 | 2003-03-13 | Infineon Technologies Ag | Memory cell with trench capacitor and vertical selection transistor and an annular contact area formed between them |
US6800899B2 (en) | 2001-08-30 | 2004-10-05 | Micron Technology, Inc. | Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor |
KR100431656B1 (en) | 2001-09-11 | 2004-05-17 | 삼성전자주식회사 | Method of manufacturing semiconductor device |
JP2003092367A (en) * | 2001-09-19 | 2003-03-28 | Oki Electric Ind Co Ltd | Method of manufacturing semiconductor device |
US6825093B2 (en) | 2001-09-28 | 2004-11-30 | Infineon Technologies Ag | Process window enhancement for deep trench spacer conservation |
KR100400323B1 (en) * | 2001-11-01 | 2003-10-01 | 주식회사 하이닉스반도체 | CMOS of semiconductor device and method for manufacturing the same |
KR100436287B1 (en) | 2001-11-17 | 2004-06-16 | 주식회사 하이닉스반도체 | Transistor of a semiconductor device and method of manufacturing thereof |
US6724028B2 (en) * | 2001-12-10 | 2004-04-20 | Hans Gude Gudesen | Matrix-addressable array of integrated transistor/memory structures |
US6630720B1 (en) | 2001-12-26 | 2003-10-07 | Advanced Micro Devices, Inc. | Asymmetric semiconductor device having dual work function gate and method of fabrication |
US6563183B1 (en) | 2001-12-31 | 2003-05-13 | Advanced Micro Devices, Inc. | Gate array with multiple dielectric properties and method for forming same |
US6858500B2 (en) | 2002-01-16 | 2005-02-22 | Fuji Electric Co., Ltd. | Semiconductor device and its manufacturing method |
US6656748B2 (en) | 2002-01-31 | 2003-12-02 | Texas Instruments Incorporated | FeRAM capacitor post stack etch clean/repair |
DE10208249B4 (en) | 2002-02-26 | 2006-09-14 | Infineon Technologies Ag | Semiconductor memory with vertical selection transistor |
US6515325B1 (en) | 2002-03-06 | 2003-02-04 | Micron Technology, Inc. | Nanotube semiconductor devices and methods for making the same |
US6661042B2 (en) | 2002-03-11 | 2003-12-09 | Monolithic System Technology, Inc. | One-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region |
US6586808B1 (en) | 2002-06-06 | 2003-07-01 | Advanced Micro Devices, Inc. | Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric |
US6946371B2 (en) | 2002-06-10 | 2005-09-20 | Amberwave Systems Corporation | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
DE10226583B4 (en) | 2002-06-14 | 2010-07-08 | Qimonda Ag | DRAM memory cell for fast read / write access and memory cell array |
US6756625B2 (en) | 2002-06-21 | 2004-06-29 | Micron Technology, Inc. | Memory cell and method for forming the same |
JP3934507B2 (en) | 2002-08-08 | 2007-06-20 | 株式会社東芝 | Semiconductor memory device and manufacturing method of semiconductor memory device |
US7071043B2 (en) | 2002-08-15 | 2006-07-04 | Micron Technology, Inc. | Methods of forming a field effect transistor having source/drain material over insulative material |
US20040034587A1 (en) | 2002-08-19 | 2004-02-19 | Amberson Matthew Gilbert | System and method for calculating intra-period volatility |
US6838723B2 (en) | 2002-08-29 | 2005-01-04 | Micron Technology, Inc. | Merged MOS-bipolar capacitor memory cell |
US6818947B2 (en) | 2002-09-19 | 2004-11-16 | Fairchild Semiconductor Corporation | Buried gate-field termination structure |
US6645869B1 (en) | 2002-09-26 | 2003-11-11 | Vanguard International Semiconductor Corporation | Etching back process to improve topographic planarization of a polysilicon layer |
US7033891B2 (en) * | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
US6753228B2 (en) | 2002-10-15 | 2004-06-22 | Semiconductor Components Industries, L.L.C. | Method of forming a low resistance semiconductor device and structure therefor |
TW588413B (en) * | 2002-11-07 | 2004-05-21 | Winbond Electronics Corp | Manufacturing method and device of memory with different depths of isolation trench |
