WO2007134316A3 - Off-die charge pump that supplies multiple flash devices - Google Patents
Off-die charge pump that supplies multiple flash devices Download PDFInfo
- Publication number
- WO2007134316A3 WO2007134316A3 PCT/US2007/068958 US2007068958W WO2007134316A3 WO 2007134316 A3 WO2007134316 A3 WO 2007134316A3 US 2007068958 W US2007068958 W US 2007068958W WO 2007134316 A3 WO2007134316 A3 WO 2007134316A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- charge pump
- flash memory
- multiple flash
- flash devices
- supplies multiple
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
Abstract
A system and method for storing data uses multiple flash memory dies. Each flash memory die (103) includes multiple flash memory cells (124). A charge pump (1010) is adapted to supply charge at a predetermined voltage to each flash memory die of the flash memory dies, and an interface (115) is adapted to receive instructions for controlling the charge pump (1010).
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80035706P | 2006-05-15 | 2006-05-15 | |
US60/800,357 | 2006-05-15 | ||
US11/694,799 US8000134B2 (en) | 2006-05-15 | 2007-03-30 | Off-die charge pump that supplies multiple flash devices |
US11/694,799 | 2007-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007134316A2 WO2007134316A2 (en) | 2007-11-22 |
WO2007134316A3 true WO2007134316A3 (en) | 2008-03-27 |
Family
ID=38684934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/068958 WO2007134316A2 (en) | 2006-05-15 | 2007-05-15 | Off-die charge pump that supplies multiple flash devices |
Country Status (2)
Country | Link |
---|---|
US (6) | US8000134B2 (en) |
WO (1) | WO2007134316A2 (en) |
Families Citing this family (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8000134B2 (en) * | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7911834B2 (en) * | 2006-05-15 | 2011-03-22 | Apple Inc. | Analog interface for a flash memory die |
US8738841B2 (en) | 2007-12-27 | 2014-05-27 | Sandisk Enterprise IP LLC. | Flash memory controller and system including data pipelines incorporating multiple buffers |
US8365039B2 (en) * | 2008-05-21 | 2013-01-29 | Intel Corporation | Adjustable read reference for non-volatile memory |
US20090292971A1 (en) * | 2008-05-21 | 2009-11-26 | Chun Fung Man | Data recovery techniques |
US8276028B2 (en) * | 2008-05-23 | 2012-09-25 | Intel Corporation | Using error information from nearby locations to recover uncorrectable data in non-volatile memory |
JP5185156B2 (en) * | 2009-02-24 | 2013-04-17 | 株式会社東芝 | Memory controller and semiconductor memory device |
US8407564B2 (en) * | 2009-07-15 | 2013-03-26 | Intel Corporation | Prediction and cancellation of systematic noise sources in non-volatile memory |
US20110286271A1 (en) * | 2010-05-21 | 2011-11-24 | Mediatek Inc. | Memory systems and methods for reading data stored in a memory cell of a memory device |
US9218852B2 (en) | 2011-06-30 | 2015-12-22 | Sandisk Technologies Inc. | Smart bridge for memory core |
US8713404B2 (en) * | 2011-07-01 | 2014-04-29 | Apple Inc. | Controller interface providing improved data reliability |
US8921991B2 (en) | 2011-09-01 | 2014-12-30 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory |
US9117493B2 (en) | 2011-09-01 | 2015-08-25 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory comprising off-die address/data translator |
US9093129B2 (en) | 2011-09-01 | 2015-07-28 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory comprising dice with different BEOL structures |
US8890300B2 (en) | 2011-09-01 | 2014-11-18 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory comprising off-die read/write-voltage generator |
US9024425B2 (en) | 2011-09-01 | 2015-05-05 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional memory comprising an integrated intermediate-circuit die |
US8839083B2 (en) * | 2011-10-25 | 2014-09-16 | Taejin Info Tech Co., Ltd. | Secure error detection and synchronous data tagging for high-speed data transfer |
