WO2007130078A2 - Coupling energy in a plasmon wave to an electron beam - Google Patents
Coupling energy in a plasmon wave to an electron beam Download PDFInfo
- Publication number
- WO2007130078A2 WO2007130078A2 PCT/US2006/022679 US2006022679W WO2007130078A2 WO 2007130078 A2 WO2007130078 A2 WO 2007130078A2 US 2006022679 W US2006022679 W US 2006022679W WO 2007130078 A2 WO2007130078 A2 WO 2007130078A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transmission line
- ionizer
- charged particles
- plasmon wave
- generator mechanism
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H15/00—Methods or devices for acceleration of charged particles not otherwise provided for, e.g. wakefield accelerators
Definitions
- the present invention is related to U.S. Application No. 11/302,471 , entitled “Coupled Nano-Resonating Energy Emitting Structures,” filed December 14,
- This relates to plasmon waves, and, more particularly, to coupling energy in a plasmon wave to an electron beam.
- FlGS. 1-2 are top and side views, respectively, of a plasmon wave detector.
- a transmission line 100 is formed on a substrate 102.
- the transmission line 100 (preferably a metal line) preferably has a pointed end (denoted 104 in the drawing).
- the transmission line 100 may be straight or curved.
- a source of charged particles 106 and a corresponding detector 108 are positioned so that a beam of charged particles (denoted E in the drawing) generated by the source 106 is disrupted or deflected by a change in the magnetic and/or electric field surrounding the pointed end 104.
- the source of charged particles 106 and the corresponding detector are positioned near the pointed end 104 of the transmission line 100.
- the beam E may be substantially perpendicular to a central axis of the transmission line.
- the transmission line is preferably metal, those skilled in the art will realize, upon reading this description, that the transmission line may be formed of other non-metallic substances or of a combination of metallic and non-metallic substances.
- the transmission line may comprise gold (Au), silver (Ag), copper (Cu) or aluminum (Al).
- Au gold
- Ag silver
- Cu copper
- Al aluminum
- the end of the transmission line does not have to have a pointed end.
- the detector does not have to be at an end of the line, although such embodiments are presently considered to increase the field strength and thus make detection easier. For example, as shown in Fig.
- the charged particle beam can include ions (positive or negative), electrons, protons and the like.
- the beam may be produced by any source, including, e.g., without limitation an ion gun, a thermionic filament, a tungsten filament, a cathode, a field-emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer.
- the detector 108 is constructed and adapted to detect breaks or deflections of the beam E. Those skilled in the art will realize that the detector 108 can provide a signal indicative of the detected plasmon waves to other circuitry (not shown).
- the detector may be constructed, e.g., as described in related U.S. Patent Application No. 11/400,280, titled "Resonant Detector for Optical Signals," filed April 10, 2006, the contents of which have been fully incorporated herein by reference.
- Plasmon waves (denoted P) on the transmission line 100 travel in the direction of the pointed end 104. As the waves reach the pointed end 104, they cause disruption of an electric field around the point which, in turn, deflects the particle beam E. The detector 108 detects the deflection and thereby recognizes the presence and duration of the plasmon waves. Plasmon waves P will travel along the side surface 110 of the transmission line 100 and along the top surface 112.
- Plasmon waves may travel in the transmission line 100 for a variety of reasons, e.g., because of a light wave (W) incident on the transmission line.
- this invention contemplates using plasmon wave detector described herein, regardless of the source or cause of the wave.
- the plasmon wave may contain or be indicative of a data signal.
- shields or shielding structure(s) may be added to block out unwanted fields.
- Such shield(s) and/or shielding structure(s) may be formed on the same substrate as the source of charged particles and/or the transmission line so that only fields from the transmission line will interact with the particle beam.
- the devices according to embodiments of the present invention may be made, e.g., using techniques such as described in U.S. Patent Application No. 10/917,511, entitled "Patterning Thin Metal Film by Dry Reactive Ion Etching" and/or U.S. Application No.
- the nano- resonant structure may comprise any number of resonant microstructures constructed and adapted to produce EMR, e.g., as described above and/or in U.S. Application no. 11/325,448, entitled “Selectable Frequency Light Emitter from Single Metal Layer,” filed January 5, 2006, U.S. Application No. 11/325,432, entitled, “Matrix Array Display,” filed January 5, 2006, and U.S. Application No. 11/243,476, filed on October 5, 2005, entitled “Structures And Methods For Coupling Energy From An Electromagnetic Wave”; U.S. Application No. 11/243,477, filed on October 5, 2005, entitled “Electron beam induced resonance;” and U.S. Application No. 11/302,471, entitled “Coupled Nano-Resonating Energy Emitting Structures,” filed December 14, 2005.
Abstract
A device for coupling energy in a plasmon wave to an electron beam includes a metal transmission line having a pointed end; a generator mechanism constructed and adapted to generate a beam of charged particles; and a detector microcircuit disposed adjacent to the generator mechanism. The generator mechanism and the detector microcircuit are disposed adjacent the pointed end of the metal transmission line and wherein a beam of charged particles from the generator mechanism to the detector microcircuit electrically couples the plasmon wave traveling along the metal transmission line to the microcircuit.
Description
COUPLING ENERGY IN A PLASMON WAVE TO AN ELECTRON BEAM
COPYRIGHT NOTICE
[0001] A portion of the disclosure of this patent document contains material which is subject to copyright or mask work protection. The copyright or mask work owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent file or records, but otherwise reserves all copyright or mask work rights whatsoever.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0002] The present invention is related to U.S. Application No. 11/302,471 , entitled "Coupled Nano-Resonating Energy Emitting Structures," filed December 14,
2005, and U.S. Application No. 11/349,963, filed February 9, 2006, entitled "Method
And Structure For Coupling Two Microcircuits," the entire contents of each of which are incorporated herein by reference.
[0003] The present invention is related to the following co-pending U.S. Patent applications which are all commonly owned with the present application, the entire contents of each of which are incorporated herein by reference:
(1) U.S. Patent Application No. 11/238,991, filed September 30, 2005, entitled "Ultra-Small Resonating Charged Particle Beam Modulator";
(2) U.S. Patent Application No. 10/917,511 , filed on August 13, 2004, entitled "Patterning Thin Metal Film by Dry Reactive Ion Etching";
(3) U.S. Application No. 11/203,407, filed on August 15, 2005, entitled "Method Of Patterning Ultra-Small Structures";
(4) U.S. Application No. 11/243,476, filed on October 5, 2005, entitled "Structures And Methods For Coupling Energy From An Electromagnetic Wave";
(5) U.S. Application No. 11/243,477, filed on October 5, 2005, entitled "Electron beam induced resonance,"
(6) U.S. Application no. 11/325,448, entitled "Selectable Frequency Light Emitter from Single Metal Layer," filed January 5, 2006;
(7) U.S. Application No. 11/325,432, entitled, "Matrix Array Display," filed January 5, 2006,
(8) U.S. Application No. 11/410,905, entitled, "Coupling Light of Light Emitting Resonator to Waveguide," and filed April 26, 2006;
(9) U.S. Application No. 11/411,120, entitled "Free Space Interchip Communication," and filed April 26, 2006;
(10) U.S. Application No. 11/410,924, entitled, "Selectable Frequency EMR Emitter," filed April 26, 2006;
(11) U.S. Application No. 11/__,_, entitled, "Multiplexed Optical Communication between Chips on A Multi-Chip Module," filed on even date herewith [atty. docket 2549-0035];
(12) U.S. Patent Application No. 11/400,280, titled "Resonant Detector for Optical Signals," filed April 10, 2006.
FIELD OF THE DISCLOSURE
[0004] This relates to plasmon waves, and, more particularly, to coupling energy in a plasmon wave to an electron beam.
INTRODUCTION
[0005] It is known to couple light onto the surface of a metal, creating a so-called plasmon wave. This effect has been used, e.g., near-field optical microscopy. However, to date there has been no good way to electrically detect a plasmon wave and there has been limited practicality in trying to use plasmons to communicate data. [0006] It is desirable to electrically detect plasmon waves and to use plasmons to communicate data. One reason for this is because plasmons move faster than high frequency signals.
79
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] The following description, given with respect to the attached drawings, may be better understood with reference to the non-limiting examples of the drawings, wherein:
[0008] FlGS. 1-2 are top and side views, respectively, of a plasmon wave detector.
THE PRESENTLY PREFERRED EXEMPLARY EMBODIMENTS
[0009] As shown in FlG. 1 a transmission line 100 is formed on a substrate 102.
