WO2007121000A3 - Cross-talk and back side shielding in a front side illuminated photo detector diode array - Google Patents
Cross-talk and back side shielding in a front side illuminated photo detector diode array Download PDFInfo
- Publication number
- WO2007121000A3 WO2007121000A3 PCT/US2007/063407 US2007063407W WO2007121000A3 WO 2007121000 A3 WO2007121000 A3 WO 2007121000A3 US 2007063407 W US2007063407 W US 2007063407W WO 2007121000 A3 WO2007121000 A3 WO 2007121000A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photo detector
- talk
- detector diode
- cross
- front side
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/2019—Shielding against direct hits
Abstract
A front side illuminated photo detector array is shielded from X-ray cross-talk by filling the septa between individual photo detector diodes with a high atomic number material such as tungsten. The processing circuitry is also shielded from stray X-rays by a barrier such as tungsten placed between each photo detector diode and the processing circuitry. This barrier serves a dual role as shielding the processing circuitry from stray X-ray radiation and acting as the electrical contact between the detector diode and the circuitry.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78031306P | 2006-03-08 | 2006-03-08 | |
US60/780,313 | 2006-03-08 | ||
US11/681,462 US7544947B2 (en) | 2006-03-08 | 2007-03-02 | Cross-talk and back side shielding in a front side illuminated photo detector diode array |
US11/681,462 | 2007-03-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007121000A2 WO2007121000A2 (en) | 2007-10-25 |
WO2007121000A3 true WO2007121000A3 (en) | 2008-04-17 |
Family
ID=38477991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/063407 WO2007121000A2 (en) | 2006-03-08 | 2007-03-06 | Cross-talk and back side shielding in a front side illuminated photo detector diode array |
Country Status (2)
Country | Link |
---|---|
US (1) | US7544947B2 (en) |
WO (1) | WO2007121000A2 (en) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7928534B2 (en) * | 2008-10-09 | 2011-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad connection to redistribution lines having tapered profiles |
US8736050B2 (en) * | 2009-09-03 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side copper post joint structure for temporary bond in TSV application |
US8759949B2 (en) * | 2009-04-30 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside structures having copper pillars |
US8779366B2 (en) * | 2009-05-20 | 2014-07-15 | Koninklijke Philips N.V. | Pixelated scintillator array |
US8158489B2 (en) * | 2009-06-26 | 2012-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of TSV backside interconnects by modifying carrier wafers |
US8610079B2 (en) * | 2009-12-28 | 2013-12-17 | General Electric Company | Robust radiation detector and method of forming the same |
US20110211667A1 (en) * | 2010-02-26 | 2011-09-01 | Abdelaziz Ikhlef | De-populated detector for computed tomography and method of making same |
US8174124B2 (en) | 2010-04-08 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dummy pattern in wafer backside routing |
US8633444B2 (en) * | 2011-06-03 | 2014-01-21 | Kabushiki Kaisha Toshiba | Efficient and serviceable light guide for PET detector |
US8441104B1 (en) | 2011-11-16 | 2013-05-14 | Analog Devices, Inc. | Electrical overstress protection using through-silicon-via (TSV) |
US9052399B2 (en) | 2011-12-30 | 2015-06-09 | Saint-Gobain Ceramics & Plastics, Inc. | Scintillator pixel array with reduced cross talk |
US8829454B2 (en) | 2012-02-27 | 2014-09-09 | Analog Devices, Inc. | Compact sensor module |
US9116022B2 (en) | 2012-12-07 | 2015-08-25 | Analog Devices, Inc. | Compact sensor module |
US9419046B2 (en) * | 2015-01-21 | 2016-08-16 | Terapede Systems Inc. | Integrated scintillator grid with photodiodes |
US10074624B2 (en) | 2015-08-07 | 2018-09-11 | Analog Devices, Inc. | Bond pads with differently sized openings |
CN107271042A (en) * | 2017-04-27 | 2017-10-20 | 中国空空导弹研究院 | A kind of detector crosstalk measuring device, its preparation method and crosstalk measuring method |
US11056455B2 (en) | 2017-08-01 | 2021-07-06 | Analog Devices, Inc. | Negative fillet for mounting an integrated device die to a carrier |
US11688709B2 (en) | 2018-12-06 | 2023-06-27 | Analog Devices, Inc. | Integrated device packages with passive device assemblies |
US11664340B2 (en) | 2020-07-13 | 2023-05-30 | Analog Devices, Inc. | Negative fillet for mounting an integrated device die to a carrier |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4414473A (en) * | 1981-02-23 | 1983-11-08 | General Electric Company | Resilient mount for modular detector cell |
US4417144A (en) * | 1981-02-23 | 1983-11-22 | General Electric Company | Modular solid-state detector cell |
US4429227A (en) * | 1981-12-28 | 1984-01-31 | General Electric Company | Solid state detector for CT comprising improvements in collimator plates |
US5773829A (en) * | 1996-11-05 | 1998-06-30 | Iwanczyk; Jan S. | Radiation imaging detector |
US5866908A (en) * | 1996-02-20 | 1999-02-02 | Saint-Gobain/Norton Industrial Ceramics Corporation | Reflector compensation for scintillator array with low temperature expansion |
US6667183B2 (en) * | 1999-05-14 | 2003-12-23 | Tower Semicondcutor Ltd. | Fabricating photodetecting integrated circuits with low cross talk |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3670395A (en) * | 1970-09-18 | 1972-06-20 | Tokyo Shibaura Electric Co | Method of making a honeycomb block collimator |
DE3900245A1 (en) * | 1988-01-06 | 1989-07-20 | Hitachi Ltd | MULTI-ELEMENT RADIATION DETECTOR |
JP2001099941A (en) * | 1999-09-30 | 2001-04-13 | Hitachi Metals Ltd | Radiation shielding plate, radiation detector, and manufacturing method of radiation shielding plate |
US6510195B1 (en) * | 2001-07-18 | 2003-01-21 | Koninklijke Philips Electronics, N.V. | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same |
US6934354B2 (en) * | 2003-05-02 | 2005-08-23 | General Electric Company | Collimator assembly having multi-piece components |
-
2007
- 2007-03-02 US US11/681,462 patent/US7544947B2/en active Active
- 2007-03-06 WO PCT/US2007/063407 patent/WO2007121000A2/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4414473A (en) * | 1981-02-23 | 1983-11-08 | General Electric Company | Resilient mount for modular detector cell |
US4417144A (en) * | 1981-02-23 | 1983-11-22 | General Electric Company | Modular solid-state detector cell |
US4429227A (en) * | 1981-12-28 | 1984-01-31 | General Electric Company | Solid state detector for CT comprising improvements in collimator plates |
US5866908A (en) * | 1996-02-20 | 1999-02-02 | Saint-Gobain/Norton Industrial Ceramics Corporation | Reflector compensation for scintillator array with low temperature expansion |
US5773829A (en) * | 1996-11-05 | 1998-06-30 | Iwanczyk; Jan S. | Radiation imaging detector |
US6667183B2 (en) * | 1999-05-14 | 2003-12-23 | Tower Semicondcutor Ltd. | Fabricating photodetecting integrated circuits with low cross talk |
Also Published As
Publication number | Publication date |
---|---|
WO2007121000A2 (en) | 2007-10-25 |
US20070210259A1 (en) | 2007-09-13 |
US7544947B2 (en) | 2009-06-09 |
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