US8793543B2 (en) | 2011-11-07 | 2014-07-29 | Sandisk Enterprise Ip Llc | Adaptive read comparison signal generation for memory systems |
US9208070B2 (en) | 2011-12-20 | 2015-12-08 | Sandisk Technologies Inc. | Wear leveling of multiple memory devices |
US8645770B2 (en) | 2012-01-18 | 2014-02-04 | Apple Inc. | Systems and methods for proactively refreshing nonvolatile memory |
TWI451106B (en) * | 2012-03-26 | 2014-09-01 | Silicon Motion Inc | Wafer testing system and testing method thereof |
US9699263B1 (en) | 2012-08-17 | 2017-07-04 | Sandisk Technologies Llc. | Automatic read and write acceleration of data accessed by virtual machines |
US9501398B2 (en) | 2012-12-26 | 2016-11-22 | Sandisk Technologies Llc | Persistent storage device with NVRAM for staging writes |
US9612948B2 (en) | 2012-12-27 | 2017-04-04 | Sandisk Technologies Llc | Reads and writes between a contiguous data block and noncontiguous sets of logical address blocks in a persistent storage device |
US9239751B1 (en) | 2012-12-27 | 2016-01-19 | Sandisk Enterprise Ip Llc | Compressing data from multiple reads for error control management in memory systems |
US9454420B1 (en) | 2012-12-31 | 2016-09-27 | Sandisk Technologies Llc | Method and system of reading threshold voltage equalization |
US9870830B1 (en) | 2013-03-14 | 2018-01-16 | Sandisk Technologies Llc | Optimal multilevel sensing for reading data from a storage medium |
US9136877B1 (en) | 2013-03-15 | 2015-09-15 | Sandisk Enterprise Ip Llc | Syndrome layered decoding for LDPC codes |
US9367246B2 (en) * | 2013-03-15 | 2016-06-14 | Sandisk Technologies Inc. | Performance optimization of data transfer for soft information generation |
US9244763B1 (en) | 2013-03-15 | 2016-01-26 | Sandisk Enterprise Ip Llc | System and method for updating a reading threshold voltage based on symbol transition information |
US9236886B1 (en) | 2013-03-15 | 2016-01-12 | Sandisk Enterprise Ip Llc | Universal and reconfigurable QC-LDPC encoder |
US9159437B2 (en) | 2013-06-11 | 2015-10-13 | Sandisk Enterprise IP LLC. | Device and method for resolving an LM flag issue |
US9384126B1 (en) | 2013-07-25 | 2016-07-05 | Sandisk Technologies Inc. | Methods and systems to avoid false negative results in bloom filters implemented in non-volatile data storage systems |
US9524235B1 (en) | 2013-07-25 | 2016-12-20 | Sandisk Technologies Llc | Local hash value generation in non-volatile data storage systems |
US9235509B1 (en) | 2013-08-26 | 2016-01-12 | Sandisk Enterprise Ip Llc | Write amplification reduction by delaying read access to data written during garbage collection |
US9639463B1 (en) | 2013-08-26 | 2017-05-02 | Sandisk Technologies Llc | Heuristic aware garbage collection scheme in storage systems |
JP6275427B2 (en) * | 2013-09-06 | 2018-02-07 | 株式会社東芝 | Memory control circuit and cache memory |
JP2015053096A (en) | 2013-09-09 | 2015-03-19 | マイクロン テクノロジー, インク. | Semiconductor device and error correction method |
US9298608B2 (en) | 2013-10-18 | 2016-03-29 | Sandisk Enterprise Ip Llc | Biasing for wear leveling in storage systems |
US9442662B2 (en) | 2013-10-18 | 2016-09-13 | Sandisk Technologies Llc | Device and method for managing die groups |
US9436831B2 (en) | 2013-10-30 | 2016-09-06 | Sandisk Technologies Llc | Secure erase in a memory device |
US9263156B2 (en) | 2013-11-07 | 2016-02-16 | Sandisk Enterprise Ip Llc | System and method for adjusting trip points within a storage device |
US9244785B2 (en) | 2013-11-13 | 2016-01-26 | Sandisk Enterprise Ip Llc | Simulated power failure and data hardening |
US9703816B2 (en) | 2013-11-19 | 2017-07-11 | Sandisk Technologies Llc | Method and system for forward reference logging in a persistent datastore |
US9520197B2 (en) | 2013-11-22 | 2016-12-13 | Sandisk Technologies Llc | Adaptive erase of a storage device |
US9520162B2 (en) | 2013-11-27 | 2016-12-13 | Sandisk Technologies Llc | DIMM device controller supervisor |