The transmission line 100 (preferably a metal line) preferably has a pointed end (denoted 104 in the drawing). The transmission line 100 may be straight or curved. A source of charged particles 106 and a corresponding detector 108 are positioned so that a beam of charged particles (denoted E in the drawing) generated by the source 106 is disrupted or deflected by a change in the magnetic and/or electric field surrounding the pointed end 104. Preferably the source of charged particles 106 and the corresponding detector are positioned near the pointed end 104 of the transmission line 100. In some cases the beam E may be substantially perpendicular to a central axis of the transmission line. [0010] Although the transmission line is preferably metal, those skilled in the art will realize, upon reading this description, that the transmission line may be formed of other non-metallic substances or of a combination of metallic and non-metallic substances. For example, the transmission line may comprise gold (Au), silver (Ag), copper (Cu) or aluminum (Al). Those skilled in the art will realize and understand, upon reading this description, that different and/or other metals may be used. [0011] Those skilled in the art will realize, upon reading this description, that the end of the transmission line does not have to have a pointed end. Further, the detector does not have to be at an end of the line, although such embodiments are presently considered to increase the field strength and thus make detection easier. For example, as shown in Fig. 3, the emitter and detector are on opposite sides of the line, and the particle beam is deflected so that it passes adjacent to (in this case over), the transmission line.
[0012] The charged particle beam can include ions (positive or negative), electrons, protons and the like. The beam may be produced by any source, including, e.g., without limitation an ion gun, a thermionic filament, a tungsten filament, a cathode, a field-emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer. [0013] The detector 108 is constructed and adapted to detect breaks or deflections of the beam E. Those skilled in the art will realize that the detector 108 can provide a signal indicative of the detected plasmon waves to other circuitry (not shown). The detector may be constructed, e.g., as described in related U.S. Patent Application No. 11/400,280, titled "Resonant Detector for Optical Signals," filed April 10, 2006, the contents of which have been fully incorporated herein by reference. [0014] Plasmon waves (denoted P) on the transmission line 100 travel in the direction of the pointed end 104. As the waves reach the pointed end 104, they cause disruption of an electric field around the point which, in turn, deflects the particle beam E. The detector 108 detects the deflection and thereby recognizes the presence and duration of the plasmon waves. Plasmon waves P will travel along the side surface 110 of the transmission line 100 and along the top surface 112.
[0015] Plasmon waves may travel in the transmission line 100 for a variety of reasons, e.g., because of a light wave (W) incident on the transmission line. However, this invention contemplates using plasmon wave detector described herein, regardless of the source or cause of the wave. The plasmon wave may contain or be indicative of a data signal.
[0016] Since the particle beam emitted by the source of charged particles may be deflected by any electric and/or magnetic field, one or more shields or shielding structure(s) may be added to block out unwanted fields. Such shield(s) and/or shielding structure(s) may be formed on the same substrate as the source of charged particles and/or the transmission line so that only fields from the transmission line will interact with the particle beam.
[0017] The devices according to embodiments of the present invention may be made, e.g., using techniques such as described in U.S. Patent Application No. 10/917,511, entitled "Patterning Thin Metal Film by Dry Reactive Ion Etching" and/or U.S. Application No. 11/203,407, entitled "Method Of Patterning Ultra-Small Structures," both of which have been incorporated herein by reference. The nano- resonant structure may comprise any number of resonant microstructures constructed and adapted to produce EMR, e.g., as described above and/or in U.S. Application no. 11/325,448, entitled "Selectable Frequency Light Emitter from Single Metal Layer," filed January 5, 2006, U.S. Application No. 11/325,432, entitled, "Matrix Array Display," filed January 5, 2006, and U.S. Application No. 11/243,476, filed on October 5, 2005, entitled "Structures And Methods For Coupling Energy From An Electromagnetic Wave"; U.S. Application No. 11/243,477, filed on October 5, 2005, entitled "Electron beam induced resonance;" and U.S. Application No. 11/302,471, entitled "Coupled Nano-Resonating Energy Emitting Structures," filed December 14, 2005.
[0018] While certain configurations of structures have been illustrated for the purposes of presenting the basic structures of the present invention, one of ordinary skill in the art will appreciate that other variations are possible which would still fall within the scope of the appended claims. While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims
1. A device for coupling energy in a plasmon wave to an electron beam, the device comprising: a transmission line; a generator mechanism constructed and adapted to generate a beam of charged particles along a path adjacent to the transmission line; and a detector microcircuit disposed along said path, at a location after said beam has gone past said line, wherein the generator mechanism and the detector microcircuit are disposed adjacent transmission line and wherein a beam of charged particles from the generator mechanism to the detector microcircuit electrically couples the plasmon wave traveling along the metal transmission line to the microcircuit.
2. A device as in claim 1 wherein the generator mechanism is selected from the group comprising: an ion gun, a thermionic filament, tungsten filament, a cathode, a vacuum triode, a field emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer.
3. A device as in claim 1 wherein the beam of charged particles comprises particles selected from the group comprising: positive ions, negative ions, electrons, and protons.
4. A device as in claim 1 wherein the detector microcircuit detects the presence of a plasmon wave in the transmission line.
5. A device as in claim 1 wherein the detector microcircuit detects the absence of a plasmon wave in the metal transmission line.
6. A device as in claim 1 wherein the transmission line is formed from a metal.
7. A device as in claim 6 wherein the metal comprises a metal selected from the group comprising: gold (Au), silver (Ag), copper (Cu) and aluminum (Al)
8. A device as in claim 1 wherein the transmission line has a pointed end and wherein the generator mechanism and the detector microcircuit are disposed adjacent the pointed end of the transmission line.
9. A device as in claim 1 further comprising: shielding structure disposed to prevent interference with the beam of charged particles by sources of electromagnetic radiation (EMR) other than EMR from the transmission line.
10. A method comprising: generating a beam of charged particles adjacent a transmission line; and detecting changes in said beam of charged particles, wherein said changes are indicative of the presence or absence of a plasmon wave in the metal transmission line.
11. A method as in claim 10 wherein the beam of charged particles is generated by a mechanism selected from the group comprising: an ion gun, a thermionic filament, a cathode, vacuum triode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer.
12. A method as in claim 10 wherein the beam of charged particles comprises particles selected from the group comprising: positive ions, negative ions, electrons, and protons.
13. A method as in claim 12 wherein the step of detecting indicates the presence of a plasmon wave in the transmission line.
14. A method as in claim 12 wherein the step of detecting indicates the absence of a plasmon wave in the metal transmission line.