KR100481867B1 (en) | 2002-11-11 | 2005-04-11 | 삼성전자주식회사 | Ferroelectric capacitor and method for fabricating the same |
US6645818B1 (en) | 2002-11-13 | 2003-11-11 | Chartered Semiconductor Manufacturing Ltd. | Method to fabricate dual-metal gate for N- and P-FETs |
US7250650B2 (en) | 2002-11-21 | 2007-07-31 | Infineon Technologies Ag | Field-effect transistor structure and associated semiconductor memory cell |
US7030436B2 (en) | 2002-12-04 | 2006-04-18 | Micron Technology, Inc. | Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means |
KR100521369B1 (en) | 2002-12-18 | 2005-10-12 | 삼성전자주식회사 | High speed and low power consumption semiconductor device and method for fabricating the same |
TW574746B (en) | 2002-12-19 | 2004-02-01 | Taiwan Semiconductor Mfg | Method for manufacturing MOSFET with recessed channel |
KR20040061967A (en) | 2002-12-31 | 2004-07-07 | 동부전자 주식회사 | Method for forming isolation layer of semiconductor device |
TW578274B (en) * | 2003-01-17 | 2004-03-01 | Nanya Technology Corp | Vertical flash memory cell with tip-shape floating gate and method therefor |
JP4502173B2 (en) | 2003-02-03 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
JP2004247656A (en) | 2003-02-17 | 2004-09-02 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
US6956256B2 (en) | 2003-03-04 | 2005-10-18 | Micron Technology Inc. | Vertical gain cell |
JP2004281736A (en) | 2003-03-17 | 2004-10-07 | Nec Electronics Corp | Semiconductor memory device |
TW578328B (en) | 2003-03-28 | 2004-03-01 | Gemtek Technology Co Ltd | Dual-frequency inverted-F antenna |
KR100554163B1 (en) * | 2003-03-29 | 2006-02-22 | 한국전자통신연구원 | Bust mode optical receiver which allows for a characteristic of extinction ratio of received optical signal |
KR100480645B1 (en) | 2003-04-01 | 2005-03-31 | 삼성전자주식회사 | Method for manufacturing SONOS memory device with twin-ONO by reverse self-aligning process |
FR2853319B1 (en) * | 2003-04-03 | 2005-05-06 | Rhodia Chimie Sa | RETICULABLE COMPOSITION FOR BATTERY ELECTROLYTE |
US6720232B1 (en) * | 2003-04-10 | 2004-04-13 | Taiwan Semiconductor Manufacturing Company | Method of fabricating an embedded DRAM for metal-insulator-metal (MIM) capacitor structure |
US6967143B2 (en) | 2003-04-30 | 2005-11-22 | Freescale Semiconductor, Inc. | Semiconductor fabrication process with asymmetrical conductive spacers |
JP2004335031A (en) | 2003-05-09 | 2004-11-25 | Toshiba Corp | Semiconductor storage device |
JP3913709B2 (en) | 2003-05-09 | 2007-05-09 | 株式会社東芝 | Semiconductor memory device |
KR100568854B1 (en) * | 2003-06-17 | 2006-04-10 | 삼성전자주식회사 | Method for forming transistor with recess channel for use in semiconductor memory |
US7105406B2 (en) * | 2003-06-20 | 2006-09-12 | Sandisk Corporation | Self aligned non-volatile memory cell and process for fabrication |
US6818515B1 (en) | 2003-06-23 | 2004-11-16 | Promos Technologies Inc. | Method for fabricating semiconductor device with loop line pattern structure |
KR100521381B1 (en) | 2003-06-25 | 2005-10-12 | 삼성전자주식회사 | Method Of Fabricating Metal-Oxide-Semiconductor Field Effect Transistor |
KR100511045B1 (en) | 2003-07-14 | 2005-08-30 | 삼성전자주식회사 | Integration method of a semiconductor device having a recessed gate electrode |
US7335934B2 (en) | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
US7326619B2 (en) | 2003-08-20 | 2008-02-05 | Samsung Electronics Co., Ltd. | Method of manufacturing integrated circuit device including recessed channel transistor |
US6784069B1 (en) * | 2003-08-29 | 2004-08-31 | Micron Technology, Inc. | Permeable capacitor electrode |
US7125781B2 (en) | 2003-09-04 | 2006-10-24 | Micron Technology, Inc. | Methods of forming capacitor devices |
US7067385B2 (en) | 2003-09-04 | 2006-06-27 | Micron Technology, Inc. | Support for vertically oriented capacitors during the formation of a semiconductor device |