US9582058B2 (en) | 2013-11-29 | 2017-02-28 | Sandisk Technologies Llc | Power inrush management of storage devices |
US9235245B2 (en) | 2013-12-04 | 2016-01-12 | Sandisk Enterprise Ip Llc | Startup performance and power isolation |
US9703636B2 (en) | 2014-03-01 | 2017-07-11 | Sandisk Technologies Llc | Firmware reversion trigger and control |
US9390814B2 (en) | 2014-03-19 | 2016-07-12 | Sandisk Technologies Llc | Fault detection and prediction for data storage elements |
US9454448B2 (en) | 2014-03-19 | 2016-09-27 | Sandisk Technologies Llc | Fault testing in storage devices |
US9448876B2 (en) | 2014-03-19 | 2016-09-20 | Sandisk Technologies Llc | Fault detection and prediction in storage devices |
US9390021B2 (en) | 2014-03-31 | 2016-07-12 | Sandisk Technologies Llc | Efficient cache utilization in a tiered data structure |
US9626400B2 (en) | 2014-03-31 | 2017-04-18 | Sandisk Technologies Llc | Compaction of information in tiered data structure |
US9626399B2 (en) | 2014-03-31 | 2017-04-18 | Sandisk Technologies Llc | Conditional updates for reducing frequency of data modification operations |
US9697267B2 (en) | 2014-04-03 | 2017-07-04 | Sandisk Technologies Llc | Methods and systems for performing efficient snapshots in tiered data structures |
US10211258B2 (en) | 2014-04-14 | 2019-02-19 | HangZhou HaiCun Information Technology Co., Ltd. | Manufacturing methods of JFET-type compact three-dimensional memory |
US10079239B2 (en) | 2014-04-14 | 2018-09-18 | HangZhou HaiCun Information Technology Co., Ltd. | Compact three-dimensional mask-programmed read-only memory |
US10199432B2 (en) | 2014-04-14 | 2019-02-05 | HangZhou HaiCun Information Technology Co., Ltd. | Manufacturing methods of MOSFET-type compact three-dimensional memory |
US10304495B2 (en) | 2014-04-14 | 2019-05-28 | Chengdu Haicun Ip Technology Llc | Compact three-dimensional memory with semi-conductive address line portion |
CN104978990B (en) | 2014-04-14 | 2017-11-10 | 成都海存艾匹科技有限公司 | Compact three-dimensional storage |
US10304553B2 (en) | 2014-04-14 | 2019-05-28 | HangZhou HaiCun Information Technology Co., Ltd. | Compact three-dimensional memory with an above-substrate decoding stage |
US10381102B2 (en) | 2014-04-30 | 2019-08-13 | Micron Technology, Inc. | Memory devices having a read function of data stored in a plurality of reference cells |
US9703491B2 (en) | 2014-05-30 | 2017-07-11 | Sandisk Technologies Llc | Using history of unaligned writes to cache data and avoid read-modify-writes in a non-volatile storage device |
US10372613B2 (en) | 2014-05-30 | 2019-08-06 | Sandisk Technologies Llc | Using sub-region I/O history to cache repeatedly accessed sub-regions in a non-volatile storage device |
US10114557B2 (en) | 2014-05-30 | 2018-10-30 | Sandisk Technologies Llc | Identification of hot regions to enhance performance and endurance of a non-volatile storage device |
US10656840B2 (en) | 2014-05-30 | 2020-05-19 | Sandisk Technologies Llc | Real-time I/O pattern recognition to enhance performance and endurance of a storage device |
US10656842B2 (en) | 2014-05-30 | 2020-05-19 | Sandisk Technologies Llc | Using history of I/O sizes and I/O sequences to trigger coalesced writes in a non-volatile storage device |
US10162748B2 (en) | 2014-05-30 | 2018-12-25 | Sandisk Technologies Llc | Prioritizing garbage collection and block allocation based on I/O history for logical address regions |
US10146448B2 (en) | 2014-05-30 | 2018-12-04 | Sandisk Technologies Llc | Using history of I/O sequences to trigger cached read ahead in a non-volatile storage device |
US9652381B2 (en) | 2014-06-19 | 2017-05-16 | Sandisk Technologies Llc | Sub-block garbage collection |
US9443601B2 (en) | 2014-09-08 | 2016-09-13 | Sandisk Technologies Llc | Holdup capacitor energy harvesting |
US20170270044A1 (en) * | 2014-10-03 | 2017-09-21 | Agency For Science, Technology And Research | Active Storage Unit and Array |