15. A device for coupling energy in a plasmon wave to an electron beam, the device comprising: a metal transmission line having a pointed end, the metal comprising silver (Ag); a generator mechanism constructed and adapted to generate a beam of charged particles, wherein the generator mechanism is selected from the group comprising: an ion gun, a thermionic filament, tungsten filament, a cathode, a vacuum triode, a field emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer; a detector microcircuit disposed adjacent to the generator mechanism; and shielding structure disposed to prevent interference with the beam of charged particles by sources of electromagnetic radiation (EMR) other than EMR from the transmission line, wherein the generator mechanism and the detector microcircuit are disposed adjacent the pointed end of the transmission line and wherein a beam of charged particles from the generator mechanism to the detector microcircuit electrically couples the plasmon wave traveling along the metal transmission line to the microcircuit.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/418,078 US7732786B2 (en) | 2006-05-05 | 2006-05-05 | Coupling energy in a plasmon wave to an electron beam |
US11/418,078 | 2006-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007130078A2 true WO2007130078A2 (en) | 2007-11-15 |
WO2007130078A3 WO2007130078A3 (en) | 2009-04-16 |
Family
ID=38660604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/022679 WO2007130078A2 (en) | 2006-05-05 | 2006-06-09 | Coupling energy in a plasmon wave to an electron beam |
Country Status (3)
Country | Link |
---|---|
US (1) | US7732786B2 (en) |
TW (1) | TW200743128A (en) |
WO (1) | WO2007130078A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7961995B2 (en) * | 2008-09-16 | 2011-06-14 | The Aerospace Corporation | Electrically tunable plasmon light tunneling junction |
US7935930B1 (en) * | 2009-07-04 | 2011-05-03 | Jonathan Gorrell | Coupling energy from a two dimensional array of nano-resonanting structures |
JP5344616B2 (en) * | 2009-11-18 | 2013-11-20 | キヤノン株式会社 | Electrophotographic image forming apparatus |
WO2021216424A1 (en) * | 2020-04-20 | 2021-10-28 | The Regents Of The University Of The Colorado, A Body Corporate | Nanostructure nanoplasmonic accelerator, high-energy photon source, and related methods |
US20230191916A1 (en) * | 2021-12-20 | 2023-06-22 | Micah Skidmore | Novel electromagnetic propulsion and levitation technology |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5263043A (en) * | 1990-08-31 | 1993-11-16 | Trustees Of Dartmouth College | Free electron laser utilizing grating coupling |
US20040240035A1 (en) * | 2003-05-29 | 2004-12-02 | Stanislav Zhilkov | Method of modulation and electron modulator for optical communication and data transmission |
Family Cites Families (319)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2634372A (en) * | 1953-04-07 | Super high-frequency electromag | ||
US1948384A (en) * | 1932-01-26 | 1934-02-20 | Research Corp | Method and apparatus for the acceleration of ions |
US2307086A (en) * | 1941-05-07 | 1943-01-05 | Univ Leland Stanford Junior | High frequency electrical apparatus |
US2431396A (en) | 1942-12-21 | 1947-11-25 | Rca Corp | Current magnitude-ratio responsive amplifier |
US2397905A (en) * | 1944-08-07 | 1946-04-09 | Int Harvester Co | Thrust collar construction |
US2473477A (en) | 1946-07-24 | 1949-06-14 | Raythcon Mfg Company | Magnetic induction device |
US2932798A (en) * | 1956-01-05 | 1960-04-12 | Research Corp | Imparting energy to charged particles |
US2944183A (en) | 1957-01-25 | 1960-07-05 | Bell Telephone Labor Inc | Internal cavity reflex klystron tuned by a tightly coupled external cavity |
US2966611A (en) | 1959-07-21 | 1960-12-27 | Sperry Rand Corp | Ruggedized klystron tuner |
US3231779A (en) * | 1962-06-25 | 1966-01-25 | Gen Electric | Elastic wave responsive apparatus |
US3274428A (en) | 1962-06-29 | 1966-09-20 | English Electric Valve Co Ltd | Travelling wave tube with band pass slow wave structure whose frequency characteristic changes along its length |
GB1054461A (en) * | 1963-02-06 | |||
US3315117A (en) * | 1963-07-15 | 1967-04-18 | Burton J Udelson | Electrostatically focused electron beam phase shifter |
US3387169A (en) | 1965-05-07 | 1968-06-04 | Sfd Lab Inc | Slow wave structure of the comb type having strap means connecting the teeth to form iterative inductive shunt loadings |
US4746201A (en) | 1967-03-06 | 1988-05-24 | Gordon Gould | Polarizing apparatus employing an optical element inclined at brewster's angle |
US4053845A (en) | 1967-03-06 | 1977-10-11 | Gordon Gould | Optically pumped laser amplifiers |
US3546524A (en) | 1967-11-24 | 1970-12-08 | Varian Associates | Linear accelerator having the beam injected at a position of maximum r.f. accelerating field |
US3571642A (en) * | 1968-01-17 | 1971-03-23 | Ca Atomic Energy Ltd | Method and apparatus for interleaved charged particle acceleration |
US3543147A (en) | 1968-03-29 | 1970-11-24 | Atomic Energy Commission | Phase angle measurement system for determining and controlling the resonance of the radio frequency accelerating cavities for high energy charged particle accelerators |
US3586899A (en) | 1968-06-12 | 1971-06-22 | Ibm | Apparatus using smith-purcell effect for frequency modulation and beam deflection |
US3560694A (en) * | 1969-01-21 | 1971-02-02 | Varian Associates | Microwave applicator employing flat multimode cavity for treating webs |
US3761828A (en) | 1970-12-10 | 1973-09-25 | J Pollard | Linear particle accelerator with coast through shield |
US3886399A (en) | 1973-08-20 | 1975-05-27 | Varian Associates | Electron beam electrical power transmission system |
US3923568A (en) | 1974-01-14 | 1975-12-02 | Int Plasma Corp | Dry plasma process for etching noble metal |
DE2429612C2 (en) | 1974-06-20 | 1984-08-02 | Siemens AG, 1000 Berlin und 8000 München | Acousto-optical data input converter for block-organized holographic data storage and method for its control |
US4068948A (en) * | 1974-07-04 | 1978-01-17 | Gerhard Ritzerfeld | Copying apparatus |
US4704583A (en) | 1974-08-16 | 1987-11-03 | Gordon Gould | Light amplifiers employing collisions to produce a population inversion |
JPS6056238B2 (en) | 1979-06-01 | 1985-12-09 | 株式会社井上ジャパックス研究所 | Electroplating method |
US4296354A (en) | 1979-11-28 | 1981-10-20 | Varian Associates, Inc. | Traveling wave tube with frequency variable sever length |
US4282436A (en) | 1980-06-04 | 1981-08-04 | The United States Of America As Represented By The Secretary Of The Navy | Intense ion beam generation with an inverse reflex tetrode (IRT) |
US4453108A (en) | 1980-11-21 | 1984-06-05 | William Marsh Rice University | Device for generating RF energy from electromagnetic radiation of another form such as light |
US4661783A (en) * | 1981-03-18 | 1987-04-28 | The United States Of America As Represented By The Secretary Of The Navy | Free electron and cyclotron resonance distributed feedback lasers and masers |
US4450554A (en) | 1981-08-10 | 1984-05-22 | International Telephone And Telegraph Corporation | Asynchronous integrated voice and data communication system |
US4528659A (en) | 1981-12-17 | 1985-07-09 | International Business Machines Corporation | Interleaved digital data and voice communications system apparatus and method |
US4589107A (en) | 1982-11-30 | 1986-05-13 | Itt Corporation | Simultaneous voice and data communication and data base access in a switching system using a combined voice conference and data base processing module |
US4652703A (en) * | 1983-03-01 | 1987-03-24 | Racal Data Communications Inc. | Digital voice transmission having improved echo suppression |
US4482779A (en) | 1983-04-19 | 1984-11-13 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Inelastic tunnel diodes |
US4598397A (en) | 1984-02-21 | 1986-07-01 | Cxc Corporation | Microtelephone controller |
US4713581A (en) | 1983-08-09 | 1987-12-15 | Haimson Research Corporation | Method and apparatus for accelerating a particle beam |