KR100546378B1 (en) | 2003-09-09 | 2006-01-26 | 삼성전자주식회사 | Method of manufacturing transistor having recessed channel |
US6844591B1 (en) | 2003-09-17 | 2005-01-18 | Micron Technology, Inc. | Method of forming DRAM access transistors |
JP2005093808A (en) | 2003-09-18 | 2005-04-07 | Fujio Masuoka | Memory cell unit, nonvolatile semiconductor memory device having it and driving method of memory cell array |
US7184298B2 (en) | 2003-09-24 | 2007-02-27 | Innovative Silicon S.A. | Low power programming technique for a floating body memory transistor, memory cell, and memory array |
US7468311B2 (en) | 2003-09-30 | 2008-12-23 | Tokyo Electron Limited | Deposition of silicon-containing films from hexachlorodisilane |
KR100587669B1 (en) * | 2003-10-29 | 2006-06-08 | 삼성전자주식회사 | Method for forming resistor for use in semiconductor device |
JP2005142203A (en) * | 2003-11-04 | 2005-06-02 | Elpida Memory Inc | Semiconductor device and its manufacturing method |
US20050104156A1 (en) | 2003-11-13 | 2005-05-19 | Texas Instruments Incorporated | Forming a semiconductor structure in manufacturing a semiconductor device using one or more epitaxial growth processes |
KR100521383B1 (en) | 2003-11-17 | 2005-10-12 | 삼성전자주식회사 | Semiconductor device with source/drain formed on isolation layers and method of fabricating the same |
JP2005175090A (en) | 2003-12-09 | 2005-06-30 | Toshiba Corp | Semiconductor memory device and its manufacturing method |
KR100518606B1 (en) * | 2003-12-19 | 2005-10-04 | 삼성전자주식회사 | Method for fabricating a recess channel array transistor using a mask layer having high etch selectivity for silicon substrate |
JP4342970B2 (en) | 2004-02-02 | 2009-10-14 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
US7262089B2 (en) | 2004-03-11 | 2007-08-28 | Micron Technology, Inc. | Methods of forming semiconductor structures |
KR100614240B1 (en) * | 2004-06-10 | 2006-08-18 | 삼성전자주식회사 | Semiconductor devices including a field effect transistor and methods of the same |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US7160788B2 (en) * | 2004-08-23 | 2007-01-09 | Micron Technology, Inc. | Methods of forming integrated circuits |
US7122425B2 (en) | 2004-08-24 | 2006-10-17 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
US7202127B2 (en) * | 2004-08-27 | 2007-04-10 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7151040B2 (en) | 2004-08-31 | 2006-12-19 | Micron Technology, Inc. | Methods for increasing photo alignment margins |
US7547945B2 (en) | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
US7442976B2 (en) | 2004-09-01 | 2008-10-28 | Micron Technology, Inc. | DRAM cells with vertical transistors |
US7285812B2 (en) | 2004-09-02 | 2007-10-23 | Micron Technology, Inc. | Vertical transistors |
US7655387B2 (en) | 2004-09-02 | 2010-02-02 | Micron Technology, Inc. | Method to align mask patterns |
US7115525B2 (en) | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
JP4083160B2 (en) | 2004-10-04 | 2008-04-30 | 株式会社東芝 | Semiconductor memory device and driving method of FBC memory cell |
US7608503B2 (en) | 2004-11-22 | 2009-10-27 | Macronix International Co., Ltd. | Side wall active pin memory and manufacturing method |
US20060113588A1 (en) | 2004-11-29 | 2006-06-01 | Sillicon-Based Technology Corp. | Self-aligned trench-type DMOS transistor structure and its manufacturing methods |
KR100640616B1 (en) * | 2004-12-21 | 2006-11-01 | 삼성전자주식회사 | Field effect transistor structure comprising a buried gate pattern and method of manufacturing a semiconductor device comprising the field effect transistor structure |
US20060167741A1 (en) | 2005-01-25 | 2006-07-27 | Cisco Technology, Inc. | System and method for designing a supply chain |
DE102005008478B3 (en) * | 2005-02-24 | 2006-10-26 | Infineon Technologies Ag | Process for the preparation of sublithographic structures |
JP2006237455A (en) | 2005-02-28 | 2006-09-07 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
