WO2007121000A3 - Cross-talk and back side shielding in a front side illuminated photo detector diode array - Google Patents

Cross-talk and back side shielding in a front side illuminated photo detector diode array Download PDF

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Publication number
WO2007121000A3
WO2007121000A3 PCT/US2007/063407 US2007063407W WO2007121000A3 WO 2007121000 A3 WO2007121000 A3 WO 2007121000A3 US 2007063407 W US2007063407 W US 2007063407W WO 2007121000 A3 WO2007121000 A3 WO 2007121000A3
Authority
WO
WIPO (PCT)
Prior art keywords
photo detector
talk
detector diode
cross
front side
Prior art date
Application number
PCT/US2007/063407
Other languages
French (fr)
Other versions
WO2007121000A2 (en
Inventor
David B Kerwin
Rockford Curby
Original Assignee
Aeroflex Colorado Springs Inc
David B Kerwin
Rockford Curby
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aeroflex Colorado Springs Inc, David B Kerwin, Rockford Curby filed Critical Aeroflex Colorado Springs Inc
Publication of WO2007121000A2 publication Critical patent/WO2007121000A2/en
Publication of WO2007121000A3 publication Critical patent/WO2007121000A3/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combinations
    • G01T1/20183Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combinations
    • G01T1/20188Auxiliary details, e.g. casings or cooling
    • G01T1/2019Shielding against direct hits

Abstract

A front side illuminated photo detector array is shielded from X-ray cross-talk by filling the septa between individual photo detector diodes with a high atomic number material such as tungsten. The processing circuitry is also shielded from stray X-rays by a barrier such as tungsten placed between each photo detector diode and the processing circuitry. This barrier serves a dual role as shielding the processing circuitry from stray X-ray radiation and acting as the electrical contact between the detector diode and the circuitry.
PCT/US2007/063407 2006-03-08 2007-03-06 Cross-talk and back side shielding in a front side illuminated photo detector diode array WO2007121000A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US78031306P 2006-03-08 2006-03-08
US60/780,313 2006-03-08
US11/681,462 US7544947B2 (en) 2006-03-08 2007-03-02 Cross-talk and back side shielding in a front side illuminated photo detector diode array
US11/681,462 2007-03-02

Publications (2)

Publication Number Publication Date
WO2007121000A2 WO2007121000A2 (en) 2007-10-25
WO2007121000A3 true WO2007121000A3 (en) 2008-04-17

Family

ID=38477991

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/063407 WO2007121000A2 (en) 2006-03-08 2007-03-06 Cross-talk and back side shielding in a front side illuminated photo detector diode array

Country Status (2)

Country Link
US (1) US7544947B2 (en)
WO (1) WO2007121000A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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US7928534B2 (en) * 2008-10-09 2011-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad connection to redistribution lines having tapered profiles
US8736050B2 (en) * 2009-09-03 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Front side copper post joint structure for temporary bond in TSV application
US8759949B2 (en) * 2009-04-30 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer backside structures having copper pillars
US8779366B2 (en) * 2009-05-20 2014-07-15 Koninklijke Philips N.V. Pixelated scintillator array
US8158489B2 (en) * 2009-06-26 2012-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of TSV backside interconnects by modifying carrier wafers
US8610079B2 (en) * 2009-12-28 2013-12-17 General Electric Company Robust radiation detector and method of forming the same
US20110211667A1 (en) * 2010-02-26 2011-09-01 Abdelaziz Ikhlef De-populated detector for computed tomography and method of making same
US8174124B2 (en) 2010-04-08 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy pattern in wafer backside routing
US8633444B2 (en) * 2011-06-03 2014-01-21 Kabushiki Kaisha Toshiba Efficient and serviceable light guide for PET detector
US8441104B1 (en) 2011-11-16 2013-05-14 Analog Devices, Inc. Electrical overstress protection using through-silicon-via (TSV)
US9052399B2 (en) 2011-12-30 2015-06-09 Saint-Gobain Ceramics & Plastics, Inc. Scintillator pixel array with reduced cross talk
US8829454B2 (en) 2012-02-27 2014-09-09 Analog Devices, Inc. Compact sensor module
US9116022B2 (en) 2012-12-07 2015-08-25 Analog Devices, Inc. Compact sensor module
US9419046B2 (en) * 2015-01-21 2016-08-16 Terapede Systems Inc. Integrated scintillator grid with photodiodes
US10074624B2 (en) 2015-08-07 2018-09-11 Analog Devices, Inc. Bond pads with differently sized openings
CN107271042A (en) * 2017-04-27 2017-10-20 中国空空导弹研究院 A kind of detector crosstalk measuring device, its preparation method and crosstalk measuring method
US11056455B2 (en) 2017-08-01 2021-07-06 Analog Devices, Inc. Negative fillet for mounting an integrated device die to a carrier
US11688709B2 (en) 2018-12-06 2023-06-27 Analog Devices, Inc. Integrated device packages with passive device assemblies
US11664340B2 (en) 2020-07-13 2023-05-30 Analog Devices, Inc. Negative fillet for mounting an integrated device die to a carrier

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US4414473A (en) * 1981-02-23 1983-11-08 General Electric Company Resilient mount for modular detector cell
US4417144A (en) * 1981-02-23 1983-11-22 General Electric Company Modular solid-state detector cell
US4429227A (en) * 1981-12-28 1984-01-31 General Electric Company Solid state detector for CT comprising improvements in collimator plates
US5773829A (en) * 1996-11-05 1998-06-30 Iwanczyk; Jan S. Radiation imaging detector
US5866908A (en) * 1996-02-20 1999-02-02 Saint-Gobain/Norton Industrial Ceramics Corporation Reflector compensation for scintillator array with low temperature expansion
US6667183B2 (en) * 1999-05-14 2003-12-23 Tower Semicondcutor Ltd. Fabricating photodetecting integrated circuits with low cross talk

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US3670395A (en) * 1970-09-18 1972-06-20 Tokyo Shibaura Electric Co Method of making a honeycomb block collimator
DE3900245A1 (en) * 1988-01-06 1989-07-20 Hitachi Ltd MULTI-ELEMENT RADIATION DETECTOR
JP2001099941A (en) * 1999-09-30 2001-04-13 Hitachi Metals Ltd Radiation shielding plate, radiation detector, and manufacturing method of radiation shielding plate
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6934354B2 (en) * 2003-05-02 2005-08-23 General Electric Company Collimator assembly having multi-piece components

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414473A (en) * 1981-02-23 1983-11-08 General Electric Company Resilient mount for modular detector cell
US4417144A (en) * 1981-02-23 1983-11-22 General Electric Company Modular solid-state detector cell
US4429227A (en) * 1981-12-28 1984-01-31 General Electric Company Solid state detector for CT comprising improvements in collimator plates
US5866908A (en) * 1996-02-20 1999-02-02 Saint-Gobain/Norton Industrial Ceramics Corporation Reflector compensation for scintillator array with low temperature expansion
US5773829A (en) * 1996-11-05 1998-06-30 Iwanczyk; Jan S. Radiation imaging detector
US6667183B2 (en) * 1999-05-14 2003-12-23 Tower Semicondcutor Ltd. Fabricating photodetecting integrated circuits with low cross talk

Also Published As

Publication number Publication date
WO2007121000A2 (en) 2007-10-25
US20070210259A1 (en) 2007-09-13
US7544947B2 (en) 2009-06-09

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