US4829527A (en) | 1984-04-23 | 1989-05-09 | The United States Of America As Represented By The Secretary Of The Army | Wideband electronic frequency tuning for orotrons |
FR2564646B1 (en) * | 1984-05-21 | 1986-09-26 | Centre Nat Rech Scient | IMPROVED FREE ELECTRON LASER |
DE3479468D1 (en) | 1984-05-23 | 1989-09-21 | Ibm | Digital transmission system for a packetized voice |
US4819228A (en) * | 1984-10-29 | 1989-04-04 | Stratacom Inc. | Synchronous packet voice/data communication system |
GB2171576B (en) | 1985-02-04 | 1989-07-12 | Mitel Telecom Ltd | Spread spectrum leaky feeder communication system |
US4675863A (en) * | 1985-03-20 | 1987-06-23 | International Mobile Machines Corp. | Subscriber RF telephone system for providing multiple speech and/or data signals simultaneously over either a single or a plurality of RF channels |
JPS6229135A (en) | 1985-07-29 | 1987-02-07 | Advantest Corp | Charged particle beam exposure and device thereof |
IL79775A (en) | 1985-08-23 | 1990-06-10 | Republic Telcom Systems Corp | Multiplexed digital packet telephone system |
US4727550A (en) | 1985-09-19 | 1988-02-23 | Chang David B | Radiation source |
US4740963A (en) * | 1986-01-30 | 1988-04-26 | Lear Siegler, Inc. | Voice and data communication system |
US4712042A (en) | 1986-02-03 | 1987-12-08 | Accsys Technology, Inc. | Variable frequency RFQ linear accelerator |
JPS62142863U (en) | 1986-03-05 | 1987-09-09 | ||
JPH0763171B2 (en) | 1986-06-10 | 1995-07-05 | 株式会社日立製作所 | Data / voice transmission / reception method |
US4761059A (en) | 1986-07-28 | 1988-08-02 | Rockwell International Corporation | External beam combining of multiple lasers |
US4813040A (en) * | 1986-10-31 | 1989-03-14 | Futato Steven P | Method and apparatus for transmitting digital data and real-time digitalized voice information over a communications channel |
US5163118A (en) | 1986-11-10 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Air Force | Lattice mismatched hetrostructure optical waveguide |
JPH07118749B2 (en) * | 1986-11-14 | 1995-12-18 | 株式会社日立製作所 | Voice / data transmission equipment |
US4806859A (en) * | 1987-01-27 | 1989-02-21 | Ford Motor Company | Resonant vibrating structures with driving sensing means for noncontacting position and pick up sensing |
KR960007442B1 (en) * | 1987-02-09 | 1996-05-31 | 가부시끼사이샤 티엘브이 | Steam trap operation detector |
US4932022A (en) | 1987-10-07 | 1990-06-05 | Telenova, Inc. | Integrated voice and data telephone system |
US4864131A (en) | 1987-11-09 | 1989-09-05 | The University Of Michigan | Positron microscopy |
US4838021A (en) | 1987-12-11 | 1989-06-13 | Hughes Aircraft Company | Electrostatic ion thruster with improved thrust modulation |
US4890282A (en) | 1988-03-08 | 1989-12-26 | Network Equipment Technologies, Inc. | Mixed mode compression for data transmission |
US4866704A (en) | 1988-03-16 | 1989-09-12 | California Institute Of Technology | Fiber optic voice/data network |
US4887265A (en) | 1988-03-18 | 1989-12-12 | Motorola, Inc. | Packet-switched cellular telephone system |
US5185073A (en) * | 1988-06-21 | 1993-02-09 | International Business Machines Corporation | Method of fabricating nendritic materials |
JPH0744511B2 (en) | 1988-09-14 | 1995-05-15 | 富士通株式会社 | High suburb rate multiplexing method |
US5130985A (en) | 1988-11-25 | 1992-07-14 | Hitachi, Ltd. | Speech packet communication system and method |
FR2641093B1 (en) | 1988-12-23 | 1994-04-29 | Alcatel Business Systems | |
US4981371A (en) * | 1989-02-17 | 1991-01-01 | Itt Corporation | Integrated I/O interface for communication terminal |
US5023563A (en) | 1989-06-08 | 1991-06-11 | Hughes Aircraft Company | Upshifted free electron laser amplifier |
US5036513A (en) | 1989-06-21 | 1991-07-30 | Academy Of Applied Science | Method of and apparatus for integrated voice (audio) communication simultaneously with "under voice" user-transparent digital data between telephone instruments |
US5157000A (en) | 1989-07-10 | 1992-10-20 | Texas Instruments Incorporated | Method for dry etching openings in integrated circuit layers |
US5155726A (en) | 1990-01-22 | 1992-10-13 | Digital Equipment Corporation | Station-to-station full duplex communication in a token ring local area network |
US5235248A (en) | 1990-06-08 | 1993-08-10 | The United States Of America As Represented By The United States Department Of Energy | Method and split cavity oscillator/modulator to generate pulsed particle beams and electromagnetic fields |
US5127001A (en) | 1990-06-22 | 1992-06-30 | Unisys Corporation | Conference call arrangement for distributed network |
US5113141A (en) | 1990-07-18 | 1992-05-12 | Science Applications International Corporation | Four-fingers RFQ linac structure |
US5268693A (en) | 1990-08-31 | 1993-12-07 | Trustees Of Dartmouth College | Semiconductor film free electron laser |
US5128729A (en) | 1990-11-13 | 1992-07-07 | Motorola, Inc. | Complex opto-isolator with improved stand-off voltage stability |
US5214650A (en) | 1990-11-19 | 1993-05-25 | Ag Communication Systems Corporation | Simultaneous voice and data system using the existing two-wire inter-face |
US5302240A (en) * | 1991-01-22 | 1994-04-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US5187591A (en) * | 1991-01-24 | 1993-02-16 | Micom Communications Corp. | System for transmitting and receiving aural information and modulated data |
US5341374A (en) | 1991-03-01 | 1994-08-23 | Trilan Systems Corporation | Communication network integrating voice data and video with distributed call processing |
US5150410A (en) | 1991-04-11 | 1992-09-22 | Itt Corporation | Secure digital conferencing system |
US5283819A (en) * | 1991-04-25 | 1994-02-01 | Compuadd Corporation | Computing and multimedia entertainment system |
FR2677490B1 (en) | 1991-06-07 | 1997-05-16 | Thomson Csf | SEMICONDUCTOR OPTICAL TRANSCEIVER. |
GB9113684D0 (en) | 1991-06-25 | 1991-08-21 | Smiths Industries Plc | Display filter arrangements |
US5229782A (en) * | 1991-07-19 | 1993-07-20 | Conifer Corporation | Stacked dual dipole MMDS feed |
US5199918A (en) | 1991-11-07 | 1993-04-06 | Microelectronics And Computer Technology Corporation | Method of forming field emitter device with diamond emission tips |
US5305312A (en) * | 1992-02-07 | 1994-04-19 | At&T Bell Laboratories | Apparatus for interfacing analog telephones and digital data terminals to an ISDN line |
US5466929A (en) | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
EP0909972A3 (en) | 1992-03-13 | 1999-06-09 | Kopin Corporation | Method of forming a high resolution liquid crystal display device |
WO1993021663A1 (en) | 1992-04-08 | 1993-10-28 | Georgia Tech Research Corporation | Process for lift-off of thin film materials from a growth substrate |
US5233623A (en) | 1992-04-29 | 1993-08-03 | Research Foundation Of State University Of New York | Integrated semiconductor laser with electronic directivity and focusing control |
US5282197A (en) * | 1992-05-15 | 1994-01-25 | International Business Machines | Low frequency audio sub-channel embedded signalling |
US5562838A (en) | 1993-03-29 | 1996-10-08 | Martin Marietta Corporation | Optical light pipe and microwave waveguide interconnects in multichip modules formed using adaptive lithography |
US5539414A (en) | 1993-09-02 | 1996-07-23 | Inmarsat | Folded dipole microstrip antenna |
TW255015B (en) | 1993-11-05 | 1995-08-21 | Motorola Inc | |
US5578909A (en) | 1994-07-15 | 1996-11-26 | The Regents Of The Univ. Of California | Coupled-cavity drift-tube linac |
US5485277A (en) * | 1994-07-26 | 1996-01-16 | Physical Optics Corporation | Surface plasmon resonance sensor and methods for the utilization thereof |
US5608263A (en) | 1994-09-06 | 1997-03-04 | The Regents Of The University Of Michigan | Micromachined self packaged circuits for high-frequency applications |
JP2770755B2 (en) | 1994-11-16 | 1998-07-02 | 日本電気株式会社 | Field emission type electron gun |
US5637966A (en) | 1995-02-06 | 1997-06-10 | The Regents Of The University Of Michigan | Method for generating a plasma wave to accelerate electrons |
