WO2007120354A3 - Thin-film capacitor with a field modification layer and methods for forming the same - Google Patents
Thin-film capacitor with a field modification layer and methods for forming the same Download PDFInfo
- Publication number
- WO2007120354A3 WO2007120354A3 PCT/US2006/062388 US2006062388W WO2007120354A3 WO 2007120354 A3 WO2007120354 A3 WO 2007120354A3 US 2006062388 W US2006062388 W US 2006062388W WO 2007120354 A3 WO2007120354 A3 WO 2007120354A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- forming
- modification layer
- metal
- field modification
- thin
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
Abstract
A method for forming a capacitor includes providing a metal-containing bottom electrode (12), forming a capacitor insulator (14) over the metal-containing bottom electrode (12), forming a metal-containing top electrode (18) over the capacitor insulator (14), and forming a dielectric-containing field modification layer (22) over the capacitor insulator (14) and at least partially surrounding the metal-containing top electrode (18). Forming the dielectric-containing field modification layer (22) may include oxidizing a sidewall (22) of the metal-containing field modification layer (18). A barrier layer (16) may be formed over the capacitor insulator (14) prior to forming the metal-containing top electrode (18).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/326,524 US7534693B2 (en) | 2006-01-04 | 2006-01-04 | Thin-film capacitor with a field modification layer and methods for forming the same |
US11/326,524 | 2006-01-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007120354A2 WO2007120354A2 (en) | 2007-10-25 |
WO2007120354A3 true WO2007120354A3 (en) | 2008-12-24 |
Family
ID=38224992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/062388 WO2007120354A2 (en) | 2006-01-04 | 2006-12-20 | Thin-film capacitor with a field modification layer and methods for forming the same |
Country Status (3)
Country | Link |
---|---|
US (2) | US7534693B2 (en) |
TW (1) | TWI388053B (en) |
WO (1) | WO2007120354A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7579282B2 (en) * | 2006-01-13 | 2009-08-25 | Freescale Semiconductor, Inc. | Method for removing metal foot during high-k dielectric/metal gate etching |
US10840325B2 (en) * | 2018-04-11 | 2020-11-17 | International Business Machines Corporation | Low resistance metal-insulator-metal capacitor electrode |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5686151A (en) * | 1993-09-14 | 1997-11-11 | Kabushiki Kaisha Toshiba | Method of forming a metal oxide film |
US6144060A (en) * | 1997-07-31 | 2000-11-07 | Samsung Electronics Co., Ltd. | Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature |
US6261849B1 (en) * | 1997-12-06 | 2001-07-17 | Samsung Electronics Co., Ltd. | Method of forming integrated circuit capacitors having recessed oxidation barrier spacers and method of forming same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5566045A (en) * | 1994-08-01 | 1996-10-15 | Texas Instruments, Inc. | High-dielectric-constant material electrodes comprising thin platinum layers |
US5504041A (en) * | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
US5554564A (en) * | 1994-08-01 | 1996-09-10 | Texas Instruments Incorporated | Pre-oxidizing high-dielectric-constant material electrodes |
KR100215861B1 (en) * | 1996-03-13 | 1999-08-16 | 구본준 | Dielectric thin film fabrication and semiconductor memory device fabrication method |
US6897105B1 (en) * | 1998-09-16 | 2005-05-24 | Texas Instrument Incorporated | Method of forming metal oxide gate structures and capacitor electrodes |
US6184551B1 (en) * | 1997-10-24 | 2001-02-06 | Samsung Electronics Co., Ltd | Method of forming integrated circuit capacitors having electrodes therein that comprise conductive plugs |
TW410402B (en) * | 1998-02-06 | 2000-11-01 | Sony Corp | Dielectric capacitor and method of manufacturing same, and dielectric memeory using same |
JP2000022083A (en) * | 1998-07-03 | 2000-01-21 | Mitsubishi Electric Corp | Mim capacitor and its manufacture |
KR100293720B1 (en) * | 1998-10-01 | 2001-07-12 | 박종섭 | Capacitor Formation Method of Semiconductor Device |
KR100333667B1 (en) * | 1999-06-28 | 2002-04-24 | 박종섭 | Method for fabricating capacitor of ferroelectric random access memory device |
US6417537B1 (en) * | 2000-01-18 | 2002-07-09 | Micron Technology, Inc. | Metal oxynitride capacitor barrier layer |
US6344964B1 (en) * | 2000-07-14 | 2002-02-05 | International Business Machines Corporation | Capacitor having sidewall spacer protecting the dielectric layer |
KR20020049875A (en) * | 2000-12-20 | 2002-06-26 | 윤종용 | Ferroelectric capacitor in semiconductor memory device and method for manufacturing the same |
US6825081B2 (en) | 2001-07-24 | 2004-11-30 | Micron Technology, Inc. | Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitors |
US20030096473A1 (en) * | 2001-11-16 | 2003-05-22 | Taiwan Semiconductor Manufacturing Company | Method for making metal capacitors with low leakage currents for mixed-signal devices |
JP2003318269A (en) * | 2002-04-24 | 2003-11-07 | Mitsubishi Electric Corp | Semiconductor device and method for manufacturing the same |
KR100533973B1 (en) * | 2003-06-30 | 2005-12-07 | 주식회사 하이닉스반도체 | Method for forming ferroelectric capacitor capable of improving adhesion between bottom electrode and ferroelectric layer |
US6898068B2 (en) * | 2003-09-24 | 2005-05-24 | Texas Instruments Incorporated | Dual mask capacitor for integrated circuits |
-
2006
- 2006-01-04 US US11/326,524 patent/US7534693B2/en not_active Expired - Fee Related
- 2006-12-12 TW TW095146368A patent/TWI388053B/en not_active IP Right Cessation
- 2006-12-20 WO PCT/US2006/062388 patent/WO2007120354A2/en active Application Filing
-
2009
- 2009-04-28 US US12/431,288 patent/US7751177B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5686151A (en) * | 1993-09-14 | 1997-11-11 | Kabushiki Kaisha Toshiba | Method of forming a metal oxide film |
US6144060A (en) * | 1997-07-31 | 2000-11-07 | Samsung Electronics Co., Ltd. | Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature |
US6261849B1 (en) * | 1997-12-06 | 2001-07-17 | Samsung Electronics Co., Ltd. | Method of forming integrated circuit capacitors having recessed oxidation barrier spacers and method of forming same |
Also Published As
Publication number | Publication date |
---|---|
TWI388053B (en) | 2013-03-01 |
TW200735332A (en) | 2007-09-16 |
US20070155113A1 (en) | 2007-07-05 |
WO2007120354A2 (en) | 2007-10-25 |
US7751177B2 (en) | 2010-07-06 |
US7534693B2 (en) | 2009-05-19 |
US20090279226A1 (en) | 2009-11-12 |
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