US7244659B2 (en) | 2005-03-10 | 2007-07-17 | Micron Technology, Inc. | Integrated circuits and methods of forming a field effect transistor |
US7253118B2 (en) | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
US7390746B2 (en) | 2005-03-15 | 2008-06-24 | Micron Technology, Inc. | Multiple deposition for integration of spacers in pitch multiplication process |
US7384849B2 (en) | 2005-03-25 | 2008-06-10 | Micron Technology, Inc. | Methods of forming recessed access devices associated with semiconductor constructions |
US7611944B2 (en) | 2005-03-28 | 2009-11-03 | Micron Technology, Inc. | Integrated circuit fabrication |
US7682401B2 (en) * | 2005-04-11 | 2010-03-23 | Boston Scientific Scimed, Inc. | Ureteral stent |
JP4541220B2 (en) | 2005-04-13 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor integrated circuit device |
US7214621B2 (en) | 2005-05-18 | 2007-05-08 | Micron Technology, Inc. | Methods of forming devices associated with semiconductor constructions |
US7429536B2 (en) | 2005-05-23 | 2008-09-30 | Micron Technology, Inc. | Methods for forming arrays of small, closely spaced features |
US7560390B2 (en) | 2005-06-02 | 2009-07-14 | Micron Technology, Inc. | Multiple spacer steps for pitch multiplication |
US7396781B2 (en) | 2005-06-09 | 2008-07-08 | Micron Technology, Inc. | Method and apparatus for adjusting feature size and position |
JP2006352005A (en) | 2005-06-20 | 2006-12-28 | Toshiba Corp | Ferroelectric storage device and method for manufacturing the same |
US7517741B2 (en) | 2005-06-30 | 2009-04-14 | Freescale Semiconductor, Inc. | Single transistor memory cell with reduced recombination rates |
US7282401B2 (en) | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
US7413981B2 (en) | 2005-07-29 | 2008-08-19 | Micron Technology, Inc. | Pitch doubled circuit layout |
US7199005B2 (en) * | 2005-08-02 | 2007-04-03 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
US7696567B2 (en) | 2005-08-31 | 2010-04-13 | Micron Technology, Inc | Semiconductor memory device |
US7867845B2 (en) | 2005-09-01 | 2011-01-11 | Micron Technology, Inc. | Transistor gate forming methods and transistor structures |
US7687342B2 (en) | 2005-09-01 | 2010-03-30 | Micron Technology, Inc. | Method of manufacturing a memory device |
US7393789B2 (en) | 2005-09-01 | 2008-07-01 | Micron Technology, Inc. | Protective coating for planarization |
JP4773182B2 (en) | 2005-10-28 | 2011-09-14 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor device |
KR100843139B1 (en) | 2005-12-15 | 2008-07-02 | 삼성전자주식회사 | Multi-level dynamic memory device having open bit line structure and driving method thereof |
US7495294B2 (en) * | 2005-12-21 | 2009-02-24 | Sandisk Corporation | Flash devices with shared word lines |
TWI293207B (en) | 2006-01-11 | 2008-02-01 | Promos Technologies Inc | Dynamic random access memory structure and method for preparing the smae |
US7700441B2 (en) | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
US7495946B2 (en) * | 2006-03-02 | 2009-02-24 | Infineon Technologies Ag | Phase change memory fabricated using self-aligned processing |
US7476933B2 (en) | 2006-03-02 | 2009-01-13 | Micron Technology, Inc. | Vertical gated access transistor |
US7349232B2 (en) | 2006-03-15 | 2008-03-25 | Micron Technology, Inc. | 6F2 DRAM cell design with 3F-pitch folded digitline sense amplifier |
US7351666B2 (en) * | 2006-03-17 | 2008-04-01 | International Business Machines Corporation | Layout and process to contact sub-lithographic structures |
US7902074B2 (en) | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US8003310B2 (en) | 2006-04-24 | 2011-08-23 | Micron Technology, Inc. | Masking techniques and templates for dense semiconductor fabrication |
US7488685B2 (en) | 2006-04-25 | 2009-02-10 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