US5504341A (en) * | 1995-02-17 | 1996-04-02 | Zimec Consulting, Inc. | Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system |
JP2921430B2 (en) | 1995-03-03 | 1999-07-19 | 双葉電子工業株式会社 | Optical writing element |
US5604352A (en) * | 1995-04-25 | 1997-02-18 | Raychem Corporation | Apparatus comprising voltage multiplication components |
US5705443A (en) * | 1995-05-30 | 1998-01-06 | Advanced Technology Materials, Inc. | Etching method for refractory materials |
AU7526496A (en) * | 1995-10-25 | 1997-05-15 | University Of Washington | Surface plasmon resonance electrode as chemical sensor |
JP3487699B2 (en) | 1995-11-08 | 2004-01-19 | 株式会社日立製作所 | Ultrasonic treatment method and apparatus |
US5889449A (en) | 1995-12-07 | 1999-03-30 | Space Systems/Loral, Inc. | Electromagnetic transmission line elements having a boundary between materials of high and low dielectric constants |
KR0176876B1 (en) | 1995-12-12 | 1999-03-20 | 구자홍 | Magnetron |
JPH09223475A (en) | 1996-02-19 | 1997-08-26 | Nikon Corp | Electromagnetic deflector and charge particle beam transfer apparatus using thereof |
US5825140A (en) | 1996-02-29 | 1998-10-20 | Nissin Electric Co., Ltd. | Radio-frequency type charged particle accelerator |
US5663971A (en) | 1996-04-02 | 1997-09-02 | The Regents Of The University Of California, Office Of Technology Transfer | Axial interaction free-electron laser |
US5821705A (en) | 1996-06-25 | 1998-10-13 | The United States Of America As Represented By The United States Department Of Energy | Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators |
WO1998005920A1 (en) | 1996-08-08 | 1998-02-12 | William Marsh Rice University | Macroscopically manipulable nanoscale devices made from nanotube assemblies |
KR100226752B1 (en) | 1996-08-26 | 1999-10-15 | 구본준 | Method for forming multi-metal interconnection layer of semiconductor device |
US5889797A (en) * | 1996-08-26 | 1999-03-30 | The Regents Of The University Of California | Measuring short electron bunch lengths using coherent smith-purcell radiation |
US5811943A (en) | 1996-09-23 | 1998-09-22 | Schonberg Research Corporation | Hollow-beam microwave linear accelerator |
US6060833A (en) | 1996-10-18 | 2000-05-09 | Velazco; Jose E. | Continuous rotating-wave electron beam accelerator |
US5780970A (en) | 1996-10-28 | 1998-07-14 | University Of Maryland | Multi-stage depressed collector for small orbit gyrotrons |
US5790585A (en) | 1996-11-12 | 1998-08-04 | The Trustees Of Dartmouth College | Grating coupling free electron laser apparatus and method |
US5744919A (en) * | 1996-12-12 | 1998-04-28 | Mishin; Andrey V. | CW particle accelerator with low particle injection velocity |
US5757009A (en) | 1996-12-27 | 1998-05-26 | Northrop Grumman Corporation | Charged particle beam expander |
JPH10200204A (en) * | 1997-01-06 | 1998-07-31 | Fuji Xerox Co Ltd | Surface-emitting semiconductor laser, manufacturing method thereof, and surface-emitting semiconductor laser array using the same |
US6624916B1 (en) | 1997-02-11 | 2003-09-23 | Quantumbeam Limited | Signalling system |
AU748939B2 (en) * | 1997-02-20 | 2002-06-13 | Regents Of The University Of California, The | Plasmon resonant particles, methods and apparatus |
US6008496A (en) | 1997-05-05 | 1999-12-28 | University Of Florida | High resolution resonance ionization imaging detector and method |
US5821836A (en) | 1997-05-23 | 1998-10-13 | The Regents Of The University Of Michigan | Miniaturized filter assembly |
JP4317269B2 (en) * | 1997-06-19 | 2009-08-19 | ヨーロピアン・オーガニゼーション・フォア・ニュークリア・リサーチ | Method of exposure to neutron flux, method of generating useful isotopes, and method of converting long-lived isotopes |
US6040625A (en) * | 1997-09-25 | 2000-03-21 | I/O Sensors, Inc. | Sensor package arrangement |
US5972193A (en) | 1997-10-10 | 1999-10-26 | Industrial Technology Research Institute | Method of manufacturing a planar coil using a transparency substrate |
JP2981543B2 (en) * | 1997-10-27 | 1999-11-22 | 金沢大学長 | Electron tube type one-way optical amplifier |
US6117784A (en) | 1997-11-12 | 2000-09-12 | International Business Machines Corporation | Process for integrated circuit wiring |
US6143476A (en) | 1997-12-12 | 2000-11-07 | Applied Materials Inc | Method for high temperature etching of patterned layers using an organic mask stack |
WO1999031514A1 (en) * | 1997-12-15 | 1999-06-24 | Seiko Instruments Inc. | Optical waveguide probe and its manufacturing method |
KR100279737B1 (en) | 1997-12-19 | 2001-02-01 | 정선종 | Short-wavelength photoelectric device composed of field emission device and optical device and fabrication method thereof |
US5963857A (en) | 1998-01-20 | 1999-10-05 | Lucent Technologies, Inc. | Article comprising a micro-machined filter |
US6338968B1 (en) * | 1998-02-02 | 2002-01-15 | Signature Bioscience, Inc. | Method and apparatus for detecting molecular binding events |
EP0969493A1 (en) | 1998-07-03 | 2000-01-05 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Apparatus and method for examining specimen with a charged particle beam |
JP2972879B1 (en) | 1998-08-18 | 1999-11-08 | 金沢大学長 | One-way optical amplifier |
US6316876B1 (en) | 1998-08-19 | 2001-11-13 | Eiji Tanabe | High gradient, compact, standing wave linear accelerator structure |
JP3666267B2 (en) | 1998-09-18 | 2005-06-29 | 株式会社日立製作所 | Automatic charged particle beam scanning inspection system |
US6210555B1 (en) * | 1999-01-29 | 2001-04-03 | Faraday Technology Marketing Group, Llc | Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating |
WO2000022193A2 (en) | 1998-10-14 | 2000-04-20 | Faraday Technology, Inc. | Electrodeposition of metals in small recesses using modulated electric fields |
US6524461B2 (en) * | 1998-10-14 | 2003-02-25 | Faraday Technology Marketing Group, Llc | Electrodeposition of metals in small recesses using modulated electric fields |
US6577040B2 (en) | 1999-01-14 | 2003-06-10 | The Regents Of The University Of Michigan | Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices |
US6297511B1 (en) | 1999-04-01 | 2001-10-02 | Raytheon Company | High frequency infrared emitter |
JP3465627B2 (en) | 1999-04-28 | 2003-11-10 | 株式会社村田製作所 | Electronic components, dielectric resonators, dielectric filters, duplexers, communication equipment |
US6724486B1 (en) * | 1999-04-28 | 2004-04-20 | Zygo Corporation | Helium- Neon laser light source generating two harmonically related, single- frequency wavelengths for use in displacement and dispersion measuring interferometry |
JP3057229B1 (en) | 1999-05-20 | 2000-06-26 | 金沢大学長 | Electromagnetic wave amplifier and electromagnetic wave generator |
JP3792126B2 (en) | 1999-05-25 | 2006-07-05 | ナヴォテック・ゲーエムベーハー | Small terahertz radiation source |
TW408496B (en) * | 1999-06-21 | 2000-10-11 | United Microelectronics Corp | The structure of image sensor |
US6384406B1 (en) * | 1999-08-05 | 2002-05-07 | Microvision, Inc. | Active tuning of a torsional resonant structure |
US6309528B1 (en) | 1999-10-15 | 2001-10-30 | Faraday Technology Marketing Group, Llc | Sequential electrodeposition of metals using modulated electric fields for manufacture of circuit boards having features of different sizes |
US6870438B1 (en) * | 1999-11-10 | 2005-03-22 | Kyocera Corporation | Multi-layered wiring board for slot coupling a transmission line to a waveguide |
FR2803950B1 (en) * | 2000-01-14 | 2002-03-01 | Centre Nat Rech Scient | VERTICAL METAL MICROSONATOR PHOTODETECTION DEVICE AND MANUFACTURING METHOD THEREOF |
EP1122761B1 (en) | 2000-02-01 | 2004-05-26 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Optical column for charged particle beam device |
US6593539B1 (en) | 2000-02-25 | 2003-07-15 | George Miley | Apparatus and methods for controlling charged particles |
JP3667188B2 (en) | 2000-03-03 | 2005-07-06 | キヤノン株式会社 | Electron beam excitation laser device and multi-electron beam excitation laser device |
JP2001273861A (en) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | Charged beam apparatus and pattern incline observation method |
