WO2007139648A3 - Method for improving the precision of a temperature-sensor circuit - Google Patents
Method for improving the precision of a temperature-sensor circuit Download PDFInfo
- Publication number
- WO2007139648A3 WO2007139648A3 PCT/US2007/010307 US2007010307W WO2007139648A3 WO 2007139648 A3 WO2007139648 A3 WO 2007139648A3 US 2007010307 W US2007010307 W US 2007010307W WO 2007139648 A3 WO2007139648 A3 WO 2007139648A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- precision
- improving
- sensor circuit
- temperature
- preferred
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Abstract
The preferred embodiment described below provide a method and a memory device for improving the precision of a temperature sensor circuit (160). In one preferred embodiment, first (Vtemp1) and second (Vtemp2) temperature dependent reference voltages are generated and compared, and an operating condition of the memory array is controlled based on the result (TempTrip1, TempTrip2) of the comparison.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/441,389 US7283414B1 (en) | 2006-05-24 | 2006-05-24 | Method for improving the precision of a temperature-sensor circuit |
US11/441,389 | 2006-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007139648A2 WO2007139648A2 (en) | 2007-12-06 |
WO2007139648A3 true WO2007139648A3 (en) | 2008-07-24 |
Family
ID=38535823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/010307 WO2007139648A2 (en) | 2006-05-24 | 2007-04-27 | Method for improving the precision of a temperature-sensor circuit |
Country Status (3)
Country | Link |
---|---|
US (2) | US7283414B1 (en) |
TW (1) | TW200814080A (en) |
WO (1) | WO2007139648A2 (en) |
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KR100908814B1 (en) * | 2007-08-29 | 2009-07-21 | 주식회사 하이닉스반도체 | Core voltage discharge circuit and semiconductor memory device including same |
US8397011B2 (en) * | 2007-10-05 | 2013-03-12 | Joseph Ashwood | Scalable mass data storage device |
JP5259270B2 (en) * | 2008-06-27 | 2013-08-07 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
US7755946B2 (en) * | 2008-09-19 | 2010-07-13 | Sandisk Corporation | Data state-based temperature compensation during sensing in non-volatile memory |
US7889575B2 (en) * | 2008-09-22 | 2011-02-15 | Sandisk Corporation | On-chip bias voltage temperature coefficient self-calibration mechanism |
US8197683B2 (en) * | 2008-10-16 | 2012-06-12 | William Steven Lopes | System for conditioning fluids utilizing a magnetic fluid processor |
US8004917B2 (en) | 2008-09-22 | 2011-08-23 | Sandisk Technologies Inc. | Bandgap voltage and temperature coefficient trimming algorithm |
US7755965B2 (en) * | 2008-10-13 | 2010-07-13 | Seagate Technology Llc | Temperature dependent system for reading ST-RAM |
US8190873B2 (en) * | 2009-05-13 | 2012-05-29 | Dell Products L.P. | System and method for optimizing performance of an information handling system component |
KR20110046808A (en) * | 2009-10-29 | 2011-05-06 | 삼성전자주식회사 | Data Read Circuit including Phase Change Memory and apparatuses having same |
US8694719B2 (en) | 2011-06-24 | 2014-04-08 | Sandisk Technologies Inc. | Controller, storage device, and method for power throttling memory operations |
US8941369B2 (en) | 2012-03-19 | 2015-01-27 | Sandisk Technologies Inc. | Curvature compensated band-gap design trimmable at a single temperature |
US8542000B1 (en) | 2012-03-19 | 2013-09-24 | Sandisk Technologies Inc. | Curvature compensated band-gap design |
US9541456B2 (en) | 2014-02-07 | 2017-01-10 | Sandisk Technologies Llc | Reference voltage generator for temperature sensor with trimming capability at two temperatures |
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JP2017139399A (en) * | 2016-02-05 | 2017-08-10 | Tdk株式会社 | Magnetic memory |
JP2018129105A (en) | 2017-02-07 | 2018-08-16 | 三星電子株式会社Samsung Electronics Co.,Ltd. | Magnetoresistive memory device |
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-
2006
- 2006-05-24 US US11/441,389 patent/US7283414B1/en not_active Expired - Fee Related
-
2007
- 2007-01-04 US US11/649,569 patent/US7277343B1/en not_active Expired - Fee Related
- 2007-04-27 WO PCT/US2007/010307 patent/WO2007139648A2/en active Application Filing
- 2007-05-11 TW TW096116905A patent/TW200814080A/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6531511B1 (en) * | 1999-01-26 | 2003-03-11 | Vernalis Research Limited | 2-adamantanemethanamine compounds for treating abnormalities in glutamatergic transmission |
Also Published As
Publication number | Publication date |
---|---|
WO2007139648A2 (en) | 2007-12-06 |
US7283414B1 (en) | 2007-10-16 |
TW200814080A (en) | 2008-03-16 |
US7277343B1 (en) | 2007-10-02 |
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