US9224491B1 (en) * | 2014-12-30 | 2015-12-29 | Sandisk Technologies Inc. | Average voltage band detection and use for tuning of voltages in ASICS |
US10387259B2 (en) * | 2015-06-26 | 2019-08-20 | Intel Corporation | Instant restart in non volatile system memory computing systems with embedded programmable data checking |
KR20170062635A (en) | 2015-11-27 | 2017-06-08 | 삼성전자주식회사 | Semiconductor memory device for diminishing peak current in multi memory dies structure |
US10490251B2 (en) | 2017-01-30 | 2019-11-26 | Micron Technology, Inc. | Apparatuses and methods for distributing row hammer refresh events across a memory device |
US11017833B2 (en) | 2018-05-24 | 2021-05-25 | Micron Technology, Inc. | Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling |
US10573370B2 (en) | 2018-07-02 | 2020-02-25 | Micron Technology, Inc. | Apparatus and methods for triggering row hammer address sampling |
US10685696B2 (en) | 2018-10-31 | 2020-06-16 | Micron Technology, Inc. | Apparatuses and methods for access based refresh timing |
CN113168861A (en) | 2018-12-03 | 2021-07-23 | 美光科技公司 | Semiconductor device for performing row hammer refresh operation |
CN117198356A (en) * | 2018-12-21 | 2023-12-08 | 美光科技公司 | Apparatus and method for timing interleaving for targeted refresh operations |
US11615831B2 (en) | 2019-02-26 | 2023-03-28 | Micron Technology, Inc. | Apparatuses and methods for memory mat refresh sequencing |
US10789015B2 (en) | 2019-03-01 | 2020-09-29 | Micron Technology, Inc. | Background operations in memory |
US11227649B2 (en) | 2019-04-04 | 2022-01-18 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of targeted refresh operations |
US11069393B2 (en) | 2019-06-04 | 2021-07-20 | Micron Technology, Inc. | Apparatuses and methods for controlling steal rates |
US10978132B2 (en) | 2019-06-05 | 2021-04-13 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of skipped refresh operations |
US11302374B2 (en) | 2019-08-23 | 2022-04-12 | Micron Technology, Inc. | Apparatuses and methods for dynamic refresh allocation |
US11302377B2 (en) | 2019-10-16 | 2022-04-12 | Micron Technology, Inc. | Apparatuses and methods for dynamic targeted refresh steals |
US11095299B1 (en) * | 2020-03-30 | 2021-08-17 | Sitrus Technology Corporation | ADC having adjustable threshold levels for PAM signal processing |
CN111261213B (en) * | 2020-04-30 | 2020-09-01 | 深圳市芯天下技术有限公司 | Erasing method of NOR Flash |
US11782685B2 (en) | 2020-06-17 | 2023-10-10 | Bank Of America Corporation | Software code vectorization converter |
US11347500B2 (en) | 2020-06-17 | 2022-05-31 | Bank Of America Corporation | Software code converter for resolving conflicts during code development |
US11573775B2 (en) | 2020-06-17 | 2023-02-07 | Bank Of America Corporation | Software code converter for resolving redundancy during code development |
US11309010B2 (en) | 2020-08-14 | 2022-04-19 | Micron Technology, Inc. | Apparatuses, systems, and methods for memory directed access pause |
US11380382B2 (en) | 2020-08-19 | 2022-07-05 | Micron Technology, Inc. | Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit |
US11348631B2 (en) | 2020-08-19 | 2022-05-31 | Micron Technology, Inc. | Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed |
US11557331B2 (en) | 2020-09-23 | 2023-01-17 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh operations |
US11222686B1 (en) | 2020-11-12 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh timing |
US11264079B1 (en) | 2020-12-18 | 2022-03-01 | Micron Technology, Inc. | Apparatuses and methods for row hammer based cache lockdown |
US11776637B2 (en) | 2022-02-03 | 2023-10-03 | Western Digital Technologies, Inc. | Voltage sharing across memory dies in response to a charge pump failure |
US20240054046A1 (en) * | 2022-08-09 | 2024-02-15 | Micron Technology, Inc. | Error-handling management during copyback operations in memory devices |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993022770A1 (en) * | 1992-05-01 | 1993-11-11 | Motorola, Inc. | Method and apparatus for storage of digital information |