DE10019359C2 (en) | 2000-04-18 | 2002-11-07 | Nanofilm Technologie Gmbh | SPR sensor |
US6700748B1 (en) * | 2000-04-28 | 2004-03-02 | International Business Machines Corporation | Methods for creating ground paths for ILS |
US6453087B2 (en) | 2000-04-28 | 2002-09-17 | Confluent Photonics Co. | Miniature monolithic optical add-drop multiplexer |
JP2002121699A (en) | 2000-05-25 | 2002-04-26 | Nippon Techno Kk | Electroplating method using combination of vibrating flow and impulsive plating current of plating bath |
US6829286B1 (en) | 2000-05-26 | 2004-12-07 | Opticomp Corporation | Resonant cavity enhanced VCSEL/waveguide grating coupler |
US6800877B2 (en) | 2000-05-26 | 2004-10-05 | Exaconnect Corp. | Semi-conductor interconnect using free space electron switch |
US7064500B2 (en) | 2000-05-26 | 2006-06-20 | Exaconnect Corp. | Semi-conductor interconnect using free space electron switch |
US6407516B1 (en) | 2000-05-26 | 2002-06-18 | Exaconnect Inc. | Free space electron switch |
US6801002B2 (en) * | 2000-05-26 | 2004-10-05 | Exaconnect Corp. | Use of a free space electron switch in a telecommunications network |
US6545425B2 (en) * | 2000-05-26 | 2003-04-08 | Exaconnect Corp. | Use of a free space electron switch in a telecommunications network |
US7257327B2 (en) * | 2000-06-01 | 2007-08-14 | Raytheon Company | Wireless communication system with high efficiency/high power optical source |
US6373194B1 (en) * | 2000-06-01 | 2002-04-16 | Raytheon Company | Optical magnetron for high efficiency production of optical radiation |
US6972421B2 (en) | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
EP1301822A1 (en) * | 2000-06-15 | 2003-04-16 | California Institute Of Technology | Direct electrical-to-optical conversion and light modulation in micro whispering-gallery-mode resonators |
JP3993094B2 (en) * | 2000-07-27 | 2007-10-17 | 株式会社荏原製作所 | Sheet beam inspection system |
US6441298B1 (en) | 2000-08-15 | 2002-08-27 | Nec Research Institute, Inc | Surface-plasmon enhanced photovoltaic device |
WO2002020390A2 (en) * | 2000-09-08 | 2002-03-14 | Ball Ronald H | Illumination system for escalator handrails |
IL155030A0 (en) | 2000-09-22 | 2003-10-31 | Vermont Photonics | Apparatuses and methods for generating coherent electromagnetic laser radiation |
JP3762208B2 (en) | 2000-09-29 | 2006-04-05 | 株式会社東芝 | Optical wiring board manufacturing method |
EP1340241B1 (en) | 2000-12-01 | 2011-05-18 | Yeda Research And Development Co., Ltd. | Device and method for the examination of samples in a non-vacuum environment using a scanning electron microscope |
US6777244B2 (en) | 2000-12-06 | 2004-08-17 | Hrl Laboratories, Llc | Compact sensor using microcavity structures |
US20020071457A1 (en) | 2000-12-08 | 2002-06-13 | Hogan Josh N. | Pulsed non-linear resonant cavity |
KR20020061103A (en) | 2001-01-12 | 2002-07-22 | 후루까와덴끼고오교 가부시끼가이샤 | Antenna device and terminal with the antenna device |
US6603781B1 (en) | 2001-01-19 | 2003-08-05 | Siros Technologies, Inc. | Multi-wavelength transmitter |
US6636653B2 (en) | 2001-02-02 | 2003-10-21 | Teravicta Technologies, Inc. | Integrated optical micro-electromechanical systems and methods of fabricating and operating the same |
US6603915B2 (en) | 2001-02-05 | 2003-08-05 | Fujitsu Limited | Interposer and method for producing a light-guiding structure |
US6636534B2 (en) | 2001-02-26 | 2003-10-21 | University Of Hawaii | Phase displacement free-electron laser |
KR100695978B1 (en) * | 2001-02-28 | 2007-03-15 | 가부시끼가이샤 히다치 세이사꾸쇼 | Method and apparatus for measuring physical properties of micro region |
CN1319208C (en) | 2001-03-02 | 2007-05-30 | 松下电器产业株式会社 | Dielectric filter, antenna duplexer and communication device with filter |
US6493424B2 (en) | 2001-03-05 | 2002-12-10 | Siemens Medical Solutions Usa, Inc. | Multi-mode operation of a standing wave linear accelerator |
SE520339C2 (en) | 2001-03-07 | 2003-06-24 | Acreo Ab | Electrochemical transistor device, used for e.g. polymer batteries, includes active element having transistor channel made of organic material and gate electrode where voltage is applied to control electron flow |
US7038399B2 (en) | 2001-03-13 | 2006-05-02 | Color Kinetics Incorporated | Methods and apparatus for providing power to lighting devices |
US6819432B2 (en) | 2001-03-14 | 2004-11-16 | Hrl Laboratories, Llc | Coherent detecting receiver using a time delay interferometer and adaptive beam combiner |
EP1243428A1 (en) | 2001-03-20 | 2002-09-25 | The Technology Partnership Public Limited Company | Led print head for electrophotographic printer |
US7077982B2 (en) | 2001-03-23 | 2006-07-18 | Fuji Photo Film Co., Ltd. | Molecular electric wire, molecular electric wire circuit using the same and process for producing the molecular electric wire circuit |
US6788847B2 (en) | 2001-04-05 | 2004-09-07 | Luxtera, Inc. | Photonic input/output port |
US6912330B2 (en) | 2001-05-17 | 2005-06-28 | Sioptical Inc. | Integrated optical/electronic circuits and associated methods of simultaneous generation thereof |
US7010183B2 (en) * | 2002-03-20 | 2006-03-07 | The Regents Of The University Of Colorado | Surface plasmon devices |
US7177515B2 (en) * | 2002-03-20 | 2007-02-13 | The Regents Of The University Of Colorado | Surface plasmon devices |
US6525477B2 (en) * | 2001-05-29 | 2003-02-25 | Raytheon Company | Optical magnetron generator |
US7068948B2 (en) | 2001-06-13 | 2006-06-27 | Gazillion Bits, Inc. | Generation of optical signals with return-to-zero format |
JP3698075B2 (en) | 2001-06-20 | 2005-09-21 | 株式会社日立製作所 | Semiconductor substrate inspection method and apparatus |
US6782205B2 (en) | 2001-06-25 | 2004-08-24 | Silicon Light Machines | Method and apparatus for dynamic equalization in wavelength division multiplexing |
US20030012925A1 (en) * | 2001-07-16 | 2003-01-16 | Motorola, Inc. | Process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including an etch stop layer used for back side processing |
EP1278314B1 (en) * | 2001-07-17 | 2007-01-10 | Alcatel | Monitoring unit for optical burst signals |
US20030034535A1 (en) * | 2001-08-15 | 2003-02-20 | Motorola, Inc. | Mems devices suitable for integration with chip having integrated silicon and compound semiconductor devices, and methods for fabricating such devices |
US6990257B2 (en) | 2001-09-10 | 2006-01-24 | California Institute Of Technology | Electronically biased strip loaded waveguide |
US6640023B2 (en) | 2001-09-27 | 2003-10-28 | Memx, Inc. | Single chip optical cross connect |
JP2003209411A (en) | 2001-10-30 | 2003-07-25 | Matsushita Electric Ind Co Ltd | High frequency module and production method for high frequency module |
EP1444718A4 (en) | 2001-11-13 | 2005-11-23 | Nanosciences Corp | Photocathode |
US7248297B2 (en) | 2001-11-30 | 2007-07-24 | The Board Of Trustees Of The Leland Stanford Junior University | Integrated color pixel (ICP) |
US6635949B2 (en) * | 2002-01-04 | 2003-10-21 | Intersil Americas Inc. | Symmetric inducting device for an integrated circuit having a ground shield |
EP1471828A1 (en) | 2002-01-18 | 2004-11-03 | California Institute Of Technology | Method and apparatus for nanomagnetic manipulation and sensing |
US6950220B2 (en) | 2002-03-18 | 2005-09-27 | E Ink Corporation | Electro-optic displays, and methods for driving same |
US6738176B2 (en) | 2002-04-30 | 2004-05-18 | Mario Rabinowitz | Dynamic multi-wavelength switching ensemble |
AU2003272195A1 (en) | 2002-04-30 | 2004-01-06 | Hrl Laboratories, Llc | Quartz-based nanoresonators and method of fabricating same |
JP2003331774A (en) | 2002-05-16 | 2003-11-21 | Toshiba Corp | Electron beam equipment and device manufacturing method using the equipment |
JP2004014943A (en) * | 2002-06-10 | 2004-01-15 | Sony Corp | Multibeam semiconductor laser, semiconductor light emitting device, and semiconductor device |
US6887773B2 (en) | 2002-06-19 | 2005-05-03 | Luxtera, Inc. | Methods of incorporating germanium within CMOS process |
US20040011432A1 (en) * | 2002-07-17 | 2004-01-22 | Podlaha Elizabeth J. | Metal alloy electrodeposited microstructures |