JP2008004738A (en) | 2006-06-22 | 2008-01-10 | Elpida Memory Inc | Semiconductor device and method of manufacturing the same |
US7602001B2 (en) | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
US7755132B2 (en) | 2006-08-16 | 2010-07-13 | Sandisk Corporation | Nonvolatile memories with shaped floating gates |
US7772632B2 (en) | 2006-08-21 | 2010-08-10 | Micron Technology, Inc. | Memory arrays and methods of fabricating memory arrays |
US7589995B2 (en) | 2006-09-07 | 2009-09-15 | Micron Technology, Inc. | One-transistor memory cell with bias gate |
US7732275B2 (en) | 2007-03-29 | 2010-06-08 | Sandisk Corporation | Methods of forming NAND flash memory with fixed charge |
US7494870B2 (en) * | 2007-01-12 | 2009-02-24 | Sandisk Corporation | Methods of forming NAND memory with virtual channel |
US7619311B2 (en) | 2007-02-02 | 2009-11-17 | Macronix International Co., Ltd. | Memory cell device with coplanar electrode surface and method |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8563229B2 (en) | 2007-07-31 | 2013-10-22 | Micron Technology, Inc. | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures |
US7684245B2 (en) * | 2007-10-30 | 2010-03-23 | Atmel Corporation | Non-volatile memory array architecture with joined word lines |
KR101374323B1 (en) | 2008-01-07 | 2014-03-17 | 삼성전자주식회사 | Semiconductor device and method of manufacturing the same |
US7759193B2 (en) | 2008-07-09 | 2010-07-20 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8859367B2 (en) * | 2010-07-09 | 2014-10-14 | Micron Technology, Inc. | Gate constructions of recessed access devices and methods of forming gate constructions of recessed access devices |
-
2006
- 2006-02-02 US US11/346,914 patent/US7700441B2/en active Active
-
2007
- 2007-01-23 SG SG201100719-2A patent/SG169367A1/en unknown
- 2007-01-23 WO PCT/US2007/001953 patent/WO2007111771A2/en active Application Filing
- 2007-01-23 KR KR1020087019137A patent/KR101010475B1/en active IP Right Grant
- 2007-01-23 CN CN2007800037288A patent/CN101375381B/en active Active
- 2007-01-23 EP EP07749192.6A patent/EP1979937B1/en active Active
- 2007-01-23 CN CN201010274715.8A patent/CN102013412B/en active Active
- 2007-01-23 SG SG2012001780A patent/SG177967A1/en unknown
- 2007-01-23 JP JP2008553261A patent/JP5163959B2/en active Active
- 2007-02-01 TW TW096103708A patent/TWI385734B/en active
-
2010
- 2010-03-16 US US12/724,589 patent/US7902028B2/en active Active
-
2011
- 2011-01-31 US US13/017,508 patent/US8389363B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5869359A (en) | 1997-08-20 | 1999-02-09 | Prabhakar; Venkatraman | Process for forming silicon on insulator devices having elevated source and drain regions |
US20040222458A1 (en) | 2003-05-06 | 2004-11-11 | Mosel Vitelic, Inc. | Termination structure for trench DMOS device and method of making the same |
WO2005083770A1 (en) | 2004-03-02 | 2005-09-09 | Tae-Pok Rhee | Semiconductor device of high breakdown voltage and manufacturing method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009141286A (en) * | 2007-12-10 | 2009-06-25 | Elpida Memory Inc | Semiconductor device, and manufacturing method of semiconductor device |
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Publication number | Publication date |
---|---|
KR20080083202A (en) | 2008-09-16 |
SG177967A1 (en) | 2012-02-28 |
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US20110124168A1 (en) | 2011-05-26 |
JP2009525612A (en) | 2009-07-09 |
KR101010475B1 (en) | 2011-01-21 |
CN102013412B (en) | 2014-10-01 |
CN101375381A (en) | 2009-02-25 |
US20070178641A1 (en) | 2007-08-02 |
US8389363B2 (en) | 2013-03-05 |
JP5163959B2 (en) | 2013-03-13 |
TW200737363A (en) | 2007-10-01 |
US20100173456A1 (en) | 2010-07-08 |
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US7902028B2 (en) | 2011-03-08 |
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