US5745414A (en) * | 1994-09-14 | 1998-04-28 | Information Storage Devices, Inc. | Integrated circuit system having reference cells for improving the reading of storage cells |
WO2002067269A2 (en) * | 2001-02-16 | 2002-08-29 | Sandisk Corporation | Method and system for distributed power generation in multi-chip memory systems |
US20020140463A1 (en) * | 2001-03-15 | 2002-10-03 | Paul Cheung | Programmable soft-start control for charge pump |
US20050146919A1 (en) * | 2003-12-29 | 2005-07-07 | Ellis Robert M. | Memory system segmented power supply and control |
Family Cites Families (109)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US613414A (en) * | 1898-11-01 | And samuel a | ||
JPS5570986U (en) | 1978-11-06 | 1980-05-16 | ||
JPS5570986A (en) | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Semiconductor intergrated circuit device |
US4831403A (en) | 1985-12-27 | 1989-05-16 | Minolta Camera Kabushiki Kaisha | Automatic focus detection system |
DE69033262T2 (en) | 1989-04-13 | 2000-02-24 | Sandisk Corp | EEPROM card with replacement of faulty memory cells and buffer |
US5109496A (en) | 1989-09-27 | 1992-04-28 | International Business Machines Corporation | Most recently used address translation system with least recently used (LRU) replacement |
US5218569A (en) | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
US5663901A (en) | 1991-04-11 | 1997-09-02 | Sandisk Corporation | Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems |
US6230233B1 (en) | 1991-09-13 | 2001-05-08 | Sandisk Corporation | Wear leveling techniques for flash EEPROM systems |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5412601A (en) | 1992-08-31 | 1995-05-02 | Nippon Steel Corporation | Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell |
US5812814A (en) | 1993-02-26 | 1998-09-22 | Kabushiki Kaisha Toshiba | Alternative flash EEPROM semiconductor memory system |
US5424978A (en) | 1993-03-15 | 1995-06-13 | Nippon Steel Corporation | Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same |
US5394450A (en) | 1993-04-13 | 1995-02-28 | Waferscale Integration, Inc. | Circuit for performing arithmetic operations |
US7137011B1 (en) | 1993-09-01 | 2006-11-14 | Sandisk Corporation | Removable mother/daughter peripheral card |
JP3205658B2 (en) | 1993-12-28 | 2001-09-04 | 新日本製鐵株式会社 | Reading method of semiconductor memory device |
US5563838A (en) | 1994-02-01 | 1996-10-08 | Micron Electronics, Inc. | Module having voltage control circuit to reduce surges in potential |
US5440524A (en) | 1994-02-01 | 1995-08-08 | Integrated Device Technology, Inc. | Method and apparatus for simuilataneous long writes of multiple cells of a row in a static ram |
US5838603A (en) | 1994-10-11 | 1998-11-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip |
US5541886A (en) | 1994-12-27 | 1996-07-30 | Intel Corporation | Method and apparatus for storing control information in multi-bit non-volatile memory arrays |
US5867721A (en) | 1995-02-07 | 1999-02-02 | Intel Corporation | Selecting an integrated circuit from different integrated circuit array configurations |
US5745409A (en) | 1995-09-28 | 1998-04-28 | Invox Technology | Non-volatile memory with analog and digital interface and storage |
KR0157122B1 (en) | 1995-12-23 | 1999-02-18 | 김광호 | A/d converter |
JPH09205615A (en) | 1996-01-25 | 1997-08-05 | Canon Inc | Recorder |
US5726934A (en) | 1996-04-09 | 1998-03-10 | Information Storage Devices, Inc. | Method and apparatus for analog reading values stored in floating gate structures |
US5712815A (en) | 1996-04-22 | 1998-01-27 | Advanced Micro Devices, Inc. | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
US5946257A (en) | 1996-07-24 | 1999-08-31 | Micron Technology, Inc. | Selective power distribution circuit for an integrated circuit |