EP1388883B1 (en) | 2002-08-07 | 2013-06-05 | Fei Company | Coaxial FIB-SEM column |
US6828575B2 (en) | 2002-09-26 | 2004-12-07 | Massachusetts Institute Of Technology | Photonic crystals: a medium exhibiting anomalous cherenkov radiation |
US8228959B2 (en) * | 2002-09-27 | 2012-07-24 | The Trustees Of Dartmouth College | Free electron laser, and associated components and methods |
US6841795B2 (en) | 2002-10-25 | 2005-01-11 | The University Of Connecticut | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
US6922118B2 (en) | 2002-11-01 | 2005-07-26 | Hrl Laboratories, Llc | Micro electrical mechanical system (MEMS) tuning using focused ion beams |
JP2004158970A (en) * | 2002-11-05 | 2004-06-03 | Ube Ind Ltd | Band filter employing thin film piezoelectric resonator |
US7449979B2 (en) | 2002-11-07 | 2008-11-11 | Sophia Wireless, Inc. | Coupled resonator filters formed by micromachining |
US6936981B2 (en) | 2002-11-08 | 2005-08-30 | Applied Materials, Inc. | Retarding electron beams in multiple electron beam pattern generation |
JP2004172965A (en) | 2002-11-20 | 2004-06-17 | Seiko Epson Corp | Inter-chip optical interconnection circuit, electro-optical device and electronic appliance |
CN101114694A (en) * | 2002-11-26 | 2008-01-30 | 株式会社东芝 | Magnetic cell and magnetic memory |
JP4249474B2 (en) | 2002-12-06 | 2009-04-02 | セイコーエプソン株式会社 | Wavelength multiplexing chip-to-chip optical interconnection circuit |
JP2004191392A (en) | 2002-12-06 | 2004-07-08 | Seiko Epson Corp | Wavelength multiple intra-chip optical interconnection circuit, electro-optical device and electronic appliance |
ITMI20022608A1 (en) | 2002-12-09 | 2004-06-10 | Fond Di Adroterapia Oncologic A Tera | LINAC WITH DRAWING TUBES FOR THE ACCELERATION OF A BAND OF IONS. |
US20040180244A1 (en) | 2003-01-24 | 2004-09-16 | Tour James Mitchell | Process and apparatus for microwave desorption of elements or species from carbon nanotubes |
US20040159900A1 (en) | 2003-01-27 | 2004-08-19 | 3M Innovative Properties Company | Phosphor based light sources having front illumination |
JP4044453B2 (en) | 2003-02-06 | 2008-02-06 | 株式会社東芝 | Quantum memory and information processing method using quantum memory |
US20040154925A1 (en) | 2003-02-11 | 2004-08-12 | Podlaha Elizabeth J. | Composite metal and composite metal alloy microstructures |
US20040171272A1 (en) | 2003-02-28 | 2004-09-02 | Applied Materials, Inc. | Method of etching metallic materials to form a tapered profile |
US20040184270A1 (en) | 2003-03-17 | 2004-09-23 | Halter Michael A. | LED light module with micro-reflector cavities |
US7138629B2 (en) * | 2003-04-22 | 2006-11-21 | Ebara Corporation | Testing apparatus using charged particles and device manufacturing method using the testing apparatus |
US6954515B2 (en) | 2003-04-25 | 2005-10-11 | Varian Medical Systems, Inc., | Radiation sources and radiation scanning systems with improved uniformity of radiation intensity |
TWI297045B (en) * | 2003-05-07 | 2008-05-21 | Microfabrica Inc | Methods and apparatus for forming multi-layer structures using adhered masks |
US6884335B2 (en) | 2003-05-20 | 2005-04-26 | Novellus Systems, Inc. | Electroplating using DC current interruption and variable rotation rate |
US6943650B2 (en) | 2003-05-29 | 2005-09-13 | Freescale Semiconductor, Inc. | Electromagnetic band gap microwave filter |
US7446601B2 (en) | 2003-06-23 | 2008-11-04 | Astronix Research, Llc | Electron beam RF amplifier and emitter |
US20050194258A1 (en) | 2003-06-27 | 2005-09-08 | Microfabrica Inc. | Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates |
US6953291B2 (en) | 2003-06-30 | 2005-10-11 | Finisar Corporation | Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection |
US7279686B2 (en) | 2003-07-08 | 2007-10-09 | Biomed Solutions, Llc | Integrated sub-nanometer-scale electron beam systems |
US7141800B2 (en) * | 2003-07-11 | 2006-11-28 | Charles E. Bryson, III | Non-dispersive charged particle energy analyzer |
IL157344A0 (en) | 2003-08-11 | 2004-06-20 | Opgal Ltd | Internal temperature reference source and mtf inverse filter for radiometry |
US7099586B2 (en) | 2003-09-04 | 2006-08-29 | The Regents Of The University Of California | Reconfigurable multi-channel all-optical regenerators |
US7292614B2 (en) * | 2003-09-23 | 2007-11-06 | Eastman Kodak Company | Organic laser and liquid crystal display |
US20050067286A1 (en) * | 2003-09-26 | 2005-03-31 | The University Of Cincinnati | Microfabricated structures and processes for manufacturing same |
US7362972B2 (en) | 2003-09-29 | 2008-04-22 | Jds Uniphase Inc. | Laser transmitter capable of transmitting line data and supervisory information at a plurality of data rates |
US7170142B2 (en) | 2003-10-03 | 2007-01-30 | Applied Materials, Inc. | Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith |
US7295638B2 (en) | 2003-11-17 | 2007-11-13 | Motorola, Inc. | Communication device |
US7042982B2 (en) | 2003-11-19 | 2006-05-09 | Lucent Technologies Inc. | Focusable and steerable micro-miniature x-ray apparatus |
JP4430622B2 (en) | 2003-12-05 | 2010-03-10 | スリーエム イノベイティブ プロパティズ カンパニー | Photonic crystal manufacturing method |
WO2005073629A1 (en) | 2004-01-28 | 2005-08-11 | Tir Systems Ltd. | Directly viewable luminaire |
EP1711737B1 (en) | 2004-01-28 | 2013-09-18 | Koninklijke Philips Electronics N.V. | Sealed housing unit for lighting system |
US7274835B2 (en) | 2004-02-18 | 2007-09-25 | Cornell Research Foundation, Inc. | Optical waveguide displacement sensor |
JP2005242219A (en) | 2004-02-27 | 2005-09-08 | Fujitsu Ltd | Array type wavelength converter |
US7092603B2 (en) | 2004-03-03 | 2006-08-15 | Fujitsu Limited | Optical bridge for chip-to-board interconnection and methods of fabrication |
JP4370945B2 (en) | 2004-03-11 | 2009-11-25 | ソニー株式会社 | Measuring method of dielectric constant |
US6996303B2 (en) | 2004-03-12 | 2006-02-07 | Fujitsu Limited | Flexible optical waveguides for backplane optical interconnections |
EP1580305A3 (en) * | 2004-03-23 | 2008-01-16 | FUJIFILM Corporation | Fine structural body surface and method of producing the same |
US7012419B2 (en) | 2004-03-26 | 2006-03-14 | Ut-Battelle, Llc | Fast Faraday cup with high bandwidth |
KR100853067B1 (en) | 2004-04-05 | 2008-08-19 | 닛본 덴끼 가부시끼가이샤 | Photodiode and method for manufacturing same |
JP4257741B2 (en) | 2004-04-19 | 2009-04-22 | 三菱電機株式会社 | Charged particle beam accelerator, particle beam irradiation medical system using charged particle beam accelerator, and method of operating particle beam irradiation medical system |
US7428322B2 (en) | 2004-04-20 | 2008-09-23 | Bio-Rad Laboratories, Inc. | Imaging method and apparatus |
US7454095B2 (en) | 2004-04-27 | 2008-11-18 | California Institute Of Technology | Integrated plasmon and dielectric waveguides |
KR100586965B1 (en) | 2004-05-27 | 2006-06-08 | 삼성전기주식회사 | Light emitting diode device |
US7294834B2 (en) * | 2004-06-16 | 2007-11-13 | National University Of Singapore | Scanning electron microscope |
US7155107B2 (en) * | 2004-06-18 | 2006-12-26 | Southwest Research Institute | System and method for detection of fiber optic cable using static and induced charge |
US7194798B2 (en) * | 2004-06-30 | 2007-03-27 | Hitachi Global Storage Technologies Netherlands B.V. | Method for use in making a write coil of magnetic head |
US20060062258A1 (en) * | 2004-07-02 | 2006-03-23 | Vanderbilt University | Smith-Purcell free electron laser and method of operating same |
US7130102B2 (en) | 2004-07-19 | 2006-10-31 | Mario Rabinowitz | Dynamic reflection, illumination, and projection |
CA2574122A1 (en) | 2004-07-21 | 2006-02-02 | Still River Systems, Inc. | A programmable radio frequency waveform generator for a synchrocyclotron |
GB0416600D0 (en) | 2004-07-24 | 2004-08-25 | Univ Newcastle | A process for manufacturing micro- and nano-devices |
US7375631B2 (en) | 2004-07-26 | 2008-05-20 | Lenovo (Singapore) Pte. Ltd. | Enabling and disabling a wireless RFID portable transponder |
US7791290B2 (en) * | 2005-09-30 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Ultra-small resonating charged particle beam modulator |
