WO2007112164A3 - High efficiency intersubband semiconductor lasers - Google Patents

High efficiency intersubband semiconductor lasers Download PDF

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Publication number
WO2007112164A3
WO2007112164A3 PCT/US2007/062569 US2007062569W WO2007112164A3 WO 2007112164 A3 WO2007112164 A3 WO 2007112164A3 US 2007062569 W US2007062569 W US 2007062569W WO 2007112164 A3 WO2007112164 A3 WO 2007112164A3
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WO
WIPO (PCT)
Prior art keywords
energy level
electrons
photon
emission
high efficiency
Prior art date
Application number
PCT/US2007/062569
Other languages
French (fr)
Other versions
WO2007112164A2 (en
Inventor
Dan Botez
Dapeng P Xu
Luke J Mawst
Original Assignee
Wisconsin Alumni Res Found
Dan Botez
Dapeng P Xu
Luke J Mawst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wisconsin Alumni Res Found, Dan Botez, Dapeng P Xu, Luke J Mawst filed Critical Wisconsin Alumni Res Found
Priority to EP07757323.6A priority Critical patent/EP2002518A4/en
Publication of WO2007112164A2 publication Critical patent/WO2007112164A2/en
Publication of WO2007112164A3 publication Critical patent/WO2007112164A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y10S977/951—Laser

Abstract

An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
PCT/US2007/062569 2006-03-10 2007-02-22 High efficiency intersubband semiconductor lasers WO2007112164A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07757323.6A EP2002518A4 (en) 2006-03-10 2007-02-22 High efficiency intersubband semiconductor lasers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/276,712 US7403552B2 (en) 2006-03-10 2006-03-10 High efficiency intersubband semiconductor lasers
US11/276,712 2006-03-10

Publications (2)

Publication Number Publication Date
WO2007112164A2 WO2007112164A2 (en) 2007-10-04
WO2007112164A3 true WO2007112164A3 (en) 2009-02-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/062569 WO2007112164A2 (en) 2006-03-10 2007-02-22 High efficiency intersubband semiconductor lasers

Country Status (3)

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US (2) US7403552B2 (en)
EP (1) EP2002518A4 (en)
WO (1) WO2007112164A2 (en)

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Also Published As

Publication number Publication date
EP2002518A2 (en) 2008-12-17
US20070248131A1 (en) 2007-10-25
US20090022196A1 (en) 2009-01-22
US7403552B2 (en) 2008-07-22
WO2007112164A2 (en) 2007-10-04
US7856042B2 (en) 2010-12-21
EP2002518A4 (en) 2017-03-29

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