JP3709246B2 (en) | 1996-08-27 | 2005-10-26 | 株式会社日立製作所 | Semiconductor integrated circuit |
US5754566A (en) | 1996-09-06 | 1998-05-19 | Intel Corporation | Method and apparatus for correcting a multilevel cell memory by using interleaving |
US6023781A (en) | 1996-09-18 | 2000-02-08 | Nippon Steel Corporation | Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program |
JPH10124381A (en) | 1996-10-21 | 1998-05-15 | Mitsubishi Electric Corp | Semiconductor storage device |
US6097638A (en) | 1997-02-12 | 2000-08-01 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US5828592A (en) | 1997-03-12 | 1998-10-27 | Information Storage Devices, Inc. | Analog signal recording and playback integrated circuit and message management system |
JP3189740B2 (en) | 1997-06-20 | 2001-07-16 | 日本電気株式会社 | Data repair method for nonvolatile semiconductor memory |
US5909449A (en) | 1997-09-08 | 1999-06-01 | Invox Technology | Multibit-per-cell non-volatile memory with error detection and correction |
JP4074697B2 (en) | 1997-11-28 | 2008-04-09 | 株式会社ルネサステクノロジ | Semiconductor device |
JPH11176178A (en) | 1997-12-15 | 1999-07-02 | Sony Corp | Non-volatile semiconductor storage and ic memory card using it |
US6072676A (en) * | 1998-04-13 | 2000-06-06 | Analog Devices, Inc. | Protection circuit for an excitation current source |
US6208542B1 (en) | 1998-06-30 | 2001-03-27 | Sandisk Corporation | Techniques for storing digital data in an analog or multilevel memory |
EP1005213A3 (en) | 1998-11-02 | 2000-07-05 | Information Storage Devices, Inc. | Multiple message multilevel analog signal recording and playback system containing configurable analog processing functions |
US6058060A (en) | 1998-12-31 | 2000-05-02 | Invox Technology | Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to noise ratio |
US6134141A (en) | 1998-12-31 | 2000-10-17 | Sandisk Corporation | Dynamic write process for high bandwidth multi-bit-per-cell and analog/multi-level non-volatile memories |
US7139196B2 (en) | 1999-01-14 | 2006-11-21 | Silicon Storage Technology, Inc. | Sub-volt sensing for digital multilevel flash memory |
TW417381B (en) | 1999-04-01 | 2001-01-01 | Mustek Systems Inc | Conversion method for increasing the bits of scanning signals of scanner |
JP2000298992A (en) | 1999-04-13 | 2000-10-24 | Hitachi Ltd | Control device for multi-level storage non-volatile semiconductor memory |
JP2001006374A (en) | 1999-06-17 | 2001-01-12 | Hitachi Ltd | Semiconductor memory and system |
JP2001052476A (en) | 1999-08-05 | 2001-02-23 | Mitsubishi Electric Corp | Semiconductor device |
JP2001067884A (en) | 1999-08-31 | 2001-03-16 | Hitachi Ltd | Nonvolatile semiconductor memory device |
US6166960A (en) * | 1999-09-24 | 2000-12-26 | Microchip Technology, Incorporated | Method, system and apparatus for determining that a programming voltage level is sufficient for reliably programming an eeprom |
JP2001110184A (en) | 1999-10-14 | 2001-04-20 | Hitachi Ltd | Semiconductor device |
US6259627B1 (en) | 2000-01-27 | 2001-07-10 | Multi Level Memory Technology | Read and write operations using constant row line voltage and variable column line load |
US6426893B1 (en) | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
US6297988B1 (en) | 2000-02-25 | 2001-10-02 | Advanced Micro Devices, Inc. | Mode indicator for multi-level memory |
US6424569B1 (en) | 2000-02-25 | 2002-07-23 | Advanced Micro Devices, Inc. | User selectable cell programming |
JP2002074999A (en) | 2000-08-23 | 2002-03-15 | Sharp Corp | Non-volatile semiconductor memory |
US6538922B1 (en) | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
US6763424B2 (en) | 2001-01-19 | 2004-07-13 | Sandisk Corporation | Partial block data programming and reading operations in a non-volatile memory |
US6552929B1 (en) | 2001-02-08 | 2003-04-22 | Advanced Micro Devices, Inc. | Piggyback programming using an extended first pulse for multi-level cell flash memory designs |
JP3829088B2 (en) | 2001-03-29 | 2006-10-04 | 株式会社東芝 | Semiconductor memory device |