US7626179B2 (en) | 2005-09-30 | 2009-12-01 | Virgin Island Microsystems, Inc. | Electron beam induced resonance |
US7586097B2 (en) | 2006-01-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Switching micro-resonant structures using at least one director |
US20060035173A1 (en) | 2004-08-13 | 2006-02-16 | Mark Davidson | Patterning thin metal films by dry reactive ion etching |
KR100623477B1 (en) * | 2004-08-25 | 2006-09-19 | 한국정보통신대학교 산학협력단 | Optical printed circuit boards and optical interconnection blocks using optical fiber bundles |
WO2006042239A2 (en) | 2004-10-06 | 2006-04-20 | The Regents Of The University Of California | Cascaded cavity silicon raman laser with electrical modulation, switching, and active mode locking capability |
US20060187794A1 (en) | 2004-10-14 | 2006-08-24 | Tim Harvey | Uses of wave guided miniature holographic system |
TWI253714B (en) | 2004-12-21 | 2006-04-21 | Phoenix Prec Technology Corp | Method for fabricating a multi-layer circuit board with fine pitch |
US7592255B2 (en) | 2004-12-22 | 2009-09-22 | Hewlett-Packard Development Company, L.P. | Fabricating arrays of metallic nanostructures |
US7508576B2 (en) | 2005-01-20 | 2009-03-24 | Intel Corporation | Digital signal regeneration, reshaping and wavelength conversion using an optical bistable silicon raman laser |
US7466326B2 (en) | 2005-01-21 | 2008-12-16 | Konica Minolta Business Technologies, Inc. | Image forming method and image forming apparatus |
US7309953B2 (en) | 2005-01-24 | 2007-12-18 | Principia Lightworks, Inc. | Electron beam pumped laser light source for projection television |
US7120332B1 (en) | 2005-03-31 | 2006-10-10 | Eastman Kodak Company | Placement of lumiphores within a light emitting resonator in a visual display with electro-optical addressing architecture |
US7397055B2 (en) | 2005-05-02 | 2008-07-08 | Raytheon Company | Smith-Purcell radiation source using negative-index metamaterial (NIM) |
CN102255143B (en) * | 2005-06-30 | 2014-08-20 | L.皮尔·德罗什蒙 | Electronic element and method of manufacture |
EP2027594B1 (en) | 2005-07-08 | 2011-12-14 | NexGen Semi Holding, Inc. | Apparatus and method for controlled particle beam manufacturing of semiconductors |
US20070013765A1 (en) * | 2005-07-18 | 2007-01-18 | Eastman Kodak Company | Flexible organic laser printer |
US8425858B2 (en) * | 2005-10-14 | 2013-04-23 | Morpho Detection, Inc. | Detection apparatus and associated method |
US7473916B2 (en) * | 2005-12-16 | 2009-01-06 | Asml Netherlands B.V. | Apparatus and method for detecting contamination within a lithographic apparatus |
US7547904B2 (en) | 2005-12-22 | 2009-06-16 | Palo Alto Research Center Incorporated | Sensing photon energies emanating from channels or moving objects |
US7619373B2 (en) | 2006-01-05 | 2009-11-17 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
US7470920B2 (en) | 2006-01-05 | 2008-12-30 | Virgin Islands Microsystems, Inc. | Resonant structure-based display |
US7443358B2 (en) | 2006-02-28 | 2008-10-28 | Virgin Island Microsystems, Inc. | Integrated filter in antenna-based detector |
US7623165B2 (en) | 2006-02-28 | 2009-11-24 | Aptina Imaging Corporation | Vertical tri-color sensor |
US7862756B2 (en) | 2006-03-30 | 2011-01-04 | Asml Netherland B.V. | Imprint lithography |
US7646991B2 (en) | 2006-04-26 | 2010-01-12 | Virgin Island Microsystems, Inc. | Selectable frequency EMR emitter |
US20070264023A1 (en) | 2006-04-26 | 2007-11-15 | Virgin Islands Microsystems, Inc. | Free space interchip communications |
US7511808B2 (en) | 2006-04-27 | 2009-03-31 | Hewlett-Packard Development Company, L.P. | Analyte stages including tunable resonant cavities and Raman signal-enhancing structures |
US7586167B2 (en) | 2006-05-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Detecting plasmons using a metallurgical junction |
US7442940B2 (en) | 2006-05-05 | 2008-10-28 | Virgin Island Microsystems, Inc. | Focal plane array incorporating ultra-small resonant structures |
US7359589B2 (en) * | 2006-05-05 | 2008-04-15 | Virgin Islands Microsystems, Inc. | Coupling electromagnetic wave through microcircuit |
US7436177B2 (en) | 2006-05-05 | 2008-10-14 | Virgin Islands Microsystems, Inc. | SEM test apparatus |
US7342441B2 (en) * | 2006-05-05 | 2008-03-11 | Virgin Islands Microsystems, Inc. | Heterodyne receiver array using resonant structures |
US20070258720A1 (en) | 2006-05-05 | 2007-11-08 | Virgin Islands Microsystems, Inc. | Inter-chip optical communication |
US7569836B2 (en) * | 2006-05-05 | 2009-08-04 | Virgin Islands Microsystems, Inc. | Transmission of data between microchips using a particle beam |
US20070258492A1 (en) | 2006-05-05 | 2007-11-08 | Virgin Islands Microsystems, Inc. | Light-emitting resonant structure driving raman laser |
US7554083B2 (en) | 2006-05-05 | 2009-06-30 | Virgin Islands Microsystems, Inc. | Integration of electromagnetic detector on integrated chip |
US7573045B2 (en) * | 2006-05-15 | 2009-08-11 | Virgin Islands Microsystems, Inc. | Plasmon wave propagation devices and methods |
US7450794B2 (en) * | 2006-09-19 | 2008-11-11 | Virgin Islands Microsystems, Inc. | Microcircuit using electromagnetic wave routing |
-
2006
- 2006-05-05 US US11/418,078 patent/US7732786B2/en active Active - Reinstated
- 2006-06-09 WO PCT/US2006/022679 patent/WO2007130078A2/en active Application Filing
- 2006-06-19 TW TW095121911A patent/TW200743128A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5263043A (en) * | 1990-08-31 | 1993-11-16 | Trustees Of Dartmouth College | Free electron laser utilizing grating coupling |
US20040240035A1 (en) * | 2003-05-29 | 2004-12-02 | Stanislav Zhilkov | Method of modulation and electron modulator for optical communication and data transmission |
Also Published As
Publication number | Publication date |
---|---|
TW200743128A (en) | 2007-11-16 |
US20070257622A1 (en) | 2007-11-08 |
WO2007130078A3 (en) | 2009-04-16 |
US7732786B2 (en) | 2010-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7554083B2 (en) | Integration of electromagnetic detector on integrated chip | |
JP6329644B2 (en) | Right-angle time-of-flight detector with extended life | |
US7342441B2 (en) | Heterodyne receiver array using resonant structures | |
US7443358B2 (en) | Integrated filter in antenna-based detector | |
US20080083881A1 (en) | Plasmon wave propagation devices and methods | |
US7732786B2 (en) | Coupling energy in a plasmon wave to an electron beam | |
US20070170370A1 (en) | Structures and methods for coupling energy from an electromagnetic wave | |
US7659513B2 (en) | Low terahertz source and detector | |
US7791053B2 (en) | Depressed anode with plasmon-enabled devices such as ultra-small resonant structures | |
US7728702B2 (en) | Shielding of integrated circuit package with high-permeability magnetic material | |
US7579609B2 (en) | Coupling light of light emitting resonator to waveguide | |
US7557647B2 (en) | Heterodyne receiver using resonant structures | |
US7839145B2 (en) | Directed-energy imaging system | |
US7990336B2 (en) | Microwave coupled excitation of solid state resonant arrays | |
US7718977B2 (en) | Stray charged particle removal device | |
US7558490B2 (en) | Resonant detector for optical signals | |
Awasthi et al. | Study of electromagnetic fluctuations in high beta plasma of a large linear device | |
US20070200071A1 (en) | Coupling output from a micro resonator to a plasmon transmission line | |
US7679067B2 (en) | Receiver array using shared electron beam | |
US6838829B2 (en) | Depressed collector for electron beams | |
US20080067940A1 (en) | Surface plasmon signal transmission | |
WO2008008504A2 (en) | Apparatus and method for producing electromagnetic oscillations |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 06784750 Country of ref document: EP Kind code of ref document: A2 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: COMMUNICATION PURSUANT TO RULE 112(1) EPC (FORM 1205A OF 18.02.09) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06784750 Country of ref document: EP Kind code of ref document: A2 |