JP3828376B2 (en) | 2001-05-07 | 2006-10-04 | 株式会社東芝 | Storage system |
US7554842B2 (en) | 2001-09-17 | 2009-06-30 | Sandisk Corporation | Multi-purpose non-volatile memory card |
US6643169B2 (en) * | 2001-09-18 | 2003-11-04 | Intel Corporation | Variable level memory |
GB0123422D0 (en) | 2001-09-28 | 2001-11-21 | Memquest Ltd | Improved memory controller |
US6678192B2 (en) | 2001-11-02 | 2004-01-13 | Sandisk Corporation | Error management for writable tracking storage units |
US6850441B2 (en) | 2002-01-18 | 2005-02-01 | Sandisk Corporation | Noise reduction technique for transistors and small devices utilizing an episodic agitation |
US6871257B2 (en) | 2002-02-22 | 2005-03-22 | Sandisk Corporation | Pipelined parallel programming operation in a non-volatile memory system |
US6721820B2 (en) | 2002-05-15 | 2004-04-13 | M-Systems Flash Disk Pioneers Ltd. | Method for improving performance of a flash-based storage system using specialized flash controllers |
US6751766B2 (en) | 2002-05-20 | 2004-06-15 | Sandisk Corporation | Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data |
JP4086583B2 (en) | 2002-08-08 | 2008-05-14 | シャープ株式会社 | Nonvolatile semiconductor memory device and data write control method |
JP2004086991A (en) | 2002-08-27 | 2004-03-18 | Renesas Technology Corp | Nonvolatile storage device |
US6963505B2 (en) | 2002-10-29 | 2005-11-08 | Aifun Semiconductors Ltd. | Method circuit and system for determining a reference voltage |
JP4129170B2 (en) | 2002-12-05 | 2008-08-06 | シャープ株式会社 | Semiconductor memory device and memory data correction method for memory cell |
US6735114B1 (en) | 2003-02-04 | 2004-05-11 | Advanced Micro Devices, Inc. | Method of improving dynamic reference tracking for flash memory unit |
JP4550439B2 (en) | 2003-02-28 | 2010-09-22 | 東芝メモリシステムズ株式会社 | ECC controller |
JP4554598B2 (en) | 2003-03-27 | 2010-09-29 | サンディスク アイエル リミテッド | A data storage device that is fully accessible by all users |
JP2004310650A (en) | 2003-04-10 | 2004-11-04 | Renesas Technology Corp | Memory device |
US7240219B2 (en) | 2003-05-25 | 2007-07-03 | Sandisk Il Ltd. | Method and system for maintaining backup of portable storage devices |
US7237074B2 (en) | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
US7752380B2 (en) | 2003-07-31 | 2010-07-06 | Sandisk Il Ltd | SDRAM memory device with an embedded NAND flash controller |
US7212067B2 (en) | 2003-08-01 | 2007-05-01 | Sandisk Corporation | Voltage regulator with bypass for multi-voltage storage system |
US7019998B2 (en) | 2003-09-09 | 2006-03-28 | Silicon Storage Technology, Inc. | Unified multilevel cell memory |
US6937513B1 (en) | 2003-10-16 | 2005-08-30 | Lsi Logic Corporation | Integrated NAND and nor-type flash memory device and method of using the same |
JP2005141811A (en) | 2003-11-05 | 2005-06-02 | Renesas Technology Corp | Nonvolatile memory |
US7389465B2 (en) | 2004-01-30 | 2008-06-17 | Micron Technology, Inc. | Error detection and correction scheme for a memory device |
US7164561B2 (en) | 2004-02-13 | 2007-01-16 | Sandisk Corporation | Voltage regulator using protected low voltage devices |
US8019928B2 (en) | 2004-02-15 | 2011-09-13 | Sandisk Il Ltd. | Method of managing a multi-bit-cell flash memory |
US7233532B2 (en) | 2004-04-30 | 2007-06-19 | Xilinx, Inc. | Reconfiguration port for dynamic reconfiguration-system monitor interface |
US7218137B2 (en) | 2004-04-30 | 2007-05-15 | Xilinx, Inc. | Reconfiguration port for dynamic reconfiguration |
US7109750B2 (en) | 2004-04-30 | 2006-09-19 | Xilinx, Inc. | Reconfiguration port for dynamic reconfiguration-controller |
US7222224B2 (en) | 2004-05-21 | 2007-05-22 | Rambus Inc. | System and method for improving performance in computer memory systems supporting multiple memory access latencies |
US7535759B2 (en) | 2004-06-04 | 2009-05-19 | Micron Technology, Inc. | Memory system with user configurable density/performance option |
WO2005122177A1 (en) | 2004-06-09 | 2005-12-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit |
JP2006031795A (en) | 2004-07-14 | 2006-02-02 | Renesas Technology Corp | Nonvolatile semiconductor memory |
US7335026B2 (en) | 2004-10-12 | 2008-02-26 | Telerobotics Corp. | Video surveillance system and method |
US7493457B2 (en) | 2004-11-08 | 2009-02-17 | Sandisk Il. Ltd | States encoding in multi-bit flash cells for optimizing error rate |
US7218570B2 (en) | 2004-12-17 | 2007-05-15 | Sandisk 3D Llc | Apparatus and method for memory operations using address-dependent conditions |
US7391193B2 (en) | 2005-01-25 | 2008-06-24 | Sandisk Corporation | Voltage regulator with bypass mode |
KR100704628B1 (en) | 2005-03-25 | 2007-04-09 | 삼성전자주식회사 | Method and apparatus for storing status information using plural strings |
JP4772363B2 (en) | 2005-04-12 | 2011-09-14 | 株式会社東芝 | Nonvolatile semiconductor memory device |
WO2006129339A1 (en) | 2005-05-30 | 2006-12-07 | Spansion Llc | Storage apparatus and method for controlling storage apparatus |
US20060294295A1 (en) | 2005-06-24 | 2006-12-28 | Yukio Fukuzo | DRAM chip device well-communicated with flash memory chip and multi-chip package comprising such a device |
US7317630B2 (en) * | 2005-07-15 | 2008-01-08 | Atmel Corporation | Nonvolatile semiconductor memory apparatus |
US8379721B2 (en) | 2005-09-22 | 2013-02-19 | Qualcomm Incorported | Two pass rate control techniques for video coding using a min-max approach |
US7631245B2 (en) | 2005-09-26 | 2009-12-08 | Sandisk Il Ltd. | NAND flash memory controller exporting a NAND interface |
US7954037B2 (en) | 2005-10-25 | 2011-05-31 | Sandisk Il Ltd | Method for recovering from errors in flash memory |
KR101224919B1 (en) | 2006-02-07 | 2013-01-22 | 삼성전자주식회사 | Semiconductor memory device controlling output voltage level of high voltage generator according to temperature varation |
US7483327B2 (en) | 2006-03-02 | 2009-01-27 | Freescale Semiconductor, Inc. | Apparatus and method for adjusting an operating parameter of an integrated circuit |
US7852690B2 (en) | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
-
2007
- 2007-03-30 US US11/694,799 patent/US8000134B2/en not_active Expired - Fee Related
- 2007-05-15 WO PCT/US2007/068958 patent/WO2007134316A2/en active Application Filing
-
2011
- 2011-07-05 US US13/176,237 patent/US8462550B2/en active Active
-
2013
- 2013-06-10 US US13/913,722 patent/US8830747B2/en active Active
-
2014
- 2014-06-26 US US14/315,529 patent/US9042170B2/en active Active
- 2014-07-02 US US14/322,496 patent/US8964469B2/en active Active
-
2015
- 2015-05-19 US US14/716,574 patent/US9245616B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993022770A1 (en) * | 1992-05-01 | 1993-11-11 | Motorola, Inc. | Method and apparatus for storage of digital information |
US5745414A (en) * | 1994-09-14 | 1998-04-28 | Information Storage Devices, Inc. | Integrated circuit system having reference cells for improving the reading of storage cells |
WO2002067269A2 (en) * | 2001-02-16 | 2002-08-29 | Sandisk Corporation | Method and system for distributed power generation in multi-chip memory systems |
US20020140463A1 (en) * | 2001-03-15 | 2002-10-03 | Paul Cheung | Programmable soft-start control for charge pump |
US20050146919A1 (en) * | 2003-12-29 | 2005-07-07 | Ellis Robert M. | Memory system segmented power supply and control |
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US20130272065A1 (en) | 2013-10-17 |
US20070263442A1 (en) | 2007-11-15 |
US9042170B2 (en) | 2015-05-26 |
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US20110261618A1 (en) | 2011-10-27 |
US9245616B2 (en) | 2016-01-26 |
US20140307506A1 (en) | 2014-10-16 |
WO2007134316A2 (en) | 2007-11-22 |
US8462550B2 (en) | 2013-06-11 |
US8830747B2 (en) | 2014-09-09 |
US8000134B2 (en) | 2011-08-16 |
US20150380083A1 (en) | 2015-12-31 |
US20140313826A1 (en) | 2014-10-23 |
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